MMBTA05 / MMBTA06
Document number: DS30037 Rev. 12 - 2 1 of 4
www.diodes.com April 2009
© Diodes Incorporated
MMBTA05 / MMBTA06
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
• Epitaxial Planar Die Construction
• Complementary PNP Type Available (MMBTA55 / MMBTA56)
• Ideal for Low Power Amplification and Switching
• Lead, Halogen and Antimony Free, RoHS Compliant (Note 3)
• "Green" Device (Note 4)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: SOT-23
• Case Material: Molded Plastic, “Green” Molding Compound,
Note 4. UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminal Connections: See Diagram
• Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
(Lead Free Plating) Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.008 grams (approximate)
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic Symbol MMBTA05 MMBTA06 Unit
Collector-Base Voltage VCBO 60 80 V
Collector-Emitter Voltage VCEO 60 80 V
Emitter-Base Voltage VEBO 4.0 V
Collector Current - Continuous (Note 1) IC 500 mA
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 1) PD 300 mW
Thermal Resistance, Junction to Ambient (Note 1) R
JA 417 °C/W
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 2)
Collector-Base Breakdown Voltage MMBTA05
MMBTA06
V(BR)CBO 60
80 ⎯ V IC = 100μA, IE = 0
Collector-Emitter Breakdown Voltage MMBTA05
MMBTA06
V(BR)CEO 60
80 ⎯ V IC = 1.0mA, IB = 0
Emitter-Base Breakdown Voltage V
BR
EBO 4.0 ⎯ V IE = 100μA, IC = 0
Collector Cutoff Current MMBTA05
MMBTA06
ICBO ⎯ 100 nA VCB = 60V, IE = 0
VCB = 80V, IE = 0
Collector Cutoff Current MMBTA05
MMBTA06
ICES ⎯ 100 nA VCE = 60V, IBO = 0V
VCE = 80V, IBO = 0V
ON CHARACTERISTICS (Note 2)
DC Current Gain hFE 100 ⎯ ⎯ IC = 10mA, VCE = 1.0V
IC = 100mA, VCE = 1.0V
Collector-Emitter Saturation Voltage VCE
SAT
⎯ 0.25 V IC = 100mA, IB = 10mA
Base-Emitter Saturation Voltage VBE
SAT
⎯ 1.2 V IC = 100mA, VCE = 1.0V
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product fT 100 ⎯ MHz VCE = 2.0V, IC = 10mA, f = 100MHz
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can
be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration pulse test used to minimize self-heating effect.
3. No purposefully added lead. Halogen and Antimony Free.
4. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date Code
V9 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
Top View Device Schematic
E
B
C
3
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