MSCXXXX.PDF 01-19-99
MS1253
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
RF & MICROWAVE TRANSISTORS
HF/VHF APPLICATIONS
DESCRIPTIONDESCRIPTION:
The MS1253 is a 12.5 V Class C epitaxial silicon NPN
transistor designed primarily for land mobile transmitter
applications. This device utilizes emitter ballasting, is
extremely stable and capable of withstanding high VSWR
under operating conditions.
ABSOLUTE MAXIMUM RATINGS ABSOLUTE MAXIMUM RATINGS (Tcase = 25°°C)
Symbol
Parameter
Value
Unit
VCBO Collector-Base Voltage 45 V
VCEO Collector-Emitter Voltage 18 V
VEBO Emitter-Base Voltage 3.5 V
PDISS Power Dissipation 183 W
ICDevice Current 12.0 A
TJJunction Temperature 200 °°C
TSTG Storage Temperature -65 to +150 °°C
Thermal DataThermal Data
RTH(J-C) Thermal Resistance Junction-case 1.05 °°C/W
FeaturesFeatures
• 50 MHz
• 12.5 VOLTS
• POUT = 70 WATTS
• Gp = 10 dB MINIMUM
• COMMON EMITTER CONFIGURATION
MSCXXXX.PDF 01-19-99
MS1253
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
ELECTRICAL SPECIFICATIONS (Tcase = 25 ELECTRICAL SPECIFICATIONS (Tcase = 25°°C)C)
STATICSTATIC
Symbol
Test Conditions
Value
Min.
Typ.
Max.
Unit
BVcbo IC = 50 mA IE = 0 mA 45 --- --- V
BVces IC = 100 mA VBE = 0 V 40 --- --- V
BVebo IE = 10 mA IE = 0 mA 3.5 --- --- V
BVceo IE = 50 mA IB = 0 mA 18 --- --- V
Ices VCE = 15 V IE = 0 mA --- --- 10 mA
HFE VCE = 5 V IC = 5 A 10 --- 200 ---
DYNAMICDYNAMIC
Symbol
Test Conditions
Value
Min.
Typ.
Max.
Unit
POUT f = 50 MHz PIN = 7W VCE = 12.5V 70 --- --- W
GPE f = 50 MHz PIN = 7W VCE = 12.5V 10 --- --- dB
ηηCf = 50 MHz PIN = 7W VCE = 12.5V 45 --- --- %
Cob f = 1 MHz VCB = 12.5 V --- --- 300 pf
IMPENDANCE DATA IMPENDANCE DATA
FREQ ZIN(Ω)Ω) ZCL(Ω)Ω)
50 MHz 0.8 + j0.9 1.2 + j0.6
POUT = 70W
VCE = 12.5V
MSCXXXX.PDF 01-19-99
MS1253
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
PACKAGE MECHANICAL DATAPACKAGE MECHANICAL DATA
