PD -95340A IRF5805PbF l l l l l l l HEXFET(R) Power MOSFET Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free Halogen-Free VDSS RDS(on) max ID -30V 0.098@VGS = -10V 0.165@VGS = -4.5V -3.8A Description These P-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The TSOP-6 package with its customized leadframe produces a HEXFET(R) power MOSFET with RDS(on) 60% less than a similar size SOT-23. This package is ideal for applications where printed circuit board space is at a premium. It's unique thermal design and RDS(on) reduction enables a current-handling increase of nearly 300% compared to the SOT-23. -3.0A A D D 1 6 D 2 5 D G 3 4 S Top View TSOP-6 Absolute Maximum Ratings Parameter VDS ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C PD @TA = 70C VGS TJ , TSTG Drain-Source Voltage Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Max. Units -30 -3.8 -3.0 -15 2 1.28 0.02 20 -55 to + 150 V A W W W/C V C Thermal Resistance Parameter RJA www.irf.com Maximum Junction-to-Ambient Max. Units 62.5 C/W 1 04/20/10 IRF5805PbF Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS/TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage Forward Transconductance IDSS Drain-to-Source Leakage Current V(BR)DSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. -30 --- --- -1.0 3.5 --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 0.02 --- --- --- --- --- --- --- --- 11 2.3 1.5 11 14 90 49 511 79 50 Max. Units Conditions --- V VGS = 0V, ID = -250A --- V/C Reference to 25C, ID = -1mA 0.098 VGS = -10V, ID = -3.8A 0.165 VGS = -4.5V, ID = -3.0A -2.5 V VDS = VGS, ID = -250A --- S VDS = -10V, ID = -3.8A -15 VDS = -24V, VGS = 0V A -25 VDS = -24V, VGS = 0V, TJ = 70C -100 VGS = -20V nA 100 VGS = 20V 17 ID = -3.8A --- nC VDS = -15V --- VGS = -10V 17 VDD = -15V, VGS = -10V 21 ID = -1.0A ns 135 RG = 6.0 74 RD = 15 --- VGS = 0V --- pF VDS = -25V --- = 1.0MHz Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Min. Typ. Max. Units -2.0 -15 --- --- --- --- 19 16 -1.2 29 24 A V ns nC Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = -2.0A, VGS = 0V TJ = 25C, IF = -2.0A di/dt = -100A/s D S Notes: Repetitive rating; pulse width limited by max. junction temperature. Surface mounted on 1 in square Cu board, t 10sec. Pulse width 400s; duty cycle 2%. 2 www.irf.com IRF5805PbF VGS TOP -10.0V -4.5V -3.7V -3.5V -3.3V -3.0V -2.7V BOTTOM -2.5V 10 1 0.1 -2.5V 100 10 1 -2.5V 0.1 0.01 0.01 1 10 20s PULSE WIDTH Tj = 150C 20s PULSE WIDTH Tj = 25C 0.1 0.1 100 Fig 1. Typical Output Characteristics RDS(on) , Drain-to-Source On Resistance (Normalized) -I D , Drain-to-Source Current (A) 10 TJ = 150 C TJ = 25 C V DS = -15V 20s PULSE WIDTH 3.0 4.0 5.0 10 100 Fig 2. Typical Output Characteristics 100 0.1 2.0 1 -VDS , Drain-to-Source Voltage (V) -VDS , Drain-to-Source Voltage (V) 1 VGS -10.0V -4.5V -3.7V -3.5V -3.3V -3.0V -2.7V BOTTOM -2.5V TOP -ID, Drain-to-Source Current (A) -ID, Drain-to-Source Current (A) 100 6.0 2.0 ID = -3.8A 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = -10V 0 20 40 60 80 100 120 140 160 -VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF5805PbF VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd C, Capacitance(pF) 600 Ciss 400 200 Coss Crss 16 -VGS , Gate-to-Source Voltage (V) 800 0 1 10 8 4 0 4 6 8 10 12 14 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 100 OPERATION IN THIS AREA LIMITED BY RDS(on) -IID , Drain Current (A) -ISD , Reverse Drain Current (A) 2 QG , Total Gate Charge (nC) VDS, Drain-to-Source Voltage (V) 10 TJ = 150 C 1 TJ = 25 C 0.1 0.0 0.5 1.0 1.5 2.0 2.5 Fig 7. Typical Source-Drain Diode Forward Voltage 10us 10 100us 1ms 1 10ms TC = 25 C TJ = 150 C Single Pulse V GS = 0 V -VSD ,Source-to-Drain Voltage (V) 4 V DS=-24V V DS=-15V 12 0 100 ID = -3.8A 3.0 0.1 0.1 1 10 100 -VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRF5805PbF 4.0 VDS -ID , Drain Current (A) V GS 3.0 RD D.U.T. RG - + VDD VGS 2.0 Pulse Width 1 s Duty Factor 0.1 % Fig 10a. Switching Time Test Circuit 1.0 td(on) tr t d(off) tf VGS 0.0 25 50 75 100 125 TC , Case Temperature ( C) 10% 150 90% Fig 9. Maximum Drain Current Vs. Case Temperature VDS Fig 10b. Switching Time Waveforms Thermal Response(Z thJA ) 100 D = 0.50 0.20 10 0.10 0.05 0.02 PDM 0.01 1 t1 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJA + TA 0.0001 0.001 0.01 0.1 1 10 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 0.500 RDS ( on ) , Drain-to-Source On Resistance ( ) ( RDS(on), Drain-to -Source On Resistance) IRF5805PbF 0.450 0.400 0.350 0.300 0.250 0.200 ID = -3.8A 0.150 0.100 0.050 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 0.400 0.300 VGS = -4.5V 0.200 VGS = -10V 0.100 0.000 0 5 -VGS, Gate -to -Source Voltage (V) Fig 12. Typical On-Resistance Vs. Gate Voltage 10 15 20 -ID , Drain Current ( A ) Fig 13. Typical On-Resistance Vs. Drain Current Current Regulator Same Type as D.U.T. 50K QG QGS .2F .3F QGD D.U.T. +VDS VGS VG -3mA Charge Fig 14a. Basic Gate Charge Waveform 6 12V IG ID Current Sampling Resistors Fig 14b. Gate Charge Test Circuit www.irf.com IRF5805PbF 30 2.5 25 2.3 Power (W) -VGS(th) ( V ) 20 ID = -250A 2.1 1.9 15 10 1.7 5 0 1.5 -75 -50 -25 0 25 50 75 100 TJ , Temperature ( C ) Fig 15. Typical Vgs(th) Vs. Junction Temperature www.irf.com 125 150 0.001 0.010 0.100 1.000 10.000 100.000 Time (sec) Fig 16. Typical Power Vs. Time 7 IRF5805PbF TSOP-6 Package Outline TSOP-6 Part Marking Information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www.irf.com 8 V WH R 1 Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ IRF5805PbF TSOP-6 Tape & Reel Information Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualifications Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.04/2010 www.irf.com 9