HEXFET® Power MOSFET
04/20/10
IRF5805PbF
Absolute Maximum Ratings
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Thermal Resistance
Parameter Max. Units
VDS Drain-Source Voltage -30 V
ID @ TA = 25°C Continuous Drain Current, VGS @ -10V -3.8
ID @ TA = 70°C Continuous Drain Current, VGS @ -10V -3.0 A
IDM Pulsed Drain Current-15
PD @TA = 25°C Maximum Power Dissipation2W
PD @TA = 70°C Maximum Power Dissipation1.28 W
Linear Derating Factor 0.02 W/°C
VGS Gate-to-Source Voltage ± 20 V
TJ , TSTG Junction and Storage Temperature Range -55 to + 150 °C
Description
VDSS RDS(on) max ID
-30V 0.098@VGS = -10V -3.8A
0.165@VGS = -4.5V -3.0A
Parameter Max. Units
RθJA Maximum Junction-to-Ambient62.5 °C/W
Top View
1
2
D
G
A
D
D
D
S
34
5
6
These P-channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve the
extremely low on-resistance per silicon area. This
benefit provides the designer with an extremely efficient
device for use in battery and load management
applications.
The TSOP-6 package with its customized leadframe
produces a HEXFET® power MOSFET with RDS(on)
60% less than a similar size SOT-23. This package is
ideal for applications where printed circuit board space
is at a premium. It's unique thermal design and RDS(on)
reduction enables a current-handling increase of nearly
300% compared to the SOT-23.
lUltra Low On-Resistance
lP-Channel MOSFET
lSurface Mount
lAvailable in Tape & Reel
lLow Gate Charge
lLead-Free
lHalogen-Free
TSOP-6
PD -95340A
IRF5805PbF
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Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current MOSFET symbol
(Body Diode) showing the
ISM Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
VSD Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -2.0A, VGS = 0V
trr Reverse Recovery Time ––– 19 29 ns TJ = 25°C, IF = -2.0A
Qrr Reverse Recovery Charge ––– 16 24 nC di/dt = -100A/µs
Source-Drain Ratings and Characteristics
 
  -15
-2.0
A
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -30 ––– ––– V VGS = 0V, ID = -250µA
∆V(BR)DSS/∆TJBreakdown Voltage Temp. Coefficient ––– 0.02 ––– V/°C Reference to 25°C, ID = -1mA
––– ––– 0.098 VGS = -10V, ID = -3.8A
 ––– 0.165 VGS = -4.5V, ID = -3.0A
VGS(th) Gate Threshold Voltage -1.0 ––– -2.5 V VDS = VGS, ID = -250µA
gfs Forward Transconductance 3.5 ––– ––– S VDS = -10V, ID = -3.8A
––– ––– -15 VDS = -24V, VGS = 0V
––– ––– -25 VDS = -24V, VGS = 0V, TJ = 70°C
Gate-to-Source Forward Leakage ––– ––– -100 VGS = -20V
Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 20V
QgTotal Gate Charge ––– 11 17 ID = -3.8A
Qgs Gate-to-Source Charge ––– 2.3 ––– nC VDS = -15V
Qgd Gate-to-Drain ("Miller") Charge ––– 1.5 ––– VGS = -10V
td(on) Turn-On Delay Time ––– 11 17 VDD = -15V, VGS = -10V
trRise Time ––– 14 21 ID = -1.0A
td(off) Turn-Off Delay Time ––– 90 135 RG = 6.0Ω
tfFall Time ––– 49 74 RD = 15Ω
Ciss Input Capacitance ––– 511 ––– VGS = 0V
Coss Output Capacitance ––– 79 ––– pF VDS = -25V
Crss Reverse Transfer Capacitance ––– 50 ––– ƒ = 1.0MHz
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
IGSS
µA
Ω
RDS(on) Static Drain-to-Source On-Resistance
IDSS Drain-to-Source Leakage Current
nA
ns
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
S
D
G
Surface mounted on 1 in square Cu board, t ≤ 10sec.
IRF5805PbF
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Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
0.1
1
10
100
2.0 3.0 4.0 5.0 6.0
V = -15V
20µs PULSE WIDTH
DS
-V , Gate-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
GS
D
T = 25 C
J°
T = 150 C
J°
-60 -40 -20 020 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
-10V
-3.8A
0.1 110 100
-V
DS
, Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
-ID, Drain-to-Source Current (A)
-2.5V
20µs PULSE WIDTH
Tj = 25°C
VGS
TOP -10.0V
-4.5V
-3.7V
-3.5V
-3.3V
-3.0V
-2.7V
BOTTOM -2.5V
0.1 110 100
-V
DS
, Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
-ID, Drain-to-Source Current (A)
-2.5V
20µs PULSE WIDTH
Tj = 150°C
VGS
TOP -10.0V
-4.5V
-3.7V
-3.5V
-3.3V
-3.0V
-2.7V
BOTTOM -2.5V
IRF5805PbF
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Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
0246810 12 14
0
4
8
12
16
Q , Total Gate Charge (nC)
-V , Gate-to-Source Voltage (V)
G
GS
I =
D-3.8A
V =-15V
DS
V =-24V
DS
0.1
1
10
100
0.0 0.5 1.0 1.5 2.0 2.5 3.0
-V ,Source-to-Drain Voltage (V)
-I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J°
T = 150 C
J°
0.1
1
10
100
0.1 1 10 100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
Single Pulse
T
T
= 150 C
= 25 C
°
°
J
C
-V , Drain-to-Source Voltage (V)
-I , Drain Current (A)I , Drain Current (A)
DS
D
10us
100us
1ms
10ms
110 100
VDS, Drain-to-Source Voltage (V)
0
200
400
600
800
C, Capacitance(pF)
Coss
Crss
Ciss
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
IRF5805PbF
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Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 9. Maximum Drain Current Vs.
Case Temperature
25 50 75 100 125 150
0.0
1.0
2.0
3.0
4.0
T , Case Temperature ( C)
-I , Drain Current (A)
°
C
D
VDS
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
VDD
RG
D.U.T.
+
-
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
0.1
1
10
100
0.00001 0.0001 0.001 0.01 0.1 1 10
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1 2
JDM thJA A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response(Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
IRF5805PbF
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Fig 13. Typical On-Resistance Vs.
Drain Current
Fig 12. Typical On-Resistance Vs.
Gate Voltage
2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0
-VGS, Gate -to -Source Voltage (V)
0.050
0.100
0.150
0.200
0.250
0.300
0.350
0.400
0.450
0.500
RDS(on)
, Drain-to -Source On Resistance (
Ω)
ID = -3.8A
0 5 10 15 20
-ID , Drain Current ( A )
0.000
0.100
0.200
0.300
0.400
RDS ( on )
, Drain-to-Source On Resistance (
Ω )
VGS = -4.5V
VGS = -10V
Fig 14b. Gate Charge Test Circuit
Fig 14a. Basic Gate Charge Waveform
QG
QGS QGD
VG
Charge
D.U.T. VDS
ID
IG
-3mA
VGS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
IRF5805PbF
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Fig 15. Typical Vgs(th) Vs.
Junction Temperature
-75 -50 -25 025 50 75 100 125 150
TJ , Temperature ( °C )
1.5
1.7
1.9
2.1
2.3
2.5
-VGS(th)
( V )
ID = -250µA
Fig 16. Typical Power Vs. Time
0.001 0.010 0.100 1.000 10.000 100.000
Time (sec)
0
5
10
15
20
25
30
Power (W)
IRF5805PbF
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TSOP-6 Package Outline
TSOP-6 Part Marking Information
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Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
IRF5805PbF
www.irf.com 9
TSOP-6 Tape & Reel Information
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualifications Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.04/2010