MRF225 (sicon) The RF Line 1.5 W 225 MHz RF POWER NPN SILICON RF POWER TRANSISTOR TRANSISTOR NPN SILICON ... designed for 12.5 Volt large-signal power amplifier applications in communication equipment operating at 225 MHz. Ideally suited for Class E citizens band radio. @ Specified 12.5 Volt, 225 MHz Characteristics Output Power = 1.5 Watts Minimum Gain = 9.0 dB Efficiency = 50% @ Characterized With Series Equivalent Large-Signal tmpedance fj Parameters MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VcEO 18 Vde Collector-Base Voltage VcoBo 36 Vde Emitter-Base Voltage VEBO 4.0 Vde Collector Current Continuous lc 0.25 Adc Total Device Dissipation @ Te = 25C (1) Pp 3.5 Watts see -elleD Derate above 25C 0.02 w/c Storage Temperature Range Tstg -65 to +200 C i | G (1) These devices are designed for RF operation. The total device dissipation rating (N applies only when the devices are operated as Class C RF amplifiers. M rors af a NHS FIGURE 1 225 MHz TEST CIRCUIT SCHEMATIC + STYLE T er za 1254 re BASE RFC2 3. COLLECTOR ci RF AF q ul Output Input a c2 RFCI1 | ca t C1,2,5 50 pF Dipped Mica C3 1,.5-20 pF ARCO 402 c4 4.0-40 pF ARCO 403 c 100 pF Dipped Mica c7 1000 pF UNELCO cs 1.0uF 35 V Tantalum 1 0.6 Inch #18 AWG ~ l2 2 Turns x 0.25 inch 1D #18 AWG All JEDEC dimensions and notes apply. RFC1 Ferroxcube VK200 CASE 79-02 RFC2 2.2 wH Malded Choke 70-39 1283MRF225 (continued) ELECTRICAL CHARACTERISTICS (Tc = 25C unless otherwise noted.) | Characteristic [Symbol Min . Max] ~Unkt OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage BVcEO 18 - Vde Ue = 20 mAde, lg = 0} Collector-Emitter Breakdown Voltage BVcES 36 - Vde Uo = 20 mAde, Vge_E = 0) Emitter-Base Breakdown Voitage BVEBO 4.0 ~ Vde (Ig = 1.0 mAde, Ic = 0) Collector Cutoff Current leBo - 100 uAdc (Vog = 15 Vde, tg = 0) ON CHARACTERISTICS OC Current Gain hee 15 150 = (Io = 100 mAdec, Vc_E = 5.0 Vdc) DYNAMIC CHARACTERISTICS Output Capacitance Cob ~ 8.0 pF (Vo = 12 Vde, le = 0, f = 1.0 MHz) FUNCTIONAL TEST (Figure 1) Common-Emitter Amplifier Power Gain Gpe 9.0 - dB (Pout = 1.5 W, Voc = 12.5 Vide, f = 225 MHz) Collector Efficiency n 50 =_ % [ (Pout = 1.5 W, Vcc = 12.5 Vde, f = 225 MHz) FIGURE 2 OUTPUT POWER versus INPUT POWER 2.0 0.5 Pout, OUTPUT POWER (WATTS) 0 25 75 0 106 128 160 Pin, INPUT POWER (mW) 175 200 226 1284 FIGURE 3 SERIES EQUIVALENT IMPEDANCE {= 225 Voc = 12.5 Vdc Pout = 1.50 nt on 6.8 j 22 ~ 133.5