3
BSR18A
PNP General Purpose Amplifier
Absolute Maximum Ratings* T A = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics T A = 25°C unless otherwise noted
This device is designed as a general purpose amplifier and
switching applications at collector currents of 10 µA to 100
mA. Sourced from Process 66.
Symbol Parameter Value Units
VCEO Collector-Emitter Voltage 40 V
VCBO Collector-Base Voltage 40 V
VEBO Emitter-Base Voltage 5.0 V
ICCollector Current - Continuous 200 mA
TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C
Symbol Characteristic Max Units
*BSR18A
PDTotal Device Dissipation
Derate above 25°C350
2.8 mW
mW/°C
RθJA Thermal Resistan ce, Junction to Ambient 357 °C/W
C
E
B
SOT-23
Mark: T92
*Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm.
1997 Fairchild Semiconductor Corporation
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3) All voltages (V) and currents (A) are negative polarity for PNP transistors.
BSR18A
BSR18A
Electrical Characteristics T A = 25°C unless otherwise noted
OFF CHARACTERISTICS
Symbol Parameter Test Conditions Min Max Units
V(BR)CEO Collector-Emitter Breakdown
Voltage IC = 10 µA, IB = 0 40 V
V(BR)CBO Collector-Base Breakdown V ol tage IC = 1.0 mA, IE = 0 40 V
V(BR)EBO Emitter-Base Breakdown Voltage IE = 10 µA, IC = 0 5.0 V
ICBO Collector-Cutof f Current VCB = 30 V 50 nA
IEBO Emitter-Cutoff Current VEB = 3.0 V, IC = 0 50 nA
ON CHARACTERISTICS*
hFE DC Current Gain IC = 0.1 mA, VCE = 1.0 V
IC = 1.0 mA, VCE = 1.0 V
IC = 10 mA, VCE = 1.0 V
IC = 50 mA, VCE = 1.0 V
IC = 100 mA, VCE = 1.0 V
60
80
100
60
30
300
VCE(sat)Collector-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA
IC = 50 mA, IB = 5.0 mA 0.25
0.4 V
V
VBE(sat)Base-Emitter Saturation Voltag e IC = 10 mA, IB = 1.0 mA
IC = 50 mA, IB = 5.0 mA 0.65 0.85
0.95 V
V
SMALL SIGNAL CHARACTERISTICS
fTTransition Frequency IC = 10 mA, VCE = 20,
f = 100 MHz 250 MHz
Ccb Collector-Base Capacitance VCB = 5.0 V, IE = 0, f = 100 kHz 4.5 pF
Ceb Emitter-Base Capacitance VEB = 0.5 V, IC = 0, f = 100 kHz 10 pF
hie Input Impedance VCE= 10 V,IC= 1.0 mA,f=1.0 kHz 2.0 12 kΩ
hfe Small-Signal Current Gain VCE= 10 V,IC= 1.0 mA,f=1.0 kHz 100 400
hoe Output Adm i ttance VCE= 10 V,IC= 1.0 mA,f=1.0 kHz 3.0 60
µ
S
SWITCHING CHARACTERISTICS
tdDelay Tim e IC = 10 m A, IB1 = 1.0 mA, 35 ns
trRise Time VEB = 0.5 V 35 ns
tsStorage Time IC = 10 mA, IBon = IBoff = 1.0 mA 275 ns
tfFa ll Time 75 ns
*Pulse T est: Pulse Width ≤ 300 µs, Duty Cycle ≤ 0.01%
Spice Model
PNP (Is=1.41f Xti=3 Eg=1.11 Vaf=18.7 Bf=180.7 Ne=1.5 Ise=0 Ikf=80m Xtb=1.5 Br=4.977 Nc=2 Isc=0 Ikr=0
Rc=2.5 Cjc=9.728p Mjc=.5776 Vjc=.75 Fc=.5 Cje=8.063p Mje=.3677 Vje=.75 Tr=33.42n Tf=179.3p Itf=.4 Vtf=4
Xtf=6 Rb=10)
PNP General Purpose Amplifier
(continued)
NOTE: All voltages (V) and currents (A) are negative polarity for PNP transistors.
3
Typical Characteristics
Common-B ase Op en Circuit
Input and O ut put Capacitance
vs Reverse Bias Voltage
0.1 1 10
0
2
4
6
8
10
REVERSE BIAS VOLTA GE (V)
CAPACITANCE (pF)
Cobo
C
ibo
Typi cal Pu lsed Cu rr en t Gai n
vs Colle c t or Curre n t
0.1 0.2 0.5 1 2 5 10 20 50 100
50
100
150
200
250
I - COLLECTOR CUR RENT (m A )
h - TYPICA L PULSED CURRENT GAIN
C
FE
125 ° C
25 ° C
- 40 °C
V = 1.0V
CE
Colle c t or- E mit te r S at ura t ion
V olta ge v s Colle c tor Current
110100200
0
0.05
0.1
0.15
0.2
0.25
0.3
I - COLLECTOR CURRE NT (mA)
V - COLLECTOR EMITTER VOLTAGE (V)
C
CESAT
25 °C
- 4 0 °C
125°C
β= 10
B ase-Emitter Satur atio n
Vo lt ag e vs C o ll ector Cur rent
110100200
0
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRE NT (mA)
V - BA SE EMITTE R VOLTAGE (V)
C
BESAT
β= 10
25 °C
- 40 °C
125 °C
Base Emitter ON Voltage vs
Collector Curre nt
0.1 1 10 25
0
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRE NT (mA)
V - BASE EMITTER ON VOLTAGE (V)
C
BE(ON)
V = 1V
CE
25 °C
- 4 0 °C
125 °C
C o ll ector -C u to ff Current
vs A mb ient Temp er atu re
25 50 75 100 125
0.01
0.1
1
10
100
T - AMBIE NT TEM P ERATURE ( C)
I - COLLE C TOR CURRENT (nA)
A
CBO
°
V = 25V
CB
BSR18A
PNP General Purpose Amplifier
(continued)
BSR18A
Power Dissipation vs
Ambient Temperature
0 25 50 75 100 125 150
0
50
100
150
200
250
300
350
TEMPERA TURE ( C)
P - POWER DISS IPATION (mW)
D
o
SOT-23
Typical Characteristics (continued)
PNP General Purpose Amplifier
(continued)
Noise F igure vs Frequency
0.1 1 10 100
0
1
2
3
4
5
6
f - FREQUENCY (kHz)
NF - NOIS E FIGU RE ( d B)
I = 100 µA, R = 200Ω
C
V = 5.0V
CE
S
I = 100 µA, R = 2.0 kΩ
CS
I = 1.0 mA, R = 2 00Ω
CS
Nois e F igur e vs Source Res istan ce
0.1 1 10 100
0
2
4
6
8
10
12
R - SOURCE RE SIS TANCE ( )
NF - NOISE FIGURE (dB)
kΩ
I = 100 µA
C
V = 5.0V
f = 1.0 kHz
CE
I = 1.0 mA
C
S
Switching Times
vs Collec to r C urren t
1 10 100
1
10
100
500
I - COLLECTOR CURRENT (mA)
TIME (nS)
I = I = tr
t
s
B1
C
B2 Ic
10
tf
td
Turn On and Turn O f f Time s
vs Collector Current
1 10 100
1
10
100
500
I - CO LL ECT OR CURRENT (mA )
TIME (nS)
I = I =
t
off
B1 B2 Ic
10
t
on
V = 0.5 V
BE(OFF)
t I =
on
t
off
B1 Ic
10
3
Typical Characteristics (continued)
Input Impeda n c e
0.1 1 10
0.1
1
10
I - CO LLE CTOR CU RR ENT ( mA)
h - INPUT IMPEDANCE (k )
V = 10 V
CE
C
ie
f = 1.0 kH z
Ω
Outp ut Admi tta n ce
0.1 1 10
10
100
1000
I - COLL ECTOR CURRENT ( mA)
h - OU TPUT ADM IT TANCE ( mhos)
V = 10 V
CE
C
oe
f = 1.0 kH z
µ
Cur rent Gain
0.1 1 10
10
20
50
100
200
500
1000
I - CO LLECTOR CURREN T (mA)
h - CURRENT GAIN
V = 10 V
CE
C
fe
f = 1.0 kH z
Volta ge Feed back Ratio
0.1 1 10
1
10
100
I - CO LLECTOR CURRENT (mA)
h - VOLTAGE FEEDBA CK RATIO (x10 )
C
re
_4
BSR18A
PNP General Purpose Amplifier
(continued)
