3
BSR18A
PNP General Purpose Amplifier
Absolute Maximum Ratings* T A = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics T A = 25°C unless otherwise noted
This device is designed as a general purpose amplifier and
switching applications at collector currents of 10 µA to 100
mA. Sourced from Process 66.
Symbol Parameter Value Units
VCEO Collector-Emitter Voltage 40 V
VCBO Collector-Base Voltage 40 V
VEBO Emitter-Base Voltage 5.0 V
ICCollector Current - Continuous 200 mA
TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C
Symbol Characteristic Max Units
*BSR18A
PDTotal Device Dissipation
Derate above 25°C350
2.8 mW
mW/°C
RθJA Thermal Resistan ce, Junction to Ambient 357 °C/W
C
E
B
SOT-23
Mark: T92
*Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm.
1997 Fairchild Semiconductor Corporation
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3) All voltages (V) and currents (A) are negative polarity for PNP transistors.
BSR18A
BSR18A
Electrical Characteristics T A = 25°C unless otherwise noted
OFF CHARACTERISTICS
Symbol Parameter Test Conditions Min Max Units
V(BR)CEO Collector-Emitter Breakdown
Voltage IC = 10 µA, IB = 0 40 V
V(BR)CBO Collector-Base Breakdown V ol tage IC = 1.0 mA, IE = 0 40 V
V(BR)EBO Emitter-Base Breakdown Voltage IE = 10 µA, IC = 0 5.0 V
ICBO Collector-Cutof f Current VCB = 30 V 50 nA
IEBO Emitter-Cutoff Current VEB = 3.0 V, IC = 0 50 nA
ON CHARACTERISTICS*
hFE DC Current Gain IC = 0.1 mA, VCE = 1.0 V
IC = 1.0 mA, VCE = 1.0 V
IC = 10 mA, VCE = 1.0 V
IC = 50 mA, VCE = 1.0 V
IC = 100 mA, VCE = 1.0 V
60
80
100
60
30
300
VCE(sat)Collector-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA
IC = 50 mA, IB = 5.0 mA 0.25
0.4 V
V
VBE(sat)Base-Emitter Saturation Voltag e IC = 10 mA, IB = 1.0 mA
IC = 50 mA, IB = 5.0 mA 0.65 0.85
0.95 V
V
SMALL SIGNAL CHARACTERISTICS
fTTransition Frequency IC = 10 mA, VCE = 20,
f = 100 MHz 250 MHz
Ccb Collector-Base Capacitance VCB = 5.0 V, IE = 0, f = 100 kHz 4.5 pF
Ceb Emitter-Base Capacitance VEB = 0.5 V, IC = 0, f = 100 kHz 10 pF
hie Input Impedance VCE= 10 V,IC= 1.0 mA,f=1.0 kHz 2.0 12 kΩ
hfe Small-Signal Current Gain VCE= 10 V,IC= 1.0 mA,f=1.0 kHz 100 400
hoe Output Adm i ttance VCE= 10 V,IC= 1.0 mA,f=1.0 kHz 3.0 60
µ
S
SWITCHING CHARACTERISTICS
tdDelay Tim e IC = 10 m A, IB1 = 1.0 mA, 35 ns
trRise Time VEB = 0.5 V 35 ns
tsStorage Time IC = 10 mA, IBon = IBoff = 1.0 mA 275 ns
tfFa ll Time 75 ns
*Pulse T est: Pulse Width ≤ 300 µs, Duty Cycle ≤ 0.01%
Spice Model
PNP (Is=1.41f Xti=3 Eg=1.11 Vaf=18.7 Bf=180.7 Ne=1.5 Ise=0 Ikf=80m Xtb=1.5 Br=4.977 Nc=2 Isc=0 Ikr=0
Rc=2.5 Cjc=9.728p Mjc=.5776 Vjc=.75 Fc=.5 Cje=8.063p Mje=.3677 Vje=.75 Tr=33.42n Tf=179.3p Itf=.4 Vtf=4
Xtf=6 Rb=10)
PNP General Purpose Amplifier
(continued)
NOTE: All voltages (V) and currents (A) are negative polarity for PNP transistors.
3
Typical Characteristics
Common-B ase Op en Circuit
Input and O ut put Capacitance
vs Reverse Bias Voltage
0.1 1 10
0
2
4
6
8
10
REVERSE BIAS VOLTA GE (V)
CAPACITANCE (pF)
Cobo
C
ibo
Typi cal Pu lsed Cu rr en t Gai n
vs Colle c t or Curre n t
0.1 0.2 0.5 1 2 5 10 20 50 100
50
100
150
200
250
I - COLLECTOR CUR RENT (m A )
h - TYPICA L PULSED CURRENT GAIN
C
FE
125 ° C
25 ° C
- 40 °C
V = 1.0V
CE
Colle c t or- E mit te r S at ura t ion
V olta ge v s Colle c tor Current
110100200
0
0.05
0.1
0.15
0.2
0.25
0.3
I - COLLECTOR CURRE NT (mA)
V - COLLECTOR EMITTER VOLTAGE (V)
C
CESAT
25 °C
- 4 0 °C
125°C
β= 10
B ase-Emitter Satur atio n
Vo lt ag e vs C o ll ector Cur rent
110100200
0
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRE NT (mA)
V - BA SE EMITTE R VOLTAGE (V)
C
BESAT
β= 10
25 °C
- 40 °C
125 °C
Base Emitter ON Voltage vs
Collector Curre nt
0.1 1 10 25
0
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRE NT (mA)
V - BASE EMITTER ON VOLTAGE (V)
C
BE(ON)
V = 1V
CE
25 °C
- 4 0 °C
125 °C
C o ll ector -C u to ff Current
vs A mb ient Temp er atu re
25 50 75 100 125
0.01
0.1
1
10
100
T - AMBIE NT TEM P ERATURE ( C)
I - COLLE C TOR CURRENT (nA)
A
CBO
°
V = 25V
CB
BSR18A
PNP General Purpose Amplifier
(continued)
BSR18A
Power Dissipation vs
Ambient Temperature
0 25 50 75 100 125 150
0
50
100
150
200
250
300
350
TEMPERA TURE ( C)
P - POWER DISS IPATION (mW)
D
o
SOT-23
Typical Characteristics (continued)
PNP General Purpose Amplifier
(continued)
Noise F igure vs Frequency
0.1 1 10 100
0
1
2
3
4
5
6
f - FREQUENCY (kHz)
NF - NOIS E FIGU RE ( d B)
I = 100 µA, R = 200Ω
C
V = 5.0V
CE
S
I = 100 µA, R = 2.0 kΩ
CS
I = 1.0 mA, R = 2 00Ω
CS
Nois e F igur e vs Source Res istan ce
0.1 1 10 100
0
2
4
6
8
10
12
R - SOURCE RE SIS TANCE ( )
NF - NOISE FIGURE (dB)
kΩ
I = 100 µA
C
V = 5.0V
f = 1.0 kHz
CE
I = 1.0 mA
C
S
Switching Times
vs Collec to r C urren t
1 10 100
1
10
100
500
I - COLLECTOR CURRENT (mA)
TIME (nS)
I = I = tr
t
s
B1
C
B2 Ic
10
tf
td
Turn On and Turn O f f Time s
vs Collector Current
1 10 100
1
10
100
500
I - CO LL ECT OR CURRENT (mA )
TIME (nS)
I = I =
t
off
B1 B2 Ic
10
t
on
V = 0.5 V
BE(OFF)
t I =
on
t
off
B1 Ic
10
3
Typical Characteristics (continued)
Input Impeda n c e
0.1 1 10
0.1
1
10
I - CO LLE CTOR CU RR ENT ( mA)
h - INPUT IMPEDANCE (k )
V = 10 V
CE
C
ie
f = 1.0 kH z
Ω
Outp ut Admi tta n ce
0.1 1 10
10
100
1000
I - COLL ECTOR CURRENT ( mA)
h - OU TPUT ADM IT TANCE ( mhos)
V = 10 V
CE
C
oe
f = 1.0 kH z
µ
Cur rent Gain
0.1 1 10
10
20
50
100
200
500
1000
I - CO LLECTOR CURREN T (mA)
h - CURRENT GAIN
V = 10 V
CE
C
fe
f = 1.0 kH z
Volta ge Feed back Ratio
0.1 1 10
1
10
100
I - CO LLECTOR CURRENT (mA)
h - VOLTAGE FEEDBA CK RATIO (x10 )
C
re
_4
BSR18A
PNP General Purpose Amplifier
(continued)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROV AL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT ST A TUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
Not In Production
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICA TION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PA TENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
PowerTrench
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER
SMART START™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
FASTr™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
Rev . G
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DOME™
E2CMOSTM
EnSignaTM
FACT™
F ACT Quiet Series™
FAST
SyncFET™
TinyLogic™
UHC™
VCX™
