FFH50US60S 50A, 600V StealthTM Diode General Description Features The FFH50US60S is a StealthTM diode optimized for low loss performance in output rectification. The StealthTM family exhibits low reverse recovery current (IRM(REC)), low VF and soft recovery under typical operating conditions. * Soft Recovery . . . . . . . . . . . . . . . . . . . . . . . . tb / ta > 1.5 * Fast Recovery . . . . . . . . . . . . . . . . . . . . . . . . . trr < 80ns * Operating Temperature . . . . . . . . . . . . . . . . . . . . 175oC * Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V This device is intended for use as an output rectification diode in Telecom power supplies and other power switching applications. Lower VF and IRM(REC) reduces diode losses. Applications Formerly developmental type TA49468. * Switch Mode Power Supplies * Avalanche Energy Rated . . . . . . . . . . . . . . . . . . . . 20mJ * Power Factor Correction * Uninterruptible Power Supplies * Motor Drives * Welders Package Symbol JEDEC STYLE 2 LEAD TO-247 ANODE K CATHODE A CATHODE (BOTTOM SIDE METAL) Device Maximum Ratings TC = 25C unless otherwise noted Symbol VRRM VRWM VR Parameter Repetitive Peak Reverse Voltage Ratings 600 Units V Working Peak Reverse Voltage 600 V DC Blocking Voltage 600 V A IF(AV) Average Rectified Forward Current (TC = 120oC) 50 IFRM Repetitive Peak Surge Current (20kHz Square Wave) 100 A IFSM Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz) 500 A Power Dissipation 200 W Avalanche Energy (1A, 40mH) 20 mJ -55 to 175 C 300 260 C C PD EAVL TJ, TSTG TL TPKG Operating and Storage Temperature Range Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s Package Body for 10s, See Application Note AN-7528 CAUTION: Stresses above those listed in "Device Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. (c)2003 Fairchild Semiconductor Corporation FFH50US60S Rev A3 FFH50US60S September 2003 Device Marking 50US60S Device FFH50US60S Package TO-247 Tape Width N/A Quantity 30 Electrical Characteristics TC = 25C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off State Characteristics IR Instantaneous Reverse Current VR = 600V TC = 25C - - 100 A TC = 125C - - 1 mA TC = 25C - 1.38 1.54 V TC = 125C - 1.37 1.53 V - 110 - pF On State Characteristics VF Instantaneous Forward Voltage IF = 50A Dynamic Characteristics CJ Junction Capacitance VR = 10V, IF = 0A Switching Characteristics trr trr IRM(REC) QRR Reverse Recovery Time Reverse Recovery Time Maximum Reverse Recovery Current Reverse Recovered Charge trr Reverse Recovery Time S Softness Factor (tb/ta) IRM(REC) QRR Maximum Reverse Recovery Current Reverse Recovered Charge trr Reverse Recovery Time S Softness Factor (tb/ta) IRM(REC) QRR dIM/dt Maximum Reverse Recovery Current Reverse Recovered Charge IF = 1A, dIF/dt = 100A/s, VR = 15V - 47 80 ns IF = 50A, dIF/dt = 100A/s, VR = 15V - 75 124 ns IF = 50A, dIF/dt = 200A/s, VR = 390V, TC = 25C - 113 - ns - 9.6 - A - 0.9 - C ns IF = 50A, dIF/dt = 200A/s, VR = 390V, TC = 125C IF = 50A, dIF/dt = 1000A/s, VR = 390V, TC = 125C Maximum di/dt during tb - 235 - - 1.5 - - - 15 - A - 2.3 - C - 110 - ns - 0.8 - - - 46 - A - 3.1 - C - 1000 - A/s Thermal Characteristics RJC Thermal Resistance Junction to Case - - 0.75 C/W RJA Thermal Resistance Junction to Ambient TO-247 - - 30 C/W (c)2003 Fairchild Semiconductor Corporation FFH50US60S Rev A3 FFH50US60S Package Marking and Ordering Information FFH50US60S Typical Performance Curves 1000 100 175oC IR, REVERSE CURRENT (A) IF, FORWARD CURRENT (A) 90 80 70 60 50 175oC 40 125oC 30 o 75 C 20 25oC 100 150oC 125oC 10 100oC 1 75oC 0.1 10 25oC 0 0.25 0.5 0.75 1.0 1.25 1.5 1.75 0.01 100 2.0 200 VF , FORWARD VOLTAGE (V) Figure 1. Forward Current vs Forward Voltage 200 600 VR = 390V, TC = 125oC 200 tb at dIF/dt = 200A/s, 500A/s, 800A/s tb at IF = 100A, 50A, 25A t, RECOVERY TIMES (ns) t, RECOVERY TIMES (ns) 500 225 180 140 120 100 80 60 175 150 125 100 75 40 50 20 ta at dIF/dt = 200A/s, 500A/s, 800A/s 0 0 10 20 30 40 50 60 70 80 90 ta at IF = 100A, 50A, 25A 25 100 0 IF , FORWARD CURRENT (A) VR = 390V, TC = 125oC dIF/dt = 800A/s 40 30 dIF/dt = 500A/s 20 dIF/dt = 200A/s 10 0 0 10 20 30 40 50 60 70 80 90 100 IF , FORWARD CURRENT (A) Figure 5. Maximum Reverse Recovery Current vs Forward Current (c)2003 Fairchild Semiconductor Corporation 400 600 800 1000 1200 Figure 4. ta and tb Curves vs dIF /dt IRM(REC) , MAX REVERSE RECOVERY CURRENT (A) 50 200 dIF /dt, CURRENT RATE OF CHANGE (A/s) Figure 3. ta and tb Curves vs Forward Current IRM(REC) , MAX REVERSE RECOVERY CURRENT (A) 400 Figure 2. Reverse Current vs Reverse Voltage VR = 390V, TC = 125oC 160 300 VR , REVERSE VOLTAGE (V) 60 VR = 390V, TC = 125oC 50 40 IF = 100A 30 IF = 50A 20 IF = 25A 10 0 0 200 400 600 800 1000 1200 dIF /dt, CURRENT RATE OF CHANGE (A/s) Figure 6. Maximum Reverse Recovery Current vs dIF /dt FFH50US60S Rev A3 FFH50US60S 2.4 6 VR = 390V, TC = 125oC QRR, REVERSE RECOVERED CHARGE (C) 2.2 2.0 1.8 IF = 100A 1.6 IF = 50A 1.4 IF = 25A 1.2 1.0 0.8 0.6 VR = 390V, TC = 125oC 5 4 IF = 100A 3 IF = 50A 2 IF = 25A 1 0 0 200 400 600 800 1000 0 1200 200 dIF /dt, CURRENT RATE OF CHANGE (A/s) 1400 CJ , JUNCTION CAPACITANCE (pF) f = 1MHZ 1200 1000 800 600 400 200 0.1 1 10 600 800 1000 1200 100 Figure 8. Reverse Recovery Charge vs dIF/dt IRM(REC) , MAX REVERSE RECOVERY CURRENT (A) Figure 7. Reverse Recovery Softness Factor vs dIF /dt 0 0.03 400 dIF /dt, CURRENT RATE OF CHANGE (A/s) -22 180 IF = 50A, VR = 390V, dIF /dt = 600A/usec -24 -26 170 160 IRM(REC) -28 150 -30 140 -32 130 -34 120 110 -36 tRR -38 t, RECOVERY TIMES (ns) S, REVERSE RECOVERY SOFTNESS FACTOR Typical Performance Curves (Continued) 100 90 -40 80 -42 25 50 75 100 125 150 175 TC, CASE TEMPERATURE (oC) VR , REVERSE VOLTAGE (V) Figure 9. Junction Capacitance vs Reverse Voltage Figure 10. Maximum Reverse Recovery Current and trr vs Case Temperature IF(AV), AVERAGE FORWARD CURRENT (A) 60 50 40 30 20 10 0 115 125 135 145 155 TC, CASE TEMPERATURE 165 175 (oC) Figure 11. DC CURRENT DERATING CURVE (c)2003 Fairchild Semiconductor Corporation FFH50US60S Rev A3 FFH50US60S Typical Performance Curves (Continued) DUTY CYCLE - DESCENDING ORDER 0.5 0.2 0.1 0.05 0.02 0.01 ZJA, NORMALIZED THERMAL IMPEDANCE 1.0 PDM 0.1 t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TA SINGLE PULSE 0.01 10-5 10-4 10-3 10-2 10-1 t, RECTANGULAR PULSE DURATION (s) 100 101 Figure 12. Normalized Maximum Transient Thermal Impedance Test Circuit and Waveforms VGE AMPLITUDE AND RG CONTROL dIF/dt t1 AND t2 CONTROL IF L IF DUT RG CURRENT SENSE dIF trr dt ta tb 0 + VGE - MOSFET t1 0.25 IRM VDD IRM t2 Figure 13. trr Test Circuit Figure 14. trr Waveforms and Definitions I = 1A L = 40mH R < 0.1 VDD = 50V EAVL = 1/2LI2 [VR(AVL) /(VR(AVL) - VDD)] Q1 = IGBT (BVCES > DUT VR(AVL)) L CURRENT SENSE VAVL R + VDD Q1 VDD DUT IL t0 Figure 15. Avalanche Energy Test Circuit (c)2003 Fairchild Semiconductor Corporation IL I V t1 t2 t Figure 16. Avalanche Current and Voltage Waveforms FFH50US60S Rev A3 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. FACT Quiet SeriesTM ACExTM FAST(R) ActiveArrayTM FASTrTM BottomlessTM FRFETTM CoolFETTM CROSSVOLTTM GlobalOptoisolatorTM GTOTM DOMETM HiSeCTM EcoSPARKTM I2CTM E2CMOSTM EnSignaTM ImpliedDisconnectTM FACTTM ISOPLANARTM Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I5