©2003 Fairchild Semiconductor Corporation
September 2003
FFH50US60S Rev A3
FFH50US60S
FFH50US60S
50A, 600V Stealth™ Diode
General Description
The FFH50US60S is a Stealth™ diode optimized for low loss
performance in output rectification. Th e Stealth™ f amily
exhibits low reverse recovery current (IRM(REC)), low VF and
soft recovery under typical operating conditions.
This device is intended for use as an output rec tification diode
in Telecom pow er supplies and other power switching
appli cations. Lower VF and IRM(REC) reduces diode losses.
Formerly developmental type TA49468.
Features
• Soft R e c overy . . . . . . . . . . . . . . . . . . . . . . . .tb / ta > 1.5
• Fast R e c overy . . . . . . . . . . . . . . . . . . . . . . . . . trr < 80ns
• Operating Temperature . . . . . . . . . . . . . . . . . . . . 175oC
• Reverse Vo ltage. . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
• Avalan ch e En e rgy Rated . . . . . . . . . . . . . . . . . . . . 20mJ
Applications
• Switch Mode Power Supplies
• Power Factor Correction
• Uninterruptible Po wer Supplies
• Motor Drives
•Welders
Device Maximum Ratings TC = 25°C unless otherwise noted
Symbol Parameter Ratings Units
VRRM Repetitive Peak Reverse Voltage 600 V
VRWM Working Peak Reverse Voltage 600 V
VRDC Blocking Voltage 600 V
IF(AV) Average Rectified Forward Current (TC = 120oC) 50 A
IFRM Repetitive Peak Surge Current (20kHz Square Wave) 100 A
IFSM Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz) 500 A
PDPow er Dissipation 200 W
EAVL Avalanche Energy (1A, 40mH) 20 mJ
TJ, TSTG Operating and Storage Temperature Range -55 to 175 °C
TL
TPKG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s
Package Body for 10s, See Application Note AN-7528 300
260 °C
°C
CAUTION: Stresses above those listed in “Device Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
K
A
CATHODE
(BOTTOM SIDE
CATHODE
ANODE
METAL)
JEDEC STYLE 2 LEAD TO-247
Package Symbol
©2003 Fairchild Semiconductor Corporation FFH50US60S Rev A3
FFH50US60S
Package Marking and Ordering Information
Electrical Characteristics TC = 25°C unl e ss othe r wise noted
Off State Characteristics
On State Charac t eris ti cs
Dynamic Characteristics
Switching Characteristics
Thermal Characteristics
Device Marking Dev ice P ackage Tape Width Quantity
50US60S FFH50US60S TO-247 N/A 30
Symbol P arameter Test Conditions Min Typ Max Units
IRInstantaneous Reverse Current VR = 600V TC = 25°C - - 100 µA
TC = 125°C--1mA
VFInstantaneous Forward Voltage IF = 50A TC = 25°C - 1.38 1.54 V
TC = 125°C - 1.37 1.53 V
CJJunction Capacitance VR = 10V, IF = 0A - 110 - pF
trr Reverse Recovery Time IF = 1A, dIF/dt = 100A/µs, VR = 15V - 47 80 ns
IF = 50A, dIF/dt = 100A/µs, VR = 15V - 75 124 ns
trr Reverse Recovery Time IF = 50A,
dIF/dt = 200A/µs,
VR = 390V, TC = 25°C
- 113 - ns
IRM(REC) Maximum Reverse Recovery Current - 9.6 - A
QRR Reverse Recovered Charge - 0.9 - µC
trr Reverse Recovery Time IF = 50A,
dIF/dt = 200A/µs,
VR = 390V,
TC = 125°C
- 235 - ns
S Softness Factor (tb/ta)-1.5--
IRM(REC) Maximum Reverse Recovery Current - 15 - A
QRR Reverse Recovered Charge - 2.3 - µC
trr Reverse Recovery Time IF = 50A,
dIF/dt = 1000A/µs,
VR = 390V,
TC = 125°C
- 110 - ns
S Softness Factor (tb/ta)-0.8--
IRM(REC) Maximum Reverse Recovery Current - 46 - A
QRR Reverse Recovered Charge - 3.1 - µC
dIM/dt Maximum di/dt during tb- 1000 - A/µs
RθJC Thermal Resistance Junction to Case - - 0.75 °C/W
RθJA Thermal Resistance Junction to Ambient TO-247 - - 30 °C/W
©2003 Fairchild Semiconductor Corporation FFH50US60S Rev A3
FFH50US60S
Typical Performance Curves
Figure 1. Forward Current vs Forward Voltage Figure 2. Reverse Current vs Reverse Voltage
Figure 3. ta and tb Curves vs Forward Current Figure 4. ta and tb Curves vs dIF/dt
Figure 5. Maximum Reverse Recovery Current vs
Forward Current Figure 6. Maximum Reverse Recovery Current vs
dIF/dt
0
20
30
50
70
80
100
0.25 0.5 0.75 1.0 1.25 1.5 1.75
VF, FORWARD VOLTAGE (V)
IF, FOR WARD CURRENT (A)
175oC
125oC
2.0
75oC
25oC
90
60
40
10
VR, REVERSE VOLTAGE (V)
IR, REVERSE CURRENT (µA)
0.01
0.1
1
10
100
1000
100 200 300 400 500 600
125oC
100oC
75oC
25oC
150oC
175oC
0
20
40
140
160
180
200
IF, FORWARD CURRENT (A)
t, RECOVERY TIMES (ns)
tb at dIF/dt = 200A/µs, 500A/µs, 800A/µs
VR = 390V, TC = 125oC
ta at dIF/dt = 200A/µs, 500A/µs, 800A/µs
0 10 6070809010020 30 40 50
120
100
80
60
dIF/dt, CURRENT RATE OF CHANGE (A/µs)
t, RECOVERY TIMES (ns)
25
50
75
100
125
150
225 VR = 390V, TC = 125oC
175 tb at IF = 100A, 50A, 25A
ta at IF = 100A, 50A, 25A
0 200 400 600 800 1000 1200
200
IF, FORWARD CURRENT (A)
IRM(REC), MAX REVERSE RECOVERY CURRENT (A)
dIF/dt = 200A/µs
VR = 390V, TC = 125oC
0 10 60708090100
0
10
20
30
50
40
dIF/dt = 500A/µs
dIF/dt = 800A/µs
20 30 40 50
dIF/dt, CURRENT RATE OF CHANGE (A/µs)
IF = 100A
IF = 25A
IRM(REC) , MAX REVERSE RECOVERY CURRENT (A)
IF = 50A
VR = 390V, TC = 125oC
0
10
20
30
40
50
60
0 200 400 600 800 1000 1200
©2003 Fairchild Semiconductor Corporation FFH50US60S Rev A3
FFH50US60S
Figure 7. Reverse Recovery Softness Factor vs
dIF/dt Figure 8. Reverse Re covery Charge vs dIF/dt
Figure 9. J unction Ca pacitance vs Re verse Voltage Figure 10. Maximum Reverse Re cover y Current
and trr vs Case Temperature
Figure 11. DC CURRENT DERATING CURVE
Typical Performance Curves (Continued)
dIF/dt, CURRENT RATE OF CHANGE (A/µs)
S, REVERSE RECOVERY SOFTNESS FACTOR
VR = 390V, TC = 125oC
0 200 400 600 800 1000 1200
IF = 25A
IF = 50A
IF = 100A
0.6
0.8
1.0
1.2
1.4
1.6
2.4
2.0
2.2
1.8
dIF/dt, CURRENT RATE OF CHANGE (A/µs)
QRR, REVERSE RECOVERED CHARGE (µC)
IF = 25A
VR = 390V, TC = 125oC
0
1
2
3
4
5
6
IF = 100A
IF = 50A
0 200 400 600 800 1000 1200
VR, REVERSE VOLTAGE (V)
CJ, JUNCTION CAPACITANCE (pF)
0.1 1 10 1000.03
f = 1MHZ
0
200
400
600
800
1000
1400
1200
t, RECOVERY TIMES (ns)
25 50 75 100 125 175
TC, CASE TEMPERATURE (oC)
IRM(REC) , MAX REVERSE RECOVERY CURRENT (A)
IRM(REC)
tRR
IF = 50A, VR = 390V, dIF/dt = 600A/usec
150
-38
-36
-34
-32
-30
-28
-26
-24
-22
-40
-42
100
110
120
130
140
150
160
170
180
90
80
0155 165135 175
10
20
30
TC, CASE TEMPERATURE (oC)
IF(AV), AVERAGE FORWARD CURRENT (A)
145125115
60
50
40
©2003 Fairchild Semiconductor Corporation FFH50US60S Rev A3
FFH50US60S
Figure 12. Normalized Maximum Transient Thermal Impedance
Typical Performance Curves (Continued)
t, RECTANGULAR PULSE DURATION (s)
10
-5
10
-2
10
-1
Z
θ
JA
,
NORMALIZED
THERMAL IMPEDANC E
0.01 10
-4
10
-3
SINGLE PU LSE
10
0
0.1
10
1
DU TY CYCLE - DESCENDING O RDER
0.5
0.2
0.1
0.05
0.01
0.02
NOTES:
DUT Y FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JA
x R
θ
JA
+ T
A
P
DM
t
1
t
2
1.0
Test Circuit and Waveforms
Figure 13. trr Test Circuit Figure 14. trr Wavefor ms and Definit ions
Figure 15. Avalanche Energy Test Circuit Figure 16. Avalanche C urr ent and Voltage
Waveforms
RG
L
VDD
MOSFET
CURRENT
SENSE
DUT
VGE t1
t2
VGE AMPLITUDE AND
t1 AND t2 CONTROL IF
RG CONTROL dIF/dt
+
-
dt
dIF
IFtrr
tatb
0
IRM
0.25 IRM
DUT
CURRENT
SENSE +
LR
VDD
R < 0.1Ω
EAVL = 1/2LI2 [VR(AVL)/(VR(AVL) - VDD)]
Q1 = IGBT (B VCES > DUT VR(AVL))
-
VDD
Q1
I = 1A
L = 40mH
V
DD
= 50V
IV
t0t1t2
IL
VAVL
t
IL
Rev. I5
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PRODUCT STATUS DEFINITIONS
Definition of Terms
ACEx™
ActiveArray™
Bottomless™
CoolFET™
CROSSVOLT™
DOME™
EcoSPARK™
E2CMOS™
EnSigna™
FACT™
FACT Quiet Series™
FAST®
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
I2C™
ImpliedDisconnect™
ISOPLANAR™
LittleFET™
MICROCOUPLER™
MicroFET™
MicroPak™
MICROWIRE™
MSX™
MSXPro™
OCX™
OCXPro™
OPTOLOGIC®
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench®
QFET®
QS™
QT Optoelectronics™
Quiet Serie s™
RapidConfigure™
RapidConnect™
SILENT SWITCHER®
SMART START™
SPM™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic®
TINYOPTO™
TruTranslation™
UHC™
UltraFET®
VCX™
Across the board. Around the world.™
The Power Franchise™
Programmable Active Droop™
Datasheet Identification Product Status Definition
Advance Inf ormation Formative or In
Design This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary First Production This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improv e
design.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete Not In Production This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
