DS30040 Rev. A-2 1 of 2 MMBT2907A
MMBT2907A
PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
·Epitaxial Planar Die Construction
·Complementary NPN Type Available
(MMBT2222A)
·Ideal for Medium Power Amplification and
Switching
Characteristic Symbol MMBT2907A Unit
Collector-Base Voltage VCBO -60 V
Collector-Emitter Voltage VCEO -60 V
Emitter-Base Voltage VEBO -5.0 V
Collector Current - Continuous (Note 1) IC-600 mA
Power Dissipation (Note 1) Pd350 mW
Thermal Resistance, Junction to Ambient (Note 1) RqJA 357 K/W
Operating and Storage and Temperature Range Tj,T
STG -55 to +150 °C
Features
Maximum Ratings @ TA= 25°C unless otherwise specified
A
E
J
L
M
BC
H
G
D
K
TOP VIEW
C
E
B
Mechanical Data
·Case: SOT-23, Molded Plastic
·Terminals: Solderable per MIL-STD-202,
Method 208
·Terminal Connections: See Diagram
·Marking: K2F, R2F
·Weight: 0.008 grams (approx.)
SOT-23
Dim Min Max
A0.37 0.51
B1.19 1.40
C2.10 2.50
D0.89 1.05
E0.45 0.61
G1.78 2.05
H2.65 3.05
J0.013 0.15
K0.89 1.10
L0.45 0.61
M0.076 0.178
All Dimensions in mm
Notes: 1. Valid provided that terminals are kept at ambient temperature.
2. Pulse test: Pulse width £300ms, duty cycle £2%.
DS30040 Rev. A-2 2 of 2 MMBT2907A
Electrical Characteristics @ TA= 25°C unless otherwise specified
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 2)
Collector-Base Breakdown Voltage V(BR)CBO -60 ¾VIC= -10mA, IE= 0
Collector-Emitter Breakdown Voltage V(BR)CEO -60 ¾VIC= -10mA, IB= 0
Emitter-Base Breakdown Voltage V(BR)EBO -5.0 ¾VIE= -10mA, IC= 0
Collector Cutoff Current ICBO ¾-10 nA
mA
VCB = -50V, IE= 0
VCB = -50V, IE= 0, TA= 125°C
Collector Cutoff Current ICEX ¾-50 nA VCE = -30V, VEB(OFF) = -0.5V
Base Cutoff Current IBL ¾-50 nA VCE = -30V, VEB(OFF) = -0.5V
ON CHARACTERISTICS (Note 2)
DC Current Gain hFE
75
100
100
100
50
¾
¾
¾
300
¾
¾
IC= -100µA, VCE = -10V
IC= -1.0mA, VCE = -10V
IC= -10mA, VCE = -10V
IC= -150mA, VCE = -10V
IC= -500mA, VCE = -10V
Collector-Emitter Saturation Voltage VCE(SAT) ¾-0.4
-1.6 VIC= -150mA, IB= -15mA
IC= -500mA, IB= -50mA
Base- Emitter Saturation Voltage VBE(SAT) ¾-1.3
-2.6 VIC= 150mA, IB= 15mA
IC= 500mA, IB= 50mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance Cobo ¾8.0 pF VCB = -10V, f = 1.0MHz, IE= 0
Input Capacitance Cibo —30pF
VEB = -2.0V, f = 1.0MHz, IC= 0
Current Gain-Bandwidth Product fT200 ¾MHz VCE = -20V, IC= -50mA,
f = 100MHz
SWITCHING CHARACTERISTICS
Turn-On Time toff ¾45 ns
Delay Time td¾10 ns VCC = -30V, IC= -150mA,
IB1 = -15mA
Rise Time tr¾40 ns
Turn-Off Time toff ¾100 ns
Storage Time ts¾80 ns VCC = -6.0V, IC= -150mA,
IB1 = IB2 = -15mA
Fall Time tf¾30 ns
Notes: 1. Valid provided that terminals are kept at ambient temperature.
2. Pulse test: Pulse width £300ms, duty cycle £2%.
