BAT54S-G3-08 - Vishay Semiconductors

BAT54-G, BAT54A-G, BAT54C-G, BAT54S-G

www.vishay.com Vishay Semiconductors

Rev. 1.4, 13-Feb-18 1Document Number: 83344

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Small Signal Schottky Diodes, Single and Dual

DESIGN SUPPORT TOOLS click logo to get started

FEATURES

• These diodes feature very low turn-on voltage

and fast switching

• These devices are protected by a PN junction

guardring against excessive voltage, such as

electrostatic discharges

• AEC-Q101 qualified available

(part number on request)

• Base P/N-G3 - green, commercial grade

• Material categorization: 

for definitions of compliance please see

www.vishay.com/doc?99912

MECHANICAL DATA

Case: SOT-23

Weight: approx. 8.1 mg

Packaging codes/options:

18/10K per 13" reel (8 mm tape), 10K/box

08/3K per 7" reel (8 mm tape), 15K/box



Note

(1) Device on fiberglass substrate, see layout on next page.

Note

(1) Device on fiberglass substrate, see layout on next page.

Top View

BAT54-G

BAT54C-G

BAT54A-G

BAT54S-G

Available

Models

PARTS TABLE

PART ORDERING CODE CIRCUIT CONFIGURATION TYPE MARKING REMARKS

BAT54-G BAT54-G3-08 or BAT54-G3-18 Single L8

Tape and reel

BAT54A-G BAT54A-G3-08 or BAT54A-G3-18 Common anode L46

BAT54C-G BAT54C-G3-08 or BAT54C-G3-18 Common cathode L47

BAT54S-G BAT54S-G3-08 or BAT54S-G3-18 Dual serial L48

ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)

PARAMETER TEST CONDITION SYMBOL VALUE UNIT

Repetitive peak reverse voltage VRRM 30 V

Forward continuous current (1) IF200 mA

Repetitive peak forward current (1) IFRM 300 mA

Surge forward current (1) tp < 1 s IFSM 600 mA

Power dissipation Ptot 230 mW

THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

PARAMETER TEST CONDITION SYMBOL VALUE UNIT

Thermal resistance junction to ambient air (1) RthJA 430 K/W

Junction temperature Tj125 °C

Storage temperature range Tstg -65 to +150 °C

Operating temperature range Top -55 to +125 °C

BAT54-G, BAT54A-G, BAT54C-G, BAT54S-G

www.vishay.com Vishay Semiconductors

Rev. 1.4, 13-Feb-18 2Document Number: 83344

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

LAYOUT FOR RthJA TEST

Thickness:

Fiberglass 1.5 mm (0.059 inches)

Copper leads 0.3 mm (0.012 inches)

TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

Fig. 1 - Typical Forward Voltage Forward Current vs.

Various Temperatures

Fig. 2 - Diode Capacitance vs. Reverse Voltage VR

ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT

Reverse breakdown voltage IR = 100 μA (pulsed) V(BR) 30 V

Leakage current Pulse test tp < 300 μs,  < 2 % at

VR = 25 V IR2μA

Forward voltage

IF = 0.1 mA, tp < 300 μs,  < 2 % VF240 mV

IF = 1 mA, tp < 300 μs,  < 2 % VF320 mV

IF = 10 mA, tp < 300 μs,  < 2 % VF400 mV

IF = 30 mA, tp < 300 μs,  < 2 % VF500 mV

IF = 100 mA, tp < 300 μs,  < 2 % VF800 mV

Diode capacitance VR = 1 V, f = 1 MHz CD10 pF

Reverse recovery time IF = 10 mA to IR = 10 mA,

iR = 1 mA, RL = 100 trr 5ns

17451

15 (0.59)

12 (0.47)

0.8 (0.03)

5 (0.2)

7.5 (0.3)

3 (0.12)

1 (0.4)

2 (0.8)

1.5 (0.06)

5.1 (0.2)

18867

1000

100

0.1

0.01

I - Forward Current (mA)

0 0.4 0.6 1.2 1.4

0.8 10.2

VF- Forward Voltage (V)

= 125 °CT

25 °C

- 40 °C

18868

00 4 12 16 20 24 28

C - Typical Capacitance (pF)

VR- Reverse Voltage (V)

BAT54-G, BAT54A-G, BAT54C-G, BAT54S-G

www.vishay.com Vishay Semiconductors

Rev. 1.4, 13-Feb-18 3Document Number: 83344

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Fig. 3 - Typical Variation of Reverse Current

vs. Various Temperatures

PACKAGE DIMENSIONS in millimeters (inches): SOT-23

100

1000

0.1

0.01

510152002530

VR- Reverse Voltage (V)

I - Reverse Current (µA)

18869

= 125 °CT

100 °C

75 °C

50 °C

25 °C

Foot print recommendation:

Rev. 8 - Date: 23.Sept.2009

17418

Document no.: 6.541-5014.01-4

0.9 (0.035)

1 (0.039)

0.9 (0.035)

1 (0.039)

1.43 (0.056)

0.45 (0.018)

0.35 (0.014)

2.8 (0.110)

3.1 (0.122)

0.45 (0.018)

0.35 (0.014)

0.45 (0.018)

0.35 (0.014)

0.1 (0.004) max.

2.35 (0.093)

2.6 (0.102)

0.175 (0.007)

0.098 (0.004)

1.15 (0.045)

0.9 (0.035)

1.20 (0.047)

0.95 (0.037) 0.95 (0.037)

2 (0.079)

0.7 (0.028)

0.9 (0.035)

0° to 8°

0.2 (0.008)

0.3 (0.012)

0.5 (0.020)

0.550 ref. (0.022 ref.)

Legal Disclaimer Notice

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Revision: 08-Feb-17 1Document Number: 91000

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

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