NPN Silicon
Epitaxial Transistors
Features
Maximum Ratings
Symbol Rating Rating Unit
VCEO Collector-Emitter Voltage 50 V
VCBO Collector-Base Voltage 60 V
VEBO Emitter-Base Voltage 7 V
IC Collector Current 150 mA
PC Collector power dissipation 200 mW
TJ Junction Temperature 150 к
TSTG Storage Temperature -55 to +150 к
Electrical Characteristics @ 25к Unless Otherwise Specified
Symbol Parameter Min Typ Max Units
OFF CHARACTERISTICS
ICBO Collector Cutoff Current
(VCB=-60Vdc)
--- --- 100 nAdc
IEBO Emitter Cutoff Current
(VEB=-6.0Vdc)
--- --- 100 nAdc
ON CHARACTERISTICS
BVCBO Collector-base breakdown voltage
(IC=-50µAdc )
60 --- --- Vdc
BVCEO Collector-emitter breakdown
voltage (IC=-1µAdc)
50 --- --- Vdc
BVEBO Emitter-base breakdown voltage
(IE=-50µAdc)
6 --- --- Vdc
hFE DC Current Gain
(IC=-1mAdc, VCE=-6.0Vdc)
120 --- 560 ---
VCE(sat) Collector Saturation Voltage*
(IC=-50mAdc, IB=-5.0mAdc)
--- --- 0.4 Vdc
Cob Output Capacitance
(VCB=-12.0Vdc, IE=0, f=1.0MHz)
--- 2.0 3.5 pF
fT Gain Bandwidth product
(VCE=-12Vdc, IE=2mAdc,f=30MHz)
--- 180 --- MHz
hFE CLASSIFICATION
Rank
hFE120~270180~390 270~560
omponents
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Revision: C 2013/09/24
SOT-323
Suggested Solder
Pad Layout
INCHES MM
DIM MIN MAX MIN MAX NOTE
A .071 .087 1.80 2.20
B .045 .053 1.15 1.35
D .026 Nominal 0.65Nominal
E .047 .055 1.20 1.40
F .012 .016 .30 .40
G .000 .004 .000 .100
H .035 .039 .90 1.00
J .004 .010 .100 .250
A
C
B
D
E
F
GH
J
1.90
0
.7
0
0.90
0
.
65
0.65
DIMENSIONS
K
TM
Micro Commercial Components
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B
C
AB C
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Marking BQ
BR
BS
• Low Cob . Cob=2.0pF(Typ)
• Complementary to 2SC1576A
• Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
• Epoxy meets UL 94 V-0 flammability rating
• Moisure Sensitivity Level 1
2SC4081-A
2SC4081-B
2SC4081-C
mm
Halogen free available upon request by adding suffix "-HF"
•
C .083 .096 2.10 2.45
K .006 .016 .15 .40
Fig.1 Grounded emitter propagation
characteristics
0
0.1
0.2
0.5
2
20
50
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
1
5
10
Ta
=
100°C
V
CE
=6V
COLLECTOR CURRENT : I
C
(mA)
BASE TO EMITTER VOLTAGE : V
BE
(V)
25°C
−55°C
Fig.2 Grounded emitter output
characteristics ( Ι )
0
20
40
60
80
100
0.4 0.8 1.2 1.6 2.00
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
0.05mA
0.10mA
0.15mA
0.25mA
0.30mA
0.35mA
0.20mA
Ta=25°C
I
B
=0A
0.40mA
0.50mA
0.45mA
0
0
2
8
10
4 8 12 16
4
6
20
I
B
=0A
Ta=25°C
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
3µA
6µA
9µA
12µA
15µA
18µA
21µA
24µA
27µA
30µA
Fig.3 Grounded emitter output
characteristics ( ΙΙ )
0.2
20
10 0.5 1 2 5 10 20 50 100 200
50
100
200
500
VCE=5V
3V
1V
Ta=25°C
Fig.4 DC current gain vs.
collector current ( Ι )
DC CURRENT GAIN : h
FE
COLLECTOR CURRENT : I
C
(mA)
0.2 0.5 1 2 5 10 20 50 100 200
20
10
50
100
200
500
25°C
−55°C
Ta=100°C
V
CE
=
5V
Fig.5 DC current gain vs.
collector current ( ΙΙ )
DC CURRENT GAIN : h
FE
COLLECTOR CURRENT : I
C
(mA)
Fig. 6 Collector-emitter saturation
voltage vs. collector current
0.2
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
COLLECTOR CURRENT : I
C
(mA)
0.01
0.02
0.05
0.1
0.2
0.5
0.5 1 2 5 10 20 50 100 200
I
C/IB=50
20
10
Ta=25°C
Fig.7 Collector-emitter saturation
voltage vs. collector current ( Ι )
0.2
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
COLLECTOR CURRENT : I
C
(mA)
0.01
0.02
0.05
0.1
0.2
0.5
0.5 1 2 5 10 20 50 100 200
I
C
/I
B
=10
Ta=100°C
25°C
−55°C
Fig.8 Collector-emitter saturation
voltage vs. collector current (ΙΙ)
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
COLLECTOR CURRENT : I
C
(mA)
0.2
0.01
0.02
0.05
0.1
0.2
0.5
0.5 1 2 5 10 20 50 100
I
C
/I
B
=50
Ta=100°C
25°C
−55°C
Fig.9 Gain bandwidth product vs.
emitter current
50
−0.5 −1−2−5−10 −20 −50 −100
100
200
500
Ta=25°C
V
CE
=6V
EMITTER CURRENT : I
E
(mA)
TRANSITION FREQUENCY : f
T
(MHz)
4081
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Micro Commercial Components
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Fig.10 Collector output capacitance vs.
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
EMITTER TO BASE VOLTAGE : V
EB
(V)
COLLECTOR OUTPUT CAPACITANCE : Cob (
pF)
EMITTER INPUT CAPACITANCE : Cib (
pF)
0.2 0.5 1 2 5 10 20 50
1
2
5
10
20
Cob
Ta=25°C
f
=
1MHz
I
E
=0A
I
C
=0A
Cib
Fig.11 Base-collector time constant
vs. emitter current
−0.2 −0.5 −1−2−5−10
BASE COLLECTOR TIME CONSTANT : Cc·r
bb'
(ps)
EMITTER CURRENT : I
E
(mA)
10
20
50
100
200 Ta=25°C
f=32MH
Z
V
CB
=6V
4081 MCC
Revision: C 2013/09/24
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Micro Commercial Components
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3
Ordering Information :
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approval of Micro Commercial Components Corporation.
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Device Packing
Part Number-TP
Tape&Reel;3Kpcs/Reel
Note : Adding "-HF" suffix for halogen free, eg. Part Number-TP-HF
