NESG250134
NEC's NPN SiGe RF TRANSISTOR
FOR MEDIUM OUTPUT POWER
AMPLIFICATION (800 mW)
3-PIN POWER MINIMOLD (34 PACKAGE)
California Eastern Laboratories
• THIS PRODUCT IS SUITABLE FOR
MEDIUM OUTPUT POWER (800 mW) AMPLIFICATION
PO = 29 dBm TYP. @ VCE = 3.6 V, Pin = 15 dBm, f = 460 MHz
PO = 29 dBm TYP. @ VCE = 3.6 V, Pin = 20 dBm, f = 900 MHz
• MAXIMUM STABLE GAIN:
MSG = 23 dB TYP @ VCE = 3.6 V, IC = 100 mA, f = 460 MHz
• SiGe TECHNOLOGY:
UHS2-HV process
• ABSOLUTE MAXIMUM RATINGS:
VCBO = 20 V
• 3-PIN POWER MINIMOLD (34 PACKAGE)
FEATURES
ORDERING INFORMATION
Remark To order evaluation samples, contact your nearby sales office.
Unit sample quantity is 25 pcs.
ABSOLUTE MAXIMUM RATINGS (TA =+25ºC)
Note Mounted on 34.2 cm2 × 0.8 mm (t) glass epoxy PWB
PART NUMBER ORDER NUMBER PACKAGE QUANTITY SUPPLYING FORM
NESG250134-AZ NESG250134-AZ 3-pin power minimold
(Pb-Free) Note1
25 pcs (Non reel) • 12 mm wide embossed taping
• Pin 2 (Emitter) face the perforation side of the tape
NESG250134-T1-AZ NESG250134-T1-AZ 1 kpcs/reel
PARAMETER SYMBOL RATINGS UNIT
Collector to Base Voltage VCBO 20 V
Collector to Emitter Voltage VCEO 9.2 V
Emitter to Base Voltage VEBO 2.8 V
Collector Current IC500 mA
Total Power Dissipation Ptot Note 1.5 W
Junction Temperature Tj150 °C
Storage Temperature Tstg −65 to +150 °C
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
Note 1. Contains lead in the part except the electrode terminals.
NESG250134 NESG250134
THERMAL RESISTANCE (TA = 25°C)
PARAMETER SYMBOL RATINGS UNIT
Thermal Resistance from Junction to Ambient Note Rthj-a 80 °C/W
Note Mounted on 34.2 cm2 × 0.8 mm (t) glass epoxy PWB
RECOMMENDED OPERATING RANGE (TA = 25°C)
PARAMETER SYMBOL MIN. TYP. MAX. UNIT
Collector to Emitter Voltage VCE −3.6 4.5 V
Collector Current IC−400 500 mA
Input Power Note Pin −12 17 dBm
Note Input power under conditions of VCE ≤ 4.5 V, f = 460 MHz
Notes 1. Pulse measurement: PW ≤ 350 μs, Duty Cycle ≤ 2%
2. MSG = S21
S12
hFE CLASSIFICATION
NESG250134 NESG250134
ELECTRICAL CHARACHTERISTICS (TA = 25°C)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
DC Characteristics
Collector Cut-off Current ICBO VCB = 5 V, IE = 0 mA − − 1μA
Emitter Cut-off Current IEBO VEB = 0.5 V, IC = 0 mA − − 1μA
DC Current Gain hFE Note 1 VCE = 3 V, IC = 100 mA 80 120 180 −
RF Characteristics
Gain Bandwidth Product fTVCE = 3.6 V, IC = 100 mA, f = 460 MHz −10 −GHz
Insertion Power Gain |S21e|2VCE = 3.6 V, IC = 100 mA, f = 460 MHz −19 −dB
Maximum Stable Gain MSG Note 2 VCE = 3.6 V, IC = 100 mA, f = 460 MHz −23 −dB
Linear gain (1) GL
VCE = 3.6 V, IC (set) = 30 mA (RF OFF),
f = 460 MHz, Pin = 0 dBm 16 19 −dB
Linear gain (2) GL
VCE = 3.6 V, IC (set) = 30 mA (RF OFF),
f = 900 MHz, Pin = 0 dBm −16 −dB
Output Power (1) Po VCE = 3.6 V, IC (set) = 30 mA (RF OFF),
f = 460 MHz, Pin = 15 dBm 27 29 −dBm
Output Power (2) Po VCE = 3.6 V, IC (set) = 30 mA (RF OFF),
f = 900 MHz, Pin = 20 dBm −29 −dBm
Collector Efficiency (1) ηc
VCE = 3.6 V, IC (set) = 30 mA (RF OFF),
f = 460 MHz, Pin = 15 dBm −60 −%
Collector Efficiency (2) ηc
VCE = 3.6 V, IC (set) = 30 mA (RF OFF),
f = 900 MHz, Pin = 20 dBm −60 −%
RANK FB
Marking SN
hFE Value 80 to 180
NESG250134 NESG250134
TYPICAL CHARACHTERISTICS (TA = +25°C, unless otherwise specified )
1.6
1.2
1.0
0.6
0.2
0 2 4 6 8 10
f = 1 MHz
1.4
0.8
0.4
VCE = 3 V
100
10
1
0.01
0.001
0.1
0.0001 0.70.5 0.60.4 0.8 0.9 1.0
1,000 VCE = 4 V
100
10
1
0.01
0.001
0.1
0.0001 0.70.5 0.60.4 0.8 0.9 1.0
1,000
200
500
300
100
021 3 5
IB = 1 mA
4 mA
6 mA
2 mA
10 mA
3 mA
5 mA
8 mA
9 mA
7 mA
400
4
Reverse Transfer Capacitance Cre (pF)
Collector to Base Voltage VCB (V)
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
Collector Current IC (mA)
Base to Emitter Voltage VBE (V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
Collector Current IC (mA)
Base to Emitter Voltage VBE (V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
Collector Current IC (mA)
Collector to Emitter Voltage VCE (V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
Total Power Dissipation Ptot (mW)
Ambient Temperature TA (ºC)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
2.0
1.6
1.5
1.2
0.8
0.4
025 50 75 100 125 150
Nature Neglect
Mounted on Glass epoxy PWB
(34.2 cm2 × 0.8 mm (t) )
Remark The graphs indicate nominal characteristics.
NESG250134 NESG250134
1,000
100
10 10010 1,000
VCE = 3 V
1,000
100
10 10010 1,000
VCE = 4 V
20
16
12
8
4
0
10 100 1,000
VCE = 3 V
f = 460 MHz
20
16
12
8
4
0
10 100 1,000
VCE = 3.6 V
f = 460 MHz
20
16
12
8
4
0
10 100 1,000
VCE = 4 V
f = 460 MHz
VCE = 3 V
IC = 100 mA
40
30
25
20
15
10
5
0
0.1 1 10
MAG
MSG
|S21e|2
35
DC Current Gain hFE
Collector Current IC (mA)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
DC Current Gain hFE
Collector Current IC (mA)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
Gain Bandwidth Product fT (GHz)
Collector Current IC (mA)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
Gain Bandwidth Product fT (GHz)
Collector Current IC (mA)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
Gain Bandwidth Product fT (GHz)
Collector Current IC (mA)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
Frequency f (GHz)
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Remark The graphs indicate nominal characteristics.
NESG250134 NESG250134
VCE = 3 V
f = 460 MHz
30
25
15
10
0
10 100 1,000
MAG
MSG
|S21e|2
20
5
VCE = 3 V
f = 900 MHz
25
20
10
5
-5
10 100 1,000
|S21e|2
15
0
VCE = 3.6 V
f = 460 MHz
30
25
15
10
0
10 100 1,000
|S21e|2
20
5
VCE = 3.6 V
f = 900 MHz
25
20
10
5
-5
10 100 1,000
|S21e|2
15
0
MAG
MSG
VCE = 3.6 V
IC = 100 mA
40
30
25
20
15
10
5
0
0.1 1 10
MAG
MSG
|S21e|2
35
40
30
25
20
15
10
5
0
0.1 1 10
|S21e|2
VCE = 4 V
IC = 100 mA
35
MAG
MSG
MAG
MSG
MAG
MSG
Frequency f (GHz)
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Frequency f (GHz)
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Collector Current IC (mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Collector Current IC (mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Collector Current IC (mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Collector Current IC (mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Remark The graphs indicate nominal characteristics.
NESG250134 NESG250134
VCE = 4 V
f = 460 MHz
30
25
15
10
0
10 100 1,000
|S21e|2
20
5
VCE = 4 V
f = 900 MHz
25
20
10
5
-5
10 100 1,000
|S21e|2
15
0
MAG
MSG
MAG
MSG
5
4
3
2
1
0
25
10
5
20
15
0
10 100 1,000
VCE = 3.6 V
f = 460 MHz
Ga
NF
Collector Current IC (mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Collector Current IC (mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Collector Current IC (mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
Noise Figure NF (dB)
Associated Gain Ga (dB)
VCE = 3.6 V, f = 460 MHz
IC (set) = 30 mA
GP
Pout
IC
C
η
30
25
20
15
10
5
0
600
100
200
300
500
400
0
-10 50-5 10 15 20
VCE = 3.6 V, f = 900 MHz
IC (set) = 30 mA
GP
Pout
IC
C
η
30
25
20
15
10
5
0
600
100
200
300
500
400
0
-10 50-5 10 15 20
Input Power Pin (dBm)
OUTPUT POWER, POWER GAIN,
COLLECTOR CURRENT, COLLECTOR
EFFICIENCY vs. INPUT POWER
Output Power Pout (dBm), Power Gain GP (dB)
Collector Current IC (mA), Collector Efficiency C (%)
η
Input Power Pin (dBm)
OUTPUT POWER, POWER GAIN,
COLLECTOR CURRENT, COLLECTOR
EFFICIENCY vs. INPUT POWER
Output Power Pout (dBm), Power Gain GP (dB)
Collector Current IC (mA), Collector Efficiency C (%)
η
Remark The graphs indicate nominal characteristics.
NESG250134
PA EVALUATION BOARD (f = 460 MHz)
GND VbVCGND
SN
SN
C1
C2
C3 C4 C5 C6
L1 L2
C8
C7
C9 R1 C10
RF IN RF OUT
Notes
1. 38 × 90 mm, t = 0.8 mm double sided copper clad glass epoxy PWB.
2. Back side: GND pattern
3. Solder gold plated on pattern
4. : Through holes
PA EVALUATION CIRCUIT (f = 460 MHz)
RF IN
C1
C2 C3 C4 C5
VBE
C9
L1
RF OUT
C6 C7
C8
VCE
L2
R1
C10
The application circuits and their parameters are for reference only and are not intended for use in actual design-ins.
NESG250134
VALUE MAKER
C1 30 pF Murata
C2 6 pF Murata
C3, C4 7 pF Murata
C5 3 pF Murata
C6 0.5 pF Murata
C7 5 pF Murata
C8 10 pF Murata
C9, C10 100 nF Murata
L1 100 nH Toko
L2 3 nH Toko
R1 30 ΩSSM
COMPONENT LIST
PA EVALUATION CIRCUIT TYPICAL CHARACTERISTICS
Remark The graphs indicate nominal characteristics.
VCE = 3.6 V, f = 460 MHz
IC (set) = 40 mA
GP
Pout
IC
C
η
30
25
20
15
10
5
0
600
100
200
300
500
400
0
-10 50-5 10 15 20
Input Power Pin (dBm)
OUTPUT POWER, POWER GAIN,
COLLECTOR CURRENT, COLLECTOR
EFFICIENCY vs. INPUT POWER
Output Power Pout (dBm), Power Gain GP (dB)
Collector Current IC (mA), Collector Efficiency C (%)
η
NESG250134
DISTORTION EVALUATION BOARD (f = 460 MHz)
GND VbVCGND
SN
SN
C1
C2 C4 C5 C6
L1 L2
C9
C8
C10 R1 C12
RF IN RF OUT
C3 C7
C11
Notes
1. 38 × 90 mm, t = 0.8 mm, double sided copper clad glass epoxy
PWB.
2. Back side: GND pattern
3. Solder gold plated on pattern
4. : Through holes
DISTORTION EVALUATION CIRCUIT (f = 460 MHz)
RF IN
C1
C2 C3 C4 C5
VBE
C10
L1
RF OUT
C6 C8
C9
VCE
L2
R1
C12
C7
C11
The application circuits and their parameters are for reference only and are not intended for use in actual design-ins.
NESG250134
COMPONENT LIST
DISTORTION EVALUATION CIRCUIT TYPICAL CHARACTERISTICS
Remark The graphs indicate nominal characteristics.
VALUE MAKER
C1 47 pF Murata
C2 12 pF Murata
C3, C4 7 pF Murata
C5 3 pF Murata
C6 6 pF Murata
C7 0.5 pF Murata
C8 5 pF Murata
C9 51 pF Murata
C10, C12 100 nF Murata
C11 1 μF Murata
L1 100 nH Toko
L2 15 nH Toko
R1 30 ΩSSM
80
60
40
20
0
70
50
30
10
-5 0 5 10 15 20 25
3rd Order Intermodulation Distortion IM3 (dBc)
1 tone Output Power Pout (dBm)
3RD ORDER
INTERMODULATION DISTORTION
vs. 1 TONE OUTPUT POWER
VCE = 3.6 V, f = 460 MHz,
IC (set) = 30 mA, offset = 1 MHz
NESG250134
3-PIN POWER MINIMOLD (34 PACKAGE) (UNIT:mm)
PIN CONNECTIONS
1. Collector
2. Emitter
3. Base
1.5±0.1
0.41+0.03
-0.06
4.5±0.1
0.42±0.060.42±0.06
1.6±0.2
3.0
1.5
2
1 3
2.5±0.1
4.0±0.25
0.8 MIN.
0.47±0.06
Life Support Applications
These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably
be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and
agree to fully indemnify CEL for all damages resulting from such improper use or sale.
A Business Partner of NEC Compound Semiconductor Devices, Ltd.
03/07/2005
4590 Patrick Henry Drive
Santa Clara, CA 95054-1817
Telephone: (408) 919-2500
Facsimile:
(
408
)
988-0279
Subject: Compliance with EU Directives
CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant
with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous
Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive
2003/11/EC Restriction on Penta and Octa BDE.
CEL Pb-free products have the same base part number with a suffix added. The suffix –A indicates
that the device is Pb-free. The –AZ suffix is used to designate devices containing Pb which are
exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals.
All devices with these suffixes meet the requirements of the RoHS directive.
This status is based on CEL’s understanding of the EU Directives and knowledge of the materials that
go into its products as of the date of disclosure of this information.
Restricted Substance
per RoHS
Concentration Limit per RoHS
(values are not yet fixed)
Concentration contained
in CEL devices
-A -AZ
Lead (Pb) < 1000 PPM Not Detected (*)
Mercury < 1000 PPM Not Detected
Cadmium < 100 PPM Not Detected
Hexavalent Chromium < 1000 PPM Not Detected
PBB < 1000 PPM Not Detected
PBDE < 1000 PPM Not Detected
If you should have any additional questions regarding our devices and compliance to environmental
standards, please do not hesitate to contact your local representative.
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