NTE2349 (NPN) & NTE2350 (PNP)
Silicon Darlington Transistors
High Current, General Purpose
Description:
The NTE2349 (NPN) and NTE2350 (PNP) are silicon complementary Darlington transistors in a TO3
type package designed for use as output devices in general purpose amplifier applications.
Features:
DHigh DC Current Gain: hFE = 1000 (Min) @ IC = 25A
hFE = 400 (Min) @ IC = 50A
DDiode Protection to Rated IC
DMonolithic Construction w/Built–In Base–Emitter Shunt Resistor
DJunction Temperature to +200°C
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO 120V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Base Voltage, VCB 120V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Base Voltage, VEB 5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, IC
Continuous 50A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak 100A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous Base Current, IB2A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (TC = +25°C), PD300W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25°C @ TC = +100°C 1.71W/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, TJ–55° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, Tstg –55° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction–to–Case, RthJC 0.584°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (During Soldering, 10sec Max), TL+275°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Collector–Emitter Breakdown Voltage V(BR)CEO IC = 100mA, IB = 0 120 – – V
Collector–Emitter Leakage Current ICER VCE = 120V, RBE = 1kΩ– – 2 mA
VCE = 120V, RBE = 1kΩ, TC = +150°C – – 10 mA
ICEO VCE = 50V, IB = 0 – – 2 mA
Emitter Cutoff Current IEBO VBE = 5V, IC = 0 – – 2 mA
Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
ON Characteristics (Note 1)
DC Current Gain hFE IC = 25A, VCE = 5V 1000 –18000
IC = 50A, VCE = 5V 400 – –
Collector–Emitter Saturation Voltage VCE(sat) IC = 25A , IB = 250mA – – 2.5 V
IC = 50A, I B = 500mA – – 3.5 V
Base–Emitter Saturation Voltage VBE(sat) IC = 25A, IB = 200mA – – 3.0 V
IC = 50A, I B = 300mA – – 4.5 V
Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
Schematic Diagram
NPN PNP
B
C
E
B
C
E
1.187
(30.16)
.875 (22.2)
Dia Max
.665
(16.9)
.430
(10.92)
Seating
Plane
.061 (1.55) Max.312 (7.93) Min
.135 (3.45) Max
.350 (8.89)
Emitter
Collector/CaseBase
.215 (5.45)
.525 (13.35) R Max
.156 (3.96) Dia
(2 Holes)
.188 (4.8) R Max
