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NXP Semiconductors
BLF147
VHF power MOS transistor
Rev. 06 — 5 December 2006 Product data sheet
NXP Semiconductors Product specification
VHF power MOS transistor BLF147
FEATURES
•High power gain
•Low intermodulation distortion
•Easy power control
•Good thermal stability
•Withstands full load mismatch.
APPLICATIONS
•Industrial and military applications in the HF/VHF
frequency range.
DESCRIPTION
Silicon N-channel enhancement mode vertical D-MOS
transistor encapsulated in a 4-lead, SOT121B flange
packagewithaceramiccap.Allleadsareisolatedfromthe
flange. A marking code, showing gate-source voltage
(VGS) information is provided for matched pair
applications. Refer to the “General” section of the
handbook for further information.
PINNING - SOT121B
CAUTION
This product is supplied in anti-static packing to prevent
damage caused by electrostatic discharge during
transport and handling. For further information, refer to
Philips specs.: SNW-EQ-608, SNW-FQ-302A, and
SNW-FQ-302B.
PIN DESCRIPTION
1 drain
2 source
3 gate
4 source
Fig.1 Simplified outline and symbol.
handbook, halfpage
s
d
g
MAM267
14
32
QUICK REFERENCE DATA
RF performance at Th = 25 °C in a common source test circuit.
MODE OF
OPERATION f
(MHz) VDS
(V) PL
(W) Gp
(dB) ηD
(%) d3
(dB) d5
(dB)
SSB, class-AB 28 28 150 (PEP) >17 >35 <−30 <−30
CW, class-B 108 28 150 typ. 14 typ. 70 −−
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
Rev. 06 - 5 December 2006
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NXP Semiconductors Product specification
VHF power MOS transistor BLF147
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDS drain-source voltage −65 V
VGS gate-source voltage −±20 V
IDdrain current (DC) −25 A
Ptot total power dissipation Tmb ≤25 °C−220 W
Tstg storage temperature −65 150 °C
Tjjunction temperature −200 °C
SYMBOL PARAMETER VALUE UNIT
Rth j-mb thermal resistance from junction to mounting base 0.8 K/W
Rth mb-h thermal resistance from mounting base to heatsink 0.2 K/W
Fig.2 DC SOAR.
(1) Current is this area may be limited by RDSon.
(2) Tmb =25°C.
handbook, halfpage
1
10
102
110
V
DS (V)
ID
(A)
102
(1)
MRA904
(2)
Fig.3 Power derating curves.
(1) Short-time operation during mismatch.
(2) Continuous operation.
handbook, halfpage
0
300
200
100
050 100 150
MGP049
Ptot
(W)
Th (°C)
(1)
(2)
Rev. 06 - 5 December 2006
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NXP Semiconductors Product specification
VHF power MOS transistor BLF147
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V(BR)DSS drain-source breakdown voltage ID= 100 mA; VGS =0 65 −−V
I
DSS drain-source leakage current VGS = 0; VDS =28V −−5mA
I
GSS gate-source leakage current VGS =±20 V; VDS =0 −−1µA
V
GSth gate-source threshold voltage ID= 200 mA; VDS =10V 2 −4.5 V
∆VGS gate-source voltage difference of
matched pairs ID= 100 mA; VDS =10V −−100 mV
gfs forward transconductance ID= 8 A; VDS =10V 5 7.5 −S
R
DSon drain-source on-state resistance ID= 8 A; VGS =10V −0.1 0.15 Ω
IDSX on-state drain current VGS = 10 V; VDS =10V −37 −A
Cis input capacitance VGS = 0; VDS =28V; f=1MHz −450 −pF
Cos output capacitance VGS = 0; VDS =28V; f=1MHz −360 −pF
Crs feedback capacitance VGS = 0; VDS =28V; f=1MHz −55 −pF
VGS group indicator
GROUP LIMITS
(V) GROUP LIMITS
(V)
MIN. MAX. MIN. MAX.
A 2.0 2.1 O 3.3 3.4
B 2.1 2.2 P 3.4 3.5
C 2.2 2.3 Q 3.5 3.6
D 2.3 2.4 R 3.6 3.7
E 2.4 2.5 S 3.7 3.8
F 2.5 2.6 T 3.8 3.9
G 2.6 2.7 U 3.9 4.0
H 2.7 2.8 V 4.0 4.1
J 2.8 2.9 W 4.1 4.2
K 2.9 3.0 X 4.2 4.3
L 3.0 3.1 Y 4.3 4.4
M 3.1 3.2 Z 4.4 4.5
N 3.2 3.3
Rev. 06 - 5 December 2006
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NXP Semiconductors Product specification
VHF power MOS transistor BLF147
Fig.4 Temperature coefficient of gate-source
voltageasafunctionof draincurrent; typical
values.
VDS = 28 V; valid for Th=25to70°C.
handbook, halfpage
0
−5
MGP050
10−111010−2
−4
−3
−2
−1
T.C.
(mV/K)
ID (A)
Fig.5 Drain current as a function of gate-source
voltage; typical values.
VDS =10V.
handbook, halfpage
0
60
40
20
0510 2015
MGP051
VGS (V)
ID
(A)
Fig.6 Drain-source on-state resistance as a
function of junction temperature; typical
values.
ID= 8 A; VGS =10V.
handbook, halfpage
0 50 100 150
170
150
110
90
130
MGP052
RDSon
(mΩ)
Tj ( C)
Fig.7 Input and output capacitance as functions
of drain-source voltage; typical values.
VGS = 0; f = 1 MHz.
handbook, halfpage
0
400
800
1200
1400
01020 V
DS (V)
C
(pF)
Cis
Cos
30 40
MRA903
Rev. 06 - 5 December 2006
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NXP Semiconductors Product specification
VHF power MOS transistor BLF147
Fig.8 Feedback capacitance as a function of
drain-source voltage; typical values.
VGS = 0; f = 1 MHz.
handbook, halfpage
0
100
200
300
400
500
01020
C
rs
(pF)
30 VDS (V) 40
MRA902
APPLICATION INFORMATION FOR CLASS-AB OPERATION
RF performance in SSB operation in a common source class-AB circuit.
Th=25°C; Rth mb-h = 0.2 K/W; RGS = 9.8 Ω; f1= 28.000 MHz; f2= 28.001 MHz; unless otherwise specified.
Notes
1. Optimum load impedance: 2.1 + j0 Ω.
2. Maximum values at drive levels within the specified PEP values for either amplified tone. For the peak envelope
power the values should be decreased by 6 dB.
Ruggedness in class-AB operation
The BLF147 is capable of withstanding a load mismatch corresponding to VSWR = 50:1 through all phases under the
following conditions: VDS = 28 V; f = 28 MHz at rated load power.
PL
(W) f
(MHz) VDS
(V) IDQ
(A) Gp
(dB) ηD
(%)
d3
(dB)
(note 2)
d5
(dB)
(note 2)
20 to 150 (PEP) 28 28 1 >17
typ. 19 >35
typ. 40 <−30
typ. −34 <−30
typ. −40
Rev. 06 - 5 December 2006
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NXP Semiconductors Product specification
VHF power MOS transistor BLF147
Fig.9 Power gain as a function of load power;
typical values.
Class-AB operation; VDS = 28 V; IDQ = 1 A;
RGS = 9.8 Ω; f1= 28.000 MHz; f2= 28.001 MHz.
handbook, halfpage
0 200
30
10
MGP053
20
100 PL (W) PEP
Gp
(dB)
Fig.10 Efficiency as a function of load power;
typical values.
Class-AB operation; VDS = 28 V; IDQ =1A;
R
GS = 9.8 Ω; f1= 28.000 MHz; f2= 28.001 MHz.
handbook, halfpage
0
60
40
20
0100 200
MGP054
ηD
(%)
PL (W) PEP
Fig.11 Third order intermodulation distortion as a
function of load power; typical values.
Class-AB operation; VDS = 28 V; IDQ =1A;
R
GS = 9.8 Ω; f1= 28.000 MHz; f2= 28.001 MHz.
handbook, halfpage
0
−20
−30
−40
−50
−60 100 200
MGP055
d3
(dB)
PL (W) PEP
Fig.12 Fifth order intermodulation distortion as a
function of load power; typical values.
Class-AB operation; VDS = 28 V; IDQ =1A;
R
GS = 9.8 Ω; f1= 28.000 MHz; f2= 28.001 MHz.
handbook, halfpage
0
−20
−30
−40
−60
−50
100 200
MGP056
d5
(dB)
PL (W) PEP
Rev. 06 - 5 December 2006
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NXP Semiconductors Product specification
VHF power MOS transistor BLF147
Fig.13 Test circuit for class-AB operation.
f = 28 MHz.
handbook, full pagewidth
MGP057
input
50 Ω
C1
C4
C5
C7
L1 L2 D.U.T. L3 L7
L4
R2R1
R3R4
C3
+VG
C2
C13
C9
C8
C11
C10 C12
C15
+VD
C14
L6L5
R5 C6
output
50 Ω
Rev. 06 - 5 December 2006
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NXP Semiconductors Product specification
VHF power MOS transistor BLF147
List of components (see Fig 13).
Notes
1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality.
2. The striplines are on a double copper-clad printed circuit board, with PTFE fibre-glass dielectric (εr= 2.2),
thickness 1.6 mm.
COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.
C1, C3, C13, C14 film dielectric trimmer 7 to 100 pF 2222 809 07015
C2, C8, C9 multilayer ceramic chip capacitor;
note 1 75 pF
C4, C5 multilayer ceramic chip capacitor 100 nF 2222 852 47104
C6 multilayer ceramic chip capacitors in
parallel 3×100 nF 2222 852 47104
C7 electrolytic capacitor 2.2 µF, 63 V
C10 multilayer ceramic chip capacitor;
note 1 100 pF
C11, C12 multilayer ceramic chip capacitor;
note 1 150 pF
C15 multilayer ceramic chip capacitor;
note 1 240 pF
L1 6 turns enamelled 0.7 mm copper
wire 145 nH length 5 mm;
int. dia. 6 mm;
leads 2 ×5mm
L2, L3 stripline; note 2 41.1 Ωlength 13 ×6mm
L4 4 turns enamelled 1.5 mm copper
wire 148 nH length 8 mm;
int. dia. 10 mm;
leads 2 ×5mm
L5, L6 grade 3B Ferroxcube wideband HF
choke 4312 020 36642
L7 3 turns enamelled 2.2 mm copper
wire 79 nH length 8 mm;
int. dia. 8 mm;
leads 2 ×5mm
R1, R2 1 W metal film resistor 19.6 Ω2322 153 51969
R3 0.4 W metal film resistor 10 kΩ2322 151 71003
R4 0.4 W metal film resistor 1 MΩ2322 151 71005
R5 1 W metal film resistor 10 Ω2322 153 51009
Rev. 06 - 5 December 2006
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NXP Semiconductors Product specification
VHF power MOS transistor BLF147
Fig.14 Power gain as a function of frequency;
typical values.
Class-AB operation; VDS = 28 V; IDQ =1A;
R
GS = 6.25 Ω; PL= 150 W (PEP); RL= 2.1 Ω.
handbook, halfpage
0
30
20
10
010 20 30
MGP058
GP
(dB)
f (MHz)
Fig.15 Input impedance as a function of frequency
(series components); typical values.
Class-AB operation; VDS = 28 V; IDQ =1A;
R
GS = 6.25 Ω; PL= 150 W (PEP); RL= 2.1 Ω.
handbook, halfpage
0
10
5
0
−510 20
xi
ri
30
MGP059
Zi
(Ω)
f (MHz)
Fig.16 Input impedance as a function of frequency
(series components); typical values.
Class-B operation; VDS =28V;I
DQ = 0.2 A;
RGS =15Ω; PL= 150 W.
handbook, halfpage
0 50 100 200
4
2
−2
−4
0
150
ri
xi
MGP061
Zi
(Ω)
f (MHz)
Fig.17 Load impedance as a function of frequency
(series components); typical values.
Class-B operation; VDS = 28 V; IDQ = 0.2 A;
RGS =15Ω; PL= 150 W.
handbook, halfpage
0 50 100 200
3
2
0
−1
1
150
RL
XL
MGP062
ZL
(Ω)
f (MHz)
Rev. 06 - 5 December 2006
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NXP Semiconductors Product specification
VHF power MOS transistor BLF147
Fig.18 Power gain as a function of frequency;
typical values.
Class-B operation; VDS = 28 V; IDQ = 0.2 A;
RGS =15Ω; PL= 150 W.
handbook, halfpage
0
30
20
10
050 100 200150
MGP060
f (MHz)
Gp
(dB)
Rev. 06 - 5 December 2006
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NXP Semiconductors Product specification
VHF power MOS transistor BLF147
BLF147 scattering parameters
VDS = 28 V; ID= 1000 mA; note 1
Note
1. For more extensive S-parameters see internet:
http://www.semiconductors.philips.com/markets/communications/wirelesscommunications/broadcast.
f (MHz) s11 s21 s12 s22
|s11|∠Φ |s21|∠Φ |s12|∠Φ |s22|∠Φ
5 0.91 −170.00 23.90 93.40 0.01 5.80 0.88 −171.20
10 0.91 −174.60 12.25 89.40 0.01 3.60 0.89 −177.20
20 0.92 −177.40 5.94 81.00 0.01 5.40 0.83 −179.60
30 0.92 −178.40 3.87 79.10 0.01 8.90 0.86 −178.90
40 0.92 −178.80 2.84 75.70 0.01 12.00 0.85 −178.60
50 0.92 −178.80 2.26 73.30 0.01 16.90 0.87 −176.90
60 0.92 −179.00 1.88 69.80 0.01 20.30 0.90 −177.30
70 0.93 −179.20 1.58 66.20 0.01 24.00 0.90 −178.10
80 0.93 −179.60 1.36 63.20 0.01 28.80 0.90 −178.40
90 0.93 −179.70 1.19 60.40 0.01 34.20 0.90 −178.60
100 0.94 −179.70 1.05 57.00 0.01 39.30 0.90 −179.40
125 0.95 179.50 0.77 49.30 0.01 52.30 0.88 179.20
150 0.95 179.00 0.60 45.80 0.01 64.90 0.91 −179.50
175 0.96 178.10 0.49 41.50 0.02 72.40 0.95 179.80
200 0.96 177.50 0.40 36.80 0.02 75.80 0.94 177.70
250 0.97 175.80 0.28 33.20 0.03 82.30 0.95 176.20
300 0.98 174.20 0.22 30.10 0.03 83.00 0.96 173.60
350 0.98 172.70 0.17 31.00 0.04 85.00 0.97 171.90
400 0.98 171.10 0.14 32.40 0.05 84.90 0.97 169.50
450 0.98 169.50 0.12 36.10 0.05 85.90 0.97 167.70
500 0.98 167.90 0.11 39.90 0.06 84.30 0.98 165.50
600 0.98 164.80 0.10 50.20 0.07 83.20 0.97 161.50
700 0.98 161.60 0.10 57.90 0.09 81.70 0.97 157.50
800 0.98 158.20 0.11 63.70 0.10 81.00 0.97 153.50
900 0.97 154.60 0.13 67.20 0.12 79.50 0.97 149.30
1000 0.97 151.10 0.14 70.20 0.14 78.80 0.96 144.90
Rev. 06 - 5 December 2006
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NXP Semiconductors Product specification
VHF power MOS transistor BLF147
PACKAGE OUTLINE
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
SOT121B 99-03-29
0 5 10 mm
scale
Flanged ceramic package; 2 mounting holes; 4 leads SOT121B
12
43
U
3
D
1
U
2
H
H
b
Q
D
U
1
q
A
F
c
p
w
1
MMM
MM
w
2
B
C
C
A
AB
α
0.25
UNIT A
mm
Db
5.82
5.56 0.16
0.10 12.86
12.59 12.83
12.57 28.45
25.52 3.30
3.05 6.48
6.22
7.27
6.17
cD1U3
U2
12.32
12.06 0.51
w1w2
45°
αU1
24.90
24.63
Q
4.45
3.91
q
18.42
F
2.67
2.41
0.01
inches 0.229
0.219 0.006
0.004 0.506
0.496 0.505
0.495 1.120
1.005 0.130
0.120 0.255
0.245
0.286
0.243 0.485
0.475 0.02
0.98
0.97
0.175
0.154 0.725
0.105
0.095
pH
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
Rev. 06 - 5 December 2006
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NXP Semiconductors BLF147
VHF power MOS transistor
Legal information
Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of a NXP Semiconductors product can reasonably be expected to
result in personal injury, death or severe property or environmental damage.
NXP Semiconductors accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or applications and therefore
such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Contact information
For additional information, please visit: http://www.nxp.com
For sales office addresses, send an email to: salesaddresses@nxp.com
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.
Rev. 06 - 5 December 2006
14 of 15
NXP Semiconductors BLF147
VHF power MOS transistor
© NXP B.V. 2006. All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 5 December 2006
Document identifier: BLF147_6
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
Revision history
Revision history
Document ID Release date Data sheet status Change notice Supersedes
BLF147_6 20061205 Product data sheet - BLF147_5
Modifications: •Correction made to page 9 “List of components”
BLF147_5 20061108 Product data sheet - BLF147_4
BLF147_4
(9397 750 11593) 20030901 Product specification - BLF147_3
BLF147_3
(9397 750 08411) 20010523 Product specification - BLF147_CNV_2
BLF147_CNV_2
(9397 750 xxxxx) 19971215 Product specification - -
Rev. 06 - 5 December 2006
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