PolarHTTM HiPerFET IXFN 140N20P Power MOSFET VDSS = 200 V ID25 = 115 A RDS(on) 18 m 150 ns trr N-Channel Enhancement Mode Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 175C 200 V VDGR TJ = 25C to 175C; RGS = 1 M 200 V VGS Continuous 20 V VGSM Transient 30 V ID25 TC = 25C 115 A ID(RMS) External lead current limit 100 A IDM TC = 25C, pulse width limited by TJM 280 A IAR TC = 25C 60 A miniBLOC, SOT-227 B (IXFN) E153432 S G S D EAR TC = 25C 100 mJ EAS TC = 25C 4 J dv/dt IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150C, RG = 4 10 V/ns PD TC = 25C 680 W -55 ... +175 175 -55 ... +150 C C C Features 300 C z 2500 V~ z 1.13/10 Nm/lb.in. 1.13/10 Nm/lb.in. z TJ TJM Tstg TL 1.6 mm (0.062 in.) from case for 10 s VISOL 50/60 Hz, RMS, 1 minute Md Terminal torque Mounting torque Weight 30 Symbol Test Conditions (TJ = 25C, unless otherwise specified) g Characteristic Values Min. Typ. Max. BVDSS VGS = 0 V, ID = 250 A 200 VGS(th) VDS = VGS, ID = 4 mA 2.5 IGSS VGS = 20 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V V G = Gate S = Source Either source tab S can be used forsource current or Kelvin gate return. z RDS(on) TJ = 150C VGS = 10 V, ID = 70 A VGS = 15 V, ID = 140A Pulse test, t 300 s, duty cycle d 2 % 14 V 100 nA 25 250 A A 18 m m International standard package Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic diode Advantages z z z 5.0 D = Drain Easy to mount Space savings High power density DS99245E(03/06) (c) 2006 IXYS All rights reserved http://store.iiic.cc/ IXFN 140N20P Symbol Test Conditions gfs VDS= 10 V; ID = 70 A Characteristic Values (TJ = 25C, unless otherwise specified) Min. Typ. Max. 50 Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 84 S 7500 pF 1630 pF 280 pF Crss td(on) tr VGS = 10 V, VDS = 0.5 VDSS, ID = 70 A td(off) RG = 3.3 (External) 30 ns 35 ns 150 ns 90 ns 240 nC 50 nC 110 nC tf Qg(on) Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = 70 A Qgd RthJC SOT-227B miniBLOC 0.22 K/W RthCS 0.05 Source-Drain Diode K/W Characteristic Values (TJ = 25C, unless otherwise specified) Min. Typ. Max. Symbol Test Conditions IS VGS = 0 V 140 A ISM Repetitive 280 A VSD IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % 1.5 V trr QRM IRM IF = 25 A -di/dt = 100 A/s VR = 100 V 0.6 6 200 ns C A IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 http://store.iiic.cc/ 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6,771,478 B2 IXFN 140N20P Fig. 1. Output Characte r is tics @ 25C Fig. 2. Exte nde d Output Characte r is tics @ 25C 300 140 V GS = 10V 9V 8V 120 9V 240 100 210 I D - Amperes I D - Amperes V GS = 10V 270 80 7V 60 40 6V 8V 180 150 120 7V 90 60 20 6V 30 5V 0 0 0 0.5 1 1.5 2 0 2.5 1 2 3 4 5 6 7 8 9 10 V D S - V olts V D S - V olts Fig. 3. Output Characte r is tics @ 150C Fig. 4. RDS(on ) Norm alize d to ID = 70A V alue vs . Junction Te m pe r atur e 140 V GS = 10V 9V 8V 3 R D S ( o n ) - Normalized 120 I D - Amperes 100 7V 80 60 6V 40 20 V GS = 10V 2.5 I D = 140A 2 I D = 70A 1.5 1 5V 0 0.5 0 1 2 3 4 5 6 -50 -25 0 V D S - V olts 50 75 100 125 150 175 150 175 Fig . 6. Dr ain Cur r e n t vs . Cas e T e m p e r atu r e Fig. 5. RDS(on) Nor m alize d to ID = 70A V alue vs . Dr ain Cur re nt 80 4 TJ = 175 C 70 3.5 60 3 2.5 I D - Amperes R D S ( o n ) - Normalized 25 TJ - Degrees Centigrade V GS = 10V V GS = 15V 2 1.5 50 40 30 20 1 10 TJ = 25 C 0 0.5 0 50 100 150 200 250 300 I D - A mperes (c) 2006 IXYS All rights reserved http://store.iiic.cc/ -50 -25 0 25 50 75 100 125 TC - Degrees Centigrade IXFN 140N20P Fig. 8. Trans conductance Fig. 7. Input Adm ittance 225 120 110 200 100 90 80 - Siemens 150 125 60 fs 100 70 25 C 40 150 C TJ = 150 C 50 25 C 30 -40 C 20 25 TJ = -40 C 50 75 g I D - Amperes 175 10 0 0 4 4.5 5 5.5 6 6.5 7 7.5 8 0 40 80 V G S - V olts Fig. 9. Sour ce Cur re nt vs . Source -To-Drain V oltage 160 200 240 Fig. 10. Gate Char ge 10 350 V DS = 100V 9 300 I D = 70A 8 250 I G = 10m A 7 V G S - Volts I S - Amperes 120 I D - A mperes 200 150 6 5 4 3 100 TJ = 150 C 2 50 TJ = 25 C 1 0 0 0.4 0.6 0.8 1 1.2 0 1.4 25 50 75 V S D - V olts Q 100 125 150 175 200 225 250 G - nanoCoulombs Fig. 12. For w ar d-Bias Safe Ope r ating Ar e a Fig. 11. Capacitance 100,000 1000 25s R DS (on) Lim it Ciss 10,000 I D - Amperes Capacitance - picoFarads f = 1M Hz Cos s 1,000 100 100s 1m s 10m s 10 Crs s DC TJ = 175 C TC = 25 C 100 1 0 5 10 15 20 25 30 35 40 V DS - V olts 1 10 100 V D S - V olts IXYS reserves the right to change limits, test conditions, and dimensions. http://store.iiic.cc/ 1000 IXFN 140N20P Fig. 13. M axim um Trans ie nt The rm al Re s is tance R( t h ) J C - C / W 1.000 0.100 0.010 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds (c) 2006 IXYS All rights reserved IXYS REF: T_140N20P (88) 01-23-06-B.xls http://store.iiic.cc/