CPH6530
No.8709-1/5
Applications
•Muting circuit, relay drivers, lamp drivers, motor drivers.
Features
•Composite type with a PNP / NPN transistor contained in one package, facilitating high-density mounting.
•Ultrasmall package permitting applied sets to be small and slim.
Specifications ( ) : PNP
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage VCBO (--15)60 V
Collector-to-Emitter Voltage VCEO (--12)50 V
Emitter-to-Base Voltage VEBO (--)5 V
Collector Current IC(--1)0.5 A
Collector Current (Pulse) ICP (--2)1 A
Collector Dissipation PCMounted on a ceramic board (600mm2✕0.8m) 1unit 0.6 W
Junction Temperature Tj 150 °C
Storage Temperature Tstg --55 to +150 °C
Electrical Characteristics at Ta=25°C
Ratings
Parameter Symbol Conditions min typ max Unit
Collector Cutoff Current ICBO VCB=(--12)40V, IE=0A (--)100 nA
Emitter Cutoff Current IEBO VEB=(--)4V, IC=0A (--)100 nA
DC Current Gain hFE VCE=(--)2V, IC=(--)10mA 300 (700)800
Gain-Bandwidth Product fTVCE=(--2)10V, IC=(--)50mA (450)500 MHz
Output Capacitance Cob VCB=(--)10V, f=1MHz (6)2.8 pF
Collector-to-Emitter Saturation Voltage VCE(sat) IC=(--400)100mA, IB=(--20)10mA (--120)50 (--240)100 mV
Base-to-Emitter Saturation Voltage VBE(sat) IC=(--400)100mA, IB=(--20)10mA (--)0.9 (--)1.2 V
Collector-to-Base Breakdown Voltage V(BR)CBO IC=(--)10µA, IE=0A (--15)60 V
Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=(--)1mA, RBE=∞(--12)50 V
Emitter-to-Base Breakdown Voltage V(BR)EBO IE=(--)10µA, IC=0A (--)5 V
Marking : EQ
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : EN8709
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
D2805EA MS IM TB-00001960
CPH6530 PNP / NPN Epitaxial Planar Silicon Transistor
Low-Frequency General-Purpose
Applications
CPH6530
No.8709-2/5
Package Dimensions Electrical Connection
unit : mm
7018-006
[PNP] [NPN]
Collector-to-Emitter Voltage, VCE -- mV
IC -- VCE
Collector Current, IC -- mA
0
0
--1000
--200
--100
--200
--300
--400
--500
--600
--700
--800
--900
--500 --1000--800 --900--100 --300 --400 --600 --700
IT05094
--20mA
--30mA
--15mA
--10mA
--7mA
--5mA
--3mA
--2mA
--1mA
--0.5mA
IB=0mA
[PNP] [NPN]
Base-to-Emitter Voltage, VBE -- V
IC -- VBE
Collector Current, IC -- mA
0
--400
--1200
--600
--800
--1000
--200
0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2
IT05095
VCE= --2V
25°C
--25°C
Ta=75°C
IC -- VCE
IT05106
IC -- VBE
IT05107
Collector-to-Emitter Voltage, VCE -- mV
Collector Current, IC -- mA
Base-to-Emitter Voltage, VBE -- V
Collector Current, IC -- mA
0
0
350
400
300
200
250
500
450
200
150
100
50
0
200
300
600
500
400
100
500 1000
800 900100 300 400 600 700
0 0.2 0.4 0.6 0.8 1.21.0
Ta=75
°
C
--25
°
C
25
°
C
VCE=2V
IB=0A
200µA
600µA
1mA
2mA
3mA
5mA
7mA
8mA
30mA
20mA 15mA
10mA
2.9
0.95
0.05
13
465
2
0.20.7 0.9 2.8
1.6
0.6 0.6
0.2
0.4 0.15
1 : Emitter1
2 : Base1
3 : Collector2
4 : Emitter2
5 : Base2
6 : Collector1
SANYO : CPH6
56
1
4
23
1 : Emitter1
2 : Base1
3 : Collector2
4 : Emitter2
5 : Base2
6 : Collector1
Top view
CPH6530
No.8709-3/5
[PNP] [NPN]
[PNP] [NPN]
[PNP] [NPN]
Collector Current, IC -- mA
hFE -- IC
DC Current Gain, hFE
Collector Current, IC -- mA
VCE(sat) -- IC
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
--1.0 23 57 23 57 23 57
--10 --100
2
3
5
7
100
1000
--100
--1000
--1.0
2
3
5
--10
7
2
3
5
7
2
3
5
7
--1000
IT05096
IT05097
--1.0 23 57
--10 23 57 23 57
--100 --1000
--25
°
C
Ta=75
°
C
VCE= --2V
IC / IB=20
Ta=75
°
C
25
°
C
--25
°
C
25
°
C
Collector Current, IC -- mA
IT05098
VCE(sat) -- IC
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
--1.0
--100
--1000
--10
23 57 23 57
--100 2--1000
357
--10
7
5
3
2
7
5
3
2
IC / IB=50
Ta=75
°
C
25°C
--25°C
[PNP] [NPN]
IT05099
Collector Current, IC -- mA
VBE(sat) -- IC
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
--1.0 357
--10
235723572
--100 --1000
--10
--1.0
--0.1
7
5
3
2
7
5
3
2
IC / IB=20
Ta= --25°C
25
°
C
75
°
C
hFE -- IC
IT05108
Collector Current, IC -- mA
DC Current Gain, hFE
1.0 10 100 1000
3257 3257 3257
1000
100
10
2
3
5
7
2
3
5
7
VCE=2V
Ta=75°C
25°C
--25°C
IT05411
1.0 23 5 10 100
72357 1000
23 57
2
5
7
5
7
3
2
100
3
10
--25°C
25°C
Ta=75°C
IC / IB=10
VCE(sat) -- IC
Collector Current, IC -- mA
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
VCE(sat) -- IC
IT05110
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
Collector Current, IC -- mA
IT05110
1000
2
3
100
7
5
2
3
7
5
101.0 23 510 100
723 5
723 5
7
1000
IC / IB=50
--25°C
25°C
Ta=75
°
C
VCE(sat) -- IC
IT05109
Collector Current, IC -- mA
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
1.0 23 5 10 100
72357 1000
23 57
2
5
7
3
2
100
3
10
--25°C
25°C
Ta=75°C
IC / IB=20
CPH6530
No.8709-4/5
2
3
5
7
2
--0.1
3
2
3
5
7
--1.0
--0.01 223 57
--0.1 --1.0 23357
--10 IT10001
500µs
1ms
10ms
100ms
IC= --1A
ICP= --2A
DC operation
100µs
2
3
5
7
2
0.1
3
5
7
2
1.0
0.01 223 57
0.1 1.0 2357 357
10 IT10002
500µs
1ms
10ms
100ms
IC=0.5A
ICP=1.0A
DC operation
100µs
[PNP] [NPN]
[PNP] [NPN]
[PNP] [NPN]
[NPN]
Collector Current, IC -- mA
fT -- IC
Gain-Bandwidth Product, fT -- MHz
IT05101
Collector-to-Base Voltage, VCB -- V
Cob -- VCB
Output Capacitance, Cob -- pF
IT05100
--1.0 53 --1000--100
27 5327 5327
--10
2735 --10 23
--1.0
10
1.0
2
3
2
7
5
3
f=1MHz
VCE= --2V
100
10
1000
7
5
3
2
7
5
3
2
A S O
Collector-to-Emitter Voltage, VCE -- V
Collector Current, IC -- A
PC -- Ta
Collector Dissipation, PC -- W
Ambient Temperature, Ta -- °C
IT10000
0
0.6
0.7
0.5
0.3
0.4
0.1
0.2
020 40 60 80 100 120 140 160
[PNP/NPN]
Ta=25°C
Single pulse
Mounted on a ceramic board (600mm
2
✕0.8mm) 1unit
Mounted on a ceramic board (600mm
2
✕0.8mm) 1unit
A S O
Collector-to-Emitter Voltage, VCE -- V
Collector Current, IC -- A
fT -- IC
IT05113
Cob -- VCB
IT05112
Collector Current, IC -- mA
Output Capacitance, Cob -- pF
Collector-to-Base Voltage, VCB -- V
Gain-Bandwidth Product, fT -- MHz
IT05111
VBE(sat) -- IC
Collector Current, IC -- mA
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
1.0 53
100
1000
7
5
3
2
1000100
27 5327 5327
10
2735 2 735
10 100
1.0
10
1.0
7
5
3
2
1.0 23 5357
10
272357
100 1000
10
1.0
0.1
7
5
3
2
7
5
3
2
75
°
C
Ta= --25
°
C
25
°
C
IC / IB=20
f=1MHz
VCE=10V
Ta=25°C
Single pulse
Mounted on a ceramic board (600mm
2
✕0.8mm) 1unit
CPH6530
No.8709-5/5PS
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer’s
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer’s products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of December, 2005. Specifications and information herein are subject
to change without notice.
