HiPerFET Power MOSFETs Low Type Gate-cp, large Sa Suffix Q G Avalanche rated with Fast Intrinsic Diode s Vv. 1 R Qojom |[SOPLUS220 (C)/ISOPLUS247, | TO268 T0264 (K) $OT227B Max. | T,225C|T.=25C| typ. | _ (R) (1) > (N) Vv A ma | nc | &@ Z D> Q 3 P TO-263 TO-220 | pLus247 oy i? : (A) (P) + (Xx) a ISOPLUSI4-Pac | ISOPLUS227 Z oe exw, | (F) () ed : TO-247 * TO-204 Ar S > New we A (H) (mM) oe 60] (1180 | 0.005 | 420 IXFR180N06 (9340 | 0.003 | 600 IXFN340N06 70 76 | 0.011 | 240 IXFH76NO07-114 76 | 0.012 | 240 IXFH76NO7-12 (180 | 0.007 | 480 IXFN180N07 (9200 | 0.006 | 480 IXFN200N07 (9180 | 0.006 | 420 IXFX180N07 IXFK180N07 (1180 | 0.006 | 420 IXFR180N07 (280 | 0.006 | 420 IXFN280N07 (7340 | 0.004 | 600 IXFN340N07 80 80 | 0.009 | 180 > IXFH80N08 IXFT8ONO8 85 | 0.009 | 180 | IXFC8O0NO085 | IXFH80N085 IXFT80NO085 85] (180 | 0.007 | 320 IXFX180N085 IXFK180N085 (180 | 0.007 | 320 IXFR180NO085 280 | 0.0044 | 600 IXFH280N085 100 75 | 0.025 | 180 > FMM75-01F) 75 | 0.025 | 180 > FMK75-01 Fia) 75 | 0.02 180 IXFH75N10 IXFM75N10 75 | 0.02 140 IXFH75N10Q 76 | 0.015 | 180 >IXFRSON10Q 980 | 0.015 | 180 IXFH8ON10Q IXET80N10Q 80 | 0.0125 | 230 | IXFC80N10 IXFT80N10 80 | 0.0125 | 230 IXFH80N10 (1100 | 0.0125 | 180 IXFN100N10S1 2) (100 | 0.0125 | 180 IXFN100N10S2) 100 | 0.0125 | 180 1XFN100N10S3) (1176 | 0.008 | 360 IXFE180N10 (180 | 0.008 | 360 IXFX180N10 IXFK180N10 | IXFN180N10 (180 | 0.008 | 360 IXFR180N10 (230 | 0.006 | 690 IXFN230N10 150 67 | 0.028 | 180 IXFR70N15 70 | 0.028 | 180 IXFH70N15 IXFT7ON15 75 | 0.0225 | 180 IXFR80N15Q 80 | 0.0225 | 180 IXFH80N15Q IXFT80N15Q | IXFK80N15Q (1105 | 0.0125 | 360 IXFR150N15 (150 | 0.0125 | 360 IXFX150N15 IXFK150N15 | IXFN150N15 200 50 | 0.04 98 IXFR58N20Q 50 | 0.045 | 190 IXFH50N20 IXFM50N20 58 | 0.04 190 IXFH58N20 IXFT58N20 58 | 0.04 98 IXFH58N20Q | IXFT58N20Q 60 | 0.033 | 155 | IXFC6ON20 | IXFH6ON20 | IXFT60N20 Foot notes: explanations see page 27 23HiPerFET Power MOSFETs Lo W Gate.c qT har YES = Sutiy oO G Avalanche rated with Fast Intrinsic Diode s v, \ A, am (SOPLUS220 (C)]ISOPLUS247, | TO268 T0264 (K) ME | 12H | Teste) TS? o po D y v A ma ne 2 oe TO-263 TO-220 | pLus247 oy (A) (P) ) > ISOPLUSI4 Pac ISOPLUS227 WD E aD To-247 ** TO-204 > > New os (H) (my coe 200| 74 | 0.3 | 280 IXFH74N20 | IXFT74N20 80 | 0.03 | 280 IXFK80N20 80 | 0.028 | 180 IXFR80N20Q 80 | 0.028 | 180 iXFH8ON20Q | IXFT8ON20Q | IXFK80N20Q 90 | 0.022 | 140 1XFR9ON20 90 | 0.022 | 190 IXFX9ON20Q | IXFK9ON20Q 120 | 0.017 | 360 IXFX120N20 | IXFK120N20 IXFN120N20 105 | 0.017 | 360 IXFR120N20 180 | 0.01 | 380 IXFN180N20 250| 60 | 0.047 | 180 IXFHEON25Q |>IXFTBON25Q | _IXFK60N25Q 87 | 0.027 | 300 >IXFR100N25 100 | 0.027 | 300 IXFX1O0ON25 IXFK100N25 IXEN100N25 300| 35 | 0.085 | 95 | IXFC40N300 40 | 0.085 | 177 IXFH40N30 40 | 0.085 | 95 IXFH4ON30Q | IXFT40N30Q 40 | 0.085 | 177 IXFJ40N30 40 | 0.088 | 177 IXFM40N30 52 | 0.06 | 150 IXFH52N30Q | IXFT52N30Q | IXFK52N30Q 66 | 0.046 | 190 IXFE73N30Q 73 | 0.042 | 190 >IXFX73N30Q > IXFK73N30Q IXFN73N30Q 73 | 0.045 | 360 IXFK73N30 IXFN73N30 75 | 0.033 | 360 IXFR9ON3O 90 | 0.033 | 360 IXFX90N30 IXFK9ON30 IXFN9ON30 130 | 0.018 | 380 IXFN130N30 400} 30 | 016 | 95 >IXFH30N40Q_ |>IXFT30N40Q > IXFM30N40Q 500] 13 | 04 | 110 | IXFC13N50Q IXFH13NSO | IXFM13N50 13, | 04 | 110 IXFU13N50 21 | 0.25 | 90 IXFH21N50Q | IXFT21N50Q 21 | 0.25 | 95 >FDM21-050Cu) 21 | 0.25 | 95 >FMD21-05QCx) 21 | 0.25 | 135 IXFM21N5003) 21 | 0.23 | 135 | IXFC24N50 22 | 0.23 | 95 iXFR24N50Q 22 | 0.23 | 135 IXFR24N50 24 | 0.23 | 135 IXFH24N50_ | IXFT24N50Q 24 | 0.23 | 135 IXFH24N50Q 23 | 0.2 | 135 | IXFC26N50 24 | 0.2 95 IXFR26N50Q 24 | 02 95 IXFR26NS0 26 | 02 | 135 IXFH26N50 | IXFT26N50 26 | 0.2 95 IXFH26N50Q | IXFT26N50Q Foot notes: explanations see page 27 24HiPerFET Power MOSFETs Avalanche rated with Fast Intrinsic Diode low Gate. Types = samnege 6 Q Vv I R ISOPLUS220 (C) ISOPLUS247 TO268 . TO264 (K) SOT227B Gfon] ee Max. | T,=25C |T,=25 C | typ. (R) D> (7) (N) caueS. v A ma ne ae IB3PAK T0-263 TO-220 | pLus2a7 (ay <> J (A) (P) (x) DD ISOPLUSI4-Pac | ISOPLUS227 CF (F) (E) Y ed To-247 ** TO-204 (77, . > p> New & (H) (M) hee 500 30 0.16 153 IXFR30N50Q 30 0.15 153 IXFR32N50Q 30 0.16 153 IXFH30N50Q IXFT30N50Q 30 0.16 227 IXFH30N50 IXFT30N50 30 0.16 153 IXFX30N50Q IXFK30N50Q 32 0.15 227 IXFH32N50 IXFT32N50 32 0.15 153 IXFH32N50Q IXFT32N50Q 32 0.15 153 IXFX32N50Q IXFK32N50Q 32 0.15 153 IXFJ32N50Q 33 0.16 227 IXFK33N50 35 0.15 227 IXFK35N50 34 0.12 190 IXFR44N50Q 40 0.1 190 IXFR48N50Q 43 0.1 330 IXFRSON50 44 0.12 270 IXFK44N50) IXFN44N50,3) 44 0.12 270 IXFN44N50U2.2) 44 0.12 270 IXFN44N50U3 (2) 44 0.12 190 IXFX44N50Q IXFK44N50Q IXFN44N500 42 0.1 190 IXFE48N50Q 48 0.1 190 IXFX48N50Q IXFK48N50Q IXFN48N50Q 48 0.1 270 IXFK48N50 IXFN48N50 42 0.1 190 IXFE48N50QD2) 42 0.1 190 IXFE48N500D3 2) 48 0.1 270 IXFN48N50U2 (2) 48 0.1 270 IXFN48N50U3 (2) 48 0.08 330 IXFR55N50 50 0.085 | 330 IXFE55N50 50 0.1 330 IXFX50N50 IXFK50N50 IXFN50N50 55 0.08 330 IXFXS5N50 IXFK55N50 IXFN55N50 72 0.055 | 380 IXFE80N50 75 0.055 | 380 IXFN75N50 80 0.05 380 IXFN80N50 550 22 0.27 150 IXFH22N55 48 0.11 330 IXFX48N55 IXFK48N55 IXFN48N55 600 20 0.35 151 IXFH20N60 IXFM20N60 20 0.35 95 IXFH20N60Q IXFT20N60Q 23 0.25 150 IXFR26N60Q 28 0.25 150 IXFH26N60Q IXFT26N60Q IXFK26N60Q 32 0.25 325 IXFK32N60(3) IXFN32N60@) Foot notes: explanations see page 27 25HiPerFET Power MOSFETs Low Gate-ch, Types = Suttie G Avalanche rated with Fast Intrinsic Diode v \ R ISOPLUS220 (C) | ISOPLUS247 TO-268 T0264 (kK) S0T227B pss Dicont) oso G{on) (R) (T) +s Max. | T,=25C | T,=25 C| typ. ae 4 (Ny v A ma ne e se I3PAK Vom TO-263 TO-220 | pLus247 (wy => A (A) (P) 09 Ca ISOPLUSI4-Pac | ISOPLUS227 Z ~~, | (F) (E) sf TO-247 * 70-204 Ae b> New . (H) wm | 0S as 600| 36 0.18 | 325 IXFK36N60 IXFN36N60 38 0.13 | 330 IXFR44N60 40 0.13 | 330 > IXFE44N60 44 0.13 | 330 IXFX44N60 IXFK44N60 IXFN44N60 60 0.08 | 380 IXFN6O0N60 800 3.6 3.6 24 | IXFA3SN80 3.6 3.6 24 | IXFP3N80 7 1.4 110 IXFH7N80\3) IXFM7N80a) 8 11 85 IXFH8N80 9 11 56 IXFHON80Q 9 0.9 85 IXFHON80 11 0.95 | 128 IXFH11N80i) | IXFM11N80) 13 0.8 90 IXFH13N80Q | IXFT13N80Q 13 0.8 128 IXFH13N80 IXFM13N80 14 0.7 128 IXFH14N80 15 0.6 128 IXFH15N80 15 0.6 90 IXFH15N80Q | IXFT15N80Q 13 0.6 90 IXFR15N80Q 20 0.42 150 IXFH20N80Q IXFT20N80Q | IXFK20N80Q 27 0.32 | 170 IXFR27N80Q 27 0.32 | 170 IXFX27N80Q IXFK27N80Q IXFN27N80Q 27 0.32 | 350 IXFK27N80 IXFN27N80 28 0.24 | 270 IXFR34N80 34 0.24 | 270 IXFX34N80 IXFK34N80 IXFN34N80 44 0.145 | 380 IXFN44N80 900 6 1.8 88 IXFHENS0\3) IXFM6N903) 7 1.5 56 IXFH7N90Q IXFT7N90Q 10 1.4 155 IXFH1ON90,) | IXFM1ON90) 12 0.9 155 IXFH12N90 IXFM12N90 12 0.9 90 IXFH12N90Q | IXFT12N90Q 13 0.8 155 IXFH13N90 16 0.65 | 133 IXFH16N90Q | IXFT16N90Q | IXFK16N90Q 24 0.45 | 170 IXFX24N90Q IXFK24N90Q IXFN24N90Q 25 0.33 | 240 IXFX25N90 IXFK25N90 IXFN25N90 26 0.3 240 IXFX26N90 IXFK26N90 IXFN26N90 35 0.25 | 390 > IXFE3ON90 39 0.2 390 IXFN39N90 1000 4 2.8 39] IXFA4N100Q| IXFH4N100Q | IXFT4N100Q 4 2.8 39] IXFP4N100Q 3.5 2.8 39 > IXFR4N100Q Foot notes: explanations see page 27 26HiPerFET Power MOSFETs low Gat -Ch, Types = Suttig oo Avalanche rated with Fast Intrinsic Diode 8 TM - Voes | _lasam | Rosy | Savon ISOPLUS220" (C) ISOPLUS247 To 268 | T0264 (K) $OT227B Max. | T,=25C |T,=25 C| typ. Y (1) (N) 5 v A mQ ne Ss ISPAK Ss TO-263 TO-220 | pLusza7 ta)" => x (A) (P) rb9) wi ISOPLUSI4-Pac | ISOPLUS227 _ % vege, | (F) (E) : TO-247 = TO-204 A. - > New . f (H) (M) : oe 1000 6 2 88 IXFH6N100 IXFM6N100 6 2 48 IXFHEN100Q IXFT6N100Q 10 | 1.2 122 IXFH10N100 IXFM10N100 10 | 1.2 122 IXFT10N100 10 1.2 90 IXFR1ON100Q 12 | 1.05 | 122 IXFH12N100 IXFM12N100 12 | 1.05 | 122 IXFT12N100 12 1 90 IXFH12N100Q_= | IXFT12N100Q 12 | 1 90 IXFR12N100Q 13 | 09 122 IXFH13N100 IXFT13N100 14 | 0.75 | 220 IXFH14N100 IXFT14N100 14 | 0.75 | 220 IXFX14N100 15 0.725 ; 130 IXFH15N100Q_ =| IXFT15N100Q | IXFK15N100Q 15 | 0.7 220 IXFH15N100 IXFT15N100 15 | 0.7 220 IXFX15N100 18 0.5 170 IXFR21N100Q 21 | 05 170 IXFX21N100Q IXFK21N100Q IXFN21N100Q 22 | 0.39 | 250 IXFR24N100 IXFF24N100 > IXFE24N100 23 | 0.43. | 250 > IXFN23N100 24 | 0.39 | 250 IXFX24N100 IXFK24N100 IXFN24N100 32 | 0.28 | 380 IXFE36N100 34 | 0.28 | 380 > IXFN34N100 36 | 0.24 | 380 IXFN36N100 I3PAK is the leaded TO-268 case style. (1) Current limited by external leads (2) $1 Schottky diode connected in antiparallel to MOSFET; S2 MOSFET and Schottky diode chips connected in boost configuration; $3 MOSFET and Schottky diode chips connected in buck configuration; U2 MOSFET and FRED diode chips connected in boost configuration; U3 MOSFET and FRED diode chips connected in buck configuration. (3) Not for new designs (4) ISOPLUS i4PAC circuit configurations: FMM 2 MOSFETs connected in series. FMK 2 MOSFETs connected common source. FMD MOSFET and HiPerDyn FRED diode connected in boost configuration. FDM MOSFET and HiPerDyn FRED diode connected in buck configuration. Outline drawings on page 91-100 27