TSM2N60
600V N-Channel Power MOSFET
1/8
Version: G12
TO
-
220
TO
-
251
(IPAK)
TO
-
252
(DPAK)
V
DS
(V) R
DS(on)
(Ω) I
D
(A)
600 5 @ V
GS
=10V 1
General Description
The TSM2N60 is used an advanced termination scheme to provide enhanced voltage-blocking capability without
degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in
avalanche and commutation modes. The new energy efficient design also offers a drain- to-source diode with a
fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and
PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and
commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage
transients.
Features
● Robust high voltage termination
● Avalanche energy specified
● Diode is characterized for use in bridge circuits
● Source to Drain diode recovery time comparable to a
discrete fast recovery diode.
Ordering Information
Part No. Package
Packing
TSM2N60CP RO TO-252 2.5Kpcs/ 13” Reel
TSM2N60CP ROG TO-252 2.5Kpcs/ 13” Reel
TSM2N60CH C5 TO-251 75pcs / Tube
TSM2N60CH C5G TO-251 75pcs / Tube
TSM2N60CZ C0 TO-220 50pcs / Tube
Note: “G” denotes for Halogen Free
Absolute Maximum Rating
(Ta = 25
o
C unless otherwise noted)
Parameter Symbol Limit Unit
Drain-Source Voltage V
DS
600 V
Gate-Source Voltage V
GS
±30 V
Continuous Drain Current I
D
2 A
Pulsed Drain Current I
DM
9 A
Continuous Source Current (Diode Conduction)
a,b
I
S
1 A
Single Pulse Drain to Source Avalanche Energy
(V
DD
= 50V, I
AS
=1.8A, L=68mH, R
G
=25Ω) EAS 120 mJ
Maximum Power Dissipation @ Tc = 25
o
C TO-251 / TO-252
P
DTOT
70 W
TO-220 70
Operating Junction Temperature T
J
+150
o
C
Operating Junction and Storage Temperature Range T
J
, T
STG
-55 to +150
o
C
Pin
Definition
:
1. Gate
2. Drain
3. Source
Block Diagram
N-Channel MOSFET
TSM2N60
600V N-Channel Power MOSFET
2/8
Version: G12
Thermal Performance
Parameter Symbol Limit Unit
Thermal Resistance - Junction to Case TO-251 / TO-252 RӨ
JC
2.87
o
C/W
TO-220 2.32
Thermal Resistance - Junction to Ambient
TO-251 / TO-252 RӨ
JA
110
o
C/W
TO-220 62.5
Notes: Surface mounted on FR4 board t ≤ 10sec
Electrical Specifications
(Ta = 25
o
C unless otherwise noted)
Parameter Conditions Symbol
Min Typ Max
Unit
Static
Drain-Source Breakdown Voltage V
GS
= 0V, I
D
= 250uA BV
DSS
600 -- -- V
Drain-Source On-State Resistance V
GS
= 10V, I
D
= 1A R
DS(ON)
-- 5 Ω
Gate Threshold Voltage V
DS
= V
GS
, I
D
= 250uA V
GS(TH)
2.0 -- 4.0 V
Zero Gate Voltage Drain Current V
DS
= 600V, V
GS
= 0V I
DSS
-- -- 10 uA
Gate Body Leakage V
GS
= ±20V, V
DS
= 0V I
GSS
-- -- ± 100
nA
Forward Transconductance V
DS
= 40V, I
D
= 1A g
fs
-- 5 -- S
Diode Forward Voltage I
S
= 2A, V
GS
= 0V V
SD
-- -- 1.6 V
Dynamic
b
Total Gate Charge V
DS
= 400V, I
D
= 2A,
V
GS
= 10V
Q
g
-- 13 22
nC
Gate-Source Charge Q
gs
-- 2 --
Gate-Drain Charge Q
gd
-- 6 --
Input Capacitance V
DS
= 25V, V
GS
= 0V,
f = 1.0MHz
C
iss
-- 435 --
pF
Output Capacitance C
oss
-- 56 --
Reverse Transfer Capacitance C
rss
-- 9.2 --
Switching
c
Turn-On Delay Time V
GS
= 10V, I
D
= 2A,
V
DD
= 300V, R
G
= 18Ω
t
d(on)
-- 12 --
nS
Turn-On Rise Time t
r
-- 21 --
Turn-Off Delay Time t
d(off)
-- 30 --
Turn-Off Fall Time t
f
-- 24 --
Notes:
a. Pulse test: pulse width <=300uS, duty cycle <=2%
b. For design reference only, not subject to production testing.
c. Switching time is essentially independent of operating temperature.
TSM2N60
600V N-Channel Power MOSFET
3/8
Version: G12
Electrical Characteristics Curve
(Ta = 25
o
C, unless otherwise noted)
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
TSM2N60
600V N-Channel Power MOSFET
4/8
Version: G12
Electrical Characteristics Curve
(Ta = 25
o
C, unless otherwise noted)
On-Resistance vs. Gate-Source Voltage
Threshold Voltage
Maximum Safe Operating Area
Normalized Thermal Transient Impedance, Junction-to-Ambient
TSM2N60
600V N-Channel Power MOSFET
5/8
Version: G12
TO-220 Mechanical Drawing
Marking Diagram
Y
= Year Code
M
= Month Code
(A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug,
I=Sep, J=Oct, K=Nov, L=Dec)
L
= Lot Code
TO-220 DIMENSION
DIM
MILLIMETERS INCHES
MIN MAX MIN MAX
A 10.000 10.500 0.394 0.413
B 3.740 3.910 0.147 0.154
C 2.440 2.940 0.096 0.116
D - 6.350 - 0.250
E 0.381 1.106 0.015 0.040
F 2.345 2.715 0.092 0.058
G 4.690 5.430 0.092 0.107
H 12.700 14.732 0.500 0.581
J 14.224 16.510 0.560 0.650
K 3.556 4.826 0.140 0.190
L 0.508 1.397 0.020 0.055
M 27.700 29.620 1.060 1.230
N 2.032 2.921 0.080 0.115
O 0.255 0.610 0.010 0.024
P 5.842 6.858 0.230 0.270
TSM2N60
600V N-Channel Power MOSFET
6/8
Version: G12
TO-251 Mechanical Drawing
Unit: Millimeters
Marking Diagram
Y
= Year Code
M
= Month Code
(A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep,
J=Oct, K=Nov, L=Dec)
= Month Code for Halogen Free Product
(O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep,
X=Oct, Y=Nov, Z=Dec)
L
= Lot Code
TSM2N60
600V N-Channel Power MOSFET
7/8
Version: G12
TO-252 Mechanical Drawing
Unit: Millimeters
Marking Diagram
Y
= Year Code
M
= Month Code
(A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep,
J=Oct, K=Nov, L=Dec)
= Month Code for Halogen Free Product
(O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep,
X=Oct, Y=Nov, Z=Dec)
L
= Lot Code
TSM2N60
600V N-Channel Power MOSFET
8/8
Version: G12
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