© 2000 IXYS All rights reserved 1 - 2
HiPerFREDTM Epitaxial Diode
with soft recovery
Features
●International standard package
●Planar passivated chips
●Very short recovery time
●Extremely low switching losses
●Low IRM-values
●Soft recovery behaviour
●Epoxy meets UL 94V-0
Applications
●Antiparallel diode for high frequency
switching devices
●Antisaturation diode
●Snubber diode
●Free wheeling diode in converters
and motor control circuits
●Rectifiers in switch mode power
supplies (SMPS)
●Inductive heating
●Uninterruptible power supplies (UPS)
●Ultrasonic cleaners and welders
Advantages
●Avalanche voltage rated for reliable
operation
●Soft reverse recovery for low
EMI/RFI
●Low IRM reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating
switch
Dimensions see outlines.pdf
C
A
A = Anode, C = Cathode, TAB = Cathode
CA
TO-220 AC
C (TAB)
Pulse test: ① Pulse Width = 5 ms, Duty Cycle < 2.0 %
② Pulse Width = 300 ms, Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified
IXYS reserves the right to change limits, test conditions and dimensions.
DSEP 12-12A
IFAV = 15 A
VRRM = 1200 V
trr = 40 ns
VRSM VRRM Type
V V
1200 1200 DSEP 12-12A
Symbol Conditions Maximum Ratings
IFRMS 35 A
IFAVM TC = 125°C; rectangular, d = 0.5 15 A
IFSM TVJ = 45°C; tp = 10 ms (50 Hz), sine 90 A
EAS TVJ = 25°C; non-repetitive 8.7 mJ
IAS = 9 A; L = 180 µH
IAR VA = 1.25·VR typ.; f = 10 kHz; repetitive 0.9 A
TVJ -55...+175 °C
TVJM 175 °C
Tstg -55...+150 °C
Ptot TC = 25°C 95 W
Mdmounting torque 0.4...0.6 Nm
Weight typical 2 g
Symbol Conditions Characteristic Values
typ. max.
IR①TVJ = 25°C VR= VRRM 100 mA
TVJ = 150°C VR= VRRM 0.5 mA
VF②IF = 15 A; TVJ = 150°C 1.79 V
TVJ = 25°C 2.75 V
RthJC 1.6 K/W
RthCH 0.5 K/W
trr IF = 1 A; -di/dt = 100 A/ms; 40 ns
VR = 30 V; TVJ = 25°C
IRM VR = 100 V; IF = 25 A; -diF/dt = 100 A/ms4.5 A
TVJ = 100°C
008
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© 2000 IXYS All rights reserved 2 - 2
NOTE: Fig. 2 to Fig. 6 shows typical values
DSEP 12-12A
200 600 10000 400 800
100
120
140
160
180
0.00001 0.0001 0.001 0.01 0.1 1
0.001
0.01
0.1
1
10
0 40 80 120 160
0.0
0.5
1.0
1.5
2.0
Kf
TVJ
°C-diF/dt
ts
K/W
0 200 400 600 800 1000
0
40
80
120
0.0
0.4
0.8
1.2
VFR
diF/dt
V
200 600 10000 400 800
0
10
20
30
40
50
100 1000
0.0
0.5
1.0
1.5
2.0
2.5
3.0
01234
0
5
10
15
20
25
30
35
40
IRM
Qr
IF
A
VF-diF/dt -diF/dt
A/
m
s
A
V
m
C
A/
m
sA/
m
s
trr
ns
tfr
ZthJC
A/
m
s
µs
DSEP 12-12A
IF= 30A
IF= 15A
IF= 7.5A
TVJ= 100°C
VR = 600V TVJ= 100°C
IF = 15A
Fig. 3 Peak reverse current IRM
versus -diF/dt
Fig. 2 Reverse recovery charge Qr
versus -diF/dt
Fig. 1 Forward current IF versus VF
TVJ= 100°C
VR = 600V TVJ= 100°C
VR = 600V
IF= 30A
IF= 15A
IF= 7.5A
Qr
IRM
Fig. 4 Dynamic parameters Qr, IRM
versus TVJ
Fig. 5 Recovery time trr versus -diF/dt Fig. 6 Peak forward voltage VFR and tfr
versus diF/dt
IF= 30A
IF= 15A
IF= 7.5A
tfr
VFR
Fig. 7 Transient thermal resistance junction to case
Constants for ZthJC calculation:
iR
thi (K/W) ti (s)
1 0.9084 0.0052
2 0.3497 0.0003
3 0.3419 0.0165
TVJ=150°C
TVJ=100°C
TVJ= 25°C
008
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