QRD1113, QRD1114 — Reflective Object Sensor
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
QRD1113, QRD1114 Rev. 1.1.0
January 2008
PACKAGE DIMENSIONS
QRD1113, QRD1114
Reflective Object Sensor
Features
Phototransistor Output
No contact surface sensing
Unfocused for sensing diffused surfaces
Compact Package
Daylight filter on sensor
Description
The QRD1113/14 reflective sensor consists of an infra-
red emitting diode and an NPN silicon phototransistor
mounted side by side in a black plastic housing. The on-
axis radiation of the emitter and the on-axis response of
the detector are both perpendicular to the face of the
QRD1113/14. The phototransistor responds to radiation
emitted from the diode only when a reflective object or
surface is in the field of view of the detector.
Package Dimensions
0.173 (4.39)
0.120 (3.05)
0.240 (6.10)
0.183 (4.65)
0.500 (12.7)
MIN
0.020 (0.51)
SQ. (4X)
0.100 (2.54)
0.083 (2.11)
OPTICAL
CENTERLINE
PIN 1 COLLECTOR
PIN 2 EMITTER PIN 4 CATHODE
PIN 3 ANODE
PIN 1 INDICATOR
0.083 (2.11)
3
4
2
1
14
23
Notes:
1. Dimensions for all drawings are in inches (millimeters).
2. Tolerance of ± .010 (.25) on all non-nominal dimensions unless otherwise specified.
3. Pins 2 and 4 typically .050" shorter than pins 1 and 3.
4. Dimensions controlled at housing surface.
Schematic
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
QRD1113, QRD1114 Rev. 1.1.0 2
QRD1113, QRD1114 — Reflective Object Sensor
Absolute Maximum Ratings
(T
A
= 25°C unless otherwise specified)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Electrical/Optical Characteristics
(T
A
= 25°C)
Notes:
1. Derate power dissipation linearly 1.33mW/°C above 25°C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning agents.
4. Soldering iron tip 1/16” (1.6 mm) minimum from housing.
5. As long as leads are not under any stress or spring tension.
6. D is the distance from the sensor face to the reflective surface.
7. Crosstalk (I
CK
) is the collector current measured with the indicated current on the input diode and with no reflective surface.
8. Measured using Eastman Kodak neutral white test card with 90% diffused reflecting as a reflecting surface.
Symbol Parameter Rating Units
T
OPR
Operating Temperature -40 to +85 °C
T
STG
Storage Temperature -40 to +100 °C
T
SOL-I
Lead Temperature (Solder Iron)
(2,3)
240 for 5 sec °C
T
SOL-F
Lead Temperature (Solder Flow)
(2,3)
260 for 10 sec °C
EMITTER
I
F
Continuous Forward Current 50 mA
V
R
Reverse Voltage 5 V
P
D
Power Dissipation
(1)
100 mW
SENSOR
V
CEO
Collector-Emitter Voltage 30 V
V
ECO
Emitter-Collector Voltage V
P
D
Power Dissipation
(1)
100 mW
Symbol Parameter Test Conditions Min. Typ. Max. Units
INPUT (Emitter)
V
F
Forward Voltage I
F
= 20mA 1.7 V
I
R
Reverse Leakage Current V
R
= 5V 100 µA
λ
PE
Peak Emission Wavelength I
F
= 20mA 940 nm
OUTPUT (Sensor)
BV
CEO
Collector-Emitter Breakdown I
C
= 1mA 30 V
BV
ECO
Emitter-Collector Breakdown I
E
= 0.1mA 5 V
I
D
Dark Current V
CE
= 10 V, I
F
= 0mA 100 nA
COUPLED
I
C(ON)
QRD1113 Collector Current I
F
= 20mA, V
CE
= 5V, D = .050"
(6,8)
0.300 mA
I
C(ON)
QRD1114 Collector Current I
F
= 20mA, V
CE
= 5V, D = .050"
(6,8)
1mA
V
CE(SAT)
Collector Emitter Saturation
Voltage
I
F
= 40mA, I
C
= 100µA, D = .050"
(6,8)
0.4 V
I
CX
Cross Talk I
F
= 20mA, V
CE
= 5V, E
E
= 0
(7)
.200 10 µA
t
r
Rise Time V
CE
= 5V, R
L
= 100
, I
C(ON)
= 5mA 10 µs
t
f
Fall Time 50 µs
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
QRD1113, QRD1114 Rev. 1.1.0 3
QRD1113, QRD1114 — Reflective Object Sensor
Typical Performance Curves
IF - FORWARD CURRENT (mA) IF - FORWARD CURRENT (mA) TA - AMBIENT TEMPERATURE (˚C)
TA - AMBIENT TEMPERATURE (˚C)
REFLECTIVE SURFACE DISTANCE (mils)
VF - FORWARD VOLTAGE (mV)ID - COLLECTOR DARK CURRENT
NORMALIZED - COLLECTOR CURRENT (mA)
IC - COLLECTOR CURRENT (mA)
IC - COLLECTOR CURRENT (mA)
1.60 10.0 1.0
0.8
0.6
0.4
0.2
0
1.00
0.10
0.01
.001
1.0
.9
0-50 -25 25 50 750
-50 -25 25 50 75 1000
10 20 30 40 50
1.40
1.20
1.00
0.20
0.60
0.40
0.20
0.1
102
101
10
1.0
10-1
10-2
10-3
1.0 10 100
Fig. 1 Forward Voltage vs.
Forward Current
Fig. 2 Normalized Collector Current vs.
Forward Current
Fig. 3 Normalized Collector Current vs.
Temperature
Fig. 4 Normalized Collector Dark Current vs.
Temperature
Fig. 5 Normalized Collector Current vs.
Distance
IF = 10 mA
VCE = 5 V
.8
.7
.6
.5
.4
.3
.2
.1
0
050100 150 200 250 300 350 400 450 500
VCE = 5 V
D = .05"
IF = 20 mA
VCE = 5 V
VCE = 10 V
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
QRD1113, QRD1114 Rev. 1.1.0 4
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This datasheet contains specifications on a product that has been
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Rev. I32
QRD1113, QRD1114 — Reflective Object Sensor