2015 Microchip Technology Inc. DS20005404A-page 1
DN2450
Features
• High-input impedance
• Low-input capacitance
• Fast switching speeds
• Low on-resistance
• Free from secondary breakdown
• Low input and output leakages
Applications
• Normally-on switches
• Battery operated systems
• Voltage to current converters
• Constant current sources
• Current and voltage limiters
Description
This low threshold, depletion-mode, normally-on, tran-
sistor utilizes an advanced vertical Diffusion Metal
Oxide Semiconductor (DMOS) structure and a well
proven silicon-gate manufacturing process. This com-
bination produces a device with the power-handling
capabilities of bipolar transistors, plus the high-input
impedance and positive-temperature coefficient inher-
ent in Metal-Oxide Semiconductor (MOS) devices.
Characteristic of all MOS structures, this device is free
from thermal runaway and thermally-induced second-
ary breakdown.
Vertical DMOS Field-Effect Transistors (FETs) are ide-
ally suited to a wide range of switching and amplifying
applications where a very low threshold voltage, high
breakdown voltage, high input impedance, low input
capacitance, and fast switching speeds are desired.
N-Channel, Depletion-Mode, Vertical DMOS FET
2015 Microchip Technology Inc. DS20005404A-page 3
DN2450
1.0 ELECTRICAL CHARACTERISTICS
ABSOLUTE MAXIMUM RATINGS†
Drain-to-source voltage................................................................................................................................................................ BVDSX
Drain-to-gate voltage....................................................................................................................................................................BVDGX
Gate-to-source voltage................................................................................................................................................................... ±20V
Operating and storage temperature............................................................................................................................. -55°C to +150°C
Maximum junction temperature.....................................................................................................................................................150°C
1.1 ELECTRICAL SPECIFICATIONS
Note 1: All DC parameters are 100% tested at 25°C unless otherwise stated. Pulse test: 300 µs pulse, 2% duty cycle.
2: Specification is obtained by characterization and is not 100% tested.
† Notice: Stresses above those listed under “Maximum Ratings” may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at those or any other conditions above those indicated in the
operational listings of this specification is not implied. Exposure to maximum rating conditions for extended periods
may affect device reliability.
TABLE 1-1: DC AND AC CHARACTERISTICS
Electrical Specifications: Unless otherwise specified, for all specifications TA =TJ = +25°C
Symbol Parameter Min Typ Max Units Conditions
DC Parameters (Note 1, unless otherwise stated)
BVDSX Drain-to-source breakdown voltage 500 – – V VGS= -5.0V, ID= 100µA
VGS(OFF) Gate-to-source off voltage -1.5 – -3.5 V VDS= 25V, ID= 10µA
VGS(OFF) Change in VGS(OFF) with temperature – – -4.5 mV/°C VDS= 25V, ID= 10µA (Note 2)
IGSS Gate body leakage – – 100 nA VGS= ±20V, VDS= 0V
ID(OFF) Drain-to-source leakage current
––1.0µAV
DS= BVDSX, VGS= -10V
––1.0mA
VDS= 0.8 BVDSX,
VGS= -10V, TA= 125°C (Note 2)
IDSS Saturated drain-to-source current 700 – – mA VGS= 0V, VDS= 25V
RDS(ON)
Static drain-to-source on-state
resistance –7.010VGS= 0V, ID= 300mA
RDS(ON) Change in RDS(ON) with temperature – – 1.1 %/°C VGS= 0V, ID= 300mA (Note 2)
AC Parameters (Note 2)
GFS Forward transconductance 500 – – mmho VDS= 10V, ID= 300mA
CISS Input capacitance – 150 200
pF
VGS= -10V,
VDS= 25V,
f = 1MHz
COSS
Common source output capaci-
tance –4055
CRSS Reverse transfer capacitance – 15 25
td(ON) Turn-on delay time – – 15
ns
VDD= 25V,
ID= 300mA,
RGEN= 25,
trRise time – – 20
td(OFF) Turn-off delay time – – 15
tfFall time – – 15
Diode Parameters
VSD Diode forward voltage drop – – 1.8 V VGS= -5.0V, ISD= 300mA (Note 1)
trr Reverse recovery time – 800 – ns VGS= -5.0V, ISD= 300mA (Note 2)
DN2450
DS20005404A-page 4 2015 Microchip Technology Inc.
2.0 PIN DESCRIPTION
The locations of the pins are listed in Package Type.
TABLE 1-2: TYPICAL THERMAL RESISTANCE
Package θja
TO-252 (D-PAK) 81°C/W
TO-243AA (SOT-89) 133°C/W
TABLE 1-3: THERMAL CHARACTERISTICS
Package
ID1
continuous
(mA)
1. ID continuous is limited by max rated Tj
ID
pulsed
(mA)
Power
Dissipation
@TA = 25°C (W)
IDR1
(mA)
IDRM
(mA)
TO-252 (D-PAK) 350 1000 2.52
2. Mounted on FR4 board, 25mm x 25mm x 1.57 mm
350 1000
TO-243AA (SOT-89) 230 900 1.62230 900
TABLE 2-1: PIN DESCRIPTION
Pin # TO-252 Pin # TO-243AA Function
11GATE
3 3 SOURCE
2,4 2,4 DRAIN
2015 Microchip Technology Inc. DS20005404A-page 5
DN2450
3.0 APPLICATION INFORMATION
Figure shows the switching waveform and test circuit
for DN2450.
FIGURE 3-1: Switching Waveforms and Test Circuit
90%
10%
90% 90%
10%
10%
Pulse
Generator
VDD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
r
INPUT
INPUT
OUTPUT
0V
VDD
R
GEN
0V
-10V
t
f
Product Summary
BVDSX/BVDGX
(V)
RDS(ON)
(max) ()
IDSS
(min) (mA)
500 10 700
DN2450
DS20005404A-page 6 2015 Microchip Technology Inc.
4.0 PACKAGING INFORMATION
4.1 Package Marking Information
Legend: XX...X Product Code or Customer-specific information
Y Year code (last digit of calendar year)
YY Year code (last 2 digits of calendar year)
WW Week code (week of January 1 is week ‘01’)
NNN Alphanumeric traceability code
Pb-free JEDEC® designator for Matte Tin (Sn)
*This package is Pb-free. The Pb-free JEDEC designator ( )
can be found on the outer packaging for this package.
Note: In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available
characters for product code or customer-specific information. Package may or
not include the corporate logo.
3
e
3
e
3-lead TO-243AA *
(SOT-89)
Example
XXXYYWW
NNN
DN4E517
343
TO-252 (D-PAK) Example
YYWWNNN
XXXXX
XXXX
e3
1517343
2450
DN
e3
2015 Microchip Technology Inc. DS20005404A-page 7
DN2450
3-Lead TO-243AA (SOT-89) Package Outline (N8)
Symbol A b b1 C D D1 E E1 e e1 H L
Dimensions
(mm)
MIN 1.40 0.44 0.36 0.35 4.40 1.62 2.29 2.00†
1.50
BSC
3.00
BSC
3.94 0.73†
NOM-------- --
MAX 1.60 0.56 0.48 0.44 4.60 1.83 2.60 2.29 4.25 1.20
JEDEC Registration TO-243, Variation AA, Issue C, July 1986.
† This dimension differs from the JEDEC drawing
Drawings not to scale.
bb1
D
D1
EHE1
C
A
12 3
e
e1
Top View Side View
L
Note: For the most current package drawings, see the Microchip Packaging Specification at www.microchip.com/packaging.Note: For the most current package drawings, see the Microchip Packaging Specification at www.microchip.com/packaging.
DN2450
DS20005404A-page 8 2015 Microchip Technology Inc.
Note: For the most current package drawings, see the Microchip Packaging Specification at www.microchip.com/packaging.
2015 Microchip Technology Inc. DS20005404A-page 9
DN2450
APPENDIX A: REVISION HISTORY
Revision A (July 2015)
• Update file to new format
DN2450
DS20005404A-page 10 2015 Microchip Technology Inc.
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.
Device: DN2450 = N-Channel, Depletion-Mode,
vertical DMOS FET
Package: K4 = TO-252 (D-PAK)
N8 = TO-243AA (SOT-89)
Environmental G = Lead (Pb)-free/ROHS-compliant package
Media Type: (blank) = 2000/Reel
Examples:
a) DN2450K4-G TO-252 package,
2000/reel
b) DN2450N8-G TO-243AA package,
2000/reel
PART NO. X
Device
X
Environmental
XX
Package
Options
Media
--
Type
2015 Microchip Technology Inc. DS20005404A-page 11
DN2450
Information contained in this publication regarding device
applications and the like is provided only for your convenience
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
MICROCHIP MAKES NO REPRESENTATIONS OR
WARRANTIES OF ANY KIND WHETHER EXPRESS OR
IMPLIED, WRITTEN OR ORAL, STATUTORY OR
OTHERWISE, RELATED TO THE INFORMATION,
INCLUDING BUT NOT LIMITED TO ITS CONDITION,
QUALITY, PERFORMANCE, MERCHANTABILITY OR
FITNESS FOR PURPOSE. Microchip disclaims all liability
arising from this information and its use. Use of Microchip
devices in life support and/or safety applications is entirely at
the buyer’s risk, and the buyer agrees to defend, indemnify and
hold harmless Microchip from any and all damages, claims,
suits, or expenses resulting from such use. No licenses are
conveyed, implicitly or otherwise, under any Microchip
intellectual property rights unless otherwise stated.
Trademarks
The Microchip name and logo, the Microchip logo, dsPIC,
FlashFlex, flexPWR, JukeBlox, KEELOQ, KEELOQ logo, Kleer,
LANCheck, MediaLB, MOST, MOST logo, MPLAB,
OptoLyzer, PIC, PICSTART, PIC32 logo, RightTouch, SpyNIC,
SST, SST Logo, SuperFlash and UNI/O are registered
trademarks of Microchip Technology Incorporated in the
U.S.A. and other countries.
The Embedded Control Solutions Company and mTouch are
registered trademarks of Microchip Technology Incorporated
in the U.S.A.
Analog-for-the-Digital Age, BodyCom, chipKIT, chipKIT logo,
CodeGuard, dsPICDEM, dsPICDEM.net, ECAN, In-Circuit
Serial Programming, ICSP, Inter-Chip Connectivity, KleerNet,
KleerNet logo, MiWi, MPASM, MPF, MPLAB Certified logo,
MPLIB, MPLINK, MultiTRAK, NetDetach, Omniscient Code
Generation, PICDEM, PICDEM.net, PICkit, PICtail,
RightTouch logo, REAL ICE, SQI, Serial Quad I/O, Total
Endurance, TSHARC, USBCheck, VariSense, ViewSpan,
WiperLock, Wireless DNA, and ZENA are trademarks of
Microchip Technology Incorporated in the U.S.A. and other
countries.
SQTP is a service mark of Microchip Technology Incorporated
in the U.S.A.
Silicon Storage Technology is a registered trademark of
Microchip Technology Inc. in other countries.
GestIC is a registered trademark of Microchip Technology
Germany II GmbH & Co. KG, a subsidiary of Microchip
Technology Inc., in other countries.
All other trademarks mentioned herein are property of their
respective companies.
© 2015, Microchip Technology Incorporated, Printed in the
U.S.A., All Rights Reserved.
ISBN: 978-1-63277-585-6
Note the following details of the code protection feature on Microchip devices:
• Microchip products meet the specification contained in their particular Microchip Data Sheet.
• Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.
• There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
• Microchip is willing to work with the customer who is concerned about the integrity of their code.
• Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.”
Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our
products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Microchip received ISO/TS-16949:2009 certification for its worldwide
headquarters, design and wafer fabrication facilities in Chandler and
Tempe, Arizona; Gresham, Oregon and design centers in California
and India. The Company’s quality system processes and procedures
are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping
devices, Serial EEPROMs, microperipherals, nonvolatile memory and
analog products. In addition, Microchip’s quality system for the design
and manufacture of development systems is ISO 9001:2000 certified.
QUALITYMANAGEMENTS
YSTEM
CERTIFIEDBYDNV
== ISO/TS16949==
DS20005404A-page 12 2015 Microchip Technology Inc.
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01/27/15
