FEBRUARY 2012
AS7C38098A
512M X 16 BIT HIGH SPEED CMOS SRAM
1
FEATURES
Fast access time : 10ns
low power consumption:
Operating current:
80mA (TYP. 10/ns)
Standby current:
3mA(TYP)
Single 3.3V power supply
All inputs and outputs TTL compatible
Fully static operation
Tri-state output
Data byte control : LB# (DQ0 ~ DQ7)
UB# (DQ8 ~ DQ15)
Data retention voltage : 1.5V (MIN.)
Green package available
Package : 44-pin 400 mil TSOP-II
48-ball 6mmx8mm TFBGA
GENERAL DESCRIPTION
The AS7C38098A is a 8M-bit high speed CMOS
static random access memory organized as 512K
words by 16 bits. It is fabricated using very high
performance, high reliability CMOS technology. Its
standby current is stable within the range of
operating temperature.
The AS7C38098A operates from a single power
supply of 3.3V and all inputs and outputs are fully
TTL compatible
PRODUCT FAMILY
Product
Family
Operating
Temperature
Vcc Range
Speed
Standby(ISB1,TYP.)
Operating(Icc1,TYP.)
AS7C38098A
-40 ~ 85℃
2.7 ~ 3.6V
10ns
3mA
80/70mA
FEBRUARY 2012
AS7C38098A
512M X 16 BIT HIGH SPEED CMOS SRAM
2
FUNCTIONAL BLOCK DIAGRAM
PIN DESCRIPTION
SYMBOL
DESCRIPTION
A0 - A18
Address Inputs
DQ0 – DQ15
Data Inputs/Outputs
CE#
Chip Enable Input
WE#
Write Enable Input
OE#
Output Enable Input
LB#
Lower Byte Control
UB#
Upper Byte Control
VCC
Power Supply
VSS
Ground
FEBRUARY 2012
AS7C38098A
512M X 16 BIT HIGH SPEED CMOS SRAM
3
PIN CONFIGURATION
TFBGA
NC
A3
A10A9 A11
A0
A14
A8 NC
WE#
DQ9
DQ14
DQ15
A18
Vss
NC
A13
DQ8
Vcc
Vcc
DQ7
A15
Vss
CE#
LB#
DQ6
DQ2
DQ0
A2OE# A1
A6A5
A4UB#
1 2 3 4 5 6
H
G
C
D
E
F
A
B
A12
NC
A17 A7
A16
DQ10
DQ11
DQ12
DQ13 DQ5
DQ4
DQ3
DQ1
ABSOLUTE MAXIMUM RATINGS*
PARAMETER
SYMBOL
RATING
UNIT
Terminal Voltage with Respect to VSS
VTERM
-0.5 to 4.6
V
Operating Temperature
TA
-40 to 85
℃
Storage Temperature
TSTG
-65 to 150
℃
Power Dissipation
PD
1
W
DC Output Current
IOUT
50
mA
Soldering Temperature (under 10 sec)
TSOLDER
260
℃
*Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and
functional operation of the device or any other conditions above those indicated in the operational sections of this specification is not implied.
Exposure to the absolute maximum rating conditions for extended period may affect device reliability.
FEBRUARY 2012
AS7C38098A
512M X 16 BIT HIGH SPEED CMOS SRAM
4
TRUTH TABLE
MODE
CE#
OE#
WE#
LB#
UB#
I/O OPERATION
SUPPLY CURRENT
DQ0-DQ7
DQ8-DQ15
Standby
H
X
X
X
X
High – Z
High – Z
ISB1
Output Disable
L
L
H
X
H
X
X
H
X
H
High – Z
High – Z
High – Z
High – Z
ICC
Read
L
L
L
L
L
L
H
H
H
L
H
L
H
L
L
DOUT
High – Z
DOUT
High – Z
DOUT
DOUT
ICC
Write
L
L
L
X
X
X
L
L
L
L
H
L
H
L
L
DIN
High – Z
DIN
High – Z
DIN
DIN
ICC
Note: H = VIH, L = VIL, X = Don't care.
DC ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
TEST CONDITION
MIN.
TYP. *4
MAX.
UNIT
Supply Voltage
VCC
-10
2.7
3.3
3.6
V
Input High Voltage
VIH*1
2.2
-
VCC+0.3
V
Input Low Voltage
VIL*2
- 0.3
-
0.8
V
Input Leakage Current
ILI
VCC ≧ VIN ≧ VSS
- 1
-
1
µA
Output Leakage
Current
ILO
VCC ≧ VOUT ≧ VSS,
Output Disabled
- 1
-
1
µA
Output High Voltage
VOH
IOH = -8mA
2.4
-
-
V
Output Low Voltage
VOL
IOL =4mA
-
-
0.4
V
Average Operating
Power supply Current
Icc
CE# = VIL , II/O = 0mA
;f=max
-10
-
100
130
mA
Icc1
CE# ≧VCC - 0.2V, Other
pin is at 0.2V or Vcc-0.2V
II/O = 0mA;f=max
-10
80
110
mA
Standby Power
Supply Current
Isb
CE# ≧Vih
Other pin is at Vil or Vih
40
mA
Standby Power
Supply Current
ISB1
CE# ≧VCC - 0.2V;
Other pin is at 0.2V or Vcc-0.2V
3
25
mA
Notes:
1. VIH(max) = VCC + 3.0V for pulse width less than 10ns.
2. VIL(min) = VSS - 3.0V for pulse width less than 10ns.
3. Over/Undershoot specifications are characterized, not 100% tested.
4. Typical values are included for reference only and are not guaranteed or tested.
Typical valued are measured at VCC = VCC(TYP.) and TA = 25℃
FEBRUARY 2012
AS7C38098A
512M X 16 BIT HIGH SPEED CMOS SRAM
5
CAPACITANCE (TA = 25℃, f = 1.0MHz)
PARAMETER
SYMBOL
MIN.
MAX
UNIT
Input Capacitance
CIN
-
8
pF
Input/Output Capacitance
CI/O
-
10
pF
Note : These parameters are guaranteed by device characterization, but not production tested.
AC TEST CONDITIONS
speed
10ns
Input Pulse Levels
0.2V to Vcc-0.2V
Input Rise and Fall Times
3ns
Input and Output Timing Reference Levels
1.5V
Output Load
CL = 30pF + 1TTL,
IOH/IOL = -4mA/8mA
AC ELECTRICAL CHARACTERISTICS
(1) READ CYCLE
PARAMETER
SYM.
AS7C38098A-10
UNIT
MIN.
MAX.
Read Cycle Time
tRC
10
-
ns
Address Access Time
tAA
-
10
ns
Chip Enable Access Time
tACE
-
10
ns
Output Enable Access Time
tOE
-
4.5
ns
Chip Enable to Output in Low-Z
tCLZ*
2
-
ns
Output Enable to Output in Low-Z
tOLZ*
0
-
ns
Chip Disable to Output in High-Z
tCHZ*
-
4
ns
Output Disable to Output in High-Z
tOHZ*
-
4
ns
Output Hold from Address Change
tOH
2
-
ns
LB#, UB# Access Time
tBA
-
4.5
ns
LB#, UB# to High-Z Output
tBHZ*
-
4
ns
LB#, UB# to Low-Z Output
tBLZ*
0
-
ns
(2) WRITE CYCLE
PARAMETER
SYM.
AS7C38098A-10
UNIT
MIN.
MAX.
Write Cycle Time
tWC
10
-
ns
Address Valid to End of Write
tAW
8
-
ns
Chip Enable to End of Write
tCW
8
-
ns
Address Set-up Time
tAS
0
-
ns
Write Pulse Width
tWP
8
-
ns
Write Recovery Time
tWR
0
-
ns
Data to Write Time Overlap
tDW
6
-
ns
Data Hold from End of Write Time
tDH
0
-
ns
Output Active from End of Write
tOW*
2
-
ns
Write to Output in High-Z
tWHZ*
-
4
ns
LB#, UB# Valid to End of Write
tBW
8
-
ns
*These parameters are guaranteed by device characterization, but not production tested.
FEBRUARY 2012
AS7C38098A
512M X 16 BIT HIGH SPEED CMOS SRAM
6
TIMING WAVEFORMS
READ CYCLE 1 (Address Controlled) (1,2)
Dout Data Valid
tOHtAA
Address
tRC
Previous Data Valid
READ CYCLE 2 (CE# and OE# Controlled) (1,3,4,5)
Dout Data Valid High-ZHigh-Z
tCLZ
tOLZ
tCHZ
tOHZ
tOH
OE#
tOE
LB#,UB#
tBHZ
tACE
CE#
tAA
Address
tRC
tBA
tBLZ
Notes :
1.WE#is high for read cycle.
2.Device is continuously selected OE# = low, CE# = low, LB# or UB# = low.
3.Address must be valid prior to or coincident with CE# = low, LB# or UB# = low transition; otherwise tAA is the limiting parameter.
4.tCLZ, tBLZ, tOLZ, tCHZ, tBHZ and tOHZ are specified with CL = 5pF. Transition is measured ±500mV from steady state.
5.At any given temperature and voltage condition, tCHZ is less than tCLZ , tBHZ is less than tBLZ, tOHZ is less than tOLZ.
FEBRUARY 2012
AS7C38098A
512M X 16 BIT HIGH SPEED CMOS SRAM
7
WRITE CYCLE 1 (WE# Controlled) (1,2,3,5,6)
Dout
Din Data Valid
tDW tDH
(4) High-Z
tWHZ
WE#
tWP
tCW
tWRtAS
(4)
TOW
LB#,UB#
CE#
tAW
Address
tWC
tBW
WRITE CYCLE 2 (CE# Controlled) (1,2,5,6)
Dout
Din Data Valid
tDW tDH
(4) High-Z
tWHZ
WE#
LB#,UB#
tCW
CE#
Address
tWRtAS
tAW
tWC
tWP
tBW
FEBRUARY 2012
AS7C38098A
512M X 16 BIT HIGH SPEED CMOS SRAM
8
WRITE CYCLE 3 (LB#,UB# Controlled) (1,2,5,6)
Dout
Din Data Valid
tDW tDH
(4) High-Z
tWHZ
WE#
LB#,UB#
tCW
CE#
Address
tWR
tAS
tAW
tWC
tWP
tBW
Notes :
1.WE#,CE#, LB#, UB# must be high during all address transitions.
2.A write occurs during the overlap of a low CE#, low WE#, LB# or UB# = low.
3.During a WE# controlled write cycle with OE# low, tWP must be greater than tWHZ + tDW to allow the drivers to turn off and data to be placed on the
bus.
4.During this period, I/O pins are in the output state, and input signals must not be applied.
5.If the CE#, LB#, UB# low transition occurs simultaneously with or after WE# low transition, the outputs remain in a high impedance state.
6.tOW and tWHZ are specified with CL = 5pF. Transition is measured ±500mV from steady state.
FEBRUARY 2012
AS7C38098A
512M X 16 BIT HIGH SPEED CMOS SRAM
9
DATA RETENTION CHARACTERISTICS
PARAMETER
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
VCC for Data Retention
VDR
CE# ≧ VCC - 0.2V
1.5
-
3.6
V
Data Retention Current
IDR
VCC = 1.5V
CE# ≧VCC - 0.2V;
Other pin is at 0.2V or
Vcc-0.2V
-
-
3
25
mA
Chip Disable to Data
Retention Time
tCDR
See Data Retention
Waveforms (below)
0
-
-
ns
Recovery Time
tR
tRC*
-
-
ns
tRC* = Read Cycle Time
DATA RETENTION WAVEFORM
Vcc
CE#
VDR ¡Ù 1.5V
CE# ¡Ù Vcc-0.2V
Vcc(min.)
VIH
tRtCDR
VIH
Vcc(min.)
FEBRUARY 2012
AS7C38098A
512M X 16 BIT HIGH SPEED CMOS SRAM
10
PACKAGE OUTLINE DIMENSION
44-pin 400mil TSOP-Ⅱ Package Outline Dimension
SYMBOLS
DIMENSIONS IN MILLMETERS
DIMENSIONS IN MILS
MIN.
NOM.
MAX.
MIN.
NOM.
MAX.
A
-
-
1.20
-
-
47.2
A1
0.05
0.10
0.15
2.0
3.9
5.9
A2
0.95
1.00
1.05
37.4
39.4
41.3
b
0.30
-
0.45
11.8
-
17.7
c
0.12
-
0.21
4.7
-
8.3
D
18.212
18.415
18.618
717
725
733
E
11.506
11.760
12.014
453
463
473
E1
9.957
10.160
10.363
392
400
408
e
-
0.800
-
-
31.5
-
L
0.40
0.50
0.60
15.7
19.7
23.6
ZD
-
0.805
-
-
31.7
-
y
-
-
0.076
-
-
3
Θ
0o
3o
6o
0o
3o
6o
FEBRUARY 2012
AS7C38098A
512M X 16 BIT HIGH SPEED CMOS SRAM
11
48-ball 6mm × 8mm TFBGA Package Outline Dimension
FEBRUARY 2012
AS7C38098A
512M X 16 BIT HIGH SPEED CMOS SRAM
12
ORDERING INFORMATION
BGA : 48-ball 6 mm x 8 mm TFBGA
Industrial -40°C ~ +85°C
AS7C38098A-10BIN
TSOP II : 44-pin 400 mil TSOP II
Industrial -40°C ~ +85°C
AS7C38098A-10TIN