Ordering number : ENN6662 2SB633P/2SD613P PNP / NPN Epitaxial Planar Silicon Transistors 2SB633P / 2SD613P 85V / 6A, AF 35 to 45W Output Applications Features Package Dimensions High breakdown voltage, VCEO 85V, high current 6A. * AF 35 to 45W output. unit : mm 2010C * [2SB633P / 2SD613P] 10.2 3.6 4.5 1.3 18.0 15.1 2.7 6.3 5.1 14.0 5.6 1.2 0.8 0.4 1 : Base 2 : Collector 3 : Emitter 1 2 3 2.7 Specifications 2.55 ( ) : 2SB633P Absolute Maximum Ratings at Ta=25C Parameter Symbol 2.55 SANYO : TO-220 Conditions Ratings Unit Collector-to-Base Voltage VCBO (-)100 Collector-to-Emitter Voltage VCEO (-)85 V Emitter-to-Base Voltage VEBO (-)6 V IC ICP PC (-)6 A (-)10 A 60 W 150 C -55 to +150 C Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Tj Storage Temperature Tstg Tc=25C V Electrical Characteristics at Ta=25C Parameter Collector Cutoff Current Emitter Cutoff Current Symbol ICBO IEBO Conditions Ratings min typ max VCB=(--)40V, IE=0 VEB=(--)4V, IC=0 Unit (--)0.1 mA (--)0.1 mA Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 13001 TS IM TA-3082 No.6662-1/4 2SB633P/2SD613P Continued from preceding page. Parameter Symbol DC Current Gain VCE=(--)5V, IC=(--)1A 40* VCE=(--)5V, IC=(--)3A 20 fT Cob VCE=(--)5V, IC=(--)1A VCB=(--)10V, f=1MHz VCE(sat) IC=(--)4A, IB=(--)0.4A VCE=(--)5V, IC=(--)1A Output Capacitance Base-to-Emitter Voltage VBE Collector-to-Base Breakdown Voltage min hFE1 hFE2 Gain-Bandwidth Product Collector-to-Emitter Saturation Voltage Ratings Conditions V(BR)CBO Collector-to-Emitter Breakdown Voltage V(BR)CEO Emitter-to-Base Breakdown Voltage V(BR)EBO Turn-ON Time Fall Time ton tf Storage Time tstg typ Unit max 320* 15 MHz (150)110 IC=(--)5mA, IE=0 IC=(--)5mA, RBE= IC=(--)50mA, RBE= IE=(--)5mA, IC=0 See specified test circuit. pF (--)2.0 V (--)1.5 V (--)100 V (--)85 V (--)85 V (--)6 V (0.16)0.28 s See specified test circuit. (0.33)0.50 s See specified test circuit. (1.45)3.60 s * : The 2SB633P / 2SD613P are classified by 1A hFE as follows : Rank D E F hFE 60 to 120 100 to 200 160 to 320 Swicthing Time Test Circuit IB1 OUTPUT IB2 1 PW=20s INPUT 20 200VR 51 VCC=20V 1F VBE= --2V 1F 10IB1= --10IB2=IC=1A For PNP, the polarity is reversed. IC -- VCE --5 IC -- VCE 5 2SD613P --1 --4 --80mA Collector Current, IC -- A Collector Current, IC -- A 2SB633P 00mA --60mA --3 --40mA --2 --20mA --10mA --1 0 --10 --20 --30 --40 Collector-to-Emitter Voltage, VCE -- V 80mA 60mA 3 40mA 2 20mA 10mA 1 IB=0 0 100mA 4 IB=0 0 --50 IT02142 0 10 20 30 40 Collector-to-Emitter Voltage, VCE -- V 50 IT02143 No.6662-2/4 2SB633P/2SD613P IC -- VBE 5 VCE=5V 7 Gain-Bandwidth Product, f T -- MHz Collector Current, IC -- A 4 3 2 1 5 3 2 0.6 0.8 1.0 1.2 613P 7 5 3 0.1 2 3 5 7 2 1.0 3 5 Collector Current, IC -- A 7 10 IT02145 Cob -- VCB 1000 VCE=5V f=1MHz 2 7 2SB Output Capacitance, Cob -- pF DC Current Gain, hFE (For PNP minus sign is omitted) IT02144 hFE -- IC 3 633P 10 1.4 Base-to-Emitter Voltage, VBE -- V 2SD 2SB (For PNP minus sign is omitted) 0 0.4 f T -- IC 100 2SB633P / 2SD613P VCE=5V 633 100 P 2SD613 7 P 5 3 2 5 3 2SB 63 2SD 3P 613 P 2 100 7 5 10 0.1 (For PNP minus sign is omitted) 2 3 5 7 (For PNP minus sign is omitted) 2 1.0 3 5 Collector Current, IC -- A 3 1.0 7 10 IT02146 3 5 7 2 10 3 5 Collector-to-Base Voltage, VCB -- V VCE(sat) -- IC 5 2 VBE(sat) -- IC 5 IC / IB=10 7 100 IT02147 IC / IB=10 Base-to-Emitter Saturation Voltage, VBE(sat) -- V Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 3 2 1.0 7 5 P 3 613 2SD 2 63 B 2S 0.1 3P 7 3 2 1.0 P 2SB633 3P 2SD61 7 5 5 (For PNP minus sign is omitted) 3 0.1 2 3 5 7 2 1.0 3 5 Collector Current, IC -- A 10 IT02148 2 3 5 7 2 1.0 3 5 7 10 IT02149 PC -- Tc 70 2SB633P / 2SD613P 2SB633P / 2SD613P ICP=10A 10 (For PNP minus sign is omitted) Collector Current, IC -- A ASO 2 Collector Dissipation, PC -- W 60 IC=6A 7 Collector Current, IC -- A 3 0.1 7 5 DC 3 2 1 10 0m op 0m s s er ati on 1.0 7 5 3 50 40 30 20 10 2 (For PNP minus sign is omitted) 0.1 5 7 3 (For PNP minus sign is omitted) 0 100 2 Collector-to-Emitter Voltage, VCE -- V IT02150 10 2 5 7 0 20 40 60 80 100 120 Case Tamperature, Tc -- C 140 160 IT02151 No.6662-3/4 2SB633P/2SD613P Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of January, 2001. Specifications and information herein are subject to change without notice. PS No.6662-4/4