2SB633P - Sanyo Semiconductor - Datasheet.Directory

2SB633P/2SD613P

No.6662-1/4

Features

• High breakdown voltage, VCEO 85V,

high current 6A.

• AF 35 to 45W output.

Specifications

( ) : 2SB633P

Absolute Maximum Ratings at Ta=25°C

Parameter Symbol Conditions Ratings Unit

Collector-to-Base Voltage VCBO (−)100 V

Collector-to-Emitter Voltage VCEO (−)85 V

Emitter-to-Base Voltage VEBO (−)6 V

Collector Current IC(−)6 A

Collector Current (Pulse) ICP (−)10 A

Collector Dissipation PCTc=25°C60W

Junction Temperature Tj 150 °C

Storage Temperature Tstg −55 to +150 °C

Electrical Characteristics at Ta=25°C

Ratings

Parameter Symbol Conditions min typ max Unit

Collector Cutoff Current ICBO VCB=(--)40V, IE=0 (--)0.1 mA

Emitter Cutoff Current IEBO VEB=(--)4V, IC=0 (--)0.1 mA

Continued on next page.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Ordering number : ENN6662

Package Dimensions

unit : mm

2010C

[2SB633P / 2SD613P]

13001 TS IM TA-3082

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft's

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

1 : Base

2 : Collector

3 : Emitter

SANYO : TO-220

10.25.1

3.6

18.0

5.6

2.7

6.3

15.1

1.2

14.0

0.8

1.3

4.5

0.4

2.55

2.7

123

PNP / NPN Epitaxial Planar Silicon Transistors

2SB633P / 2SD613P

85V / 6A, AF 35 to 45W Output Applications

2SB633P/2SD613P

No.6662-2/4

Continued from preceding page. Ratings

Parameter Symbol Conditions min typ max Unit

DC Current Gain hFE1V

CE=(--)5V, IC=(--)1A 40* 320*

hFE2V

CE=(--)5V, IC=(--)3A 20

Gain-Bandwidth Product fTVCE=(--)5V, IC=(--)1A 15 MHz

Output Capacitance Cob VCB=(--)10V, f=1MHz (150)110 pF

Collector-to-Emitter Saturation Voltage VCE(sat) IC=(--)4A, IB=(--)0.4A (--)2.0 V

Base-to-Emitter Voltage VBE VCE=(--)5V, IC=(--)1A (--)1.5 V

Collector-to-Base Breakdown Voltage V(BR)CBO IC=(--)5mA, IE=0 (--)100 V

Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=(--)5mA, RBE=∞(--)85 V

IC=(--)50mA, RBE=∞(--)85 V

Emitter-to-Base Breakdown Voltage V(BR)EBO IE=(--)5mA, IC=0 (--)6 V

T urn-ON T ime ton See specified test circuit.

(0.16)0.28

µs

Fall Time tfSee specified test circuit.

(0.33)0.50

µs

Storage Time tstg See specified test circuit.

(1.45)3.60

µs

* : The 2SB633P / 2SD613P are classified by 1A hFE as follows :

Rank DE F

FE 60 to 120 100 to 200 160 to 320

Swicthing Time Test Circuit

00 --10 --20 --30 --40 --50

IC -- VCE

Collector-to-Emitter Voltage, VCE -- V

Collector Current, IC -- A

IT02142

--5

--2

--4

--3

--1

IB=0

--60mA

--10mA

--20mA

--40mA

--100mA

--80mA

2SB633P

00 1020304050

-- VCE

Collector-to-Emitter Voltage, VCE -- V

Collector Current, IC -- A

IT02143

IB=0

60mA

100mA

80mA

40mA

20mA

10mA

2SD613P

200VR

1Ω

VCC=20V

VBE= --2V

51Ω

INPUT

OUTPUT

20Ω

1µF1µF

PW=20µs

IB1

IB2

10IB1= --10IB2=IC=1A

For PNP, the polarity is reversed.

2SB633P/2SD613P

No.6662-3/4

PC -- Tc

Collector Dissipation, PC -- W

Case Tamperature, Tc -- °C

04020 60 80 100 120 140 1600

IT02151

VCE(sat) -- IC

Collector Current, IC -- A

Collector-to-Emitter

Saturation Voltage, VCE(sat) -- V

IT02148

1.0

0.1

0.1 23 57 23 57

1.0 10

IC / IB=10

2SD613P

2SB633P

2SB633P / 2SD613P

VBE(sat) -- IC

Collector Current, IC -- A

Base-to-Emitter

Saturation Voltage, VBE(sat) -- V

IT02149

1.0

0.1 23 57723 5 1.0 10

0.1

1.0

10 100

5537722

Collector Current, IC -- A

Collector-to-Emitter Voltage, VCE -- V

ICP=10A

IC=6A

100ms

10ms

IT02150

A S O

DC operation

2SB633P / 2SD613P

IC / IB=10

2SD613P

2SB633P

(For PNP minus sign is omitted) (For PNP minus sign is omitted)

f=1MHz

Cob -- VCB

Collector-to-Base Voltage, VCB -- V

Output Capacitance, Cob -- pF

IT02147

100

1000

1.0 23 57 23 57

10010

hFE -- IC

DC Current Gain, hFE

100

3527 3527

1.0 100.1

Collector Current, IC -- A

IT02146

VCE=5V

2SD613P

2SB633P

2SD613P

2SB633P

(For PNP minus sign is omitted)(For PNP minus sign is omitted)

0.4 0.6 0.8 1.0 1.2 1.4

IC -- VBE

Base-to-Emitter Voltage, VBE -- V

Collector Current, IC -- A

IT02144

2SB633P / 2SD613P

VCE=5V

100

33557722

1.0 100.1

fT -- IC

Collector Current, IC -- A

Gain-Bandwidth Product, fT -- MHz

IT02145

VCE=5V

2SD613P

2SB633P

(For PNP minus sign is omitted) (For PNP minus sign is omitted)

2SB633P/2SD613P

No.6662-4/4

Specifications of any and all SANYO products described or contained herein stipulate the performance,

characteristics, and functions of the described products in the independent state, and are not guarantees

of the performance, characteristics, and functions of the described products as mounted in the customer's

products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,

the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all

semiconductor products fail with some probability. It is possible that these probabilistic failures could

give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,

or that could cause damage to other property. When designing equipment, adopt safety measures so

that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective

circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or

contained herein are controlled under any of applicable local export control laws and regulations,

such products must not be exported without obtaining the export license from the authorities

concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or

mechanical, including photocopying and recording, or any information storage or retrieval system,

or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.

Any and all information described or contained herein are subject to change without notice due to

product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"

for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not

guaranteed for volume production. SANYO believes information herein is accurate and reliable, but

no guarantees are made or implied regarding its use or any infringements of intellectual property rights

or other rights of third parties.

This catalog provides information as of January, 2001. Specifications and information herein are subject

to change without notice.