MICRO-E RATINGS AND CHARACTERISTICS AT 25C n-p-n p-np HIGH-SPEED SWITCHING TRANSISTORS BSV35A BSV35 BSV36 BSV37 Units Parameter Test Conditions Min. | Max. |.Min. | Max. | Min. | Max. Min. | Max. Veso Rated Max. _ 25 ~ 40 _ 15 _ 12 |v VEO (sus) Ic=10mA, Ip=0 15 | 6 12] Jv VER R<S10Q _ 20 | _ |v VEBO Rated Max. _ 5 _- 5 - 4 - 4 |v IcBo Vcp=20V, Ip=0 05]; 0-4 |paA Vep=5V, ig=0 _ _ _ -05 _ pA Vep=SV, 1p=0 _ _ _ _ _ _ _ Q-1 BA hee ic=10MA, Vep=1V 20 40 | 120 _ _ hee I=20mA, Vcg=0-4V ~ - 30 | 150 hre Ic=30mA, Vcg=0-5V _ _ _ - _ 40 150 VCE(sat) Ic=10mA, Ig=1mMA o6| |0-24|/ [0-25] j 0-15} Vv VBE (sat) Ic=10mA, Ig=1mA 07} 09 07 |085 | 0-7 | O89 | 0-75 | 0-98 | Vv fr I=10mA, Vee=10V, f=100MHz 300 | | 500 | | 600+] | 400+ | | MHz Cob Vep=5V, Ip=0, f=-1MHz 6 4) 3) 6 | pF ty Ico=1p1=!p2=10mA _ 25 _ 13 _ _ _ _ ns Ic=lg1=!p2=5mA _ _ _ _ _ 6 _ _ ns fon Ic=10mA, Igy=3mA, lgz=1MmMA _ 40 _ 12 _ 20 _ _ ns 1=30mA, Ip =1 SMA, Ipg=1-5MA = _ _ 60 | nS tort Ic=10mA, Ip, =3mA, Ipa=1 mA _ 75 _ 18 _ 15 _ nS Ic=30mA, Ipy=1-5mA, Ip2=1-5mMA _ _ _ _ _ - _ 30 ns tlc=20MA, Vep=2V *1C=30mA , n-p-n V.H.F. and U.H.F. AMPLIFIER and OSCILLATOR TRANSISTORS BFS46 BFS46A BFS85 BFSsss Units Parameter Test Conditions Min. | Max. | Min. | Max. | Mn. Max. | Min. | Max. VcBo Rated Max. _ 30 30 _ 25 _ 30 Vv VCEO(sus) I=3mA, Ip=0 16 _ 15 _- _ 12 _ 15 VEBO Rated Max. _ 3 _ 3 _ 2:5 ~ 2:5 IcBo Vcg=15V, Ip=0 _ 01 or | 10 _ 0-01] pA hre 1=3mA, Vcg=1V 20 _ 20 _ IG=2mA, Veg=1V _ | 25 150 | 25 | 150 Vee (sat) I=10mA, Ig=1mA 04 | _ lv VCE(sat) Ic=3mA, lp=0-3mMA _ _ _ 0-4 _ Vv VBE(sat) I=10mA, Ip =1mMA _ 1:0 _- - _ _ _ Vv VBE(sat) Ic=3mA, ljg=0-3mA _ 1-0 _ Vv fr Ic=4mA, Veg=10V, f= 100MHz soo | | 6o | | | | | | mn Ic=2mA, Vcg=5V, f=400MHz ~ {1000} | 1000} | MHz Cob Vep=10V, Ip=0, f=140kHz 1:7 _ 1-7 _ 19 _ 1-9 pF Cip Vep=0-5V, I=0, f= 140kHz _ 16] 16 | |375 | | 3-75] pF Spe VcE=12V, Ic =6mA, f= 200MHz 15 (typ) 15 (typ) 12 (typ) 12 (typ) dB N Vce=5V, Ic=1mA, R,=400Q, f=60MHz _ 6 _ 6 _ _ _ dB N VcEe=5V, Ic=2mA, R,=50, f=500MHz _ ~ -/- 6 = 5 | dB HIGH-SPEED SWITCHING DIODES BAW63 BAW63A BAW63B *This series can be supplied Units as Diode Pairs as _ listed Parameter Test Conditions Max. Max. Max. below. VowM Rated Max. 60 30 15 Vv Common Cathode ylp D.C. Per Diode. Rated Max. 200 200 200 mA Connection Basic Type tip D.C. Per Common Lead* 250 250 250 mA Bed BAB lE(pk) Surge Duration 7 sec. 500 500 500 mA BAW67 BAW63B Common Anode IR At Max. P.LV. 1 1 1 WA ommon Connection Vv At Ie=2OOK 110mA KK 1-2 XKXK 1-2 XK 1-2 Vv F F BAW66 BAW63A try** lp=10mA, Va=5V, R_=500. 4 4 4 nS BAW68 BAW63B c Va=1V, f=1MHz 4 4 4 pF Pin connections shown overleaf. tThis Rating based on MAX. DISSIPATION. **Time to recover to 10% of Ip peak. 4IMICRO-E CHARACTERISTICS AT 25C npn p-np MEDIUM CURRENT GENERAL PURPOSE TRANSISTORS BFS38A BFS38 BFS39 BFS40A BFS40 BFS41 Units Parameter Test Conditions Min. | Max. | Min Max Min. | Max. Min. | Max. | Min Max. | Min. | Max. VoBO Rated Max. - 25 _ 45 60 25 _- 45 _ 45 Vv VcEO (sus) Ic=5mA, Igp=0 25 _ 35 45 25 35 45 _ Vv VeBO Rated Max. 5 _ 5 5 _ 5 5 _ 5 Vv tcBo Vcp=VcBo Rated Max, Ip=0 _ 0-5 _ C5 _ -05 _ 0-5 _ 0-5 _ -05 pA leno VeBo=5V, Ic=0 0-5 _ -05 _ -05 _ _ _ uA Vepo=4V, Ic=0 _ _ _ _ _ _ 0-5 - 0-05; 0:05 | pA hee I=100uA, Vep=6V 20 | 20 | _ hee ic=10mA, Vce=6V 50 300 100 300 40 120 50 300 100 300 40 120 hee Ico=50mA, Vce=6V _ _ 50 _ _ _ _ 50 _ _ _ VCE(sat) 1=50mA, igp=5mA _ 0-25 0-25 _ 0.25 _ 0.25 | Vv Ic=10mA, lp=1mA _ 0:35 _ _ _ 0:35 _ _ _ v VBE(sat) Ic =50mA, Ip=SmA _ 1-0 _ 1-0 _ _ _ 1:0 10/]V ic=10mA, Ip=1mA _ 1-0 _ _ _ _ 1-0 _ _ _ Vv fr \co=10mA, Vce=6V, f=100MHz 150 _ 150 _ 150 _ 150 _ 150 150 _ MHz Cob Vep=6V, le=0 5 _ 5 5 5 5 - 5 pF DEVICE TYPES and nearest metal can equivalents npn p-n-p LOW LEVEL AMPLIFICATION BFS36 2N930 BFS37 2N2605 BFS36A 2N929 BFS37A 2N2604 MEDIUM CURRENT BFS38A ZT80 BFS40A ZT180 BFS38 ZT82 BFS40 ZT182 BFS39 ZT83 BFS41 27183 MEDIUM POWER BFS42 2N2221 BFS44 2N2906 BFS43 2N2222A BFS45 2N2907A HIGH-SPEED SWITCHES BSV35A 2N708 BSV37 2N2894 BSV35 2N2369 BSV36 2N2475 V.H.F. AMPLIFIERS BFS46 2N918 BFS46A HIGH-SPEED DIODES BAW63 1N914 BAW63A BAW63B PACKAGE PHYSICAL DATA HIGH SPEED SWITCHING DIODES Pin Connections 2LEAOS 238 78-00 c 2888 __ $ bs rop 8 F 134 Cc t EWP ie pt, lead' q situated in c c F centre . ommon iommon Single cathode anode s 1,3820,20 10 pair pair 1,426" 1 ep b 2,9520,13 37 po ee E B E B oseara B Base CCollector E- Emitter Dimensions in millimetres Ez * Actual size 42