1
SEMICONDUCTORS
SUMMARY
BVCEO = 60V : RSAT = 35m ; IC= 6A
DESCRIPTION
Packaged in the SOT223 outline this new low saturation 60V NPN transistor
offers extremely low on state losses making it ideal for use in DC-DC circuits
and various driving and power management functions.
FEATURES
•Extremely low equivalent on-resistance; RSAT = 35mV at 6A
•6 amps continuous current
•Up to 20 amps peak current
•Very low saturation voltages
•Excellent hFE characteristics up to 10 amps
APPLICATIONS
•Emergency lighting circuits
•Motor driving (including DC fans)
•Solenoid, relay and actuator drivers
•DC Modules
•Backlight Inverters
DEVICE MARKING
ZXTN
2010
ZXTN2010G
ISSUE 2 - MAY 2006
60V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223
DEVICE REEL
SIZE
TAPE
WIDTH
QUANTITY PER
REEL
ZXTN2010GTA 7” 12mm
embossed
1000 units
ZXTN2010GTC 13” 4000 units
ORDERING INFORMATION
PINOUT
TOP VIEW
SOT223
ZXTN2010G
SEMICONDUCTORS
ISSUE 2 - MAY 2006
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PARAMETER SYMBOL VALUE UNIT
Junction to ambient (a) R⍜JA 42 °C/W
NOTES
(a) For a device surface mounted on 52mm x 52mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions.
(b) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
THERMAL RESISTANCE
PARAMETER SYMBOL LIMIT UNIT
Collector-base voltage BVCBO 150 V
Collector-emitter voltage BVCEO 60 V
Emitter-base voltage BVEBO 7V
Continuous collector current (a) IC6A
Peak pulse current ICM 20 A
Power dissipation at TA=25°C (a)
Linear derating factor
PD3.0
24
W
mW/°C
Power dissipation at TA=25°C (b)
Linear derating factor
PD1.6
12.8
W
mW/°C
Operating and storage temperature range Tj,T
stg -55 to +150 °C
ABSOLUTE MAXIMUM RATINGS
ZXTN2010G
SEMICONDUCTORS
ISSUE 2 - MAY 2006
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CHARACTERISTICS
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PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS
Collector-base breakdown voltage BVCBO 150 190 V IC=100␮A
Collector-emitter breakdown voltage BVCER 150 190 V IC=1␮A, RBⱕ1k⍀
Collector-emitter breakdown voltage BVCEO 60 80 V IC=10mA*
Emitter-base breakdown voltage BVEBO 78.1 VI
E=100␮A
Collector cut-off current ICBO 50
0.5
nA
␮A
VCB=120V
VCB=120V,Tamb=100⬚C
Collector cut-off current ICER
Rⱕ1k⍀
100
0.5
nA
␮A
VCB=120V
VCB=120V,Tamb=100⬚C
Emitter cut-off current IEBO 10 nA VEB=6V
Collector-emitter saturation voltage VCE(SAT) 20
45
50
100
210
30
60
70
135
260
mV
mV
mV
mV
mV
IC=100mA, IB=5mA*
IC=1A, IB=100mA*
IC=1A, IB=50mA*
IC=2A, IB=50mA*
IC=6A, IB=300mA*
Base-emitter saturation voltage VBE(SAT) 1000 1100 mV IC=6A, IB=300mA*
Base-emitter turn-on voltage VBE(ON) 940 1050 mV IC=6A, VCE=1V*
Static forward current transfer ratio HFE 100
100
55
20
200
200
105
40
300
IC=10mA, VCE=1V*
IC=2A, VCE=1V*
IC=5A, VCE=1V*
IC=10A, VCE=1V*
Transition frequency fT130 MHz IC=100mA, VCE=10V
f=50MHz
Output capacitance COBO 31 pF VCB=10A, f=1MHz*
Switching times tON
tOFF
42
760
ns IC=1A, VCC=10V,
IB1=IB2=100mA
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
NOTES
(1) Measured under pulsed conditions. Pulse width ⱕ300␮s; duty cycle ⱕ2%.
ZXTN2010G
SEMICONDUCTORS
ISSUE 2 - MAY 2006
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TYPICAL CHARACTERISTICS
ZXTN2010G
SEMICONDUCTORS
Europe
Zetex GmbH
Streitfeldstraße 19
D-81673 München
Germany
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
europe.sales@zetex.com
Americas
Zetex Inc
700 Veterans Memorial Hwy
Hauppauge, NY 11788
USA
Telephone: (1) 631 360 2222
Fax: (1) 631 360 8222
usa.sales@zetex.com
Asia Pacific
Zetex (Asia) Ltd
3701-04 Metroplaza Tower 1
Hing Fong Road, Kwai Fong
Hong Kong
Telephone: (852) 26100 611
Fax: (852) 24250 494
asia.sales@zetex.com
Corporate Headquarters
Zetex Semiconductors plc
Zetex Technology Park
Chadderton, Oldham, OL9 9LL
United Kingdom
Telephone (44) 161 622 4444
Fax: (44) 161 622 4446
hq@zetex.com
These offices are supported by agents and distributors in major countries world-wide.
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced
for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company
reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
For the latest product information, log on to www.zetex.com
© Zetex Semiconductors plc 2005
6
ISSUE 2 - MAY 2006
PACKAGE OUTLINE
Controlling dimensions are in millimeters. Approximate conversions are given in inches
DIM
Millimeters Inches
DIM
Millimeters Inches
Min Max Min Max Min Max Min Max
A - 1.80 - 0.071 e 2.30 BSC 0.0905 BSC
A1 0.02 0.10 0.0008 0.004 e1 4.60 BSC 0.181 BSC
b 0.66 0.84 0.026 0.033 E 6.70 7.30 0.264 0.287
b2 2.90 3.10 0.114 0.122 E1 3.30 3.70 0.130 0.146
C 0.23 0.33 0.009 0.013 L 0.90 - 0.355 -
D 6.30 6.70 0.248 0.264 - ----
PACKAGE DIMENSIONS
PAD LAYOUT DETAILS