BZX84C2V7-G – BZX84C51-G
350mW SURFACE MOUNT ZENER DIODE
Features
! Planar Die Construction L
! 350mW Power Dissipation A
! 2.4 – 39V Nominal Zener Voltage
! 5% Standard Vz Tolerance
! Designed for Surface Mount Application B C
! Plastic Material – UL Recognition Flammability
Classification 94V-O M
E D
H
Mechanical Data
! Case: SOT-23, Molded Plastic K
! Terminals: Plated Leads Solderable per J
MIL-STD-202, Method 208 G
! Polarity: See Diagram
! Weight: 0.008 grams (approx.)
! Marking: Device Code (See Table Next Page)
TOP VIEW
Maximum Ratings @TA=25°C unless otherwise specified
Characteristic Symbol Value Unit
Peak Pulse Power Dissipation at TA = 25°C (Note 1) Pd350 mW
Forward Voltage @ IF = 10mA VF0.9 V
Thermal Resistance Junction to Ambient (Note 1) RJA 357 °C/W
Operating and Storage Temperature Range Tj, TSTG -65 to +150 °C
Note: 1. Valid provided that device terminals are kept at ambient temperature.
TOP VIEW
Data Sheet 5204, Rev. –
SENSITRON
SEMICONDUCTOR
SOT-23
Dim Min Max Min Max
A 0.37 0.51 0.014 0.020
B 1.19 1.40 0.047 0.055
C 2.10 2.50 0.083 0.098
D 0.89 1.05 0.035 0.041
E 0.45 0.61 0.018 0.024
G 1.78 2.05 0.07 0.081
H 2.65 3.05 0.104 0.120
J 0.013 0.15 0.0005 0.006
K 0.89 1.10 0.035 0.043
L 0.45 0.61 0.018 0.024
M 0.076 0.17 0.003 0.007
In mm In inch
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BZX84C2V7-G - BZX84C51-G
350mW SURFACE MOUNT ZENER DIODE
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0
10
20
30
40
50
01 2 3 4 5 6 78910
I , ZENER CURRENT (mA)
Z
V , ZENER VOLTAGE (V)
Fi
g
. 2 Zener Breakdown Characteristics
Z
T = 25°C
jC2V7
C3V3
C3V9
C4V7
C5V6
C6V8
C8V2
Test Current I
5.0mA
Z
0
2
4
6
8
10
10 20 30 40 50 60 70 80 90 100
I , ZENER CURRENT (mA)
Z
V , ZENER VOLTAGE (V)
Fi
g
. 4 Zener Breakdown Characteristics
Z
Tj = 25°C
Test Current I
2mA
Z
C39
C43
C47
C51
C , JUNCTION CAPACITANCE (pF)
j
10
100
1000
10 100
1
V , NOMINAL ZENER VOLTAGE (V)
Fig. 5 Junction Capacitance vs Nominal Zener Voltage
Z
T = 25 °C
j
V=1V
R
V=2V
R
V=1V
R
V=2V
R
400
T , Ambient Temperature, (°C)
A
Fi
g
. 1 Power Deratin
g
Curve
P , Power Dissipation (mW)
d
See Note 1
200
100
300
0
5
00
0100 200
0
10
20
30
0
I , ZENER CURRENT (mA)
Z
V , ZENER VOLTAGE (V)
Fi
g
. 3 Zener Breakdown Characteristics
Z
10 20 30 40
T = 25°C
j
Test current I
5mA
Z
Test current I
2mA
Z
C10
C12
C18
C22
C27
C33 C36
C15
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BZX84C2V7-G – BZX84C51-G
350mW SURFACE MOUNT ZENER DIODE
Data Sheet 5204, Rev. –
SENSITRON
SEMICONDUCTOR
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Data Sheet 5204, Rev. –
SENSITRON
SEMI CONDUCTOR BZX84C2V7-G - BZX84C51-G
350mW SURFACE MOUNT ZENER DIODE
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior not ice to improve
product characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest
version of the datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,
medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by
means of users’ fail-safe precautions or other arrangement .
3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during
operation of the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual
property claims or any other problems that may result from applications of information, products or circuits described in the datasheets.
4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from
use at a value exceeding the absolute maximum rating.
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6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed writ ten permission of
Sensitron Semiconductor.
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