JANTXV2N3506L - Defense Supply Center Columbus

MIL-PRF-19500/349E

28 August 2000

SUPERSEDING

MIL-PRF-19500/349D

12 December 1997

PERFORMANCE SPECIFICATION

SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, SWITCHING

TYPES 2N3506, 2N3506A, 2N3506L, 2N3506AL, 2N3507, 2N3507L, 2N3507A, 2N3507AL,

JAN, JANTX, JANTXV, AND JANS

This specification is approved for use by all Depart-

ments and Agencies of the Department of Defense.

1. SCOPE

1.1 Scope. This specification covers the performance requirements for NPN, silicon, switching transistors. Four

levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

1.2 Physical dimensions. See figure 1 (similar to T0-39).

1.3 Maximum ratings. (1)

VCBO VCEO IC TJ and

TSTG

RθJA

PT (2)

TA = +25°CPT (3)

TC = +25°C2N3506

2N3506A 2N3507

2N3507A 2N3506

2N3506A 2N3507

2N3507A

VEBO

1.0

5.0

V dc

5.0

A dc

3.0

°C

-65 to

+200

°C/W

175

(1) Electrical characteristics for "A", "AL", and "L" suffix devices are identical to non "L" suffix devices unless

otherwise noted.

(2) Derate linearly 5.71 mW/°C above TA = +25°C.

(3) Derate linearly 28.6 mW/°C above TC = +25°C.

1.4 Primary electrical characteristics. (1)

hFE2 (2) hFE4 (2) VCE(sat) |hfe| Cobo ton toff

Limits VCE = 2.0 V dc

IC = 1.5 A dc VCE = 5.0 V dc

IC = 3.0 A dc IC = 1.5 A dc

IB = 150 mA dc f = 20 Mhz

VCE = 5 V dc VCB = 10 V dc

IE = 0 IC = 1.5 A dc

IB = 150 mA dc

2N3506

2N3506A 2N3507

2N3507A 2N3506

2N3506A 2N3507

2N3507A IC = 100 mA dc 100 kHz ≤ f

≤ 1 MHz

Min

Max 40

200 30

150 25 20 V dc

1.0 3

(1) Electrical characteristics for "A", "AL", and "L" suffix devices are identical to non "L" suffix devices unless

otherwise noted.

(2) Pulsed (see 4.5.1).

AMSC N/A FSC5961

DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.

The documentation and process conversion

measures necessary to comply with this

revision shall be completed by

28 November 2000.

INCH-POUND

Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving

this document should be addressed to: (Defense Supply Center, Columbus, ATTN: DSCC/VAC,

Post Office Box 3990, Columbus, OH 43216-5000), by using the Standardization Document Improvement Proposal

(DD Form 1426) appearing at the end of this document or by letter.

MIL-PRF-19500/349E

Dimensions

Symbol Inches Millimeters Notes

CD 0.305 0.335 7.75 8.51

CH 0.240 0.260 6.10 6.60

HD 0.335 0.370 8.51 9.40

LC .200 TP 5.08 TP 6

LD 0.016 0.021 0.41 0.53 7, 8

LL See notes 7, 8, 11,12

LU 0.016 0.019 0.41 0.48 7, 8

L1 0.050 1.27 7, 8

L2 0.250 6.35 7, 8

P0.100 2.54 5

Q0.050 1.27 4

r0.010 0.25 10

TL 0.029 0.045 0.74 1.14 3

TW 0.028 0.034 0.71 0.86 2

α45/ TP 45/ TP 6

NOTES:

1. Dimension are in inches.

2. Metric equivalents are given for general information only.

3. Beyond r (radius) maximum, TH shall be held for a minimum length of .011 (0.28 mm).

4. Dimension TL measured from maximum HD.

5. Body contour optional within zone defined by HD, CD, and Q.

6. Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within

.007 inch (0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at

MMC.

7. Dimension LU applies between L1 and L2. Dimension LD applies between L2 and LL minimum. Diameter is

uncontrolled in L1 and beyond LL minimum.

8. All three leads.

9. The collector shall be internally connected to the case.

10. Dimension r (radius) applies to both inside corners of tab.

11. For 2N3506L, 2N3507L, 2N3506AL, and 2N3507AL, dimension LL shall be 1.5 inches (38.1) mm minimum

and 1.75 inches (44.4 mm) maximum.

12. For 2N3506, 2N3506A, 2N3507, and 2N3507A dimension LL shall be 0.5 inches (12.7) mm minimum and

0.75 inches (19.0 mm) maximum.

13. In accordance with ANSI Y14.5M, diameters are equivalent to φx symbology.

14. Lead 1 = emitter, lead 2 = base, lead 3 = collector.

FIGURE 1. Physical dimensions (similar to TO-39).

MIL-PRF-19500/349E

2. APPLICABLE DOCUMENTS

2.1 Government documents.

2.1.1 Specifications, standards and handbooks. The following specifications, standards, and handbooks form a part

of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those

listed in the issue of the Department of Defense Index of Specifications and Standards (DODISS) and supplement

thereto, cited in the solicitation (see 6.2).

SPECIFICATION

DEPARTMENT OF DEFENSE

MIL-PRF-19500 - Semiconductor Devices, General Specification for.

STANDARD

DEPARTMENT OF DEFENSE

MIL-STD-750 - Test Methods for Semiconductor Devices.

(Unless otherwise indicated, copies of the above specifications, standards, and handbooks are available from the

Defense Automated Printing Service, Building 4D (DPM-DODSSP), 700 Robbins Avenue, Philadelphia, PA 19111-

5094.)

2.2 Order of precedence. In the event of a conflict between the text of this specification and the references cited

herein the text of this specification shall take precedence. Nothing in this specification, however, shall supersede

applicable laws and regulations unless a specific exemption has been obtained.

3. REQUIREMENTS

3.1 General. The requirements for acquiring the product described herein shall consist of this document and

MIL-PRF-19500.

3.2 Qualification. Devices furnished under this specification shall be products that are authorized by the qualifying

activity for listing on the applicable qualified products list before contract award (see 4.2 and 6.2 ).

3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified

in MIL-PRF-19500.

3.4 Interface requirements and physical dimensions. The Interface requirements and physical dimensions shall be as

specified in MIL-PRF-19500, and figure 1 (similar to T0-39).

3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500.

3.5 Marking. Marking shall be in accordance with MIL-PRF-19500.

3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance

characteristics are as specified in 1.3.

3.7 Electrical test requirements. The electrical test requirements shall be group A as specified herein.

3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall

be free from other defects that will affect life, serviceability, or appearance.

MIL-PRF-19500/349E

4. VERIFICATION

4.1 Classification of Inspections. The inspection requirements specified herein are classified as follows:

a. Qualification inspection (see 4.2).

b. Screening (see 4.3)

c. Conformance inspection (see 4.4).

4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500.

4.3 Screening. Screening shall be in accordance with table IV of MIL-PRF-19500, and as specified herein. The

following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein

shall not be acceptable.

Screen (see table IV Measurement

of MIL-PRF-19500) JANS level JANTX and JANTXV levels

3c Thermal impedance (see 4.3.2) Thermal impedance (see 4.3.2)

7hermetic seal (optional) (1)

9ICEX1, hFE2 Not applicable

10 48 hours minimum 48 hours minimum

11 ICEX1; hFE2;

∆ICEX1 = 100 percent of initial value or 200 nA dc,

whichever is greater;

∆hFE2 = 15 percent of initial value

ICEX1 and hFE2

12 See 4.3.1

240 hours minimum See 4.3.1

80 hours minimum

13 Subgroups 2 and 3 of table I herein;

∆ICEX1 = 100 percent of initial value or 200 nA dc,

whichever is greater;

∆hFE2 = 15 percent of initial value.

Subgroup 2 of table I herein;

∆ICEX1 = 100 percent of initial value or 200 nA

dc, whichever is greater;

∆hFE2 = 15 percent of initial value.

(1) Hermetic seal test shall be performed in either screen 7 or screen 14.

4.3.1 Power burn-in conditions. Power burn-in conditions are as follows: TA = Room ambient as defined in 4.5 of

MIL-STD-750; VCB = 10-30 V dc; Power shall be applied to achieve TJ = 135°C minimum and a minimum power

dissipation = 75 % of maximum rated PT (see 1.3).

NOTE: No heat sink or forced air cooling on the devices shall be permitted.

MIL-PRF-19500/349E

4.3.2 Thermal impedance (ZθJX measurements). The ZθJX measurements shall be performed in accordance with

MIL-STD-750, Method 3131.

a. IM measurement current...................10 mA.

b. IH forward heating current ................500 mA (min).

c. tH heating time..................................25 - 30 ms.

d. tmd measurement delay time............60 µs max.

e. VCE collector-emitter voltage ...........10 V dc minimum

The maximum limit for ZθJX under these test conditions are ZθJX (max) = 17.5°C/W.

4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500, and as specified

herein. If alternate screening is being performed in accordance with E.5.3.1d of MIL-PRF-19500, a sample of screened

devices shall be submitted to and pass the requirements of group A1 and A2 inspection only (table VIb, group B,

subgroup 1 is not required to be performed again if group B has already been satisfied in accordance with 4.4.2).

4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500, and table I

herein.

4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for

subgroup testing in table VIa (JANS) of MIL-PRF-19500 and 4.4.2.1. See 4.4.2.2 for JAN, JANTX, and JANTXV group

B testing. Electrical measurements (end-points) shall be in accordance with table I, group A, subgroup 2.

4.4.2.1 Group B inspection, table VIa (JANS) of MIL-PRF-19500.

Subgroup Method Condition

B3 2037 Test condition A

B4 1037 VCB = 10 V dc

B5 1027 VCB = 10 V dc; TA = +125°C ± 25°C for 96 hours adjusted as required according to the

chosen TA to give a TJ = +275°C minimum. Optionally, the test may be conducted for

minimum 216 hours with PT adjusted to achieve TJ = 225°C minimum, sample size (for

option) = 45, c = 0. In this case, the ambient temperature shall be adjusted such that a

minimum 100% of maximum rated PT (see 1.3) is applied to the device under test.

(Note: If a failure occurs, resubmission shall be at the test conditions of the original sample.)

B6 3131 See 4.5.2

MIL-PRF-19500/349E

4.4.2.2 Group B inspection, (JAN, JANTX, and JANTXV). Separate samples may be used for each step. In the

event of a group B failure, the manufacturer may pull a new sample at double size from either the failed assembly lot or

from another assembly lot from the same wafer lot. If the new “assembly lot” option is exercised, the failed assembly lot

shall be scrapped.

Step Method Condition

1 1039 HTRB, test condition A, TA = 150°C, VCB = 80 percent of para 1.3 rated, 340 hours, n = 22

devices, c = 0.

2 1039 Steady-state life: Test condition B, 1,000 hours, VCB = 10 -30 V dc, Power shall be applied to

achieve TJ = 150°C minimum and a minimum power dissipation PD = 75% of PT maximum

rated as defined in 1.3 herein.

or n= 45 devices, Acc = 0

1037 Intermittent operation life: VCB = 10 V dc , 6,000 cycles, ∆TJ ≥ +100°C; forced air cooling

allowed on cooling cycle only. n = 45 devices, c = 0.

3 2037 Bond strength, test condition A, n = 11 wires, c = 0.

4 1032 High-Temperature life (non-operating), TA = +200°C n = 22, c = 0

4.4.2.3 Group B sample selection. Samples selected from group B inspection shall meet all of the following

requirements:

a. Samples shall be selected from each wafer from a die fabrication line that the manufacturer chooses to "certify"

for the die design used in products manufactured to this specification.

b. Must be chosen from an inspection lot that has been submitted to and passed group A conformance

inspection. When the final lead finish is solder or any plating prone to oxidation at high temperature, the

samples for life test (subgroups B3 and B5 for JANS, and group B for JAN, JANTX, and JANTXV) may be

pulled prior to the application of final lead finish.

4.4.2.4 Product acceptable for delivery. The product shall be acceptable for delivery only after the successful

completion of all group B testing and shall be comprised of die meeting the following requirements:

a. Manufactured on the same certified die fabrication line as the sample selected for 4.4.2.3.

b. The die lot was manufactured (using start or completion dates, as the manufacturer selects to consistently

use) within three months following the wafer lot used for sample selection in 4.4.2.3. Group B shall not be

required more than once for any single wafer lot.

MIL-PRF-19500/349E

4.4.3 Group C inspection, Group C inspection shall be conducted in accordance with the conditions specified for

subgroup testing in table VII of MIL-PRF-19500, and in 4.4.3.1 (JANS).and 4.4.3.2 (JAN, JANTX, and JANTXV) herein

for group C testing. Electrical measurements (end points) and delta requirements shall be in accordance with group A,

subgroup 2 herein.

4.4.3.1 Group C inspection, table VII (JANS) of MIL-PRF-19500.

Subgroup Method Condition

C2 2036 Test condition E.

C6 1026 Conditions: 1,000 hours at VCB = 10 - 30 V dc; Power shall be applied to achieve TJ = 150°C

minimum and a minimum power dissipation PD = 75% of PT maximum rated as defined in 1.3

herein.

4.4.3.2 Group C inspection, table VII (JAN, JANTX, and JANTXV) of MIL-PRF-19500.

Subgroup Method Condition

C2 2036 Test condition E.

C6 Not Applicable

4.4.3.3 Group C sample selection. Samples for subgroups in group C shall be chosen at random from any inspection

lot containing the intended package type and lead finish procured to the same specification which is submitted to and

passes group A tests for conformance inspection. Testing of a subgroup using a single device type enclosed in the

intended package type shall be considered as complying with the requirements for that subgroup.

4.4.3.4 Product acceptable for delivery. The product which may be accepted for delivery based a successful

completion of group C testing shall be product of the particular package type with lot inspection identification codes of

the 52 successive weeks beginning with the inspection lot identification code of the successful group C sample (i.e. the

inspection lot identification codes accepted for delivery based on successful group C testing will include those sealed

during the approximate 10 weeks during which the sample was being screened and tested plus those sealed in the 42

weeks following successful completion of group C testing making a total of 52 successive calendar weeks.) A

manufacturer shall not accept product for delivery until after successful completion of the group C testing on product of

the applicable package type with an inspection lot identification code less than 51 weeks prior to the inspection

identification code of the product being considered for acceptance.

MIL-PRF-19500/349E

4.5 Method of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows.

4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750.

4.5.2 Thermal resistance. Thermal resistance measurements shall be conducted in accordance with method 3131 of

MIL-STD-750. The following details shall apply:

a. Minimum collector current magnitude during power application shall be 160 mA dc for RθJC and 32 mA dc

for RθJA.

b. Collector to base voltage magnitude shall be 10 V dc.

c. Reference temperature measuring point shall be the case for RθJC and ambient air for RθJA.

d. Reference point temperature shall be selected with 25° ≤ TR ≤ 35°C and recorded before test is started.

e. Mounting arrangement shall be with heat sink to case for RθJC and without heat sink for RθJA.

f. Maximum limits shall be RθJC = 35°C/W and RθJA = 175°C/W.

NOTE: Unless otherwise specified by the acquiring activity, the choice for measuring RθJC or

RθJA will satisfy the requirements of this test.

MIL-PRF-19500/349E

TABLE I. Group A inspection .

Inspection 1/, 2/MIL-STD-750 Limit Unit

Method Conditions Symbol Min Max

Subgroup 1 3/

Visual and mechanical 4/

examination 2071 n = 45 devices, c = 0

Solderability 4/, 6/

Resistance to solvents

4/, 5/, 6/

2026

1022

n = 15 leads, c = 0

n = 15 devices, c = 0

Temp Cycling 4/, 6/1051 Test condition C, 25 cycles.

n = 22 devices, c = 0

Hermetic Seal 6/1071 n = 22 devices, c = 0

Fine leak

Gross leak

Electrical measurements 6/Group A, subgroup 2

Bond strength 4/, 6/2037 Precondition TA = +250°C at t = 24

hrs or TA = 300°C at t = 2 hrs

n = 11 wires, c = 0

Subgroup 2

Breakdown voltage collector

to base 3001 Bias condition D, IC = 100 µA dc V(BR)CBO

2N3506 60 V dc

2N3507 80 V dc

Breakdown voltage emitter to

base 3026 Bias condition D, IE = 10 µA dc V(BR)EBO 5V dc

Breakdown voltage collector

to emitter 3011 Bias condition D, IC = 10 mA dc,

pulsed (see 4.5.1) V(BR)CEO

2N3506 40 V dc

2N3507 50 V dc

Collector to emitter cutoff

current 3041 Bias condition A, VEB = 4 V dc ICEX1 1µA dc

2N3506 VCE = 40 V dc

2N3507 VCE = 60 V dc

Forward-current transfer ratio 3076 VCE = 1 V dc, IC = 500 mA dc,

pulsed (see 4.5.1) hFE1

2N3506 50 250

2N3507 35 175

Forward-current transfer ratio 3076 VCE = 2 V dc, IC = 1.5 A dc, pulsed

(see 4.5.1) hFE2

2N3506 40 200

2N3507 30 150

See footnotes at end of table.

MIL-PRF-19500/349E

TABLE I. Group A inspection .

Inspection 1/, 2/MIL-STD-750 Limit Unit

Method Conditions Symbol Min Max

Subgroup 2 - Continued

Forward-current transfer ratio 3076 VCE = 3 V dc, IC = 2.5 A dc, pulsed (see

4.5.1) hFE3

2N3506 30

2N3507 25

Forward-current transfer ratio 3076 VCE = 5 V dc, IC = 3.0 A dc, pulsed (see

4.5.1) hFE4

2N3506 25

2N3507 20

Saturation voltage and

resistance 3071 IC = 500 mA dc, IB = 50 mA dc, pulsed (see

4.5.1) VCE(sat)1 0.5 V dc

Saturation voltage and

resistance 3071 IC = 1.5 A dc, IB = 150 mA dc, pulsed (see

4.5.1) VCE(sat)2 1.0 V dc

Saturation voltage and

resistance 3071 IC = 2.5 A dc, IB = 250 mA dc, pulsed (see

4.5.1) VCE(sat)3 1.5 V dc

Base to emitter saturated

voltage 3066 Test condition A, IC = 500 mA dc, IB = 50

mA dc, pulsed (see 4.5.1) VBE(sat)1 1.0 V dc

Base to emitter saturated

voltage 3066 Test condition A, IC = 1.5 A dc, IB = 150 mA

dc, pulsed (see 4.5.1) VBE(sat)2 0.8 1.3 V dc

Base to emitter saturated

voltage 3066 Test condition A, IC = 2.5 A dc, IB = 250 mA

dc, pulsed (see 4.5.1) VBE(sat)3 2.0 V dc

Subgroup 3

High-temperature operation TA = +150°C

Collector to emitter cutoff

current 3041 Bias condition A, VEB = 4 V dc ICEX2 1.5 mA dc

2N3506 VCE = 40 V dc

2N3507 VCE = 60 V dc

Low-temperature operation TA = -55°C

Forward-current transfer ratio 3076 IC = 500 mA dc, pulsed (see 4.5.1) hFE5

2N3506, 2N3506L VCE = 1.0 V dc 25

2N3507, 2N3507L VCE = 1.0 V dc 17

2N3506A, 2N3506AL VCE = 2.0 V dc 25

2N3507A, 2N3507AL VCE = 2.0 V dc 17

See footnote at end of table.

MIL-PRF-19500/349E

TABLE I. Group A inspection .

Inspection 1/, 2/MIL-STD-750 Limit Unit

Method Conditions Symbol Min Max

Subgroup 4

Small-signal short- circuit

forward-current transfer ratio 3206 VCE = 5 V dc, IC = 100 mA dc, f = 20 MHz |hfe|3 15

Open circuit output capacitance 3236 VCB = 10 V dc, IE = 0,

100 kHz ≤ f ≤ 1 MHz Cobo 40 pF

Input capacitance (output open-

circuited) 3240 VEB = 3 V dc, IC = 0,

100 kHz ≤ f ≤ 1 MHz Cibo 300 pF

Pulse response:

Delay time 3251 Test condition A, IC = 1.5 A dc,

IB1 = 150 mA dc, (see figure 3) td15 ns

Rise time 3251 Test condition A, IC = 1.5 A dc,

IB1 = 150 mA dc, (see figure 3) tr30 ns

Storage time 3251 Test condition A, IC = 1.5 A dc,

IB1 = IB2 = 150 mA dc, (see figure 4) tS55 ns

Fall time 3251 Test condition A, IC = 1.5 A dc,

IB1 = IB2 = 150 mA dc,(see figure 4) tf35 ns

1/For sampling plan see MIL-PRF-19500.

2/Electrical characteristics for "A", "AL", and "L" suffix devices are identical to non suffix devices unless otherwise

noted.

3/For resubmission of failed subgroup A1, double the sample size of the failed test or sequence of tests. A failure

in group A, subgroup 1 shall not require retest of the entire subgroup. Only the failed test shall be rerun upon

submission.

4/Separate samples may be used.

5/Not required for laser marked devices.

6/Not required for JANS devices.

MIL-PRF-19500/349E

FIGURE 3. Equivalent circuit for measuring delay and rise times.

FIGURE 4. Equivalent circuit for measuring storage and fall times.

10 ≤ PW ≤ 500µs

MIL-PRF-19500/349E

5. PACKAGING

5.1 Packaging. For acquisition purposes, the packaging requirements shall be as specified in the contract or order

(see 6.2). When actual packaging of materiel is to be performed by DoD personnel, these personnel need to contact

the responsible packaging activity to ascertain requisite packaging requirements. Packaging requirements are

maintained by the Inventory Control Point's packaging activity within the Military Department or Defense Agency, or

within the Military Department's System Command. Packaging data retrieval is available from the managing Military

Department's or Defense Agency's automated packaging files, CD-ROM products, or by contacting the responsible

packaging activity.

6. NOTES

(This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.)

6.1 Intended use. The notes specified in MIL-PRF-19500 are applicable to this specification.

6.2 Acquisition requirements. Acquisition documents should specify the following:

a. Lead finish as specified (see 3.3.1).

b. Type designation and product assurance level.

6.3 Substitution information. The 2N3506A and 2N3507A may be substituted for the 2N3506 and 2N3507 (and L

suffix versions) (respectively) at the discretion of the procuring activity."

6.4 Changes from previous issue. Marginal notations are not used in this revision to identify changes with respect to

the previous issue due to the extensiveness of the changes.

6.5 Qualification. With respect to products requiring qualification, awards will be made only for products which are, at

the time of award of contract, qualified for inclusion in Qualified Manufacturers' List (QML) whether or not such products

have actually been so listed by that date. The attention of the contractors is called to these requirements, and

manufacturers are urged to arrange to have the products that they propose to offer to the Federal Government tested for

qualification in order that they may be eligible to be awarded contracts or orders for the products covered by this

specification. Information pertaining to qualification of products may be obtained from Defense Supply Center,

Columbus, ATTN: DSCC-VQE, P.O. Box 3990, Columbus, Ohio, 43216-5000.

Custodians: Preparing activity:

Army - CR DLA - CC

Navy - EC

Air Force - 11 (Project 5961-2308)

NASA - NA

Review activities:

Army - AR, AV, MI

Navy - AS, CG, MC

Air Force - 13, 19

STANDARDIZATION DOCUMENT IMPROVEMENT PROPOSAL

INSTRUCTIONS

1. The preparing activity must complete blocks 1, 2, 3, and 8. In block 1, both the document number and revision

letter should be given.

2. The submitter of this form must complete blocks 4, 5, 6, and 7.

3. The preparing activity must provide a reply within 30 days from receipt of the form.

NOTE: This form may not be used to request copies of documents, nor to request waivers, or clarification of requirements on current

contracts. Comments submitted on this form do not constitute or imply authorization to waive any portion of the referenced

document(s) or to amend contractual requirements.

I RECOMMEND A CHANGE: 1. DOCUMENT NUMBER

MIL-PRF-19500/349E 2. DOCUMENT DATE

28 August 2000

3. DOCUMENT TITLE

SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, SWITCHING TYPES 2N3506,

2N3506A, 2N3506L, 2N3506AL, 2N3507, 2N3507L, 2N3507A, 2N3507AL, JAN, JANTX, JANTXV, AND JANS

4. NATURE OF CHANGE (Identify paragraph number and include proposed rewrite, if possible. Attach extra sheets as needed.)

5. REASON FOR RECOMMENDATION

6. SUBMITTER

a. NAME (Last, First, Middle initial) b. ORGANIZATION

c. ADDRESS (Include Zip Code) d. TELEPHONE (Include Area Code)

COMMERCIAL

DSN

FAX

7. DATE SUBMITTED

8. PREPARING ACTIVITY

a. Point of Contact

Alan Barone

b. TELEPHONE

Commercial DSN FAX EMAIL

614-692-0510 850-0510 614-692-6939 alan_barone@dscc.dla.mil

c. ADDRESS

Defense Supply Center Columbus, ATTN:

DSCC-VAC, 3990 East Broad Street,

Columbus, OH 43213-1199

IF YOU DO NOT RECEIVE A REPLY WITHIN 45 DAYS, CONTACT:

Defense Standardization Program Office (DLSC-LM)

8725 John J. Kingman, Suite 2533, Fort Belvoir, VA 22060-6221

Telephone (703) 767-6888 DSN 427-6888

DD Form 1426, Feb 1999 (EG) Previous editions are obsolete WHS/DIOR, Feb 99