3LP01M
No.6139-1/7
Features
• Low ON-resistance
•
High-speed switching
•
2.5V drive
Specifi cations
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage VDSS --30 V
Gate-to-Source Voltage VGSS ±10 V
Drain Current (DC) ID--0.1 A
Drain Current (Pulse) IDP PW≤10μs, duty cycle≤1% --0.4 A
Allowable Power Dissipation PD0.15 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg --55 to +150 °C
This product is designed to “ESD immunity < 200V*”, so please take care when handling.
* Machine Model
Package Dimensions
unit : mm (typ)
7023A-010
Ordering number : EN6139C
71 112 TKIM/40908 TIIM TC-00001304/32406PE MSIM TB-00002153/90100 TSIM TA-2006
3LP01M
P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
http://semicon.sanyo.com/en/network
Product & Package Information
• Package : MCP
• JEITA, JEDEC : SC-70, SOT-323
•
Minimum Packing Quantity
: 3,000 pcs./reel
Packing Type: TL Marking
Electrical Connection
SANYO Semiconductors
DATA SHEET
XA
LOT No.
LOT No.
1
2
3
TL
1 : Gate
2 : Source
3 : Drain
SANYO : MCP
3
12
2.0
0.425
0.425
0.3
0.65
2.1
0.9
1.25
0.3
0.2
0 to 0.08
0.15
3LP01M-TL-E
3LP01M-TL-H
3LP01M
No.6139-2/7
Electrical Characteristics at Ta=25°C
Parameter Symbol Conditions Ratings Unit
min typ max
Drain-to-Source Breakdown Voltage V(BR)DSS ID= --1mA, VGS=0V --30 V
Zero-Gate Voltage Drain Current IDSS VDS= --30V, VGS=0V --1 μA
Gate-to-Source Leakage Current IGSS VGS=±8V, VDS=0V ±10 μA
Cutoff Voltage VGS(off) VDS= --10V, ID= --100μA --0.4 --1.4 V
Forward Transfer Admittance | yfs |VDS= --10V, ID= --50mA 80 110 mS
Static Drain-to-Source On-State Resistance
RDS(on)1 ID= --50mA, VGS= --4V 8 10.4 Ω
RDS(on)2 ID= --30mA, VGS= --2.5V 11 15.4 Ω
RDS(on)3 ID= --1mA, VGS= --1.5V 27 54 Ω
Input Capacitance Ciss VDS= --10V, f=1MHz 7.5 pF
Output Capacitance Coss 5.7 pF
Reverse Transfer Capacitance Crss 1.8 pF
Turn-ON Delay Time td(on)
See specifi ed Test Circuit.
24 ns
Rise Time tr 55 ns
Turn-OFF Delay Time td(off) 120 ns
Fall Time tf130 ns
Total Gate Charge Qg VDS= --10V, VGS= --10V, ID= --100mA 1.43 nC
Gate-to-Source Charge Qgs 0.18 nC
Gate-to-Drain “Miller” Charge Qgd 0.25 nC
Diode Forward Voltage VSD IS= --100mA, VGS=0V --0.83 --1.2 V
Switching Time Test Circuit
Ordering Information
Device Package Shipping memo
3LP01M-TL-E MCP 3,000pcs./reel Pb Free
3LP01M-TL-H MCP 3,000pcs./reel Pb Free and Halogen Free
PW=10μs
D.C.≤1%
0V
--4V
VIN
P.G 50Ω
G
D
ID= --50mA
RL=300Ω
VDD= --15V
VOUT
3LP01M
S
VIN
3LP01M
No.6139-3/7
0
0
--0.01
--0.02
--0.03
--0.04
--0.06
--0.07
--0.08
--0.09
--0.10
--0.4
--0.05
--0.8 --1.2 --1.6 --2.0--0.2 --0.6 --1.0 --1.4 --1.8
ID -- VDS
VGS= --1.5V
--3.5V
--6.0V
--2.0V
--4.0V
--3.0V
--2.5V
0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --4.0--3.5
0
--0.02
--0.04
--0.06
--0.08
--0.10
--0.12
--0.14
--0.16
--0.18
--0.20 ID -- VGS
VDS= --10V
IT00077 IT00078
Ta= --25°C
25°C
75°C
Drain Current, ID -- A
Drain Current, ID -- A
Drain-to-Source Voltage, VDS -- V Gate-to-Source Voltage, VGS -- V
--60
4
2--40
6
--20
8
10
0
12
14
20 40
16
60
18
80 100 120 140 160
VGS= --2.5V, ID= --30mA
VGS= --4.0V, ID= --50mA
IT00083 IT00084
IT00081 IT00082
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
Ambient Temperature, Ta -- °C
RDS(on) -- Ta
Drain Current, ID -- A
Drain Current, ID -- A
RDS(on) -- ID
Drain Current, ID -- mA
RDS(on) -- ID
--0.01
0.01 --0.1
1.0
7
5
3
2
7
5
3
2
0.1
327532
VDS= --10V
Ta= --25°C
25°C
75°C
--0.01
1.0 --0.1
10
7
5
3
2
100
7
5
3
2
327532
VGS= --2.5V
--0.1 --1.0
1000
7
5
3
2
100
7
5
3
2
10 2323 57
VGS= --1.5V
--25°C
--25°C
25°C
Ta=75°C
Ta=75°C25°C
0
0--1 --2 --3
5
--4
10
--5
15
20
25
--6
30
--7 --8 --9 --10
RDS(on) -- VGS Ta=25°C
ID= --30mA --50mA
RDS(on) -- ID
IT00079 IT00080
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
Gate-to-Source Voltage, VGS -- V Drain Current, ID -- A
--0.01
1.0 --0.1
23 57 23
100
7
5
3
2
10
7
5
3
2
VGS= --4V
Ta=75°C25°C
--25°C
| yfs | -- ID
Forward T ransfer Admittance, | yfs | -- S
3LP01M
No.6139-4/7
IT00085 --0.01 23 57
10
7
5
3
2
7
5
3
2
--0.1
1000
100
IT00086
VDD= --15V
VGS= --4V
tf
tr
td(off)
td(on)
Diode Forward Voltage, VSD -- V
Source Current, IS -- A
IS -- VSD
Drain Current, ID -- A
SW Time -- ID
Switching Time, SW Time -- ns
--0.5 --0.6 --0.7 --0.8 --0.9 --1.0 --1.1
--0.01
--0.1
3
2
7
5
3
2
VGS=0V
--25
°
C
25°C
Ta=75°C
0
0.20
0.10
0.05
0.15
0 40 120 1608020 100 14060
IT02381
Ambient Temperature, Ta -- °C
PD -- Ta
Allowable Power Dissipation, PD -- W
0
0
--1
--2
--3
--4
--5
--6
--7
--8
1.60.6 0.8 1.0 1.2 1.40.2 0.4
--9
--10 VDS= --10V
ID= --0.1A
0
1.0 --5
10
7
5
3
2
7
5
3
2
--10 --15
100
--20 --30--25
f=1MHz
IT00087 IT00088
Ciss
Coss
Crss
Drain-to-Source Voltage, VDS -- V
Ciss, Coss, Crss -- VDS
Ciss, Coss, Crss -- pF
Total Gate Charge, Qg -- nC
VGS -- Qg
Gate-to-Sourse Voltage, VGS -- V
3LP01M
No.6139-5/7
Embossed Taping Specifi cation
3LP01M-TL-E, 3LP01M-TL-H
3LP01M
No.6139-6/7
Outline Drawing Land Pattern Example
3LP01M-TL-E, 3LP01M-TL-H
Mass (g) Unit
0.006
* For reference
mm Unit: mm
0.65 0.65
2.1
0.7
1.0
3LP01M
No.6139-7/7PS
This catalog provides information as of July, 2012. Specifi cations and information herein are subject
to change without notice.
Note on usage : Since the 3LP01M is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment. The products mentioned herein
shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they
grant any guarantee thereof. If you should intend to use our products for new introduction or other application
different from current conditions on the usage of automotive device, communication device, office equipment,
industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.)
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Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer's
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condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
Co.,Ltd. products described or contained herein.
Regarding monolithic semiconductors, if you should intend to use this IC continuously under high temperature,
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