ZXMP6A18DN8
Document Number DS33592 Rev 3 - 2
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ZXMP6A18DN8
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DUAL P-CHANNEL 60V ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS RDS(on) Max ID
T
A
= +25°C
-60V 55mΩ @ VGS = -10V -4.8A
Description
This MOSFET is designed to minimize the on-state resistance and yet
maintain superior switching performance, making it ideal for high-
efficiency power management applications.
Applications
• Disconnect Switches
• Motor Drive
Features
• Low On-Resistance
• Fast Switching Speed
• Low Threshold
• Low Gate Drive
• Low Profile SOIC Package
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
• PPAP capable (Note 4)
Mechanical Data
• Case: SO-8
• Case Material: Molded Plastic, “Green” Molding Compound;
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Matte Tin Finish; Solderable per MIL-STD-202,
Method 208
• Weight: 0.074 grams (Approximate)
Ordering Information (Notes 4 & 5)
Product Compliance Case Quantity per reel
ZXMP6A18DN8TA Standard SO-8 500
ZXMP6A18DN8TC Standard SO-8 2,500
ZXMP6A18DN8QTC Automotive SO-8 2,500
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally
the same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_compliance_definitions/.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
SO-8
Equivalent Circuit
ZXMP6A18D = Product Type Marking Code
YYWW = Date Code Marking
YY = Year (ex: 11 = 2011)
WW = Week (01 - 53)
Top View
SO-8
Top View
D1S1
G1
S2
G2
D1
D2
D2
D
2
S2
G2
D
1
S1
G
1
6A18D
ZXMP6A18DN8
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Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Drain-Source Voltage VDSS -60 V
Gate-Source Voltage VGS ±20 V
Continuous Drain Current (VGS = 10V)
(Notes 7 & 9)
ID
-4.8
A
TA = +70°C
(Notes 7 & 9) -3.8
(Notes 6 & 9) -3.7
Pulsed Drain Current (Notes 8) IDM -23 A
Continuous Source Current (Body Diode) (Notes 7) IS -3.3 A
Pulsed Source Current (Body Diode) (Notes 8) ISM -23 A
Single Pulsed Avalanche Energy (L = 0.1mH) (Note 11) EAS 38.2 mJ
Single Pulsed Avalanche Current (L = 0.1mH) (Note 11) IAS 27.6 A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Power Dissipation
Linear Derating Factor
(Notes 6 & 9)
PD
1.25
10
W
mW/°C
(Notes 6 & 10) 1.8
14
(Notes 7 & 9) 2.1
17
Thermal Resistance, Junction to Ambient
(Notes 6 & 9)
RθJA
+100
°C/W
(Notes 7 & 10) +69
(Notes 7 & 9) +58
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C
Notes: 6. For a dual device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 1oz copper in still air conditions.
7. For a dual device surface mounted FR4 PCB measured at t ≤ 10 sec.
8. Repetitive rating 25mm x 25mm x 1.6mm FR4 PCB, D = 0.02, pulse width = 300µs – pulse width limited by maximum junction temperature.
9. For a dual device with one active die.
10. For a device with two active die running at equal power.
11. IAR and EAR rating are based on low frequency and duty cycles to keep TJ = +25°C.
ZXMP6A18DN8
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Electrical Characteristics (@TA= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage BVDSS -60 ⎯ ⎯ V ID = -250µA, VGS = 0V
Zero Gate Voltage Drain Current IDSS ⎯ ⎯ -1 µA
VDS = -60V, VGS = 0V
Gate-Source Leakage IGSS ⎯ ⎯ ±100 nA VGS = ±20V, VDS = 0V
ON CHARACTERISTICS
Gate Threshold Voltage VGS(th) -1 ⎯ ⎯ V ID = -250µA, VDS = VGS
Static Drain-Source On-Resistance (Note 12) RDS(ON) ⎯ ⎯ 0.055 Ω VGS = -10V, ID = -3.5A
0.08 VGS = -4.5V, ID = -2.9A
Forward Transconductance (Notes 12 & 14) gfs ⎯ 8.7 ⎯ S VDS = -15V, ID = -3.5A
Diode Forward Voltage (Note 12) VSD ⎯ -0.85 -0.95 V
IS = -4.2A, VGS = 0V, TJ = +25°C
Reverse Recovery Time (Note 14) trr 37 ⎯ ns IF = -2.1A, di/dt = 100A/µs, TJ = +25°C
Reverse Recovery Charge (Note 14) Qrr ⎯ 56 ⎯ nC
DYNAMIC CHARACTERISTICS (Note 14)
Input Capacitance Ciss ⎯ 1580 ⎯ pF
VDS = -30V, VGS = 0V
f = 1MHz
Output Capacitance Coss ⎯ 160 ⎯ pF
Reverse Transfer Capacitance Crss ⎯ 140 ⎯ pF
Total Gate Charge (Note 13) Qg ⎯ 23 ⎯ nC VGS = -5V
VDS = -30V
ID = -3.5A
Total Gate Charge (Note 13) Qg ⎯ 44 ⎯ nC
VGS = -10V
Gate-Source Charge (Note 13) Qgs ⎯ 3.9 ⎯ nC
Gate-Drain Charge (Note 13) Qgd ⎯ 9.8 ⎯ nC
Turn-On Delay Time (Note 13) tD(on) ⎯ 4.6 ⎯ ns
VDD = -30V, VGS = -10V
ID = -1A, RG ≅ 6.0Ω
Turn-On Rise Time (Note 13) tr ⎯ 5.8 ⎯ ns
Turn-Off Delay Time (Note 13) tD(off) ⎯ 55 ⎯ ns
Turn-Off Fall Time (Note 13) tf ⎯ 23 ⎯ ns
Notes: 12. Measured under pulsed conditions. Pulse width ≤ 300µs; duty cycle ≤ 2%.
13. Switching characteristics are independent of operating junction temperatures.
14. For design aid only, not subject to production testing.
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Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
SO-8
SO-8
Dim Min Max
A - 1.75
A1 0.10 0.20
A2 1.30 1.50
A3 0.15 0.25
b 0.3 0.5
D 4.85 4.95
E 5.90 6.10
E1 3.85 3.95
e 1.27 Typ
h - 0.35
L 0.62 0.82
θ 0° 8°
All Dimensions in mm
Dimensions Value (in mm)
X 0.60
Y 1.55
C1 5.4
C2 1.27
Gauge Plane
Seating Plane
Detail ‘A’
Detail ‘A’
E
E1
h
L
D
eb
A2
A1
A
45
°
7
°~
9
°
A3
0.254
X
C1
C2
Y
ZXMP6A18DN8
Document Number DS33592 Rev 3 - 2
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ADVANCE INFORMATION
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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