Semiconductor Components Industries, LLC, 2002
February, 2002 – Rev. 2 1Publication Order Number:
1N5913B/D
1N5913B Series
3 Watt DO-41 Surmetic 30
Zener Voltage Regulators
This is a complete series of 3 Watt Zener diodes with limits and
excellent operating characteristics that reflect the superior capabilities
of silicon–oxide passivated junctions. All this in an axial–lead,
transfer–molded plastic package that offers protection in all common
environmental conditions.
Specification Features:
Zener Voltage Range – 3.3 V to 200 V
ESD Rating of Class 3 (>16 KV) per Human Body Model
Surge Rating of 98 W @ 1 ms
Maximum Limits Guaranteed on up to Six Electrical Parameters
Package No Larger than the Conventional 1 Watt Package
Mechanical Characteristics:
CASE: Void free, transfer–molded, thermosetting plastic
FINISH: All external surfaces are corrosion resistant and leads are
readily solderable
MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES:
230°C, 1/16 from the case for 10 seconds
POLARITY: Cathode indicated by polarity band
MOUNTING POSITION: Any
MAXIMUM RATINGS
Rating Symbol Value Unit
Max. Steady State Power Dissipation
@ TL = 75°C, Lead Length = 3/8
Derate above 75°C
PD3
24
W
mW/°C
Steady State Power Dissipation
@ TA = 50°C
Derate above 50°C
PD1
6.67
W
mW/°C
Operating and Storage
Temperature Range TJ, Tstg –65 to
+200 °C
Device Package Shipping
ORDERING INFORMATION
1N59xxB Axial Lead 2000 Units/Box
1N59xxBRL Axial Lead
AXIAL LEAD
CASE 59
PLASTIC
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6000/Tape & Reel
Cathode Anode
Polarity band up with cathode lead off first
Polarity band down with cathode lead off first
L
1N59
xxB
YYWW
L = Assembly Location
1N59xxB = Device Code
= (See Table Next Page)
YY = Year
WW = Work Week
MARKING DIAGRAM
1N59xxBRR1 Axial Lead 2000/Tape & Reel
1N59xxBRR2 Axial Lead 2000/Tape & Reel
Devices listed in
bold, italic
are ON Semiconductor
Preferred devices. Preferred devices are recommended
choices for future use and best overall value.
Zener Voltage Regulator
IF
V
I
IR
IZT
VR
VZVF
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ELECTRICAL CHARACTERISTICS
(TL = 30°C unless otherwise noted,
VF = 1.5 V Max @ IF = 200 mAdc for all types)
Symbol Parameter
VZReverse Zener Voltage @ IZT
IZT Reverse Current
ZZT Maximum Zener Impedance @ IZT
IZK Reverse Current
ZZK Maximum Zener Impedance @ IZK
IRReverse Leakage Current @ VR
VRBreakdown Voltage
IFForward Current
VFForward Voltage @ IF
IZM Maximum DC Zener Current
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ELECTRICAL CHARACTERISTICS (TL = 30°C unless otherwise noted, VF = 1.5 V Max @ IF = 200 mAdc for all types)
Zener Voltage (Note 2) Zener Impedance (Note 3) Leakage Current
Device
Device
VZ (Volts) @ IZT ZZT @ IZT ZZK @ IZK IR @ VRIZM
D
ev
i
ce
(Note 1)
D
ev
i
ce
Marking Min Nom Max mA mA µA Max Volts mA
1N5913B 1N5913B 3.14 3.3 3.47 113.6 10 500 1 100 1 454
1N5917B 1N5917B 4.47 4.7 4.94 79.8 5 500 1 5 1.5 319
1N5919B 1N5919B 5.32 5.6 5.88 66.9 2 250 1 5 3 267
1N5920B 1N5920B 5.89 6.2 6.51 60.5 2 200 1 5 4 241
1N5921B 1N5921B 6.46 6.8 7.14 55.1 2.5 200 1 5 5.2 220
1N5923B 1N5923B 7.79 8.2 8.61 45.7 3.5 400 0.5 5 6.5 182
1N5924B 1N5924B 8.65 9.1 9.56 41.2 4 500 0.5 5 7 164
1N5925B 1N5925B 9.50 10 10.50 37.5 4.5 500 0.25 5 8 150
1N5926B 1N5926B 10.45 11 11.55 34.1 5.5 550 0.25 1 8.4 136
1N5927B 1N5927B 11.40 12 12.60 31.2 6.5 550 0.25 1 9.1 125
1N5929B 1N5929B 14.25 15 15.75 25.0 9 600 0.25 1 11.4 100
1N5930B 1N5930B 15.20 16 16.80 23.4 10 600 0.25 1 12.2 93
1N5931B 1N5931B 17.10 18 18.90 20.8 12 650 0.25 1 13.7 83
1N5932B 1N5932B 19.00 20 21.00 18.7 14 650 0.25 1 15.2 75
1N5933B 1N5933B 20.90 22 23.10 17.0 17.5 650 0.25 1 16.7 68
1N5934B 1N5934B 22.80 24 25.20 15.6 19 700 0.25 1 18.2 62
1N5935B 1N5935B 25.65 27 28.35 13.9 23 700 0.25 1 20.6 55
1N5936B 1N5936B 28.50 30 31.50 12.5 28 750 0.25 1 22.8 50
1N5937B 1N5937B 31.35 33 34.65 11.4 33 800 0.25 1 25.1 45
1N5938B 1N5938B 34.20 36 37.80 10.4 38 850 0.25 1 27.4 41
1N5940B 1N5940B 40.85 43 45.15 8.7 53 950 0.25 1 32.7 34
1N5941B 1N5941B 44.65 47 49.35 8.0 67 1000 0.25 1 35.8 31
1N5942B 1N5942B 48.45 51 53.55 7.3 70 1100 0.25 1 38.8 29
1N5943B 1N5943B 53.20 56 58.80 6.7 86 1300 0.25 1 42.6 26
1N5944B 1N5944B 58.90 62 65.10 6.0 100 1500 0.25 1 47.1 24
1N5945B 1N5945B 64.60 68 71.40 5.5 120 1700 0.25 1 51.7 22
1N5946B 1N5946B 71.25 75 78.75 5.0 140 2000 0.25 1 56 20
1N5947B 1N5947B 77.90 82 86.10 4.6 160 2500 0.25 1 62.2 18
1N5948B 1N5948B 86.45 91 95.55 4.1 200 3000 0.25 1 69.2 16
1N5950B 1N5950B 104.5 110 115.5 3.4 300 4000 0.25 1 83.6 13
1N5951B 1N5951B 114 120 126 3.1 380 4500 0.25 1 91.2 12
1N5952B 1N5952B 123.5 130 136.5 2.9 450 5000 0.25 1 98.8 11
1N5953B 1N5953B 142.5 150 157.5 2.5 600 6000 0.25 1 114 10
1N5954B 1N5954B 152 160 168 2.3 700 6500 0.25 1 121.6 9
1N5955B 1N5955B 171 180 189 2.1 900 7000 0.25 1 136.8 8
1N5956B 1N5956B 190 200 210 1.9 1200 8000 0.25 1 152 7
1. TOLERANCE AND TYPE NUMBER DESIGNATION
Tolerance designation – device tolerance of ±5% are indicated by a “B” suffix.
2. ZENER VOLTAGE (VZ) MEASUREMENT
ON Semiconductor guarantees the zener voltage when measured at 90 seconds while maintaining the lead temperature (TL) at 30°C ±1°C,
3/8 from the diode body.
3. ZENER IMPEDANCE (ZZ) DERIVATION
The zener impedance is derived from 60 seconds AC voltage, which results when an AC current having an rms value equal to 10% of the
DC zener current (IZT or IZK) is superimposed on IZT or IZK.
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Figure 1. Power Temperature Derating Curve
TL, LEAD TEMPERATURE (°C)
0 20 40 60 20080 100 120 140 160 180
0
1
2
3
4
5
L = 1/8
L = 3/8
L = 1
L = LEAD LENGTH
TO HEAT SINK
PD, STEADY STATE DISSIPATION (WATTS)
t, TIME (SECONDS)
0.0001 0.0002 0.0005 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10
0.3
0.5
0.7
1
2
3
5
7
10
20
30
D =0.5
0.2
0.1
0.05
0.01
D = 0
DUTY CYCLE, D =t1/t2
θJL(t, D) TRANSIENT THERMAL RESISTANCE
JUNCTIONTOLEAD ( C/W)°
PPK t1
NOTE: BELOW 0.1 SECOND, THERMAL
RESPONSE CURVE IS APPLICABLE
TO ANY LEAD LENGTH (L).
SINGLE PULSE TJL = θJL (t)PPK
REPETITIVE PULSES TJL = θJL (t,D)PPK
t2
0.02
10
20
30
50
100
200
300
500
1K
0.1 0.2 0.3 0.5 1 2 3 5 10 20 30 50 100
PW, PULSE WIDTH (ms)
P , PEAK SURGE POWER (WATTS)
PK
1 2 5 10 20 50 100 200 400 1000
0.0003
0.0005
0.001
0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1
2
3
TA = 125°C
TA = 125°C
NOMINAL VZ (VOLTS)
AS SPECIFIED IN ELEC. CHAR. TABLE
Figure 2. Typical Thermal Response L, Lead Length = 3/8 Inch
Figure 3. Maximum Surge Power Figure 4. Typical Reverse Leakage
IR, REVERSE LEAKAGE (µAdc) @ VR
RECTANGULAR
NONREPETITIVE
WAVEFORM
TJ=25°C PRIOR
TO INITIAL PULSE
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APPLICATION NOTE
Since the actual voltage available from a given zener
diode is temperature dependent, it is necessary to determine
junction temperature under any set of operating conditions
in order to calculate its value. The following procedure is
recommended:
Lead Temperature, TL, should be determined from:
TL = θLA PD + TA
θLA is the lead-to-ambient thermal resistance (°C/W) and PD
is the power dissipation. The value for θLA will vary and
depends on the device mounting method. θLA is generally
30–40°C/W for the various clips and tie points in common
use and for printed circuit board wiring.
The temperature of the lead can also be measured using a
thermocouple placed on the lead as close as possible to the
tie point. The thermal mass connected to the tie point is
normally large enough so that it will not significantly
respond to heat surges generated in the diode as a result of
pulsed operation once steady-state conditions are achieved.
Using the measured value of TL, the junction temperature
may be determined by:
TJ = TL + TJL
TJL is the increase in junction temperature above the lead
temperature and may be found from Figure 2 for a train of
power pulses (L = 3/8 inch) or from Figure 10 for dc power.
TJL = θJL PD
For worst-case design, using expected limits of IZ, limits
of PD and the extremes of TJ (TJ) may be estimated.
Changes in voltage, VZ, can then be found from:
V = θVZ TJ
θVZ, the zener voltage temperature coefficient, is found
from Figures 5 and 6.
Under high power-pulse operation, the zener voltage will
vary with time and may also be affected significantly by the
zener resistance. For best regulation, keep current
excursions as low as possible.
Data of Figure 2 should not be used to compute surge
capability. Sur ge limitations are given in Figure 3. They are
lower than would be expected by considering only junction
temperature, as current crowding effects cause temperatures
to be extremely high in small spots resulting in device
degradation should the limits of Figure 3 be exceeded.
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Figure 5. Units To 12 Volts Figure 6. Units 10 To 400 Volts
Figure 7. VZ = 3.3 thru 10 Volts Figure 8. VZ = 12 thru 82 Volts
Figure 9. VZ = 100 thru 400 Volts Figure 10. Typical Thermal Resistance
ZENER VOLTAGE versus ZENER CURRENT
(Figures 7, 8 and 9)
TEMPERATURE COEFFICIENT RANGES
(90% of the Units are in the Ranges Indicated)
VZ, ZENER VOLTAGE @ IZT (VOLTS)
34 5 6 789101112
10
8
6
4
2
0
-2
-4
RANGE
, TEMPERATURE COEFFICIENT (mV/ C) @ I ZTVZ °
θ
1000
500
200
100
50
20
10 10 20 50 100 200 400 1000
VZ, ZENER VOLTAGE @ IZT (VOLTS)
, TEMPERATURE COEFFICIENT (mV/ C) @ IZTVZ °θ
01 234 56 7 8910
100
50
30
20
10
1
0.5
0.3
0.2
0.1
VZ, ZENER VOLTAGE (VOLTS)
I , ZENER CURRENT (mA)
Z
2
5
3
0102030405060708090100
VZ, ZENER VOLTAGE (VOLTS)
I , ZENER CURRENT (mA)
Z
100
50
30
20
10
1
0.5
0.3
0.2
0.1
2
5
3
100 200 300 400250 350150
10
1
0.5
0.2
0.1
VZ, ZENER VOLTAGE (VOLTS)
2
5
I , ZENER CURRENT (mA)
Z
0
10
20
30
40
50
60
70
80
L, LEAD LENGTH TO HEAT SINK (INCH)
PRIMARY PATH OF
CONDUCTION IS THROUGH
THE CATHODE LEAD
0 1/8 1/4 3/8 1/2 5/8 3/4 7/8 1
TL
JL, JUNCTIONTOLEAD THERMAL RESISTANCE
θ
LL
( C/W)°
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OUTLINE DIMENSIONS
3 Watt DO–41 Surmetic 30
Zener Voltage Regulators – Axial Leaded
PLASTIC DO–41
CASE 59–10
ISSUE R
B
D
K
K
F
F
ADIM MIN MAX MIN MAX
MILLIMETERSINCHES
A4.10 5.200.161 0.205
B2.00 2.700.079 0.106
D0.71 0.860.028 0.034
F--- 1.27--- 0.050
K25.40 ---1.000 ---
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 59-04 OBSOLETE, NEW STANDARD 59-09.
4. 59-03 OBSOLETE, NEW STANDARD 59-10.
5. ALL RULES AND NOTES ASSOCIATED WITH
JEDEC DO-41 OUTLINE SHALL APPLY
6. POLARITY DENOTED BY CATHODE BAND.
7. LEAD DIAMETER NOT CONTROLLED WITHIN F
DIMENSION.
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1N5913B/D
Surmetic is a trademark of Semiconductor Components Industries, LLC.
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