Datasheet, V 1.1, July 2007
BTS5236-2GS
Smart High-Side Power Switch
PROFET
Two Channels, 50 mΩ
Automotive Power
Smart High-Side Power Switch
BTS5236-2GS
Datasheet 2 V 1.1, 2007-09-07
Table of Contents Page
1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
1.1 Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
1.2 Terms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
2 Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
2.1 Pin Assignment BTS5236-2GS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
2.2 Pin Definitions and Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
3 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
3.1 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 Block Description and Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . 10
4.1 Power Stages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
4.1.1 Output On-State Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
4.1.2 Input Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
4.1.3 Inductive Output Clamp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
4.1.4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
4.2 Protection Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
4.2.1 Over Load Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
4.2.2 Reverse Polarity Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
4.2.3 Over Voltage Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
4.2.4 Loss of Ground Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
4.2.5 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
4.3 Diagnosis . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
4.3.1 ON-State Diagnosis . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
4.3.2 OFF-State Diagnosis . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
4.3.3 Sense Enable Function . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
4.3.4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
5 Package Outlines BTS5236-2GS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
6 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Datasheet 3 V 1.1, 2007-09-07
Type Package Marking
BTS5236-2GS PG-DSO-14-32 BTS5236-2GS
Smart High-Side Power Switch
PROFET
BTS5236-2GS
Product Summary
The BTS5236-2GS is a dual channel high-side power
switch in PG-DSO-14-32 package providing
embedded protective functions.
The power transistor is built by a N-channel vertical
power MOSFET with charge pump. The device is
monolithically integrated in Smart SIPMOS
technology.
Basic Features
• Green product (RoHS Compliant)
• Very low standby current
• 3.3 V and 5 V compatible logic pins
• Improved electromagnetic compatibility (EMC)
• Stable behavior at under voltage
• Logic ground independent from load ground
• Secure load turn-off while logic ground disconnected
• Optimized inverse current capability
• AEC qualified
Operating voltage Vbb(on) 4.5 … 28 V
Over voltage protection Vbb(AZ) 41 V
On-State resistance RDS(ON) 50 mΩ
Nominal load current (one channel active) IL(nom) 3.2 A
Current limitation IL(LIM) 23 A
Current limitation repetitive IL(SCr) 6A
Standby current for whole device with load Ibb(OFF) 2.5 µA
PG-DSO-14-32
Smart High-Side Power Switch
BTS5236-2GS
Datasheet 4 V 1.1, 2007-09-07
Protective Functions
• Reverse battery protection without external components
• Short circuit protection
• Overload protection
• Multi-step current limitation
• Thermal shutdown with restart
• Thermal restart at reduced current limitation
• Over voltage protection without external resistor
• Loss of ground protection
• Electrostatic discharge protection (ESD)
Diagnostic Functions
• Enhanced IntelliSense signal for each channel
• Enable function for diagnosis pins (IS1and IS2)
• Proportional load current sense signal by current source
• High accuracy of current sense signal at wide load current range
• Open load detection in ON-state by load current sense
• Over load (current limitation) diagnosis in ON-state, signalling by voltage source
• Latched over temperature diagnosis in ON-state, signalling by voltage source
• Open load detection in OFF-state, signalling by voltage source
Applications
•µC compatible high-side power switch with diagnostic feedback for 12 V grounded
loads
• Suitable for automotive and industrial applications
• All types of resistive, inductive and capacitive loads
• Suitable for loads with high inrush currents, such as lamps
• Suitable for loads with low currents, such as LEDs
• Replaces electromechanical relays, fuses and discrete circuits
Smart High-Side Power Switch
BTS5236-2GS
Overview
Datasheet 5 V 1.1, 2007-09-07
1Overview
The BTS5236-2GS is a dual channel high-side power switch (two times 50mΩ) in
PG-DSO-14-32 package providing embedded protective functions.
The Enhanced IntelliSense pins IS1 and IS2 provide a sophisticated diagnostic feedback
signal including current sense function, over load and over temperature alerts in ON-
state and open load alert in OFF-state. The diagnosis signals can be switched on and
off by the sense enable pin SEN.
An integrated ground resistor as well as integrated resistors at each input pin (IN1, IN2,
SEN) reduce external components to a minimum.
The power transistor is built by a N-channel vertical power MOSFET with charge pump.
The inputs are ground referenced CMOS compatible. The device is monolithically
integrated in Smart SIPMOS technology.
1.1 Block Diagram
Figure 1 Block Diagram
channel 1
internal
power
supply
ESD
protection
OUT2
channel 2
control and protection circuit
equivalent to
channel 1
IN1
IS1
SEN
GND
R
GND
IS2
IN2
open load
detection
logic
gate control
&
charge pump
VBB
OUT1
clamp for
inductive load
multi step
load current
limitation
load current
sense
over load detection
temper ature sensor
Smart High-Side Power Switch
BTS5236-2GS
Overview
Datasheet 6 V 1.1, 2007-09-07
1.2 Terms
Following figure shows all terms used in this datasheet.
Figure 2 Terms
In all tables of electrical characteristics is valid: Channel related symbols without channel
number are valid for each channel separately.
Terms2ch.emf
I
IN1
V
IN1
OUT1
I
IN2
V
IN2
V
IS1
I
IS1
V
IS2
I
IS2
V
bb
V
SEN
I
SEN
I
L1
V
OUT2
V
OUT1
V
DS2
V
DS1
I
L2
GND
I
GND
I
bb
IN1
IN2
IS1
IS2
SEN
VBB
OUT2
BTS5236-2GS
Smart High-Side Power Switch
BTS5236-2GS
Pin Configuration
Datasheet 7 V 1.1, 2007-09-07
2 Pin Configuration
2.1 Pin Assignment BTS5236-2GS
Figure 3 Pin Configuration PG-DSO-14-32
2.2 Pin Definitions and Functions
Pin Symbol I/O Function
2 IN1 I Input signal for channel 1
6 IN2 I Input signal for channel 2
3 IS1 O Diagnosis output signal channel 1
5 IS2 O Diagnosis output signal channel 2
7 SEN I Sense Enable input for channel 1&2
12, 13 OUT1 1)
1) All output pins of each channel have to be connected
O Protected high-side power output channel 1
9, 10 OUT2 1) O Protected high-side power output channel 2
1 GND – Ground connection
4, 8, 11,
14
VBB 2)
2) All VBB pins have to be connected
– Positive power supply for logic supply as well as
output power supply
(top view)
OUT1
OUT1
VBB
14
13
12
11
10
9
GND
IN1
IS1
IS2
VBB
IN2
1
2
3
4
5
6
VBB
SEN
78
OUT2
OUT2
VBB
Smart High-Side Power Switch
BTS5236-2GS
Electrical Characteristics
Datasheet 8 V 1.1, 2007-09-07
3 Electrical Characteristics
3.1 Maximum Ratings
Stresses above the ones listed here may affect device reliability or may cause permanent
damage to the device.
Unless otherwise specified:
Tj = 25 °C
Pos. Parameter Symbol Limit Values Unit Test
Conditions
min. max.
Supply Voltage
3.1.1 Supply voltage Vbb -16 28 V
3.1.2 Supply voltage for full short
circuit protection (single pulse)
(Tj(0) = -40 °C .. 150 °C)
Vbb(SC) 028VL = 8 µH,
R = 0.2 Ω 1)
3.1.3 Voltage at power transistor VDS 52 V
3.1.4 Supply Voltage for Load Dump
protection
Vbb(LD) 41 V RI = 2 Ω 2)
RL = 6.8 Ω
Power Stages
3.1.5 Load current ILIL(LIM) A3)
3.1.6 Maximum energy dissipation
single pulse
EAS 110 mJ Vbb = 13.5V
IL(0) = 2 A 4)
Tj(0) = 150 °C
3.1.7 Power dissipation (DC) Ptot 1.1 W Ta = 85 °C 5)
Tj ≤150 °C
Logic Pins
3.1.8 Voltage at input pin VIN -5
-16
10 V
t ≤2min
3.1.9 Current through input pin IIN -2.0
-8.0
2.0 mA
t ≤2min
3.1.10 Voltage at sense enable pin VSEN -5
-16
10 V
t ≤2min
3.1.11 Current through sense enable
pin
ISEN -2.0
-8.0
2.0 mA
t ≤2min
3.1.12 Current through sense pin IIS -25 10 mA
Smart High-Side Power Switch
BTS5236-2GS
Electrical Characteristics
Datasheet 9 V 1.1, 2007-09-07
Temperatures
3.1.13 Junction Temperature Tj-40 150 °C
3.1.14 Dynamic temperature increase
while switching ∆Tj-60°C
3.1.15 Storage Temperature Tstg -55 150 °C
ESD Susceptibility
3.1.16 ESD susceptibility HBM
IN, SEN
IS
OUT
VESD
-1
-2
-4
1
2
4
kV according to
EIA/JESD
22-A 114B
1) R and L describe the complete circuit impedance including line, contact and generator impedances.
2) Load Dump is specified in ISO 7637, RI is the internal resistance of the Load Dump pulse generator.
3) Current limitation is a protection feature. Operation in current limitation is considered as “outside” normal
operating range. Protection features are not designed for continuous repetitive operation.
4) Pulse shape represents inductive switch off: IL(t) = IL(0) * (1 - t/tpulse); 0 < t < tpulse.
5) Device mounted on PCB (50 mm × 50 mm × 1.5mm epoxy, FR4) with 6 cm2 copper heatsinking area (one
layer, 70 µm thick) for Vbb connection. PCB is vertical without blown air.
Unless otherwise specified:
Tj = 25 °C
Pos. Parameter Symbol Limit Values Unit Test
Conditions
min. max.
Smart High-Side Power Switch
BTS5236-2GS
Block Description and Electrical Characteristics
Datasheet 10 V 1.1, 2007-09-07
4 Block Description and Electrical Characteristics
4.1 Power Stages
The power stages are built by N-channel vertical power MOSFETs (DMOS) with charge
pumps.
4.1.1 Output On-State Resistance
The on-state resistance RDS(ON) depends on the supply voltage as well as the junction
temperature Tj. Figure 4 shows that dependencies for the typical on-state resistance.
The behavior in reverse polarity mode is described in Section 4.2.2.
Figure 4 Typical On-State Resistance
4.1.2 Input Circuit
Figure 5 shows the input circuit of the BTS5236-2GS. There is an integrated input
resistor that makes external components obsolete. The current sink to ground ensures
that the device switches off in case of open input pin. The zener diode protects the input
circuit against ESD pulses.
Figure 5 Input Circuit (IN1 and IN2)
40
50
60
70
80
90
4,5 7 9,5 12 14,5 17 19,5 22 24,5 27 29,5 32 34,5 37 39,5
V
BB
/ V
R
DS(ON)
/ mΩ
30
40
50
60
70
80
90
-45 -25 -5 15 35 55 75 95 115 135 155
T / °C
R
DS(ON)
/ mΩ
Vbb = 13.5 V Tj = 25 °C
IN R
IN
I
IN
GND
R
GND
Input . emf
Smart High-Side Power Switch
BTS5236-2GS
Block Description and Electrical Characteristics
Datasheet 11 V 1.1, 2007-09-07
A high signal at the input pin causes the power DMOS to switch on with a dedicated
slope, which is optimized in terms of EMC emission.
Figure 6 Switching a Load (resistive)
4.1.3 Inductive Output Clamp
When switching off inductive loads with high-side switches, the voltage VOUT drops below
ground potential, because the inductance intends to continue driving the current.
Figure 7 Output Clamp (OUT1 and OUT2)
To prevent destruction of the device, there is a voltage clamp mechanism implemented
that keeps that negative output voltage at a certain level (VOUT(CL)). See Figure 7 and
Figure 8 for details. Nevertheless, the maximum allowed load inductance is limited.
IN
V
OUT
t
SwitchOn.emf
t
ON
t
OFF
t
90%
10%
70%
dV/dt
ON
30%
70%
dV/dt
OFF
30%
OutputClamp.emf
OUT
GND
V
bb
VBB
L,
R
L
V
OUT
I
L
Smart High-Side Power Switch
BTS5236-2GS
Block Description and Electrical Characteristics
Datasheet 12 V 1.1, 2007-09-07
Figure 8 Switching an Inductance
Maximum Load Inductance
While demagnetization of inductive loads, energy has to be dissipated in the BTS5236-
2GS. This energy can be calculated with following equation:
(1)
This equation simplifies under the assumption of RL = 0:
(2)
The energy, which is converted into heat, is limited by the thermal design of the
component. See Figure 9 for the maximum allowed energy dissipation.
Figure 9 Maximum Energy Dissipation Single Pulse, Tj,Start = 150 °C
V
OUT
I nduct iveLoad. emf
t
I
L
t
V
OUT(CL)
V
bb
IN = 5V IN = 0V
0
EV
bb VOUT(CL)
–()
VOUT(CL)
RL
-----------------------ln⋅1RLIL
⋅
VOUT(CL)
-----------------------–
IL
+L
RL
------⋅⋅=
E1
2
---LIL
21Vbb
VOUT(CL)
-----------------------–
⋅=
0
50
100
150
200
250
300
123456
I / A
EAS / mJ
Vbb = 13.5 V
Smart High-Side Power Switch
BTS5236-2GS
Block Description and Electrical Characteristics
Datasheet 13 V 1.1, 2007-09-07
4.1.4 Electrical Characteristics
Unless otherwise specified:
Vbb = 9 V to 16 V, Tj = -40 °C to +150 °C, typical values: Vbb = 13.5 V, Tj = 25 °C
Pos. Parameter Symbol Limit Values Unit Test Conditions
min. typ. max.
General
4.1.1 Operating voltage Vbb 4.5 28 V VIN = 4.5 V
RL = 12 Ω
VDS < 0.5 V
4.1.2 Operating current
one channel active
all channels active
IGND
1.8
3.6
4.0
8.0
mA VIN = 5 V
4.1.3 Standby current for
whole device with
load
Ibb(OFF)
1.5 2.5
2.5
15
µAVIN = 0 V
VSEN = 0 V
Tj = 25 °C
Tj = 85 °C1)
Tj = 150 °C
Output Characteristics
4.1.4 On-State resistance
per channel
RDS(ON)
40
80 100
mΩIL = 2.5 A
Tj = 25 °C1)
Tj = 150 °C
4.1.5 Output voltage drop
limitation at small load
currents
VDS(NL) 40 mV IL < 0.25 A
4.1.6 Nominal load current
per channel
one channel active
channels active
IL(nom)
3.2
2.3
ATa = 85 °C
Tj ≤150 °C 2) 3)
4.1.7 Output clamp V
OUT(CL)
-24 -20 -17 V IL = 40 mA
4.1.8 Output leakage
current per channel
IL(OFF) 0.1 6.0 µAVIN = 0 V
4.1.9 Inverse current
capability
-IL(inv) -3-A
1)
Smart High-Side Power Switch
BTS5236-2GS
Block Description and Electrical Characteristics
Datasheet 14 V 1.1, 2007-09-07
Note: Characteristics show the deviation of parameter at the given supply voltage and
junction temperature. Typical values show the typical parameters expected from
manufacturing.
Thermal Resistance
4.1.10 Junction to case Rthjc 45 K/W 1)
4.1.11 Junction to ambient
one channel active
all channels active
Rthja
67
62
K/W 1) 2)
Input Characteristics
4.1.12 Input resistor RIN 1.8 3.5 5.5 kΩ
4.1.13 L-input level VIN(L) -0.3 - 1.0 V
4.1.14 H-input level VIN(H) 2.5 - 5.7 V
4.1.15 L-input current IIN(L) 31875µAVIN = 0.4 V
4.1.16 H-input current IIN(H) 10 38 75 µAVIN = 5 V
Timings
4.1.17 Turn-on time to
90% VOUT
tON - 100 250 µsRL = 12 Ω
Vbb = 13.5 V
4.1.18 Turn-off time to
10% VOUT
tOFF - 120 250 µsRL = 12 Ω
Vbb = 13.5 V
4.1.19 slew rate
30% to 70% VOUT
dV/ dtON 0.1 0.25 0.5 V/µsRL = 12 Ω
Vbb = 13.5 V
4.1.20 slew rate
70% to 30% VOUT
-dV/
dtOFF
0.1 0.25 0.5 V/µsRL = 12 Ω
Vbb = 13.5 V
1) Not subject to production test, specified by design.
2) Device mounted on PCB (50 mm × 50 mm × 1.5mm epoxy, FR4) with 6 cm2 copper heatsinking area (one
layer, 70 µm thick) for Vbb connection. PCB is vertical without blown air.
3) Not subject to production test, parameters are calculated from RDS(ON) and Rth.
Unless otherwise specified:
Vbb = 9 V to 16 V, Tj = -40 °C to +150 °C, typical values: Vbb = 13.5 V, Tj = 25 °C
Pos. Parameter Symbol Limit Values Unit Test Conditions
min. typ. max.
Smart High-Side Power Switch
BTS5236-2GS
Datasheet 15 V 1.1, 2007-09-07
4.2 Protection Functions
The device provides embedded protective functions. Integrated protection functions are
designed to prevent IC destruction under fault conditions described in the data sheet.
Fault conditions are considered as “outside” normal operating range. Protection
functions are neither designed for continuous nor repetitive operation.
4.2.1 Over Load Protection
The load current IOUT is limited by the device itself in case of over load or short circuit to
ground. There are three steps of current limitation which are selected automatically
depending on the voltage VDS across the power DMOS. Please note that the voltage at
the OUT pin is Vbb -VDS. Please refer to following figure for details.
Figure 10 Current Limitation (minimum values)
Current limitation is realized by increasing the resistance of the device which leads to
rapid temperature rise inside. A temperature sensor for each channel causes an
overheated channel to switch off to prevent destruction. After cooling down with thermal
hysteresis, the channel switches on again. Please refer to Figure 11 for details.
Figure 11 Shut Down by Over Temperature with Current Limitation
In short circuit condition, the load current is initially limited to IL(LIM). After thermal restart,
the current limitation level is reduced to IL(SCr). The current limitation level is reset to IL(LIM)
by switching off the device (VIN = 0 V).
Current Limit at ion.emf
I
L
5 101520
5
10
15
20
25
VDS25
IN
IL
IIS
t
IL(LIM)
IL(SCr)
t
t
OverLoad .emf
tOFF(SC)
Smart High-Side Power Switch
BTS5236-2GS
Datasheet 16 V 1.1, 2007-09-07
4.2.2 Reverse Polarity Protection
In case of reverse polarity, the intrinsic body diode causes power dissipation. Additional
power is dissipated by the integrated ground resistor. Use following formula for
estimation of total power dissipation Pdiss(rev) in reverse polarity mode.
(3)
The reverse current through the intrinsic body diode has to be limited by the connected
load. The current through sense pins IS1 and IS2 has to be limited (please refer to
maximum ratings on Page 8). The current through the ground pin (GND) is limited
internally by RGND. The over-temperature protection is not active during reverse polarity.
4.2.3 Over Voltage Protection
In addition to the output clamp for inductive loads as described in Section 4.1.3, there is
a clamp mechanism for over voltage protection. Because of the integrated ground
resistor, over voltage protection does not require external components.
As shown in Figure 12, in case of supply voltages greater than Vbb(AZ), the power
transistor switches on and the voltage across logic part is clamped. As a result, the
internal ground potential rises to Vbb - Vbb(AZ). Due to the ESD zener diodes, the potential
at pin IN1, IN2 and SEN rises almost to that potential, depending on the impedance of
the connected circuitry.
Figure 12 Over Voltage Protection
4.2.4 Loss of Ground Protection
In case of complete loss of the device ground connections, but connected load ground,
the BTS5236-2GS securely changes to or stays in off state.
P
diss(rev) VDS(rev) IL
⋅()
all channels
∑Vbb
2
RGND
--------------+=
OUT
VBB
OverVolt age . emf
V
OUT
R
GND
logic
GND
IN
IS
SEN R
SEN
R
IN
ZD
ESD
ZD
AZ
internal ground
Smart High-Side Power Switch
BTS5236-2GS
Datasheet 17 V 1.1, 2007-09-07
4.2.5 Electrical Characteristics
Unless otherwise specified:
Vbb = 9 V to 16 V, Tj = -40 °C to +150 °C , typical values: Vbb = 13.5 V, Tj = 25 °C
Pos. Parameter Symbol Limit Values Unit Test Conditions
min. typ. max.
Over Load Protection
4.2.1 Load current limitation IL(LIM) 23 42 A VDS = 7 V
14 28 A VDS = 14 V
314A
VDS = 28 V 1) 2)
1) Please note that an external forced VDS must not exceed Vbb + |VOUT(CL)|
4.2.2 Repetitive short circuit
current limitation
IL(SCr) -6-ATj = Tj(SC)
2)
2) Not subject to production test, specified by design
4.2.3 Initial short circuit shut
down time
tOFF(SC) -0.5-msTjStart = 25 °C 2)
4.2.4 Thermal shut down
temperature
Tj(SC) 150 170
2)
-°C
4.2.5 Thermal hysteresis ∆Tj-7-K
2)
Reverse Battery
4.2.6 Drain-Source diode
voltage (VOUT >Vbb)
-V
DS(rev)
--900mVIL = -3.5 A
Vbb = -13.5 V
Tj = 150 °C
4.2.7 Reverse current
through GND pin
-IGND -65-mAVbb = -13.5 V 2)
Ground Circuit
4.2.8 Integrated Resistor in
GND line
RGND 115 220 350 Ω
Over Voltage
4.2.9 Over voltage
protection
Vbb(AZ) 41 47 53 V Ibb = 2 mA
Loss of GND
4.2.10 Output leakage
current while GND
disconnected
IL(GND) --1mAIIN = 0, ISEN = 0,
IIS = 0,
IGND = 0 2) 3)
3) No connection at these pins
Smart High-Side Power Switch
BTS5236-2GS
Datasheet 18 V 1.1, 2007-09-07
4.3 Diagnosis
For diagnosis purpose, the BTS5236-2GS provides an Enhanced IntelliSense signal at
pins IS1 and IS2. This means in detail, the current sense signal IIS, a proportional signal
to the load current (ratio kILIS = IL / IIS), is provided as long as no failure mode (see
Table 1) occurs. In case of a failure mode, the voltage VIS(fault) is fed to the diagnosis pin.
Figure 13 Block Diagram: Diagnosis
Table 1 Truth Table1)
Operation Mode Input
Level
Output
Level
Diagnostic Output
SEN = H SEN = L
Normal Operation (OFF) L GND Z Z
Short Circuit to GND GND Z Z
Over Temperature Z Z Z
Short Circuit to Vbb Vbb VIS =VIS(fault) Z
Open Load < VOUT(OL)
>VOUT(OL)
Z
VIS =VIS(fault)
Z
Z
channel 1
channel 2
I
IS2
OUT2
I
IS1
OUT1IS1
µC
IN1
V
OUT(OL)
0
1
V
IS( fa u l t)
R
IN1
gate control
IN2
IS2
diagnosis
GND
R
OL
S
OL
load
VBB
Sense. emf
R
IS1
R
IS2
R
lim
R
lim
over temperature
over load
gate control
R
IN2
open load @ off
SEN
0
1
R
SEN
0
1
latch
Smart High-Side Power Switch
BTS5236-2GS
Datasheet 19 V 1.1, 2007-09-07
4.3.1 ON-State Diagnosis
The standard diagnosis signal is a current sense signal proportional to the load current.
The accuracy of the ratio (kILIS = IL / IIS) depends on the temperature. Please refer to
following Figure 14 for details. Usually a resistor RIS is connected to the current sense
pin. It is recommended to use sense resistors RIS > 500 Ω. A typical value is 4.7 kΩ.
Figure 14 Current sense ratio kILIS
1)
Normal Operation (ON) H ~Vbb IIS =IL/kILIS Z
Current Limitation < Vbb VIS =VIS(fault) Z
Short Circuit to GND ~GND VIS =VIS(fault) Z
Over Temperature Z VIS =VIS(fault) Z
Short Circuit to Vbb Vbb IIS <IL/kILIS Z
Open Load Vbb ZZ
1) L = Low Level, H = High Level, Z = high impedance, potential depends on leakage currents and external circuit
1) The curves show the behavior based on characterization data. The marked points are guaranteed in this
Datasheet in Section 4.3.4 (Position 4.3.6).
Table 1 Truth Table1) (cont’d)
Operation Mode Input
Level
Output
Level
Diagnostic Output
SEN = H SEN = L
1000
2000
3000
4000
5000
6000
7000
8000
0 0.5 1 1.5 2 2.5 3 3.5 4
kILIS
I
L
/A
dummy
Tj = 150°C
dummy
Tj = -40°C
Smart High-Side Power Switch
BTS5236-2GS
Datasheet 20 V 1.1, 2007-09-07
Details about timings between the diagnosis signal IIS and the output voltage VOUT and
load current IL in ON-state can be found in Figure 15.
Figure 15 Timing of Diagnosis Signal in ON-state
In case of over-load as well as over-temperature, the voltage VIS(fault) is fed to the
diagnosis pins as long as the according input pin is high. This means, even if the
overload disappears after the first thermal shutdown or when the device keeps switching
on and off in over-load condition (thermal toggling), the diagnosis signal(VIS(fault)) is
constantly available. Please refer to Figure 16 for details. Please note, that if the
overload disapears before the first thermal shutdown, the diagnosis signal (VIS(fault)) may
remain for approximately 300 µs longer than the duration of the overload.
As a result open load and over load including over temperature can be differentiated in
ON-state.
Consideration must be taken in the selection of the sense resistor in order to distinguish
nominal currents from the overload/short circuit fault state. A potential of 5 V at the sense
pin can be achieved with a big sense resistor even with currents being much smaller than
the current limitation.
SwitchOn.emf
IN
V
OUT
I
IS
t
t
t
I
L
t
ON
t
ON
t
sIS( O N)
t
sIS( L C)
OFF
normal operation over load (current limitation)
t
sIS( O VL )
V
IS(fault)
/ R
S
Smart High-Side Power Switch
BTS5236-2GS
Datasheet 21 V 1.1, 2007-09-07
Figure 16 Timing of Diagnosis Signal in Over Load Condition
4.3.2 OFF-State Diagnosis
Details about timings between the diagnosis signal IIS and the output voltage VOUT and
load current IL in OFF-state can be found in Figure 17. For open load diagnosis in OFF-
state an external output pull-up resistor (ROL) is necessary.
Figure 17 Timing of Diagnosis Signal in OFF-state
For calculation of the pull-up resistor, just the external leakage current Ileakage and the
open load threshold voltage VOUT(OL) has to be taken into account.
(4)
Ileakage defines the leakage current in the complete system e.g. caused by humidity.
There is no internal leakage current from out to ground at BTS5236-2GS. Vbb(min) is the
minimum supply voltage at which the open load diagnosis in off state must be ensured.
To reduce the stand-by current of the system, an open load resistor switch (SOL) is
recommended.
OverLoad.emf
IN
I
IS
t
t
I
L
ON
t
sIS( O VL )
OFF
V
IS( fa u lt)
/ R
S
over temperatureover load (current limitation)
OFF
I
L(LIM)
SwitchOff.emf
IN
V
OUT
I
IS
t
t
t
Open Load, pull-up resistor active
V
IS( fa u lt)
/ R
S
ON OFF
t
d(fault)
t
s(fault)
pull-up resistor
inactive
ROL
Vbb(min) VOUT(OL,max)
–
Ileakage
-----------------------------------------------------------=
Smart High-Side Power Switch
BTS5236-2GS
Datasheet 22 V 1.1, 2007-09-07
4.3.3 Sense Enable Function
The diagnosis signals have to be switched on by a high signal at sense enable pin (SEN).
See Figure 18 for details on the timing between SEN pin and diagnosis signal IIS. Please
note that the diagnosis is disabled, when no signal is provided at pin SEN.
Figure 18 Timing of Sense Enable Signal
The SEN pin circuit is designed equally to the input pin. Please refer to Figure 5 for
details. The resistors Rlim are recommended to limit the current through the sense pins
IS1and IS2 in case of reverse polarity and over voltage. Please refer to maximum ratings
on Page 8.
The stand-by current of the BTS5236-2GS is minimized, when both input pins (IN1 and
IN2) and the sense enable pin (SEN) are on low level.
t
d IS( SEN)
t
sIS( SEN)
t
SEN.emf
t
sIS( SEN)
t
t
d IS( SEN)
I
IS
SEN
Smart High-Side Power Switch
BTS5236-2GS
Datasheet 23 V 1.1, 2007-09-07
4.3.4 Electrical Characteristics
Unless otherwise specified:
Vbb = 9 V to 16 V, Tj = -40 °C to +150 °C, VSEN = 5 V,
typical values: Vbb = 13.5 V, Tj = 25 °C
Pos. Parameter Symbol Limit Values Unit Test Conditions
min. typ. max.
General Definition
4.3.1 Diagnostics signal in
failure mode
VIS(fault) 5-9VVIN = 0 V
VOUT = Vbb
IIS = 1 mA
4.3.2 Diagnostics signal
current limitation in
failure mode
IIS(LIM) 3--mAVIN = 0 V
VOUT = Vbb
Open Load in OFF-State
4.3.3 Open load detection
threshold voltage
V
OUT(OL)
1.6 2.8 4.4 V
4.3.4 Sense signal invalid
after negative input
slope
td(fault) --1.2msVIN = 5 V to 0 V
VOUT = Vbb
4.3.5 Fault signal settling
time
ts(fault) --200µsVIN = 0 V
VOUT = 0 V to
>VOUT(OL)
IIS = 1 mA
Load Current Sense ON-State
4.3.6 Current sense ratio kILIS VIN = 5 V
IL = 40 mA
IL = 1.3 A
IL = 2.2 A
IL = 4.0 A
1000
2300
2410
2465
4035
3050
2920
2850
8000
3580
3380
3275
Tj = -40 °C
IL = 40 mA
IL = 1.3 A
IL = 2.2 A
IL = 4.0 A
1400
2465
2520
2580
3410
2920
2875
2870
6000
3275
3220
3160
Tj = 150 °C
4.3.7 Current sense voltage
limitation
VIS(LIM) 5.0 6.2 7.5 V IIS = 0.5 mA
IL = 3.5 A
4.3.8 Current sense
leakage/offset current
IIS(LH) --3.5µAVIN = 5 V
IL = 0 A
Smart High-Side Power Switch
BTS5236-2GS
Datasheet 24 V 1.1, 2007-09-07
4.3.9 Current sense
leakage, while
diagnosis disabled
IIS(dis) --1µAVSEN = 0 V
IL = 3.5 A
4.3.10 Current sense settling
time to IIS static ±10%
after positive input
slope
tsIS(ON) --350µsVIN = 0 V to 5 V
IL = 3.5 A
1)
4.3.11 Current sense settling
time to IIS static ±10%
after change of load
current
tsIS(LC) --50µs
V
IN
= 5 V
I
L
= 3.5 A to 2.2 A
1)
Over Load in ON-State
4.3.12 Over load detection
current
IL(OVL) 8-I
L(LIM)
AVIN = 5 V
VIS = VIS(fault)
1)
4.3.13 Sense signal settling
time in overload
condition
tsIS(OVL) --200µs
V
OUT
= 2 V
VIN = 0 V to 5 V
Sense Enable
4.3.14 Input resistance RSEN 1.8 3.5 5.5 kΩ
4.3.15 L-input level VSEN(L) -0.3 - 1.0 V
4.3.16 H-input level VSEN(H) 2.5 - 5.7 V
4.3.17 L-input current ISEN(L) 31875µAVSEN = 0.4 V
4.3.18 H-input current ISEN(H) 10 38 75 µAVSEN = 5 V
4.3.19 Current sense settling
time
tsIS(SEN) -325µsVSEN = 0 V to 5 V
VIN = 0 V
VOUT > VOUT(OL)
4.3.20 Current sense
deactivation time
tdIS(SEN) --25µsVSEN = 5 V to 0 V
IL = 3.5 A
RS = 5 kΩ 1)
1) Not subject to production test, specified by design
Unless otherwise specified:
Vbb = 9 V to 16 V, Tj = -40 °C to +150 °C, VSEN = 5 V,
typical values: Vbb = 13.5 V, Tj = 25 °C
Pos. Parameter Symbol Limit Values Unit Test Conditions
min. typ. max.
Smart High-Side Power Switch
BTS5236-2GS
Package Outlines BTS5236-2GS
Datasheet 25 V 1.1, 2007-09-07
5 Package Outlines BTS5236-2GS
Figure 19 PG-DSO-14-32 (Plastic Dual Small Outline Package)
Green Product
To meet the world-wide requirements for environmentally friendly products and to be
compliant with government regulations the device is available as a green product. Green
Products are RoHS-compliant (i.e Pb-free finish on leads and suitable for Pb-free
soldering according to IPC/JEDEC J-STD-020).
±0.08
±0.2
Does not include plastic or metal protrusion of 0.15 max. per side
Index Marking
-0.06
1.27
+0.1
0.41 C
0.1
-0.2
8.75
1
14
7
1) A
M
0.2
8
A
0.1 MIN.
(1.5)
C
14x 6
1.75 MAX.
4
1)
-0.2
0.33
±0.25
0.64
0.2
+0.05
-0.01
x 45˚
MAX.8˚
1)
Dimensions in mm
You can find all of our packages, sorts of packing and others in our Infineon Internet Page
“Products”: http://www.infineon.com/products.
Smart High-Side Power Switch
BTS5236-2GS
Revision History
Datasheet 26 2007-09-07
6 Revision History
Version Date Changes
V1.1 07-09-07 Creation of the Data sheet
• insertion of the EAS curves
• insertion of the Ron vs Temperature and Battery voltage.
• Adding the test voltage for EAS (3.1.6)
• Change in the parameter 4.3.11 in the test condition
Edition 2007-09-07
Published by Infineon Technologies AG,
81726 München, Germany
© Infineon Technologies AG 7/9/07.
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions
or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including
without limitation warranties of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices please contact your
nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances. For information on
the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the
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effectiveness of that device or system. Life support devices or systems are intended to be implanted
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it is reasonable to assume that the health of the user or other persons may be endangered.
Smart High-Side Power Switch
BTS5236-2GS
Datasheet 27 2007-09-07
