NSVF4017SG4 RF Transistor for Low Noise Amplifier 12 V, 100 mA, fT = 10 GHz typ. This RF transistor is designed for low noise amplifier applications. MCPH package is suitable for use under high temperature environment because it has superior heat radiation characteristics. This RF transistor is AEC-Q101 qualified and PPAP capable for automotive applications. www.onsemi.com Features * * * * * * 1 Low-noise Use: NF = 1.2 dB typ. (f = 1 GHz) High Cut-off Frequency: fT = 10 GHz typ. (VCE = 5 V) High Gain: |S21e|2 = 17 dB typ. (f = 1 GHz) MCPH4 Package is Pin-compatible with SC-82FL AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant SC-82FL MCPH4 CASE 419AR ELECTRICAL CONNECTION NPN 2 Typical Applications * * * * Low Noise Amplifier for Digital Radio Low Noise Amplifier for TV Low Noise Amplifier for FM Radio RF Amplifier for UHF Application 1: Emitter 2: Collector 3: Emitter 4: Base 4 1, 3 MAXIMUM RATINGS at TA = 25C Value Unit Collector to Base Voltage VCBO 20 V Collector to Emitter Voltage VCEO 12 V Emitter to Base Voltage VEBO 2 V Collector Current IC 100 mA Collector Dissipation PC 450 mW TJ, Tstg -55 to +150 C Operating Junction and Storage Temperature Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. MARKING DIAGRAM GQ XX GQ LOT No. Symbol LOT No. Rating = Specific Device Code = Lot Number ORDERING INFORMATION Device Package Shipping NSVF4015SG4T1G SC-82FL (Pb-Free) 3000 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. (c) Semiconductor Components Industries, LLC, 2017 March, 2018 - Rev. 0 1 Publication Order Number: NSFV4017SG4/D NSVF4017SG4 Table 1. ELECTRICAL CHARACTERISTICS at TA = 25C (Note 1) Value Parameter Symbol Conditions Min Typ Max Unit Collector Cutoff Current ICBO VCB = 5 V, IE = 0 A 1.0 mA Emitter Cutoff Current IEBO VEB = 1 V, IC = 0 A 1.0 mA DC Current Gain hFE VCE = 5 V, IC = 50 mA 60 fT VCE = 5 V, IC = 30 mA 8 10 GHz | S21e |2 VCE = 5 V, IC = 30 mA, f = 1 GHz 14 17 dB NF VCE = 5 V, IC = 10 mA, f = 1 GHz Gain-Bandwidth Product Forward Transfer Gain Noise Figure 150 1.2 1.8 dB Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pay attention to handling since it is liable to be affected by static electricity due to the high-frequency process adopted. www.onsemi.com 2 NSVF4017SG4 TYPICAL CHARACTERISTICS 100 80 70 90 500 mA 60 400 mA 50 300 mA 40 30 200 mA 20 100 mA 70 60 50 40 30 20 10 0 VCE=5V 80 Collector Current, IC - mA 90 Collector Current, IC - mA 100 1000 mA 900 mA 800 mA 700 mA 600 mA 10 IB =0 mA 0 2 4 6 8 10 0 12 0 0.2 Figure 1. IC vs. VCE 1.0 f=1MHz 7 5 Output Capacitance, Cob - pF 5 DC Current Gain, hFE 0.8 10 VCE=5V 7 3 2 100 7 5 3 2 10 1.0 2 3 5 7 10 2 3 5 Collector Current, IC - mA 7 3 2 1.0 7 5 3 2 0.1 0.1 100 2 3 Gain-Bandwidth Product, fT -- GHz 7 5 3 2 5 7 1.0 2 3 5 7 10 3 5 7 10 2 100 f=1MHz 3 2 3 5 7 100 Figure 4. Cob vs. VCB 1.0 2 5 7 1.0 Collector-to-Base Voltage,VCB - V Figure 3. hFE vs. IC Reverse Transfer Capacitance, Cre - pF 0.6 Figure 2. IC vs. VBE 1000 0.1 0.1 0.4 Base-to-Emitter Voltage, V BE - V Collector-to-Emitter Voltage, VCE - V 2 3 Collector-to-Base Voltage,VCB - V 5 3 2 10 7 5 3 2 1.0 1.0 5 7 100 VCE=5V f=1GHz 7 Figure 5. Cre vs. VCB 2 3 5 7 10 2 Figure 6. fT vs. IC www.onsemi.com 3 3 Collector Current, IC - mA 5 7 100 NSVF4017SG4 TYPICAL CHARACTERISTICS 10 VCE=5V f=1GHz 20 8 15 10 6 5 4 3 1 0 1.0 2 3 5 7 10 2 3 5 Collector Current, IC - mA 7 0 1.0 100 Figure 7. MS21eS2 vs. IC Zs=50 W 450 400 350 300 250 200 150 100 50 0 20 40 60 80 100 120 Zs=Zsopt 2 3 5 7 10 2 140 160 Ambient Temperature, Ta - C Figure 9. PC vs. TA www.onsemi.com 4 3 Collector Current, IC - mA Figure 8. NF vs. IC 500 Collector Dissipation, PC - mW 7 2 5 0 VCE=5V f=1GHz 9 Noise Figure, NF - dB Forward Transfer Gain, |S21e|2 - dB 25 5 7 100 NSVF4017SG4 www.onsemi.com 5 NSVF4017SG4 www.onsemi.com 6 NSVF4017SG4 www.onsemi.com 7 NSVF4017SG4 www.onsemi.com 8 NSVF4017SG4 www.onsemi.com 9 NSVF4017SG4 www.onsemi.com 10 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SC-82FL / MCPH4 CASE 419AR ISSUE O DOCUMENT NUMBER: STATUS: 98AON65645E ON SEMICONDUCTOR STANDARD NEW STANDARD: (c) Semiconductor Components Industries, LLC, 2002 October, DESCRIPTION: 2002 - Rev. 0 SC-82FL / MCPH4 http://onsemi.com 1 DATE 30 DEC 2011 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped "CONTROLLED COPY" in red. Case Outline Number: PAGE 1 OFXXX 2 DOCUMENT NUMBER: 98AON65645E PAGE 2 OF 2 ISSUE O REVISION RELEASED FOR PRODUCTION FROM SANYO TO ON SEMICONDUCTOR. REQ. BY D. TRUHITTE. 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