© Semiconductor Components Industries, LLC, 2017
March, 2018 − Rev. 0
1Publication Order Number:
NSFV4017SG4/D
NSVF4017SG4
RF Transistor for Low Noise
Amplifier
12 V, 100 mA, fT = 10 GHz typ.
This RF transistor is designed for low noise amplifier applications.
MCPH package is suitable for use under high temperature
environment because it has superior heat radiation characteristics.
This RF transistor is AEC−Q101 qualified and PPAP capable for
automotive applications.
Features
•Low−noise Use: NF = 1.2 dB typ. (f = 1 GHz)
•High Cut−off Frequency: fT = 10 GHz typ. (VCE = 5 V)
•High Gain: |S21e|2 = 17 dB typ. (f = 1 GHz)
•MCPH4 Package is Pin−compatible with SC−82FL
•AEC−Q101 Qualified and PPAP Capable
•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications
•Low Noise Amplifier for Digital Radio
•Low Noise Amplifier for TV
•Low Noise Amplifier for FM Radio
•RF Amplifier for UHF Application
MAXIMUM RATINGS at TA = 25°C
Rating Symbol Value Unit
Collector to Base Voltage VCBO 20 V
Collector to Emitter Voltage VCEO 12 V
Emitter to Base Voltage VEBO 2 V
Collector Current IC100 mA
Collector Dissipation PC450 mW
Operating Junction and Storage Temper-
ature
TJ, Tstg −55 to
+150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
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SC−82FL
MCPH4
CASE 419AR
MARKING DIAGRAM
GQ = Specific Device Code
XX = Lot Number
Device Package Shipping†
ORDERING INFORMATION
NSVF4015SG4T1G SC−82FL
(Pb−Free)
3000 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
1
ELECTRICAL CONNECTION
NPN
4
1, 3
2
1: Emitter
2: Collector
3: Emitter
4: Base
GQ
LOT No.
LOT No.
NSVF4017SG4
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2
Table 1. ELECTRICAL CHARACTERISTICS at TA = 25°C (Note 1)
Parameter Symbol Conditions
Value
Unit
Min Typ Max
Collector Cutoff Current ICBO VCB = 5 V, IE = 0 A 1.0 mA
Emitter Cutoff Current IEBO VEB = 1 V, IC = 0 A 1.0 mA
DC Current Gain hFE VCE = 5 V, IC = 50 mA 60150
Gain−Bandwidth Product fTVCE = 5 V, IC = 30 mA 810GHz
Forward Transfer Gain | S21e |2VCE = 5 V, IC = 30 mA, f = 1 GHz 14 17 dB
Noise Figure NF VCE = 5 V, IC = 10 mA, f = 1 GHz 1.2 1.8 dB
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pay attention to handling since it is liable to be affected by static electricity due to the high−frequency process adopted.
NSVF4017SG4
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3
TYPICAL CHARACTERISTICS
Collector−to−Base Voltage, VCB −V
Output Capacitance, Cob − pF
Collector Current, IC − mA
DC Current Gain, hFE
Collector−to−Emitter Voltage, VCE − V
Collector Current, IC − mA
Base−to−Emitter Voltage, VBE − V
Collector Current, IC − mA
Collector Current, IC − mA
Gain−Bandwidth Product, fT −− GHz
Collector−to−Base Voltage, VCB −V
Reverse Transfer Capacitance, Cre − pF
0 0.2 0.4 0.6 0.8 1.0
012108462
0
10
30
50
100
70
20
40
60
80
90
0
20
10
30
40
60
90
80
70
50
100
IB=0 A
100 A
2
3
5
7
2
3
5
7
100
10
1000
3257
1.0 10 3257
100
VCE=5V
VCE=5V
7
2
5
3
7
2
5
3
1.0
0.1
10
325 1000.1 73257
1.0 3257
10
f=1MHz
7
2
3
5
7
2
3
5
100
10
1.0
1.0 23 57
10 23 57
100
VCE=5V
f=1GHz
5
7
2
3
1.0
0.1
325 1000.1 73257
10
3257
1.0
f=1MHz
200 A
300 A
400 A
500 A
600 A
700 A
800 A
900 A
1000 A
Figure 1. IC vs. VCE Figure 2. IC vs. VBE
Figure 3. hFE vs. ICFigure 4. Cob vs. VCB
Figure 5. Cre vs. VCB Figure 6. fT vs. IC
m
m
m
m
m
m
m
m
m
m
m
NSVF4017SG4
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4
TYPICAL CHARACTERISTICS
Figure 7. MS21eS2 vs. ICFigure 8. NF vs. IC
Figure 9. PC vs. TA
Collector Current, IC − mA
Noise Figure, NF −dB
Ambient Temperature, Ta − °C
Collector Dissipation, PC − mW
Collector Current, IC − mA
Forward Transfer Gain, |S21e|2 − dB
0
0
20 40 60 80 100 120 140 160
450
400
500
350
250
300
150
50
200
100
25
20
15
10
5
0
10
3257 100
3257
1.0 1.0 10
2735 2 735 100
0
3
1
2
6
8
4
5
7
9
10
Zs=50
VCE=5V
f=1GHz
VCE=5V
f=1GHz
Zs=Zsopt
W
SC−82FL / MCPH4
CASE 419AR
ISSUE O
DATE 30 DEC 2011
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
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1
© Semiconductor Components Industries, LLC, 2002
October, 2002 − Rev. 0
Case Outline Number:
XXX
DOCUMENT NUMBER:
STATUS:
NEW STANDARD:
DESCRIPTION:
98AON65645E
ON SEMICONDUCTOR STANDARD
SC−82FL / MCPH4
Electronic versions are uncontrolled except when
accessed directly from the Document Repository. Printed
versions are uncontrolled except when stamped
“CONTROLLED COPY” in red.
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DOCUMENT NUMBER:
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ISSUE REVISION DATE
ORELEASED FOR PRODUCTION FROM SANYO TO ON SEMICONDUCTOR. REQ.
BY D. TRUHITTE.
30 DEC 2011
© Semiconductor Components Industries, LLC, 2011
December, 2011 − Rev. O
Case Outline Number:
419AR
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