VSK.136..PbF, VSK.142..PbF, VSK.162..PbF Series Vishay High Power Products Thyristor/Diode and Thyristor/Thyristor, 135 A to 160 A (New INT-A-PAK Power Modules) FEATURES * High voltage * Electrically isolated by DBC ceramic (AI2O3) * 3500 VRMS isolating voltage * Industrial standard package * High surge capability * Glass passivated chips * Modules uses high voltage power thyristor/diodes in three basic configurations * Simple mounting * UL approved file E78996 New INT-A-PAK * Compliant to RoHS directive 2002/95/EC * Designed and qualified for multiple level APPLICATIONS * DC motor control and drives PRODUCT SUMMARY IT(AV) * Battery charges 135 A to 160 A * Welders * Power converters * Lighting control * Heat and temperature control MAJOR RATINGS AND CHARACTERISTICS SYMBOL IT(AV) CHARACTERISTICS VSK.136.. VSK.142.. VSK.162.. UNITS 135 140 160 A 300 310 355 50 Hz 3200 4500 4870 60 Hz 3360 4712 5100 50 Hz 51.5 102 119 60 Hz 47 92.5 108 515.5 1013 1190 85 C IT(RMS) ITSM I2t I2t A kA2s kA2s VRRM Range 400 to 1600 V TJ Range - 40 to 125 C ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VSK.136 VSK.142 VSK.162 VOLTAGE CODE VRRM/VDRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V VRSM/VDSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 04 400 500 08 800 900 12 1200 1300 14 1400 1500 16 1600 1700 Document Number: 94513 Revision: 04-May-10 For technical questions, contact: indmodules@vishay.com IRRM/IDRM AT 125 C mA 50 www.vishay.com 1 VSK.136..PbF, VSK.142..PbF, VSK.162..PbF Series Vishay High Power Products Thyristor/Diode and Thyristor/Thyristor, 135 A to 160 A (New INT-A-PAK Power Modules) FORWARD CONDUCTION PARAMETER Maximum average on-state current at case temperature Maximum RMS on-state current Maximum peak, one-cycle on-state, non-repetitive surge current SYMBOL IT(AV) IT(RMS) ITSM TEST CONDITIONS 180 conduction, half sine wave I2t A C 85 85 310 355 t = 10 ms 3200 4500 4870 3360 4712 5100 2700 3785 4100 2800 3963 4300 51.5 102 119 47 92.5 108 36.5 71.6 84 t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms No voltage reapplied 100 % VRRM reapplied No voltage reapplied Sine half wave, initial TJ = TJ maximum 100 % VRRM reapplied t = 0.1 ms to 10 ms, no voltage reapplied UNITS 160 85 t = 8.3 ms Maximum I2t for fusing 140 300 t = 10 ms I2t 135 As AC switch t = 8.3 ms Maximum I2t for fusing VSK.136 VSK.142 VSK.162 33.3 65.4 76.7 515.5 1013 1190 Low level value of threshold voltage VT(TO)1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ maximum 0.86 0.83 0.8 High level value of threshold voltage VT(TO)2 (I > x IT(AV)), TJ maximum 1.05 1 0.98 Low level value on-state slope resistance rt1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ maximum 2.02 1.78 1.67 High level value on-state slope resistance rt2 (I > x IT(AV)), TJ maximum 1.65 1.43 1.38 A kA2s kA2s V m Maximum on-state voltage drop VTM ITM = x IT(AV), TJ = 25 C, 180 conduction 1.57 1.55 1.54 V Maximum forward voltage drop VFM ITM = x IT(AV), TJ = 25 C, 180 conduction 1.57 1.55 1.54 V Maximum holding current Maximum latching current IH Anode supply = 6 V initial IT = 30 A, TJ = 25 C 200 IL Anode supply = 6 V resistive load = 1 Gate pulse: 10 V, 100 s, TJ = 25 C 400 mA SWITCHING PARAMETER SYMBOL Typical delay time tgd Typical rise time tgr Typical turn-off time tq TEST CONDITIONS TJ = 25 C Gate current = 1 A, dlg/dt = 1 A/s Vd = 0.67 % VDRM ITM = 300 A, - dl/dt = 15 A/s; TJ = TJ maximum VR = 50 V; dV/dt = 20 V/s; gate 0 V, 100 VALUES UNITS 1 2 s 50 to 200 BLOCKING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 50 mA 50 Hz, circuit to base, all terminals shorted, t = 1 s 3500 V TJ = TJ maximum, exponential to 67 % rated VDRM 1000 V/s Maximum peak reverse and off-state leakage current IRRM, IDRM TJ = 125 C RMS insulation voltage VINS Critical rate of rise of off-state voltage dV/dt www.vishay.com 2 For technical questions, contact: indmodules@vishay.com Document Number: 94513 Revision: 04-May-10 VSK.136..PbF, VSK.142..PbF, VSK.162..PbF Series Thyristor/Diode and Vishay High Power Products Thyristor/Thyristor, 135 A to 160 A (New INT-A-PAK Power Modules) TRIGGERING PARAMETER SYMBOL Maximum peak gate power Maximum average gate power Maximum peak gate current TEST CONDITIONS VALUES PGM tp 5 ms, TJ = TJ maximum 12 PG(AV) f = 50 Hz, TJ = TJ maximum 3 IGM Maximum peak negative gate voltage - VGT VGT 10 TJ = 25 C Maximum gate voltage that will not trigger VGD Maximum gate current that will not trigger IGD Maximum rate of rise of turned-on current dI/dt V 2.5 TJ = TJ maximum IGT A 4 TJ = - 40 C Maximum required DC gate current to trigger W 3 tp 5 ms, TJ = TJ maximum TJ = - 40 C Maximum required DC gate voltage to trigger UNITS 1.7 Anode supply = 6 V, resistive load; Ra = 1 270 TJ = 25 C 150 TJ = TJ maximum 80 mA 0.3 V 10 mA 300 A/s VALUES UNITS TJ = TJ maximum, rated VDRM applied TJ = TJ maximum, ITM = 400 A rated VDRM applied THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction operating temperature range TEST CONDITIONS TJ - 40 to 125 Maximum storage temperature range TStg - 40 to 150 Maximum thermal resistance, junction to case per junction RthJC DC operation Maximum thermal resistance, case to heatsink per module RthCS Mounting surface, smooth, flat and greased C 0.16 K/W IAP to heatsink Mounting torque 10 % 0.18 0.05 A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound. Lubricated threads. busbar to IAP Approximate weight 4 to 6 Case style Nm 200 g 7.1 oz. New INT-A-PAK R CONDUCTION PER JUNCTION RECTANGULAR CONDUCTION AT TJ MAXIMUM SINUSOIDAL CONDUCTION AT TJ MAXIMUM DEVICES 180 120 90 60 30 180 120 90 60 UNITS 30 VSK.136 0.007 0.01 0.013 0.0155 0.017 0.009 0.012 0.014 0.015 0.017 VSK.142 0.0019 0.0019 0.0020 0.0020 0.0021 0.0018 0.0022 0.0023 0.0023 0.0020 VSK.162 0.0030 0.0031 0.0032 0.0033 0.0034 0.0029 0.0036 0.0039 0.0041 0.0040 K/W Note * Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC Document Number: 94513 Revision: 04-May-10 For technical questions, contact: indmodules@vishay.com www.vishay.com 3 VSK.136..PbF, VSK.142..PbF, VSK.162..PbF Series Thyristor/Diode and Thyristor/Thyristor, 135 A to 160 A (New INT-A-PAK Power Modules) Vishay High Power Products 350 VSK.136.. Series RthJC (DC) = 0.18 K/W 120 110 Conduction Angle 100 90 30 60 90 80 120 180 70 0 20 40 60 80 100 120 140 M axim um Averag e O n-state Pow er Loss (W ) Maximum Allowable Case Temperature (C) 130 DC 180 120 90 60 30 300 250 200 150 100 C o n d uc tio n P eriod VSK .136.. Se ries Per Junction TJ = 12 5C 50 0 0 50 Average Forward Current (A) Conduction Period 100 30 60 90 80 120 180 DC 70 0 50 100 150 200 Pea k H alf Sin e W a ve O n -sta te C urren t (A ) Maximum Allowable Case Temperature (C) 110 90 24 0 0 22 0 0 20 0 0 18 0 0 16 0 0 RMS Limit Conduction Angle VSK.136.. Series Per Junction TJ = 125C 50 0 0 30 60 90 120 150 10 100 Fig. 5 - Maximum Non-Repetitive Surge Current 35 0 0 Maxim um No n Repetitive Surge Curre nt V ers us Pulse Train D uratio n. C ontrol O f Co nductio n M ay Not Be M aintained. In itial TJ = 125C No V oltag e Re ap plie d Ra te d V Re ap plie d 30 0 0 RRM 25 0 0 20 0 0 15 0 0 VSK.1 36.. Se ries Pe r Ju nction 10 0 0 0 .0 1 0.1 1 Pulse Tra in D ura tion (s) Average On-state Current (A) Fig. 3 - On-State Power Loss Characteristics www.vishay.com 4 VSK.136.. Series Per Junction 14 0 0 1 Peak Ha lf Sine W a ve O n -sta te C urrent (A) Maximum Average On-state Power Loss (W) 180 120 90 60 30 100 In itial TJ = 125C at 60 Hz 0.0083 s at 50 Hz 0.0100 s 26 0 0 Number Of Equal Amplitude Half Cycle Current Pulses (N) 300 150 2 50 12 0 0 250 Fig. 2 - Current Ratings Characteristics 200 2 00 A t A ny R ate d Lo ad Co nditio n A n d W ith R ated VRRM A pplied Follo w ing Surge . 28 0 0 Average On-state Current (A) 250 1 50 Fig. 4 - On-State Power Loss Characteristics 30 0 0 VSK.136.. Series RthJC (DC) = 0.18 K/W 120 1 00 A vera ge O n -sta te C urrent (A) Fig. 1 - Current Ratings Characteristics 130 RM S Lim it Fig. 6 - Maximum Non-Repetitive Surge Current For technical questions, contact: indmodules@vishay.com Document Number: 94513 Revision: 04-May-10 VSK.136..PbF, VSK.142..PbF, VSK.162..PbF Series Thyristor/Diode and Vishay High Power Products Thyristor/Thyristor, 135 A to 160 A (New INT-A-PAK Power Modules) /W .01 = 0 4K SA 0 .0 W W K/ W W - 0 .4 K/ W 0 .6 R 200 K/ K/ K/ C onductio n Angle 250 25 08 300 0. 16 W 350 K/ 0. 180 120 90 60 30 12 400 R th 0. 0. M axim um Tota l O n -sta te Pow e r Loss (W ) 450 K/ W 150 1 K/ W 100 VSK.136.. Se rie s Pe r M odule TJ = 12 5C 50 0 0 50 100 150 200 250 300 0 Tota l R M S Outp ut C urre nt (A) 25 50 75 1 00 125 M axim um A llowab le Am bient Tem pera ture (C) Fig. 7 - On-State Power Loss Characteristics A hS Rt 90 0 0. 04 0 .2 W W R 50 0 K/ K/ - 60 0 08 /W 1K 180 (Sine ) 180 (Re ct) 12 0.0 0. W 0. 70 0 = 80 0 K/ M axim um To ta l P o we r Lo ss (W ) 1 0 00 K/ W 40 0 0 .3 5 30 0 2 x VSK.136.. Series Single P hase Brid ge C onnected T J = 125C 20 0 10 0 K/ W 0. 6 K /W 0 0 55 11 0 165 220 2 07 5 Total O utp ut C urre nt (A) 25 50 75 100 125 M axim um Allowab le Am bient Te m p era ture (C ) Fig. 8 - On-State Power Loss Characteristics Rt A hS 12 0 0 = 0. 04 W R 3 x VSK.1 3 6.. Serie s Th ree Ph a se B rid g e C o n n ec te d TJ = 1 2 5C K/ - 0 .1 60 0 30 0 08 0.1 W 0. 120 (Rec t) 90 0 K/ M a xim u m To ta l Po w e r Lo ss (W ) 15 0 0 K/ W 6K / W 0 . 25 K/ W 0 .4 K /W 1 K/ W 0 0 10 0 20 0 3 00 To ta l O u tp u t C u rre nt (A) 4 000 25 50 75 1 00 1 25 M axim u m A llo w a b le A m b ien t Tem p e ra tu re (C) Fig. 9 - On-State Power Loss Characteristics Document Number: 94513 Revision: 04-May-10 For technical questions, contact: indmodules@vishay.com www.vishay.com 5 VSK.136..PbF, VSK.142..PbF, VSK.162..PbF Series Thyristor/Diode and Thyristor/Thyristor, 135 A to 160 A (New INT-A-PAK Power Modules) Vishay High Power Products 35 0 VSK.142.. Series R thJC (D C ) = 0.18 K/W 120 110 C o nd uctio n Angle 100 30 90 60 90 80 120 180 70 0 30 60 90 1 20 1 50 M axim um Averag e O n -state Pow er Loss (W ) M a xim um Allo w ab le C ase Tem peratur e (C) 130 DC 180 120 90 60 30 30 0 25 0 20 0 R M S L im it 15 0 C o nd u c tio n Pe rio d 10 0 VSK .1 4 2 .. Se rie s P er Ju n c tio n TJ = 1 2 5C 50 0 0 50 Fig. 10 - Current Ratings Characteristics VSK.1 4 2 .. Se rie s R thJC (D C ) = 0 .1 8 K /W 120 110 C o n d uc tio n P e rio d 100 30 60 90 90 120 80 180 DC 70 0 50 100 15 0 200 15 0 RMS Lim it 10 0 C o nd uc tio n Angle VSK .142.. Series Per Junction TJ = 12 5C 0 60 90 1 20 1 50 Averag e O n-state C urren t (A ) Fig. 12 - On-State Power Loss Characteristics www.vishay.com 6 A t A ny Rated Lo ad Co nditio n A n d W ith R ated V RRM A pplied Follo w ing Surge . In itial TJJ= 125C at 60 Hz 0.0083 s at 50 Hz 0.0100 s 40 0 0 35 0 0 30 0 0 25 0 0 20 0 0 VSK.142.. Series Per Junction 10 100 Fig. 14 - Maximum Non-Repetitive Surge Current Pea k H alf Sin e W ave O n -sta te C urren t (A) M axim um A ve ra ge O n -sta te Po w er Lo ss (W ) 180 120 90 60 30 30 45 0 0 1 25 0 0 2 50 N um b er O f Eq ua l A m p litud e H a lf Cy cle C urrent P ulses (N ) Fig. 11 - Current Ratings Characteristics 50 2 00 15 0 0 25 0 Averag e O n-state C urrent (A) 20 0 1 50 Fig. 13 - On-State Power Loss Characteristics Peak H a lf Sin e W a ve O n -stat e C urren t (A) M axim um Allow a ble C ase Tem perature (C) 130 1 00 Averag e O n-state C urren t (A ) A vera ge Forw a rd C urrent (A) 5 00 0 M axim um Non Repetitive Surge Current V e rsus Pulse Train D uratio n. C o ntro l O f Co nductio n Ma y No t Be M aintained . 4 50 0 In itial TJJ= 125C N o V oltag e Re a pp lied Ra te d VR R M Re a pp lie d 4 00 0 3 50 0 3 00 0 2 50 0 2 00 0 VSK.1 42.. Se rie s Pe r Ju nction 1 50 0 0 .0 1 0 .1 1 Pu lse Tra in D uration (s) Fig. 15 - Maximum Non-Repetitive Surge Current For technical questions, contact: indmodules@vishay.com Document Number: 94513 Revision: 04-May-10 VSK.136..PbF, VSK.142..PbF, VSK.162..PbF Series Thyristor/Diode and Vishay High Power Products Thyristor/Thyristor, 135 A to 160 A (New INT-A-PAK Power Modules) SA W /W =0 4K R th 0.0 K/ .0 1 K/ W K/ W R - 0 .6 K/ 08 200 25 0. 0 .4 W 0. W K/ 180 120 90 60 30 300 K/ 16 12 0. 0. M axim um Total O n-state Pow e r Lo ss (W ) 400 W K/ W C o nductio n A n g le 100 1K /W VSK.142.. Se rie s Per M odule TJ = 125C 0 0 50 100 150 200 250 Tota l R M S O utp ut C urre nt (A) 30 0 25 50 75 10 0 12 5 M axim um A llowa ble A m b ient Tem perature (C) Fig. 16 - On-State Power Loss Characteristics 1 00 0 R th - 0 .2 100 2 00 To ta l O u tp ut C u rre nt (A ) R 0 /W 1K 0 W 2K /W 0.1 6K /W 2 x VSK .1 4 2.. Se ries Sin g le P h a se Brid g e C o n n ec te d T J = 12 5C 20 0 K/ .0 =0 40 0 W 180 (Sine ) 180 (Re ct) 60 0 K/ 0 .1 08 SA 04 M a xim um Tota l P o w er Lo ss (W ) 0. 0. 80 0 5K /W 0 .6 K /W 0 3 00 25 50 75 10 0 12 5 M axim um A llowa ble A m b ient Tem perature (C) Fig. 17 - On-State Power Loss Characteristics S R th 0. 04 A 06 W R 0.1 K/ W 0.0 8 00 / 2K 0. 120 (Rec t) 0.0 W 12 0 0 = K/ Ma xim u m Total Power Lo ss (W ) 16 0 0 8K /W K/ W 3 x VSK.142.. Series Three P hase Brid ge 0 .1 6 K/ W C o nnected 0.2 K/ W TJ = 125C 4 00 0 0 5 0 10 0 1 5 0 20 0 25 0 30 0 35 0 4 0 0 450 0 Total O utp ut C urre nt (A) 25 50 75 10 0 12 5 M axim um A llowab le Am bie nt Tem perature (C) Fig. 18 - On-State Power Loss Characteristics Document Number: 94513 Revision: 04-May-10 For technical questions, contact: indmodules@vishay.com www.vishay.com 7 VSK.136..PbF, VSK.142..PbF, VSK.162..PbF Series Thyristor/Diode and Thyristor/Thyristor, 135 A to 160 A (New INT-A-PAK Power Modules) Vishay High Power Products 40 0 VSK.162.. Series R thJ C (D C ) = 0.16 K/W 120 110 C o nd uc tio n Angle 100 90 30 60 90 80 120 180 70 0 30 60 90 1 20 150 180 M a xim um A vera g e O n -sta te Pow e r Lo ss (W ) M a xim um A llow ab le C a se Tem p era ture (C) 130 DC 180 120 90 60 30 35 0 30 0 25 0 20 0 RM S Lim it 15 0 C o n du c tio n Pe rio d 10 0 VSK.162.. Series Per Junctio n TJ = 125C 50 0 0 30 Averag e Fo rw ard C urrent (A) Fig. 19 - Current Ratings Characteristics 4 50 0 VSK .162.. Series R thJC (DC ) = 0.16 K/W 1 20 1 10 1 00 C on d uctio n P e rio d 30 90 60 80 90 120 70 180 DC 60 0 50 100 15 0 20 0 2 50 300 In itial TJ = 125C 4 00 0 at 60 Hz 0.0083 s at 50 Hz 0.0100 s 3 50 0 3 00 0 2 50 0 2 00 0 VSK.162.. Series Per Jun ction 1 50 0 1 Fig. 20 - Current Ratings Characteristics 10 3 00 180 120 90 60 30 2 50 2 00 RM S Lim it 1 50 1 00 50 C o nd uc tio n Angle 0 0 20 40 60 8 0 10 0 1 20 1 40 1 6 0 1 8 0 Averag e O n-state C urren t (A) Fig. 21 - On-State Power Loss Characteristics www.vishay.com 8 Peak Ha lf Sine W av e O n -sta te C urrent (A) 50 0 0 VSK .162.. Se ries Per Junction TJ = 125C 10 0 Fig. 23 - Maximum Non-Repetitive Surge Current 4 00 M axim um Averag e O n-state Pow er Loss (W ) A t A ny R ate d Lo ad C on dition A n d W ith Rate d VRRM A pplie d Fo llow ing Surg e. Num b er O f Eq ua l Am p litud e H a lf C ycle C urrent P ulse s (N) A vera ge O n -sta te C urrent (A) 3 50 9 0 1 2 0 15 0 1 80 2 10 2 4 0 2 7 0 Fig. 22 - On-State Power Loss Characteristics Pea k H alf Sin e W a ve O n-state C urren t (A ) M axim um Allow a b le C ase Tem perature (C) 1 30 60 Averag e O n -sta te C urren t (A ) M axim um Non Repetitive Surge Current V e rsus Pulse Tra in D uratio n. C o ntro l O f Co nductio n Ma y No t Be M aintained . In itia l TJ = 125C No V olta ge Re ap plied Ra te d VR R M Re ap plie d 45 0 0 40 0 0 35 0 0 30 0 0 25 0 0 20 0 0 VSK .162.. Series Per Junction 15 0 0 0.0 1 0 .1 1 Pu lse Tra in D uration (s) Fig. 24 - Maximum Non-Repetitive Surge Current For technical questions, contact: indmodules@vishay.com Document Number: 94513 Revision: 04-May-10 VSK.136..PbF, VSK.142..PbF, VSK.162..PbF Series Thyristor/Diode and Vishay High Power Products Thyristor/Thyristor, 135 A to 160 A (New INT-A-PAK Power Modules) 0. 0 W = K/ A hS K/ Rt W 2 K/ W R C onductio n An gle W K/ 0 .1 200 08 W 0.1 300 04 0. K/ 400 06 180 120 90 60 30 500 0. 0. M a xim um T ota l O n-state Pow e r Loss (W ) 600 6K /W 0.2 K/ W VSK.162.. Se rie s Pe r M odule TJ = 125C 100 0 0 100 200 400 0 300 Tota l RM S O utp ut C urre nt (A) 25 50 75 100 125 M axim um A llowab le Am b ie nt Tem p era ture (C) Fig. 25 - On-State Power Loss Characteristics 0. 8 00 W 0.3 3 00 0 .4 K/ R 0.2 - 4 00 W K/ 5 00 W 04 180 (Sine ) 180 (Re ct) K/ 0. 6 00 12 K/ = 0. A hS 7 00 08 Rt M axim um Total P ower Lo ss (W ) 9 00 W K/ W K/ W 2 x VSK.162.. Series 0 .6 K/ W Single Phase Brid ge 1 K/ W C onnected TJ = 125C 2 00 1 00 0 0 50 100 15 0 20 0 25 0 Tota l O utput C urrent (A) 0 3 00 25 50 75 10 0 12 5 M axim um A llo wa ble A m b ient Tem perature (C) Fig. 26 - On-State Power Loss Characteristics 04 A K/ 1 2 50 S R th 0. W W K/ K/ R 0 .1 0 .2 5 00 2 120 (Rect) 7 50 08 0. 0 0. 1 0 00 = W M axim u m To tal Po wer Loss (W ) 1 5 00 2 K /W K/ W 3 x VSK.162.. Series 0 .3 K /W Three Phase Brid ge 0. 6 K / W C onnected TJ = 12 5C 2 50 0 0 50 1 0 0 15 0 2 00 25 0 3 0 0 3 5 0 4 00 4050 Tota l Output C urrent (A) 25 50 75 100 125 M a xim um Allo w a b le A m b ie n t Te m p era tu re (C) Fig. 27 - On-State Power Loss Characteristics Document Number: 94513 Revision: 04-May-10 For technical questions, contact: indmodules@vishay.com www.vishay.com 9 VSK.136..PbF, VSK.142..PbF, VSK.162..PbF Series Vishay High Power Products Thyristor/Diode and Thyristor/Thyristor, 135 A to 160 A (New INT-A-PAK Power Modules) 1 Transient Thermal Impedance Z thJC Instantaneous On-state Current (A) 10000 1000 TJ = 25C TJ = 125C 100 10 VSK.136.. Series Per Junction 1 0 1 2 3 4 5 Steady State Value (DC Operation) 0.1 0.01 VSK.136.. Series 0.001 0.001 Instantaneous On-state Voltage (V) Fig. 28 - On-State Voltage Drop Characteristics 1 1000 Transient Thermal Impedance Z thJC Instantaneous On-state Current (A) 10 Fig. 31 - Thermal Impedance ZthJC Characteristics 10000 TJ = 25C T = 125C J 100 10 VSK.142.. Series Per Junction 1 0 1 2 3 4 Steady State Value (DC Operation) 0.1 VSK.142.. Series 0.01 0.01 5 Instantaneous On-state Voltage (V) 0.1 1 Square Wave Pulse Duration (s) Fig. 29 - On-State Voltage Drop Characteristics Fig. 32 - Thermal Impedance ZthJC Characteristics 10 1 1000 TJ = 25C TJ = 125C 100 10 VSK.162.. Series Per Junction 1 0 1 2 3 4 5 Instantaneous On-state Voltage (V) Fig. 30 - On-State Voltage Drop Characteristics www.vishay.com 10 Transient Thermal Impedance Z thJC 10000 Instantaneous On-state Current (A) 0.01 0.1 1 Square Wave Pulse Duration (s) Steady State Value (DC Operation) 0.1 VSK.162.. Series 0.01 0.01 0.1 1 Square Wave Pulse Duration (s) 10 Fig. 33 - Thermal Impedance ZthJC Characteristics For technical questions, contact: indmodules@vishay.com Document Number: 94513 Revision: 04-May-10 VSK.136..PbF, VSK.142..PbF, VSK.162..PbF Series Thyristor/Diode and Vishay High Power Products Thyristor/Thyristor, 135 A to 160 A (New INT-A-PAK Power Modules) 10 Rec ta ng ula r g a te p ulse a )Re c o m m end e d lo a d line fo r ra ted d I/d t: 20 V, 20 W tr = 0.5 s, tp >= 6 s b )Re c o m m end e d loa d line fo r <= 30% ra ted d I/d t: 15 V , 40 W tr = 1 s, tp >= 6 s (1) (2) (3) (4) PG M PG M PG M PG M = = = = 200 W , tp = 300 s 60 W , tp = 1 m s 30 W , tp = 2 m s 12 W , tp = 5 m s (4) (3 ) (2) (a) (b ) T J = -40 C T J = 12 5 C 1 T J = 25 C In stan ta neous G a te V olta ge (V ) 1 00 (1) VG D IG D 0 .1 0 .0 0 1 VSK.1 3 6 ..1 4 2 ..1 6 2 .. Se ries 0.0 1 0 .1 Frequen cy Lim ited by PG (AV ) 1 10 100 1 00 0 Instan ta n eous G a te C urren t (A ) Fig. 34 - Gate Characteristics ORDERING INFORMATION TABLE Device code VSK T 162 1 2 3 / 16 PbF 4 5 1 - Module type 2 - Circuit configuration 3 - Current rating: IT(AV) 4 - Voltage code x 100 = VRRM 5 - PbF = Lead (Pb)-free Note * To order the optional hardware go to www.vishay.com/doc?95172 CIRCUIT CONFIGURATION VSKT... VSKH... ~ + VSKL... ~ + + + + - K1 + - - - - K2 K2 G2 K1 G1 G1 ~ G2 LINKS TO RELATED DOCUMENTS Dimensions Document Number: 94513 Revision: 04-May-10 www.vishay.com/doc?95067 For technical questions, contact: indmodules@vishay.com www.vishay.com 11 Outline Dimensions Vishay Semiconductors INT-A-PAK IGBT/Thyristor 29 (1.15) 28 (1.10) 9 (0.33) 30 (1.18) 7 (0.28) DIMENSIONS in millimeters (inches) O 6.5 (0.25 DIA) 80 (3.15) 23 (0.91) 7 6 4 5 (0.20) 5 23 (0.91) 1 3 screws M6 x 10 2 2.8 x 0.8 (0.11 x 0.03) 14.5 (0.57) 35 (1.38) 17 (0.67) 3 66 (2.60) 37 (1.44) 94 (3.70) Document Number: 95067 Revision: 15-Feb-08 For technical questions, contact: indmodules@vishay.com www.vishay.com 1 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1