Document Number: 94513 For technical questions, contact: indmodules@vishay.com www.vishay.com
Revision: 04-May-10 1
Thyristor/Diode and Thyristor/Thyristor, 135 A to 160 A
(New INT-A-PAK Power Modules)
VSK.136..PbF, VSK.142..PbF, VSK.162..PbF Series
Vishay High Power Products
FEATURES
• High voltage
• Electrically isolated by DBC ceramic (AI2O3)
• 3500 VRMS isolating voltage
• Industrial standard package
• High surge capability
• Glass passivated chips
• Modules uses high voltage power thyristor/diodes in three
basic configurations
• Simple mounting
• UL approved file E78996
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for multiple level
APPLICATIONS
• DC motor control and drives
• Battery charges
• Welders
• Power converters
• Lighting control
• Heat and temperature control
ELECTRICAL SPECIFICATIONS
PRODUCT SUMMARY
IT(AV) 135 A to 160 A
New INT-A-PAK
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VSK.136.. VSK.142.. VSK.162.. UNITS
IT(AV) 85 °C 135 140 160 A
IT(RMS) 300 310 355
A
ITSM
50 Hz 3200 4500 4870
60 Hz 3360 4712 5100
I2t50 Hz 51.5 102 119 kA2s
60 Hz 47 92.5 108
I2√t 515.5 1013 1190 kA2√s
VRRM Range 400 to 1600 V
TJRange - 40 to 125 °C
VOLTAGE RATINGS
TYPE
NUMBER
VOLTAGE
CODE
VRRM/VDRM, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
VRSM/VDSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
IRRM/IDRM
AT 125 °C
mA
VSK.136
VSK.142
VSK.162
04 400 500
50
08 800 900
12 1200 1300
14 1400 1500
16 1600 1700
www.vishay.com For technical questions, contact: indmodules@vishay.com Document Number: 94513
2Revision: 04-May-10
VSK.136..PbF, VSK.142..PbF, VSK.162..PbF Series
Vishay High Power Products Thyristor/Diode and
Thyristor/Thyristor, 135 A to 160 A
(New INT-A-PAK Power Modules)
FORWARD CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS VSK.136 VSK.142 VSK.162 UNITS
Maximum average on-state current
at case temperature IT(AV) 180° conduction, half sine wave 135 140 160 A
85 85 85 °C
Maximum RMS on-state current IT(RMS) As AC switch 300 310 355
A
Maximum peak, one-cycle
on-state, non-repetitive
surge current
ITSM
t = 10 ms No voltage
reapplied
Sine half wave,
initial TJ =
TJ maximum
3200 4500 4870
t = 8.3 ms 3360 4712 5100
t = 10 ms 100 % VRRM
reapplied
2700 3785 4100
t = 8.3 ms 2800 3963 4300
Maximum I2t for fusing I2t
t = 10 ms No voltage
reapplied
51.5 102 119
kA2s
t = 8.3 ms 47 92.5 108
t = 10 ms 100 % VRRM
reapplied
36.5 71.6 84
t = 8.3 ms 33.3 65.4 76.7
Maximum I2√t for fusing I2√t t = 0.1 ms to 10 ms, no voltage reapplied 515.5 1013 1190 kA2√s
Low level value of threshold voltage VT(TO)1 (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ maximum 0.86 0.83 0.8 V
High level value of threshold voltage VT(TO)2 (I > π x IT(AV)), TJ maximum 1.05 1 0.98
Low level value on-state
slope resistance rt1 (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ maximum 2.02 1.78 1.67
mΩ
High level value on-state
slope resistance rt2 (I > π x IT(AV)), TJ maximum 1.65 1.43 1.38
Maximum on-state voltage drop VTM ITM = π x IT(AV), TJ = 25 °C, 180° conduction 1.57 1.55 1.54 V
Maximum forward voltage drop VFM ITM = π x IT(AV), TJ = 25 °C, 180° conduction 1.57 1.55 1.54 V
Maximum holding current IHAnode supply = 6 V initial IT = 30 A, TJ = 25 °C 200
mA
Maximum latching current IL
Anode supply = 6 V resistive load = 1 Ω
Gate pulse: 10 V, 100 μs, TJ = 25 °C 400
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Typical delay time tgd TJ = 25 °C Gate current = 1 A, dlg/dt = 1 A/μs
Vd = 0.67 % VDRM
1
μs
Typical rise time tgr 2
Typical turn-off time tq
ITM = 300 A, - dl/dt = 15 A/μs; TJ = TJ maximum
VR = 50 V; dV/dt = 20 V/μs; gate 0 V, 100 Ω50 to 200
BLOCKING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum peak reverse and
off-state leakage current
IRRM,
IDRM
TJ = 125 °C 50 mA
RMS insulation voltage VINS
50 Hz, circuit to base,
all terminals shorted, t = 1 s 3500 V
Critical rate of rise of
off-state voltage dV/dt TJ = TJ maximum,
exponential to 67 % rated VDRM
1000 V/μs
Document Number: 94513 For technical questions, contact: indmodules@vishay.com www.vishay.com
Revision: 04-May-10 3
VSK.136..PbF, VSK.142..PbF, VSK.162..PbF Series
Thyristor/Diode and
Thyristor/Thyristor, 135 A to 160 A
(New INT-A-PAK Power Modules)
Vishay High Power Products
Note
• Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum peak gate power PGM tp ≤ 5 ms, TJ = TJ maximum 12 W
Maximum average gate power PG(AV) f = 50 Hz, TJ = TJ maximum 3
Maximum peak gate current IGM
tp ≤ 5 ms, TJ = TJ maximum
3A
Maximum peak negative
gate voltage - VGT 10
V
Maximum required DC
gate voltage to trigger VGT
TJ = - 40 °C
Anode supply = 6 V,
resistive load; Ra = 1 Ω
4
TJ = 25 °C 2.5
TJ = TJ maximum 1.7
Maximum required DC
gate current to trigger IGT
TJ = - 40 °C 270
mATJ = 25 °C 150
TJ = TJ maximum 80
Maximum gate voltage
that will not trigger VGD
TJ = TJ maximum, rated VDRM applied
0.3 V
Maximum gate current
that will not trigger IGD 10 mA
Maximum rate of rise of
turned-on current dI/dt TJ = TJ maximum, ITM = 400 A rated VDRM applied 300 A/μs
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction operating
temperature range TJ- 40 to 125
°C
Maximum storage
temperature range TStg - 40 to 150
Maximum thermal resistance,
junction to case per junction RthJC DC operation 0.18 0.16
K/W
Maximum thermal resistance,
case to heatsink per module RthCS Mounting surface, smooth, flat and greased 0.05
Mounting
torque ± 10 %
IAP to heatsink A mounting compound is recommended and the
torque should be rechecked after a period of
3 hours to allow for the spread of the compound.
Lubricated threads.
4 to 6 Nm
busbar to IAP
Approximate weight 200 g
7.1 oz.
Case style New INT-A-PAK
ΔR CONDUCTION PER JUNCTION
DEVICES
SINUSOIDAL CONDUCTION
AT TJ MAXIMUM
RECTANGULAR CONDUCTION
AT TJ MAXIMUM UNITS
180° 120° 90° 60° 30° 180° 120° 90° 60° 30°
VSK.136 0.007 0.01 0.013 0.0155 0.017 0.009 0.012 0.014 0.015 0.017
K/WVSK.142 0.0019 0.0019 0.0020 0.0020 0.0021 0.0018 0.0022 0.0023 0.0023 0.0020
VSK.162 0.0030 0.0031 0.0032 0.0033 0.0034 0.0029 0.0036 0.0039 0.0041 0.0040
www.vishay.com For technical questions, contact: indmodules@vishay.com Document Number: 94513
4Revision: 04-May-10
VSK.136..PbF, VSK.142..PbF, VSK.162..PbF Series
Vishay High Power Products Thyristor/Diode and
Thyristor/Thyristor, 135 A to 160 A
(New INT-A-PAK Power Modules)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
Fig. 3 - On-State Power Loss Characteristics
Fig. 4 - On-State Power Loss Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
70
80
90
100
110
120
130
0 20 40 60 80 100 120 140
30°
60°
90°
120°
180°
Maximum Allowable Case Temperature (°C)
Conduction Angle
Average Forward Current (A)
VSK.136.. Series
RthJC (DC) = 0.18 K/W
70
80
90
100
110
120
130
0 50 100 150 200 250
DC
30°
60°
90°
120°
180°
Average On-state Current (A)
Maximum Allowable Case Temperature (°C)
Conduction Period
VSK.136.. Series
RthJC (DC) = 0.18 K/W
0
50
100
150
200
250
300
0 30 60 90 120 150
RMS Limit
Conduction Angle
Maximum Average On-state Power Loss (W)
Average On-state Current (A)
180
120
90
60
30
VSK.136.. Series
Per Junction
TJ = 125°C
0
50
100
150
200
250
300
350
0 50 100 150 200 250
RMS Limit
Conduction Period
Maximum Average On-state Power Loss (W)
Average On-state Current (A)
DC
180
120
90
60
30
VSK.136.. Series
Per Junction
T = 12 5°C
J
1200
1400
1600
1800
2000
2200
2400
2600
2800
3000
001011
Number Of Equal Amplitude Half Cycle Current Pulses (N)
At A ny Rated Load Condition And With
Rated V Applied Following Surge.
RRM
Peak Half Sine Wave On-state Current (A)
In itial T = 125°C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
J
VSK.136.. Series
Per Junction
1000
1500
2000
2500
3000
3500
11.010.0
Peak Half Sine Wave On-state Current (A)
Pulse Train Duration (s)
Maximum Non Repetitive Surge Current
Of Conduction May Not Be Maintained.
VSK.1 36.. Series
Per Junction
In itia l T = 125°C
No Voltage Reapplied
Rated V Reapplied
J
RRM
Versus Pulse Train Duration. Control
Document Number: 94513 For technical questions, contact: indmodules@vishay.com www.vishay.com
Revision: 04-May-10 5
VSK.136..PbF, VSK.142..PbF, VSK.162..PbF Series
Thyristor/Diode and
Thyristor/Thyristor, 135 A to 160 A
(New INT-A-PAK Power Modules)
Vishay High Power Products
Fig. 7 - On-State Power Loss Characteristics
Fig. 8 - On-State Power Loss Characteristics
Fig. 9 - On-State Power Loss Characteristics
0255075100125
M axim um Allo w able Am bient Tem pera ture (°C)
0.04K/W
R=0.01 K/W- ΔR
thSA
0.08K/W
0.12K/W
0.16K/W
0.4K/W
0.25K/W
0.6K/W
1K/W
0
50
100
150
200
250
300
350
400
450
0 50 100 150 200 250 300
180
120
90
60
30
Total RMS Output Current (A)
Maximum Total On-state Power Loss (W )
Conduction Angle
VSK.136.. Serie s
Per Module
T = 12 5°C
J
0255075100125
Maximum Allowable Ambient Temperature (°C)
0.04K/W
0.08K/W
0.12K/W
0.2K/W
0.35K/W
0.6K/W
0
100
200
300
400
500
600
700
800
900
1000
0 55 110 165 220 275
Total Output Current (A)
Maximum Total Power Loss (W)
2 x VSK.136.. Series
Single Phase Bridge
Connected
T = 12 5°C
J
180
(Sine)
180
(Rect)
R=0.01K/W-Δ R
thA
S
0255075100125
M a xim u m A llo w a b le A m b ien t Te m p eratu re (°C)
R=0.04K/W-Δ R
0.08K/W
0.1K/W
0.16K/W
0.25K/W
0.4K/W
1K/W
thSA
0
300
600
900
1200
1500
0 100 200 300 400
Total Output C urrent (A)
Maximum Total Power Loss (W)
120
(Rect)
3 x VSK.136.. Series
Three Phase Bridge
Connected
T = 12 5°C
J
www.vishay.com For technical questions, contact: indmodules@vishay.com Document Number: 94513
6Revision: 04-May-10
VSK.136..PbF, VSK.142..PbF, VSK.162..PbF Series
Vishay High Power Products Thyristor/Diode and
Thyristor/Thyristor, 135 A to 160 A
(New INT-A-PAK Power Modules)
Fig. 10 - Current Ratings Characteristics
Fig. 11 - Current Ratings Characteristics
Fig. 12 - On-State Power Loss Characteristics
Fig. 13 - On-State Power Loss Characteristics
Fig. 14 - Maximum Non-Repetitive Surge Current
Fig. 15 - Maximum Non-Repetitive Surge Current
70
80
90
100
110
120
130
0306090120150
30
60
90
120
180
M a xim um A llo wab le C ase Tem p era tur e (°C)
Conduction Angle
Average Forward Current (A)
VSK.142.. Series
R (D C ) = 0.18 K/W
thJC
70
80
90
100
110
120
130
0 50 100 150 200 250
DC
30
60
90
120
180
Average On-state Current (A)
Maximum Allowable Case Temperature (°C)
Conduction Period
VSK.142.. Series
R (D C ) = 0.18 K/W
thJC
0
50
100
150
200
250
0306090120150
RMS Limit
Conduction Angle
Maximum Average On-state Power Loss (W)
Average On-state Current (A)
180
120
90
60
30
VSK.142.. Series
Per Junction
T = 12 5°C
J
0
50
100
150
200
250
300
350
050100150200250
DC
180
120
90
60
30
RMS Limit
Conduction Period
Maximum Average On-state Power Loss (W)
Average On-state Current (A)
VSK.142.. Series
Per Junction
T = 12 5°C
J
1500
2000
2500
3000
3500
4000
4500
001011
Number Of Equa l Amplitude Half Cycle Current Pulses (N)
Peak Half Sine W ave O n-state C urren t (A)
J
In itial T
= 125°C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
At A ny Rated Load Condition And With
Rated V Applied Following Surge.
VSK.142.. Series
Per Junction
RRM
J
1500
2000
2500
3000
3500
4000
4500
5000
11.010.0
Pea k Half Sine W ave O n-state Current (A)
Pulse Train Duration (s)
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
J
No Voltage Reapplied
Rated V Reapplied
VSK.142.. Series
Per Junction
RRM
In itial T
= 125°C
J
Document Number: 94513 For technical questions, contact: indmodules@vishay.com www.vishay.com
Revision: 04-May-10 7
VSK.136..PbF, VSK.142..PbF, VSK.162..PbF Series
Thyristor/Diode and
Thyristor/Thyristor, 135 A to 160 A
(New INT-A-PAK Power Modules)
Vishay High Power Products
Fig. 16 - On-State Power Loss Characteristics
Fig. 17 - On-State Power Loss Characteristics
Fig. 18 - On-State Power Loss Characteristics
R=0.01K/W-Δ R
0255075100125
M axim um A llowa ble Am bient Tem pera tu re (°C)
thSA
0.04K/W
1K/W
0.6K/W
0.4K/W
0.25K/W
0.08K/W
0.12K/W
0.16K/W
0
100
200
300
400
0 50 100 150 200 250 300
Total RM S Output Current (A)
Maximum Total On-state Power Loss (W )
Conduction Angle
VSK.142.. Serie s
Per Module
T = 12 5°C
J
180
120
90
60
30
R=0.01K/W-Δ R
0255075100125
Maximum Allowable Ambient Temperature (°C)
thSA
0.6K/W
0.25K/W
0.16K/W
0.12K/W
0.08K/W
0.04K/W
0
200
400
600
800
1000
0100200300
Total Output C urrent (A)
Maximum Total Power Loss (W)
180
(Sine)
180
(Rect)
2 x VSK.142.. Series
Single Phase Bridge
Connected
T = 1 25°C
J
0255075100125
M axim um Allo w able Am bie nt Tem pera ture (°C)
R=0.02K/W-Δ R
thSA
0.04K/W
0.06K/W
0.08K/W
0.1K/W
0.16K/W
0.2K/W
0
400
800
1200
1600
0 50 100 150 200 250 300 350 400 450
Total Output Current (A)
Maximum Total Power Loss (W)
120
(Rect)
3 x VSK.142.. Series
Three Phase Bridge
Connected
T = 125°C
J
www.vishay.com For technical questions, contact: indmodules@vishay.com Document Number: 94513
8Revision: 04-May-10
VSK.136..PbF, VSK.142..PbF, VSK.162..PbF Series
Vishay High Power Products Thyristor/Diode and
Thyristor/Thyristor, 135 A to 160 A
(New INT-A-PAK Power Modules)
Fig. 19 - Current Ratings Characteristics
Fig. 20 - Current Ratings Characteristics
Fig. 21 - On-State Power Loss Characteristics
Fig. 22 - On-State Power Loss Characteristics
Fig. 23 - Maximum Non-Repetitive Surge Current
Fig. 24 - Maximum Non-Repetitive Surge Current
70
80
90
100
110
120
130
0306090120150180
30
60
90
120
180
Maximum Allowable Case Temperature (°C)
Conduction Angle
Average Forward Current (A)
VSK.162.. Series
R (D C) = 0.16 K/W
thJC
60
70
80
90
100
110
120
130
0 50 100150200250300
DC
30
60
90
120
180
Average On-state Current (A)
Maximum Allowable Case Temperature (°C)
Conduction Period
VSK.162.. Series
R (DC) = 0.16 K/W
thJC
0
50
100
150
200
250
300
350
400
0 20406080100120140160180
RMS Limit
Conduction Angle
Maximum Average On-state Power Loss (W)
Average On-state Current (A)
VSK.162.. Series
Per Junction
T = 125°C
J
180
120
90
60
30
0
50
100
150
200
250
300
350
400
0 306090120150180210240270
DC
180
120
90
60
30
RMS Limit
Conduction Period
Maximum Average On-state Power Loss (W)
Average On-state Current (A)
VSK.162.. Series
Per Junction
T = 125°C
J
1500
2000
2500
3000
3500
4000
4500
001011
Num b er O f Equa l Am plitude Half C ycle Current Pulse s (N)
At Any Rated Load Condition And With
Rate d V A p p lie d Fo llow ing Surg e.
RRM
Peak Half Sine W ave O n-state Current (A )
In itia l T = 1 25°C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
VSK.162.. Series
Per Junction
J
1500
2000
2500
3000
3500
4000
4500
5000
11.010.0
Peak Half Sine Wave On-state Current (A)
Pulse Train Duration (s)
Maximum Non Repetitive Surge Current
Of Conduction May Not Be Maintained.
VSK.162.. Series
Per Junction
In itia l T = 125°C
No Voltage Reapplied
Rated V Reapplied
RRM
Versus Pulse Train Duration. Control
J
Document Number: 94513 For technical questions, contact: indmodules@vishay.com www.vishay.com
Revision: 04-May-10 9
VSK.136..PbF, VSK.142..PbF, VSK.162..PbF Series
Thyristor/Diode and
Thyristor/Thyristor, 135 A to 160 A
(New INT-A-PAK Power Modules)
Vishay High Power Products
Fig. 25 - On-State Power Loss Characteristics
Fig. 26 - On-State Power Loss Characteristics
Fig. 27 - On-State Power Loss Characteristics
0 25 50 75 100 125
M axim um Allow able Am b ie nt Tem pera ture (°C)
R=0.02K/W-Δ R
thSA
0.04K/W
0.06K/W
0.08K/W
0.1K/W
0.16K/W
0.2K/W
0
100
200
300
400
500
600
0 100 200 300 400
180
120
90
60
30
Total RMS Output Current (A)
Maximum Total On-state Power Loss (W)
Conduction Angle
VSK.162.. Series
Per Module
T = 12 5°C
J
R=0.04K/W-Δ R
0255075100125
M a xim um A llo wa ble A m bient Tem pera tu re (°C)
thS
A
0.08K/W
0.2K/W
1K/W
0.6K/W
0.4K/W
0.12K/W
0.3K/W
0
100
200
300
400
500
600
700
800
900
0 50 100 150 200 250 300
Total Output Current (A)
Maximum Total Power Loss (W)
2 x VSK.162.. Series
Single Phase Bridge
Connected
T = 12 5°C
J
180
(Sine)
180
(Rect)
0 25 50 75 100 125
M a xim um Allo w a ble A m b ie nt Te m p e ra tu re (°C)
R=0.02K/W-Δ R
0.04K/W
0.2K/W
0.08K/W
0.12K/W
0.6K/W
0.3K/W
thSA
0
250
500
750
1000
1250
1500
0 50 100 150 200 250 300 350 400 450
Total Output Current (A)
Maximum Total Power Loss (W)
120
(Rect)
3 x VSK.162.. Series
Three Phase Bridge
Connected
T = 125°C
J
www.vishay.com For technical questions, contact: indmodules@vishay.com Document Number: 94513
10 Revision: 04-May-10
VSK.136..PbF, VSK.142..PbF, VSK.162..PbF Series
Vishay High Power Products Thyristor/Diode and
Thyristor/Thyristor, 135 A to 160 A
(New INT-A-PAK Power Modules)
Fig. 28 - On-State Voltage Drop Characteristics
Fig. 29 - On-State Voltage Drop Characteristics
Fig. 30 - On-State Voltage Drop Characteristics
Fig. 31 - Thermal Impedance ZthJC Characteristics
Fig. 32 - Thermal Impedance ZthJC Characteristics
Fig. 33 - Thermal Impedance ZthJC Characteristics
Instantaneous On-state Voltage (V)
Instantaneous On-state Current (A)
1
10
100
1000
10000
012345
T = 25˚C
J
T = 125˚C
VSK.136.. Series
Per Junction
J
Instantaneous On-state Voltage (V)
Instantaneous On-state Current (A)
1
10
100
1000
10000
012345
T = 125˚C
T = 25˚C
VSK.142.. Series
Per Junction
J
J
1
10
100
1000
10000
012345
T = 25˚C
J
T = 125˚C
VSK.162.. Series
Per Junction
J
Instantaneous On-state Voltage (V)
Instantaneous On-state Current (A)
Square Wave Pulse Duration (s)
Transient Thermal Impedance Z thJC
0.001
0.01
0.1
1
0.001 0.01 0.1 1 10
Steady State Value
(DC Operation)
VSK.136.. Series
Square Wave Pulse Duration (s)
Transient Thermal Impedance Z thJC
0.01
0.1
1
0.01 0.1 1 10
Steady State Value
(DC Operation)
VSK.142.. Series
Square Wave Pulse Duration (s)
Transient Thermal Impedance Z
thJC
0.01
0.1
1
0.01 0.1 1 10
Steady State Value
(DC Operation)
VSK.162.. Series
Document Number: 94513 For technical questions, contact: indmodules@vishay.com www.vishay.com
Revision: 04-May-10 11
VSK.136..PbF, VSK.142..PbF, VSK.162..PbF Series
Thyristor/Diode and
Thyristor/Thyristor, 135 A to 160 A
(New INT-A-PAK Power Modules)
Vishay High Power Products
Fig. 34 - Gate Characteristics
ORDERING INFORMATION TABLE
Note
• To order the optional hardware go to www.vishay.com/doc?95172
CIRCUIT CONFIGURATION
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95067
0.1
1
10
100
0.001 0.01 0.1 1 10 100 1000
(b)
(a)
Rectangular gate pulse
(4) (3) (2) (1)
In stanta neous Ga te Volta ge (V )
TJ = -40 °C
TJ = 25 °C
TJ = 125 °C
a)Recommended load line for
b)Re com mend ed loa d line fo r
VGD
IG D
(1) PGM = 200 W , tp = 300 s
(2) PGM = 60 W , tp = 1 m s
(3) PGM = 30 W , tp = 2 m s
(4) PGM = 12 W , tp = 5 m s
<= 30% rated dI/dt: 15 V, 40 W
tr = 1 s, tp >= 6 s
rated dI/dt: 20 V, 20 W
tr = 0.5 s, tp >= 6 s
VSK.136..142..162.. Series
Frequency Limited by PG(AV)
Instantan eous Gate Current (A)
1- Module type
2- Circuit configuration
3- Current rating: IT(AV)
4- Voltage code x 100 = VRRM
5- PbF = Lead (Pb)-free
Device code
51324
VSK T 162 / 16 PbF
-
+
VSKL...
-
+
~
K2
G2
-
+
~
K1
G1
-
+
VSKH...
-
+
~
K1 K2
G1 G2
-
+
VSKT...
Document Number: 95067 For technical questions, contact: indmodules@vishay.com www.vishay.com
Revision: 15-Feb-08 1
INT-A-PAK IGBT/Thyristor
Outline Dimensions
Vishay Semiconductors
DIMENSIONS in millimeters (inches)
80 (3.15)
Ø 6.5 (0.25 DIA)
30 (1.18)
9 (0.33)
7 (0.28)
28 (1.10)
29 (1.15)
37 (1.44)
5 (0.20)
2.8 x 0.8
(0.11 x 0.03)
7
6
5
4
123
23 (0.91)23 (0.91)17 (0.67)
35 (1.38)
14.5 (0.57)
3 screws M6 x 10 66 (2.60)
94 (3.70)
Document Number: 91000 www.vishay.com
Revision: 11-Mar-11 1
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