HARRIS SEMICOND SECTOR wD SEMICONDUCTOR 1N4248, 1N4249 December 1993 1A, 200V - 1000V Diodes Features Package High-Temperature Metallurgically Bonded, No Com- JEDEC STYLE DO-204 pression Contacts as Found in Diode-Constructed TOP VIEW Rectiflers Glass-Passivated Junction * 1A Operation at T, = 55C with No Thermal Runaway Typical Reverse Current Less than 0. 5A Exceeds Environmental Standard of MIL-STD-19500 Hermetically Sealed Package High-Temperature Soldering Guaranteed: 350C/10s/ 0.375 in. (9.5 mm) Lead Length e Description The 1N4245, 1N4246, 1N4247, 1N4248, and 1N4249 are glass-passivated transient voltage protected, silicon rectifi- ers intended for general-purpose applications. These rectifiers will dissipate up to 1000 watts in reverse Girection without damage. Voltage transients generated by household or industrial power lines are dissipated. These rectifiers are supplied in a JEDEC style DO-204 package. ANODE J CATHODE Symbol Absolute Maximum Ratings Supply Frequency of 60Hz, Resistive or Inductive Loads (Note 1) 1N4245 Maximum Peak (Repetitive) Reverse Voltage ......... VarM 200 Maximum RMS Input (Supply) Voltage For Resistive or Inductive Loads. ............0.0406 Vams 140 Maximum DC Reverse (Blocking) Voltage........... Vaioc) 200 Maximum Average Forward Current For Resistive or Inductive Loads,T, = 55C ............ lo 1 Maximum Peak Surge (Non-Repetitive) Forward Current For 8.3ms Half Sine Wave, Superimposed on Rated Load, Ty = SEO CL cee eee cece eee eee e eee eens lesm 50 Operating Temperature Range. NOTE: 1. In accordance with JEDEC registration format. Topn 65to +160 -65 to +160 Storage Temperature Range ........ 6... eee Tstg ~6510+200 -65 to +200 1N4246 1N4247 1N4248 1H4249 UNITS 400 600 800 1000 v 280 420 560 700 Vv 400 600 800 1000 Vv 1 1 1 1 A 50 50 50 50 A 65 to+160 -6510+160 -65to+160 C -65 to +200 -65to+200 -65to+200 C CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper |.C. Handling Procedures. Copyright Harris Corporation 1993 4-3 File Number 2093.1 GENERAL PURPOSE DIODES: bBE D MM 430ee71 0050299 OTT MBHAS Harris 1N4245, 1N4246, 1N4247HARRIS SEMICOND SECTOR b&E D MM 430e271 0050300 B41 MBHAS Specifications 1N4245, 1N4246, 1N4247, 1N4248, 1N4249 Electrical Specifications 1, = +25C, Unless Otherwise Specified LIMITS FOR ALL TYPES PARAMETERS SYMBOL MIN TYP MAX UNITS Maximum tnstantaneous Forward-Voltage Drop (at 1A) (Note 1) Ve : - 1.2 v Maximum Reverse Current: (Note 1) At Maximum OC Reverse (Blocking) Voltage, T, = +25C In - - 1 pA At Maximum DC Reverse (Blocking) Voltage, T, = +125C lp - - 25 pA At Average Full-Cycle, Lead Length = 0.375 in. (9.5mm), Ip - - 50 pA Ty = 55C Junction Capacitance (at 1MHz and Applied Reverse Voltage = 4V) Cy - 15 - pF NOTE: 1. In accordance with JEDEC registration format. Typical Performance Curves 1.0 1) T 55C < | J+ al hate WAVE alte ac 8.3MS SINGLE HALF-WAVE a os RESISTIVE OR E JEDEC METHOD e INDUCTIVE LOAD ug 2 0.375 (9.5MM) a be a LEAD LENGTHS cz NY = 0.6 Sa 30 NS = zs oN 3 wo Ms o Za Ms we 0.4 S& 20 ~ g g m oc 4 zE Ny wi ao > wi < 02 10 S 3 % = ag 0 25 50 75 100 125 4180 175 TL, LEAD TEMPERATURE (C) 200 FIGURE 1. MAXIMUM AVERAGE FORWARD OUTPUT CURRENT CHARACTERISTIC 1 10 100 N, NUMBER OF CYCLES AT 60Hz SINE WAVE FIGURE 2. MAXIMUM PEAK SURGE (NON-REPETITIVE) FORWARD CURRENT CHARACTERISTICHARRIS SEMICOND SECTOR b6E D MM 43902271 0050301 588 MBHAS 1N4245, 1N4246, 1N4247, 1N4248, 1N4249 Typical Performance Curves (Continued) PULSE DURATION = OUTY FACTOR = 2% of Ip, FORWARD CURRENT (A) 0.01 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Ve, FORWARD VOLTAGE DROP (V) FIGURE 3. TYPICAL INSTANTANEOUS FORWARD CURRENT CHARACTERISTIC = o C, CAPACITANCE (pF) 10 Vp, CATHODE - ANODE VOLTAGE (V) Ty = #75C In, REVERSE CURRENT (:A) Ty = 425C Qo 20 40 60 80 100 120 140 PERCENT OF PEAK REPETITIVE REVERSE VOLTAGE FIGURE 4. TYPICAL REVERSE LEAKAGE CURRENT CHARACTERISTICS Ty = 425C FREQUENCY = 1MHz 100 FIGURE 5. TYPICAL JUNCTION CAPACITANCE CHARACTERISTIC 4-5 GENERAL PURPOSE DIODES