V
RRM
= 5
0 V - 600 V
I
F
= 40 A
Features
• High Surge Capab
ility
DO-5 Package
• Types up to 600 V V
RRM
• Not ESD Sensitive
Note:
1. Standard p
olarity: Stud is
cathode
.
3. Stud is b
ase.
Parameter
Sy
mbol
1N1183A
(R)
1N118
4A
(R)
1N1188A
(R)
1N1190A
(R)
Unit
Repetitive peak
reverse
voltage
V
RRM
50
100
400
600
V
RMS reverse voltage
V
RMS
35
70
280
420
V
DC blocking
voltage
V
DC
50
100
400
600
V
Continuous
forward current
I
F
40
40
40
40
A
Operating tem
perature
T
j
-55 to 150
-55 to 150
-55 to 150
-55
to 150
°C
Storage temp
erature
T
stg
-55 to 150
-55 to 150
-55 to 150
-55
to 150
°C
Parameter
Sy
mbol
1N1183A
(R)
1N118
4A
(R)
1N1188A
(R)
1N1190A
(R)
Unit
Diode forward voltage
1.1
1.1
1.1
1.1
10
10
10
10
μA
15
15
15
15
mA
Thermal characteristics
Thermal resis
tance, ju
nction -
case
R
thJC
1.25
1.25
1.25
1.25
°C/W
2. Reverse pola
rity (R): Stud is a
node.
Conditions
10
1N1186A
(R)
1.25
V
R
= 50 V, T
j
= 140 °C
1.1
1N1183
A
thru 1N1190A
R
V
R
= 50 V, T
j
= 25 °C
I
F
= 40 A, T
j
= 25 °C
T
C
≤ 150 °C
Conditions
200
140
1N1186A
(R)
800
800
-55 to 150
Maximum ratings, at T
j
= 25 °C, unless otherw
ise specified
40
Silicon Standard
Recov
ery Diode
200
A
800
Reverse current
I
R
V
F
800
800
-55 to 150
T
C
= 25 °C, t
p
= 8.3 m
s
Surge non-repe
titive forward
current, Half
Sine W
ave
I
F,SM
Electrical characteristics,
at Tj = 25 °C, unless otherwise specified
V
15
C
A
A
C
Stud
Stud
(R)
C
A
A
C
S
t
u
d
S
t
u
d
(
R
)
DO
-
5 (D
O
-
203AB)
J
K
G
F
A
E
D
P
N
B
C
M
In
c
h
e
s
M
i
ll
i
m
e
te
r
s
M
i
n
M
a
x
M
i
n
M
a
x
A
1
/
4
–
2
8
UNF
B
0
.
6
6
9
0
.
6
8
7
1
7
.
1
9
1
7
.
4
4
C
-----
0
.
7
9
4
-----
2
0
.
1
6
D
-----
1
.
0
2
0
-----
2
5
.
9
1
E
0
.
4
2
2
0
.
4
5
3
1
0
.
7
2
1
1
.
5
0
F
0
.
1
1
5
0
.
2
0
0
2
.
9
3
5
.
0
8
G
-----
0
.
4
6
0
-----
1
1
.
6
8
J
-----
0.
2
8
0
-----
7
.
0
0
K
0.
2
3
6
-----
6
.
0
0
-----
M
-----
0.
5
8
9
-----
1
4
.
9
6
N
--
---
0
.
0
6
3
-----
1
.
6
0
P
0
.
1
4
0
0
.
1
7
5
3
.
5
6
4
.
4
5
1
Oct. 2018
http://www
.
diodemodule.com/silic
on_products/studs/1n1184a.pdf
1N1183
A
thru 1N1190A
R
C
A
A
C
S
t
u
d
S
t
u
d
(
R
)
C
A
A
C
S
t
u
d
S
t
u
d
(
R
)
DO
-
5 (D
O
-
203AB)
J
K
G
F
A
E
D
P
N
B
C
M
In
c
h
e
s
M
i
ll
i
m
e
te
r
s
M
i
n
M
a
x
M
i
n
M
a
x
A
1
/
4
–
2
8
UNF
B
0
.
6
6
9
0
.
6
8
7
1
7
.
1
9
1
7
.
4
4
C
-----
0
.
7
9
4
-----
2
0
.
1
6
D
-----
1
.
0
2
0
-----
2
5
.
9
1
E
0
.
4
2
2
0
.
4
5
3
1
0
.
7
2
1
1
.
5
0
F
0
.
1
1
5
0
.
2
0
0
2
.
9
3
5
.
0
8
G
-----
0
.
4
6
0
-----
1
1
.
6
8
J
-----
0.
2
8
0
-----
7
.
0
0
K
0.
2
3
6
-----
6
.
0
0
-----
M
-----
0.
5
8
9
-----
1
4
.
9
6
N
--
---
0
.
0
6
3
-----
1
.
6
0
P
0
.
1
4
0
0
.
1
7
5
3
.
5
6
4
.
4
5
2
Oct. 2018
http://www
.
diodemodule.com/silic
on_products/studs/1n1184a.pdf
Package dime
nsions and terminal
configuration
Product is
marked with part
number and
terminal
configura
tion.
1N1183
A
thru 1N1190A
R
C
A
A
C
S
t
u
d
S
t
u
d
(
R
)
C
A
A
C
Stud
Stud
(R)
DO
- 5 (DO-203AB)
J
K
G
F
A
E
D
P
N
B
C
M
Inches
Millimeters
Min
Max
Min
Max
A
1/4
–
28
UNF
B
0.669
0.687
17.19
17.44
C
-----
0.794
-----
20.16
D
-----
1.020
-----
25.91
E
0.422
0.453
10.72
1
1.50
F
0.1
15
0.200
2.93
5.08
G
-----
0.460
-----
1
1.68
J
-----
0.
280
-----
7.00
K
0.
236
-----
6.00
-----
M
-----
0.
589
-----
14.96
N
-----
0.063
-----
1.60
P
0.140
0.175
3.56
4.45
3
Oct. 2018
http://www
.
diodemodule.com/silic
on_products/studs/1n1184a.pdf
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