D W DAWIN Electronics TM DL2M50N5 Apr. 2008 500V DUAL N-Channel MOSFET Description Equivalent Circuit and Package DAWIN'S Dual power MOSFET devices are designed for switching applications of high voltage and current. (You have to connect external fast recovery diode reverse connected across each MOSFET) The mounting base of the module is electrically isolated from semiconductor elements for sim ple heat-sink construction. Equivalent Circuit Features RDS(ON) = 0.12 Max. @ VGS=10V, ID=50A Gate Charge = 105nC(typ.) Improved dv/dt Capability, High Ruggedness Maximum Junction Temperature Range = 150 100% avalanche tested Isolation Type Package D1 S1 G1 G2 D2 S2 Package : 6DM-2 Series Applications High efficient SMPS, Active PFC Please see the package out line information Absolute Maximum Ratings @ Tj=25(Per Leg) Symbol Parameter Conditions Ratings Unit VDSS Drain-Source Voltage - 500 V VGS Gate-Source Voltage - 20 V ID Continuous Drain Current Tc = 25 50 A Tc = 100 30 A IDM (1) Pulsed Drain Current (Note 1) - 200 A EAS Single Pulsed Avalanche Energy (Note 2) - 2800 mJ EAR Repetitive Avalanche Energy (Note 1) - 74 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) - 4.5 V/ns PD Maximum Power Dissipation Tc = 25 560 W Tj Operating Junction Temperature - -40 ~ 150 Tstg Storage Temperature Range - -40 ~ 125 Viso Isolation Voltage AC 1 minute 2500 V Mounting screw Torque :M3 - 4.0 N.m Maximum Lead Temp. for soldering Purposes, 1/8" from case for 9 seconds - 260 TL Copyright@Dawin Electronics Corp. All right reserved 1/8 D W DAWIN Electronics TM DL2M50N5 Apr. 2008 Electrical Characteristics of MOSFET @ TC=25 (unless otherwise specified) Values Symbol Parameter Conditions Min. Units Typ. Max. Off Characteristics BVDSS Drain - Source Breakdown Voltage VGS = 0V , ID = 250uA 500 - - V BVDSS/ Temperature Coeff. of VGS = 0V , ID = 250 - 0.5 - V/ TJ Breakdown Voltage IDSS Drain-Source Leakage Current VDS = 500V , VGS = 0V - - 25 uA IGSS Gate-Source Leakage Current VGE =30V - - 100 nA 3.0 - 5.0 V 0.09 0.12 S On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS , ID = 250uA RDS(ON) Static Drain-Source On-State VGS= 10V, ID= 25A Resistance gfs Forward Transconductance VDS= 40V, ID= 25A - 20 - VGS = 0V, VDS= 25V, f= 1MHz - 6000 - Dynamic Characteristics Ciss Input capacitance Coss Output capacitance - 900 - Crss Reverse transfer capacitance - 100 - td(on) Turn-on delay time VDD = 250V , ID = 50A - 105 - Turn-on rise time RG = 25 - 360 - - 225 - - 230 - - 105 - - 33 - - 45 - tr td(off) tf (Note 4,5) Turn-off delay tim e Turn-off fall time Qg Total Gate Charge VDS = 400V Qgs Gate-Source Charge VGS = 10V Qgd Gate-Drain Charge (Miller Charge) (Note 4, 5) ID = 50A Copyright@Dawin Electronics Corp. All right reserved 2/8 pF ns nC D W DAWIN Electronics TM DL2M50N5 Apr. 2008 Electrical Characteristics of FRD @ TC=25 (unless otherwise specified) Symbol Parameter Conditions Integral Reverse p-n Junction Diode in the MOSFET Values Min. Typ. Max. - - 50 - - 200 Unit IS Continuous Source Current ISM Pulsed Source Current VSD Diode Forward Voltage IS= 50A, VGS= 0V - - 1.4 V trr Reverse Recovery Tim e - 580 - ns Qrr IS= 50A, VGS= 0V, diF/dt= 100A/us Reverse Recovery Charge - 10 - uC A Thermal Characteristics and Weight Values Symbol Parameter Conditions RJC Thermal Resistance, Junction-to-Case RCS Thermal Resistance, Case-to-Sink Weight Weight of Module NOTES 1. Repetitive rating : pulse width limited by junction temperature 2. L= 1.46mH, IAS= 50A, VDD= 50V, RG= 25, starting TJ= 25 3. ISD 50A, di/dt 200A/us, VDDBVDSS, starting TJ= 25 4. Pulse Test : Pulse width 300/us, Duty Cycle 2% 5. Essentially independent of operating temperature Copyright@Dawin Electronics Corp. All right reserved 3/8 Unit Min. Typ. Max. - - 0.22 /W 0.1 - - /W - - 30 g D W DAWIN Electronics TM DL2M50N5 Apr. 2008 Performance Curves V GS 15.0V 10.0V 8.0V 7.0V 6.5V 6.0V Bottom: 5.5V 102 TOP: ID , Drain Current [A] ID , Drain Current [A] 102 101 * Notes: 150 101 25 -55 10 0 Notes: 1.250us Pulse Test 1. VDS = 50V 2.Tc=25 100 -1 10 10-1 100 101 VDS, Drain-Source Voltage [V] 2. 250uS Pulse Test 2 Fig 1. On - Region Characteristics Fig 2. Transfer Characteristics IDR , Reverse Drain Current [A] Drain Source On-Resistance 101 0.3 V GS =10V 0.2 V GS =20V 0.1 * Note: TJ =25 30 60 80 120 150 180 100 150 25 10-1 * Notes: 1.VGS=0V 2.250us Pulse Test 0.2 ID , Drain Current [A] 12000 10 VGS , Gate-Source Voltage [v] 6000 Ciss 4000 2000 0 10-1 Crss 100 0.8 1.0 1.2 1.4 1.6 1.8 12 * Notes: 1.VGS = 0V 2. f = 1Mhz 8000 0.6 Fig 4. Body Diode Forward Voltage Variation vs. Source Current and Temp. Ciss = Cgs + Cgd (Cds=shorted) Coss=Cds + Cgd Crss = Cgd 10000 0.4 VSD, Source-Drain Voltage [V] Fig 3. On - Resistance Variation vs. Drain Current and Gate Voltage Capacitance [pF] RDS(ON) [], 0.4 0 10 4 6 8 VGS, Gate-Source Voltage [V] Coss 101 VDS, Drain-Source Voltage [V] V DS = 100V V DS = 250V V DS = 400V 8 6 4 2 0 * Notes : ID=50A 0 30 60 90 120 150 QG, Total Gate Charge [nC] Fig 5. Capacitance Characteristics Fig 6. Gate Charge Characteristics Copyright@Dawin Electronics Corp. All right reserved 4/8 180 D W DAWIN Electronics TM DL2M50N5 Apr. 2008 Performance Curves (Continued) 2.5 RDS(ON) (Normalized) 1.1 1.0 0.9 0.8 -100 * Notes: 1.VGS = 0V 2.ID = 250uA -50 0 50 100 TJ , Junction Temperature [] Drain Source On-Resistance Drain-Source Breakdown Voltage 3.0 150 2.0 1.5 1.0 0.0 -100 -50 0 50 100 150 TJ , Junction Temperature [] 200 Fig 8. On-Resistance Variation 50 103 102 40 10uS 100uS ID , Drain Current [A] 101 * Notes: 1.VGS = 10V 2.ID = 50A 0.5 Fig 7. Breakdown Voltage Variation 1mS Operation This Area is Limited by RD S(ON) 10mS DC 100 * Notes: 1.TC = 25 2.TJ =150 3.Single Pulse 10-1 10-2 100 20 0 25 103 Fig 9. Maximum Safe Operating Area 10-1 30 10 101 102 VDS, Drain-Source Voltage [V] Z JC(t), Thermal Response ID , Drain Current [A] BVDSS (Normalized) 1.2 50 75 100 125 TC , Case Temperature [] Fig 10. Maximum Drain Current vs. Case Temperature * Notes: 1. Z JC(t) = 0.17/W Max. 2. Duty Factor, D = t1 /t2 3. TJM - TC = PDM * Z JC(t) D=0.5 0.2 10-2 0.1 0.05 0.02 0.01 PDM t1 Single pulse 10-3 10-5 10-4 10-3 10-2 10-1 100 t1, Square Wave Pulse Duration [sec] Fig 11. Transient Thermal Response Curve Copyright@Dawin Electronics Corp. All right reserved 5/8 101 t2 150 D W DAWIN Electronics TM DL2M50N5 Apr. 2008 Gate Charge Test Circuit & Waveform VGS Same Type as DUT Qg 10V VDS Qgs Qgd DUT 3mA Charge Resistive Switching Test Circuit & Waveforms VDS 90% VDD 10% VGS DUT 10V tr tr td(on) td(on) ton toff Unclamped Inductive Switching Test Circuit & Waveforms BVDSS IAS ID (t) VDD 10V VDS (t) VDS DUT tp Copyright@Dawin Electronics Corp. All right reserved 6/8 Time D W DAWIN Electronics TM DL2M50N5 Apr. 2008 Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT VDS ISD L Driver Same Type as DUT VGS VDD * dv/dt controlled by RG * ISD controlled by pulse period VGS (Driver) 10V ISD (DUT) VDS (DUT) Copyright@Dawin Electronics Corp. All right reserved 7/8 D W DAWIN Electronics TM DL2M50N5 Apr. 2008 Package Out Line Information 6DM-2 Dimensions in mm 660.2 590.2 0.1 1.80.2 10.8 3.5 1.5 340.2 LABEL PLATE Washer 22.250.2 .80.2 1.9 3.570.2 5.7 7.62 MAX 8.15 8.3 3.5 2.5 3.5 56.250.5 3.2 Copyright@Dawin Electronics Corp. All right reserved 8/8