Rev.8.00 Sep 07, 2005 page 1 of 6
2SK3446
Silicon N Channel Power MOS FET
Power Switching REJ03G1100-0800
(Previous: ADE-208-1566F)
Rev.8.00
Sep 07, 2005
Features
• Capable of 2.5 V gate drive
• Low drive current
• Low on-resistance
RDS (on) = 1.5 Ω typ. (at VGS = 4 V)
Outline
RENESAS Package code:
PRSS0003DC-A
(Package name:
TO-92MOD)
1. Source
2. Drain
3. Gate
D
G
S
321
2SK3446
Rev.8.00 Sep 07, 2005 page 2 of 6
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Value Unit
Drain to source voltage VDSS 150 V
Gate to source voltage VGSS ±10 V
Drain current ID 1 A
Drain peak current ID (pulse) Note 1 4 A
Body-drain diode reverse drain current IDR 1 A
Channel dissipation Pch Note 2 0.9 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Ta = 25°C
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V (BR) DSS 150 — — V ID = 10 mA, VGS = 0
Gate to source breakdown voltage V (BR) GSS ±10 — — V IG = ±100 µA, VDS = 0
Gate to source leak current IGSS — — ±10 µA VGS = ±8 V, VDS = 0
Zero gate voltage drain current IDSS — — 1 µA VDS = 150 V, VGS = 0
Gate to source cutoff voltage VGS (off) 0.5 — 1.5 V VDS = 10 V, ID = 1 mA
RDS (on) — 1.5 1.95 Ω I
D = 0.5 A, VGS = 4 V Note 3 Static drain to source on state resistance RDS (on) — 1.9 2.5 Ω I
D = 0.5 A, VGS = 2.5 V Note 3
Forward transfer admittance |yfs| 0.8 1.4 — S ID = 0.5 A, VDS = 10 V Note 3
Input capacitance Ciss — 98 — pF
Output capacitance Coss — 31 — pF
Reverse transfer capacitance Crss — 14 — pF
VDS = 10 V
VGS = 0
f = 1 MHz
Total gate charge Qg — 3.5 — nC
Gate to source charge Qgs — 0.5 — nC
Gate to drain charge Qgd — 1.8 — nC
VDD = 100 V
VGS = 4 V
ID = 1 A
Turn-on delay time td (on) — 8 — ns
Rise time tr — 12 — ns
Turn-off delay time td (off) — 34 — ns
Fall time tf — 19 — ns
VGS = 4 V
ID = 0.5 A
RL = 60 Ω
Body-drain diode forward voltage VDF — 1.0 1.5 V IF = 1 A, VGS = 0
Body-drain diode reverse recovery time trr — 60 — ns IF = 1 A, VGS = 0
diF/dt = 100 A/µs
Note: 3. Pulse test
2SK3446
Rev.8.00 Sep 07, 2005 page 3 of 6
Main Characteristics
1.6
0
0
0.4
0.8
1.2
50 100 150 200
3
1
0.3
0.1
0.03
0.01
0.1 0.3 1 3 10 30 100 500
2.5
0
0
0.5
1.0
1.5
2.0
2468
10
5
0
0
1
2
3
4
246810
0.003
0.001
10
Ta = 25°C
V
GS
= 1.5 V
2 V
Tc = –25°C
25°C
75°C
2.5 V
Channel Dissipation Pch (W)
Ambient Temperature Ta (°C)
Power vs. Temperature Derating
Drain to Source Voltage V
DS
(V)
Drain Current I
D
(A)
Maximum Safe Operation Area
Operation in
this area is
limited by R
DS(on)
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
Typical Transfer Characteristics
V
DS
= 10 V
Pulse Test
Drain to Source Voltage V
DS
(V)
Drain Current I
D
(A)
Typical Output Characteristics
Pulse Test
0
0
1
2
246810 0.1 1 100.3 3
10
2
5
1
0.5
0.2
0.1
3
I
D
= 1 A
0.5 A
0.2 A
Gate to Source Voltage V
GS
(V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Drain to Source Saturation Voltage
V
DS(on)
(V)
Pulse Test
Drain to Source on State Resistance
R
DS(on)
(Ω)
Static Drain to Source on State Resistance
vs. Drain Current
Drain Current I
D
(A)
10 µs
PW = 10 ms (1shot)
DC Operation (Tc = 25°C)
V
GS
= 2.5 V
4 V
Pulse Test
1 ms
100 µs
3 V
4 V
2SK3446
Rev.8.00 Sep 07, 2005 page 4 of 6
5
1
2
3
4
–25 0 25 7550 100 125 150
0
0.01 0.03 0.3 1 3 10
10
3
1
0.3
0.03
0.1
0.01
0.1
25°C
Tc = –25°C
75°C
0.5 A
0.2 A
0.5 A
0.2 A
ID = 1 A
ID = 1 A
Drain Current ID (A)
Forward Transfer Admittance vs.
Drain Current
Forward Transfer Admittance |yfs| (S)
VDS = 10 V
Pulse Test
Case Temperature Tc (°C)
Static Drain to Source on State Resistance
RDS(on) (Ω)
Static Drain to Source on State Resistance
vs. Temperature
Pulse Test
0.1 0.3 1 3 10
1000
100
300
30
3
10
1
0 1020304050
1000
300
30
100
160
120
80
40
0
0
8
246810
0
2
6
4
100
30
1
3
10
0.1 0.3 1 3 10
10
1
3
VGS = 0
f = 1 MHz
Ciss
Coss
Crss
ID = 1 A
V
DS
VGS
VDD = 100 V
50 V
25 V
di / dt = 100 A / µs
VGS = 0, Ta = 25°C
tr
td(on)
td(off)
tf
VGS = 4 V, VDD = 30 V
PW = 5 µs, duty ≤ 1 %
Reverse Drain Current IDR (A)
Reverse Recovery Time trr (ns)
Body-Drain Diode Reverse
Recovery Time
Typical Capacitance vs.
Drain to Source Voltage
Capacitance C (pF)
Drain to Source Voltage VDS (V)
Switching Time t (ns)
Drain Current ID (A)
Switching Characteristics
Gate Charge Qg (nC)
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
Gate to Source Voltage VGS (V)
VDD = 100 V
50 V
25 V
4 V
VGS = 2.5 V
2SK3446
Rev.8.00 Sep 07, 2005 page 5 of 6
Waveform
0
0
1
2
3
12
4
V
GS
= 0, –5 V
1.5
–25 0 25 50 75 100 125 150
0
0.5
1.0
V
DS
= 10 V
Pulse Test
5 V
Source to Drain Voltage VSDF (V)
Reverse Drain Current vs.
Source to Drain Voltage
Reverse Drain Current IDR (A)
Pulse Test
Case Temperature Tc (°C)
Gate to Source Cutoff Voltage
vs. Case Temperature
Gate to Source Cutoff Voltage VGS(off) (V)
0.1 mA
I
D
= 10 mA
10 µ100 µ1 m 10 m 100 m 1 10 100 1000 10000
10
1
0.1
0.01
D = 1
0.5
0.2
0.1
0.05
0.02
0.01
1shot pulse
Pulse Width PW (S)
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance γ s (t)
P
DM
PW
T
D = PW
T
θch – a (t) = γ s (t) • θch – a
θch – a = 139°C/W, Ta = 25°C
tr
td(on)
Vin
90% 90%
10%
10%
Vout
td(off)
90%
10%
tf
Switching Time Test Circuit
Vin Monitor
D.U.T.
Vin
4 V 50 Ω
R
L
Vout
Monitor
1 mA
V
DD
= 30 V
2SK3446
Rev.8.00 Sep 07, 2005 page 6 of 6
Package Dimensions
0.60 Max
0.55 Max
4.8 ± 0.4 3.8 ± 0.4
8.0 ± 0.5
0.7
2.3 Max
10.1 Min
0.5 Max
1.27
2.54
0.65 ± 0.1
0.75 Max
Package Name
PRSS0003DC-A TO-92 Mod / TO-92 ModV
MASS[Typ.]
0.35gSC-51
RENESAS CodeJEITA Package Code
Unit: mm
Ordering Information
Part Name Quantity Shipping Container
2SK3446TZ-E 2500 pcs Hold box, Radial taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
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