DK2712FAK - Dynex Semiconductor - Datasheet.Directory

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DK27..FA

FEATURES

■Low Switching Losses At High Frequency

■Fully Characterised For Operation Up To 20kHz

APPLICATIONS

■High Power Inverters And Choppers

■UPS

■AC Motor Drives

■Induction Heating

■Cycloconverters

VOLTAGE RATINGS

ORDERING INFORMATION

When ordering, select the required part number shown in the

Voltage Ratings selection table, then:-

Add K to type number for 3/4" 16 UNF thread, e.g. DK27 12FAK

Add M to type number for M16 thread, e.g. DK27 12FAM.

Note: Please use the complete part number when ordering

and quote this number in any future correspondance relating

to your order.

KEY PARAMETERS

VDRM 1200V

IT(RMS) 290A

ITSM 5000A

dVdt 200V/µs

dI/dt 500A/µs

tq20µs

DK27..FA

Fast Switching Thyristor

Replaces January 2000 version, DS4269-3.0 DS4269-4.0 July 2001

DK27 12FA K or M

DK27 10FA K or M

Conditions

VRSM = VRRM + 100V

IDRM = IRRM = 25mA

at VRRM or VDRM & Tvj

Type Number Repetitive Peak

Voltages

VDRM VRRM

1200

1000

Outline type code: TO93

See Package Details for further information.

Fig. 1 Package outline

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SURGE RATINGS

Conditions

tp ≥ 10ms half sine; Tcase = 125oC

VR = 0% VRRM - 1/4 sine

Max. Units

Symbol Parameter

ITSM Surge (non-repetitive) on-state current

I2tI

2t for fusing 125.0 x 103A2s

5.0 kA

THERMAL AND MECHANICAL DATA

Conditions Min. Max. Units

Symbol Parameter

- 0.13 oC/WThermal resistance - junction to caseRth(j-c)

Mounting torque 35.0Nm

with mounting compound 0.06-oC/W

Thermal resistance - case to heatsinkRth(c-h)

125 oC

Tvj Virtual junction temperature

Tstg Storage temperature range

Reverse (blocking)

-Mounting torque 30.0 35.0 Nm

-40 150 oC

On-state (conducting) - 125 oC

CURRENT RATINGS

Symbol Parameter Conditions UnitsMax.

IT(AV) Mean on-state current

IT(RMS) RMS value

Half wave resistive load, Tcase = 80oC 185 A

Tcase = 80oC 290 A

MEASUREMENT OF RECOVERED CHARGE - QRA1

0.5x I

RA1

= 1ms

/dt

Measurement of Q

RA1

: Q

RA1

= I

x t

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DK27..FA

DYNAMIC CHARACTERISTICS

VTM

ParameterSymbol Conditions

Maximum on-state voltage At 600A peak, Tcase = 25oC

IRRM/IDRM Peak reverse and off-state current At VRRM/VDRM, Tcase = 125oC

Gate source 20V, 20Ω

tr < 0.5µs, Tj = 125˚C

dV/dt Maximum linear rate of rise of off-state voltage Linear to 60% VDRM Tj = 125oC, Gate open circuit

Min. Max. Units

- 1.85 V

-25mA

- 200 V/µs

Repetitive 50Hz - 500 A/µs

Non-repetitive - 800 A/µs

Rate of rise of on-state current

dI/dt

VT(TO) Threshold voltage At Tvj = 125oC

rTOn-state slope resistance At Tvj = 125oC

1.2-V

- 1.0 mΩ

Delay timetgd 1.5* - µs

Total turn-on time

t(ON)TOT 3* - µs

Tj = 25˚C, IT = 50A,

VD = 300V, IG = 1A,

dI/dt = 30A/µs, dIG/dt = 1A/µs

*Typical value.

IHHolding current Tj = 25oC, ITM = 1A, VD = 12V - 70 mA

Tj = 125˚C, IT = 200A, V R = 50V,

dV/dt = 200V/µs (Linear to 60% VDRM),

dIR/dt = 30A/µs, Gate open circuit

Turn-off timetq20-µs

tq code: A

GATE TRIGGER CHARACTERISTICS AND RATINGS

VDRM = 12V, Tcase = 25oC, RL = 6Ω

ConditionsParameterSymbol

VGT Gate trigger voltage VDRM = 12V, Tcase = 25oC, RL = 6Ω

IGT Gate trigger current

VGD Gate non-trigger voltage At VDRM Tcase = 125oC, RL = 1kΩ

- 3.0 V

- 200 mA

- 0.2 V

Typ. Max. Units

VRGM Peak reverse gate voltage

IFGM Peak forward gate current Anode positive with respect to cathode

PGM Peak gate power

PG(AV) Mean gate power

- 5.0 V

-4A

-16W

- 3.0 W

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CURVES

Fig.2 Maximum (limit) on-state characteristics Fig.3 Gate characteristics

Fig.4 Typical recovered charge (for a device rated VDRM = 800V, tq = 20µs)

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Fig.5 Transient thermal impedance - junction to case

Fig.6 Non-repetitive sub-cycle surge on-state current and I2t rating

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NOTES:

1. VD ≤ 600V.

2. VR ≤ 10V.

3. R.C Snubber, C = 0.22µF, R = 4.7Ω

NOTES:

1. VD ≤ 600V.

2. VR ≤ 10V.

3. R.C Snubber, C = 0.22µF, R = 4.7Ω

Fig.7 Energy per pulse for sinusoidal pulses

Fig.8 Maximum allowable peak on-state current vs pulse width for Tcase = 65˚C

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NOTES:

1. VD ≤ 600V.

2. VR ≤ 10V.

3. R.C Snubber, C = 0.22µF, R = 4.7Ω

NOTES:

1. dI/dt = 25A/µs

2. VD ≤ 600V.

3. VR ≤ 10V.

4. R.C Snubber, C = 0.22µF, R = 4.7Ω

Fig.9 Maximum allowable peak on-state current vs pulse width for Tcase = 90˚C

Fig.10 Energy per pulse for trapezoidal pulses

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NOTES:

1. dI/dt = 25A/µs

2. VD ≤ 600V.

3. VR ≤ 10V.

4. R.C Snubber, C = 0.22µF, R = 4.7Ω

NOTES:

1. dI/dt = 25A/µs

2. VD ≤ 600V.

3. VR ≤ 10V.

4. R.C Snubber, C = 0.22µF, R = 4.7Ω

Fig.11 Maximum allowable peak on-state current vs pulse width for Tcase = 65˚C

Fig.12 Maximum allowable peak on-state current vs pulse width for Tcase = 90˚C

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NOTES:

1. dI/dt = 50A/µs

2. VD ≤ 600V.

3. VR ≤ 10V.

4. R.C Snubber, C = 0.22µF, R = 4.7Ω

NOTES:

1. dI/dt = 50A/µs

2. VD ≤ 600V.

3. VR ≤ 10V.

4. R.C Snubber, C = 0.22µF, R = 4.7Ω

Fig.13 Energy per pulse for trapezoidal pulses

Fig.14 Maximum allowable peak on-state current vs pulse width for Tcase = 65˚C

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NOTES:

1. dI/dt = 50A/µs

2. VD ≤ 600V.

3. VR ≤ 10V.

4. R.C Snubber, C = 0.22µF, R = 4.7Ω

NOTES:

1. dI/dt = 100A/µs

2. VD ≤ 600V.

3. VR ≤ 10V.

4. R.C Snubber, C = 0.22µF, R = 4.7Ω

Fig.15 Maximum allowable peak on-state current vs pulse width for Tcase = 65˚C

Fig.16 Energy per pulse for trapezoidal pulses

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NOTES:

1. dI/dt = 100A/µs

2. VD ≤ 600V.

3. VR ≤ 10V.

4. R.C Snubber, C = 0.22µF, R = 4.7Ω

NOTES:

1. dI/dt = 100A/µs

2. VD ≤ 600V.

3. VR ≤ 10V.

4. R.C Snubber, C = 0.22µF, R = 4.7Ω

Fig.17 Maximum allowable peak on-state current vs pulse width for Tcase = 65˚C

Fig.18 Maximum allowable peak on-state current vs pulse width for Tcase = 90˚C

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PACKAGE DETAILS

For further package information, please contact your nearest Customer Service Centre. All dimensions in mm, unless stated otherwise.

DO NOT SCALE.

160 ± 10

8 min

Ø8.4 ± 0.3

210 ± 10

Ø4

15 max

30 max

Hex. 27AF

M = M12

K = 1/2" 20 UNF K = 20.6 ± 0.6

M = 18.0 ± 0.5

Nominal weight: 120g

Mounting torque: 15Nm ±10%

Gate lead colour: White

Cathode lead colour: Red

Package outine type code: TO94

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DK27..FA

POWER ASSEMBLY CAPABILITY

The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor,

and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability

of our semiconductors.

We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The

Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our

customers.

Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution

(PACs).

DEVICE CLAMPS

Disc devices require the correct clamping force to ensure their safe operation. The PACS range includes a varied selection of pre-loaded

clamps to suit all of our manufactured devices. Types available include cube clamps for single side cooling of ‘T’ 23mm and ‘E’ 30mm

discs, and bar clamps right up to 83kN for our ‘Z’ 100mm thyristors and diodes.

Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies.

Please refer to our application note on device clamping, AN4839

HEATSINKS

The Power Assembly group has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the

performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on

request.

For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer

service office.

CUSTOMER SERVICE CENTRES

Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33

North America Tel: (613) 723-7035. Fax: (613) 723-1518.

UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020

SALES OFFICES

Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33

North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) /

Tel: (949) 733-3005. Fax: (949) 733-2986.

UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020

These offices are supported by Representatives and Distributors in many countries world-wide.

TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM

HEADQUARTERS OPERATIONS

DYNEX SEMICONDUCTOR LTD

Doddington Road, Lincoln.

Lincolnshire. LN6 3LF. United Kingdom.

Tel: 00-44-(0)1522-500500

Fax: 00-44-(0)1522-500550

DYNEX POWER INC.

99 Bank Street, Suite 410,

Ottawa, Ontario, Canada, K1P 6B9

Tel: 613.723.7035

Fax: 613.723.1518

Toll Free: 1.888.33.DYNEX (39639)

This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as

a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves

the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such

methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication

or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury

or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request.

All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.

http://www.dynexsemi.com

e-mail: power_solutions@dynexsemi.com

Datasheet Annotations:

Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:-

Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.

Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.

Advance Information: The product design is complete and final characterisation for volume production is well in hand.

No Annotation: The product parameters are fixed and the product is available to datasheet specification.