Parameter Symbol IRF7822 Units
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±12
Continuous Drain or Source TA = 25°C ID18
Current (VGS ≥ 4.5V) TA = 70°C 13 A
Pulsed Drain CurrentQIDM 150
Power Dissipation TA = 25°CP
D3.1 W
TA = 70°C 3.0
Junction & Storage Temperature Range TJ, TSTG –55 to 150 °C
Continuous Source Current (Body Diode) IS3.8 A
Pulsed Source CurrentQISM 150
Absolute Maximum Ratings
Parameter Max. Units
Maximum Junction-to-AmbientSRθJA 40 °C/W
Maximum Junction-to-Lead RθJL 20 °C/W
Thermal Resistance
IRF7822
07/11/01
IRF7822
RDS(on) 5.0mΩ
QG 44nC
Qsw 12nC
Qoss 27nC
DEVICE CHARACTERISTICSU
Top View
8
1
2
3
45
6
7
D
D
D
DG
S
A
S
S
SO-8
HEXFET® Power MOSFET for DC-DC Converters
•N-Channel Application-Specific MOSFETs
•Ideal for CPU Core DC-DC Converters
•Low Conduction Losses
•Low Switching Losses
Description
This new device employs advanced HEXFET Power
MOSFET technology to achieve an unprecedented
balance of on-resistance and gate charge. The reduced
conduction and switching losses make it ideal for high
efficiency DC-DC converters that power the latest
generation of microprocessors.
The IRF7822 has been optimized f or all parameters that
are critical in synchronous buck converters including
RDS(on), gate charge and Cdv/dt-induced turn-on immunity .
The IRF7822 off ers particulary low RDS(on) and high Cdv/
dt immunity for synchronous FET applications.
The package is designed for vapor phase, infra-red,
convection, or wave soldering techniques. Power
dissipation of greater than 3W is possible in a typical
PCB mount application.
www.irf.com 1
PD - 94279
IRF7822
2www.irf.com
Parameter Min Typ Max Units Conditions
Diode Forward VSD 1.0 V IS = 15AR, VGS = 0V
Voltage*
Reverse Recovery Qrr 120 nC di/dt ~ 700A/µs
VDS = 16V, VGS = 0V, IS = 15A
Reverse Recovery Qrr(s) 108 nC di/dt = 700A/µs
Charge (with Parallel (with 10BQ040)
Schottky)TVDS = 16V, VGS = 0V, IS = 15A
Source-Drain Rating & Characteristics
ChargeT
Notes: QRepetitiv e rating; pulse width limited by max. junction temperature .
RPulse width ≤ 400 µs; duty cycle ≤ 2%.
SWhen mounted on 1 inch square copper board
TTyp = measured - Qoss
UTypical values of RDS(on) measured at VGS = 4.5V, QG, QSW and QOSS
measured at VGS = 5.0V, IF = 15A.
Parameter Min Ty p Max Units Conditions
Drain-to-Source BVDSS 30 –– VV
GS = 0V, ID = 250µA
Breakdown Voltage
Static Drain-Source RDS(on) 5.0 6.5 mΩVGS = 4.5V, ID = 15AR
on Resistance
Gate Threshold Voltage VGS(th) 1.0 V VDS = VGS,ID = 250µA
Drain-Source Leakage IDSS 30 VDS = 24V, VGS = 0
Current* 150 µA VDS = 24V, VGS = 0,
Tj = 100°C
Gate-Source Leakage IGSS ±100 nA VGS = ±12V
Current
Total Gate Chg Cont FET QG44 60 VGS=5.0V, ID=15A, VDS=16V
Total Gate Chg Sync FET QG38 VGS = 5.0V, VDS< 100mV
Pre-Vth QGS1 13 VDS = 16V, ID = 15A
Gate-Source Charge
Post-Vth QGS2 3.0 nC
Gate-Source Charge
Gate to Drain Charge QGD 9.0
Switch Chg(Qgs2 + Qgd) Q
sw 12
Output Charge Qoss 27 VDS = 16V, VGS = 0
Gate Resistance RG1.5 Ω
Turn-on Delay Time td (on) 15 VDD = 16V, ID = 15A
Rise Time tr5.5 ns VGS = 5.0V
Tur n-off Delay Time td (off) 22 Clamped Inductive Load
F all Time tf12
Input Capacitance Ciss –5500 –
Output Capacitance Coss –1000 –pF VDS = 16V, V GS = 0
Reverse Transfer Capacitance Crss –300 –
Electrical Characteristics
Current
IRF7822
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Fig 1. Normalized On-Resistance
Vs. Temperature Fig 2. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 3. On-Resistance Vs. Gate Voltage Fig 4. Typical Capacitance Vs.
Drain-to-Source Voltage
-60 -40 -20 020 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
4.5V
15A
3.0 4.0 5.0 6.0 7.0
VGS, Gate -to -Source Voltage (V)
0.003
0.004
0.005
0.006
0.007
0.008
0.009
0.010
RDS(on), Drain-to -Source On Resistance ( Ω)
ID = 15A
110 100
VDS, Drain-to-Source Voltage (V)
100
1000
10000
100000
C, Capacitance(pF)
Coss
Crss
Ciss
VGS = 0V, f = 1 MHZ
Ciss = C
gs + Cgd, C
ds SHORTED
Crss
= C
gd
Coss
= C
ds + Cgd
010 20 30 40 50
0
1
2
4
5
6
Q , Total Gate Char
g
e
(
nC
)
V , Gate-to-Source Voltage (V)
G
GS
I =
D15A
V = 24V
DS
IRF7822
4www.irf.com
Figure 7. Maximum Effectiv e Transient Thermal Impedance, J unction-to-Ambient
Fig 6. Typical Source-Drain Diode
Forward Voltage
Fig 5. Typical Transfer Characteristics
0.1
1
10
100
0.2 0.5 0.7 1.0 1.2
V ,Source-to-Drain Volta
g
e (V)
I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 150 C
J°
T = 25 C
J°
1.0 2.0 3.0 4.0 5.0
VGS, Gate-to-Source Voltage (V)
1.00
10.00
100.00
ID, Drain-to-Source Current (Α)
TJ = 25°C
TJ = 175°C
VDS = 15V
20µs PULSE WIDTH
0.01
0.1
1
10
100
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1 2
JDM thJA A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
IRF7822
www.irf.com 5
SO-8 Package Details
K x 45°
C
8X
L
8X
θ
H
0 .25 ( .0 1 0) M A M
A
0 .10 (.00 4)
B 8X
0.2 5 (.0 10 ) M C A S B S
- C -
6X
e
- B -
D
E
- A -
8 7 6 5
1 2 3 4
5
6
5
RECOMMENDED FOOTP RINT
0.72 (.028 )
8X
1 .78 (.07 0)
8 X
6.46 ( .255 )
1.27 ( .0 50 )
3X
DIM INCHE S MILL IMETE RS
MIN MAX MIN MA X
A .0532 .0688 1 .35 1 .75
A1 .0040 .0098 0 .10 0 .25
B .014 .018 0 .36 0 .46
C .00 7 5 .00 9 8 0 .1 9 0 . 2 5
D .18 9 .19 6 4 .8 0 4 . 9 8
E .150 .157 3 .81 3 .99
e .0 5 0 B ASIC 1 .27 BA S IC
e 1 .0 2 5 B AS IC 0 .63 5 BA SIC
H .22 8 4 .24 4 0 5 .8 0 6 . 2 0
K .011 .019 0 .28 0 .48
L 0.16 .050 0.41 1.27
θ
0 ° 8 ° 0° 8 °
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982.
2. CONTROLLING DIM ENSION : INCH.
3. DIME NS IONS AR E SHOWN IN MIL L IMETERS ( INCH ES) .
4. O UTL IN E C ONFORMS TO J EDEC OUTL INE M S-0 1 2AA.
DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS
M OL D PROT RUSION S NOT TO EX CEE D 0.2 5 ( .0 06 ) .
DIM EN SIO NS IS THE L ENGT H OF LEAD FOR S OLD ERING T O A SUBS TR ATE..
5
6
A1
e1
θ
SO-8 Part Marking
IRF7822
6www.irf.com
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
N OTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OU TLINE C O N FOR M S TO EIA-481 & EIA -541.
FEED DIRECTION
TERMINAL NUMBER 1
12 .3 ( .4 8 4 )
11 .7 ( .4 6 1 )
8.1 ( .318 )
7.9 ( .312 )
NOTES:
1. CONTROLLING DIMENSION : M ILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. O UTLIN E C ON FO R MS TO EIA-481 & EIA-5 41.
SO-8 Tape and Reel
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.07/01
