DATA SHEET
Preliminary specification 2000 Apr 18
DISCRETE SEMICONDUCTORS
BZA800A-series
Quadruple ESD transient voltage
suppressor
b
ook, halfpage
MBD127
2000 Apr 18 2
Philips Semiconductors Preliminary specification
Quadruple ESD transient voltage
suppressor BZA800A-series
FEATURES
•ESD rating >8 kV, according to IEC1000-4-2
•SOT353 (SC-88A) surface mount package
•Common anode configuration
APPLICATIONS
•Computers and peripherals
•Audio and video equipment
•Communication systems
•Medical equipment.
DESCRIPTION
Monolithic transient voltage suppressor diode in a five lead
SOT353 (SC-88A) package for 4-bit wide ESD transient
suppression.
MARKING
PINNING
TYPE NUMBER MARKING CODE
BZA856A Z1
BZA862A Z2
BZA868A Z3
BZA820A Z4
PIN DESCRIPTION
1 cathode 1
2 common anode
3 cathode 2
4 cathode 3
5 cathode 4
handbook, halfpage 13
5
4
2
Top view MAM212
c2
b2
c1/e2
b1
e1
Fig.1 Simplified outline SOT353 (SC-88A)
1
2
3
4
5
2000 Apr 18 3
Philips Semiconductors Preliminary specification
Quadruple ESD transient voltage suppressor BZA800A-series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Notes
1. DC working current limited by Ptot max.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per diode
IZworking current Ta=25°C−note 1 mA
IFcontinuous forward current Ta=25°C−200 mA
IFSM non-repetitive peak forward current tp= 1 ms; square pulse −3.75 A
Ptot total power dissipation Ta=25°C−335 mW
PZSM non repetitive peak reverse power
dissipation
square pulse; tp= 1 ms; see Fig.3
BZA856A, BZA862A, BZA868A −24 W
BZA820A −17 W
Tstg storage temperature −65 +150 °C
Tj junction temperature −150 °C
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
Tj=25°C unless otherwise specified.
Tj= 25 °C unless otherwise specified
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-a thermal resistance from junction to
ambient
all diodes loaded 370 K/W
SYMBOL PARAMETER CONDITIONS MAX. UNIT
VFforward voltage IF= 200 mA 1.3 V
IRreverse current
BZA856A VR= 3 V 2000 nA
BZA862A VR= 4 V 700 nA
BZA868A VR= 4.3 V 200 nA
BZA820A VR= 15 V 100 nA
TYPE WORKING VOLTAGE
VZ(V)
at IZ=1mA
DIFFERENTIAL
RESISTANCE
rdif (Ω)
at IZ=1mA
TEMP. COEFF.
SZ(mV/K)
at IZ=1mA
DIODE CAP.
Cd(pF)
at f = 1 MHz;
VR=0V
NON-REPETITIVE PEAK
REVERSE CURRENT
IZSM (A) at tp=1ms;
Tamb =25°C
MIN. TYP. MAX. MAX. TYP. MAX. MAX.
BZA856A 5.32 5.6 5.88 400 −0.2 240 3.2
BZA862A 5.89 6.2 6.51 300 1.8 200 2.9
BZA868A 6.46 6.8 7.14 200 3 180 2.6
BZA820A 19 20 21 125 16 50 0.6
2000 Apr 18 4
Philips Semiconductors Preliminary specification
Quadruple ESD transient voltage suppressor BZA800A-series
Fig.2 Maximum non-repetitive peak reverse
current as a function of pulse time.
0.1
1
10
0.01 0.1 1 10
tp (ms)
IZSM
(A) BZA
856
A
BZA862A
BZA
868
A
BZA820A
Fig.3 Maximum non-repetitive peak reverse
power dissipation as a function of pulse
duration (square pulse).
PZSM =V
ZSM ×IZSM.
VZSM is the non-repetitive peak reverse voltage at IZSM.
1
10
100
0.01 0.1 1 10
tp (ms)
PZSM
(W)
BZA856A, BZA862A, BZA868A
BZA820A
Fig.4 Diode capacitance as a function of reverse
voltage; typical values.
Tj=25°C; f = 1 MHz.
0
40
80
120
160
200
0 5 10 15
VR (V)
Cd
(pF)
BZA820A
BZA862A
BZA856A
BZA868A
2000 Apr 18 5
Philips Semiconductors Preliminary specification
Quadruple ESD transient voltage suppressor BZA800A-series
Vertical Scale =10 V/Div
Horizontal Scale = 50 ns/Div
BZA856A
BZA820A
BZA862A
GND-2
GND-1
GND-4
BZA868A
GND-3
GND
Vertical Scale =10 V/Div
Horizontal Scale = 50 ns/Div
Vertical Scale =10 V/Div
Horizontal Scale = 50 ns/Div
GND
Vertical Scale = 100 V/Div
Horizontal Scale = 50 ns/Div
1/4 BZA800A
ESD Tester
RG 223/U
50 ohm C oax 10X
Attenuator
Digitizing
Oscilloscope
CZ
RZ 450 ohm
note 1 50 ohm
GND
Vertical Scale = 100 V/Div
Horizontal Scale = 50 ns/Div
Fig.5 ESD clamping test set-up and waveforms.
unclamped +1 kV ESD voltage waveform
(IEC 1000-4-2 network)
clamped +1 kV ESD voltage waveform
(IEC 1000-4-2 network)
unclamped −1 kV ESD voltage waveform
(IEC 1000-4-2 network)
clamped −1 kV ESD voltage waveform
(IEC 1000-4-2 network)
IEC 1000-4-2 network
CZ= 150 pF; RZ=330Ω
Note 1: attenuator is only used for open
socket high voltage measurements
2000 Apr 18 6
Philips Semiconductors Preliminary specification
Quadruple ESD transient voltage suppressor BZA800A-series
APPLICATION INFORMATION
Typical common anode application
A quadruple transient suppressor in a SOT353 package makes it possible to protect four separate lines using only one
package. Two simplified examples are shown in Figs 6 and 7.
I/O
A
B
C
D
FUNCTIONAL
DECODER
GND
BZA800A
KEYBOARD
TERMINAL
PRINTER
ETC.
Fig.6 Computer interface protection.
Fig.7 Microprocessor protection.
2000 Apr 18 7
Philips Semiconductors Preliminary specification
Quadruple ESD transient voltage suppressor BZA800A-series
Device placement and printed-circuit board layout
Circuit board layout is of extreme importance in the
suppression of transients. The clamping voltage of the
BZA800A is determined by the peak transient current and
the rate of rise of that current (di/dt). Since parasitic
inductances can further add to the clamping voltage
(V = L di/dt) the series conductor lengths on the
printed-circuit board should be kept to a minimum. This
includes the lead length of the suppression element.
In addition to minimizing conductor length the following
printed-circuit board layout guidelines are recommended:
1. Place the suppression element close to the input
terminals or connectors.
2. Keep parallel signal paths to a minimum.
3. Avoid running protection conductors in parallel with
unprotected conductors.
4. Minimize all printed-circuit board loop areas including
power and ground loops.
5. Minimize the length of the transient return path to
ground.
6. Avoid using shared transient return paths to a common
ground point.
2000 Apr 18 8
Philips Semiconductors Preliminary specification
Quadruple ESD transient voltage suppressor BZA800A-series
PACKAGE OUTLINE
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
SOT353
wBM
bp
D
e1
e
A
A1
Lp
Q
detail X
HE
E
vMA
AB
y
01 2 mm
scale
c
X
132
45
Plastic surface mounted package; 5 leads SOT353
UNIT A1
max bpcD
E (2) e1HELpQywv
mm 0.1 0.30
0.20 2.2
1.8
0.25
0.10
1.35
1.15 0.65
e
1.3 2.2
2.0 0.2 0.10.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
0.25
0.15
A
1.1
0.8
97-02-28SC-88A
2000 Apr 18 9
Philips Semiconductors Preliminary specification
Quadruple ESD transient voltage suppressor BZA800A-series
DATA SHEET STATUS
Note
1. Please consult the most recently issued data sheet before initiating or completing a design.
DATA SHEET STATUS PRODUCT
STATUS DEFINITIONS (1)
Objective specification Development This data sheet contains the design target or goal specifications for
product development. Specification may change in any manner without
notice.
Preliminary specification Qualification This data sheet contains preliminary data, and supplementary data will be
published at a later date. Philips Semiconductors reserves the right to
make changes at any time without notice in order to improve design and
supply the best possible product.
Product specification Production This data sheet contains final specifications. Philips Semiconductors
reserves the right to make changes at any time without notice in order to
improve design and supply the best possible product.
DEFINITIONS
Short-form specification The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Application information Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
DISCLAIMERS
Life support applications These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or title
under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
© Philips Electronics N.V. SCA
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Internet: http://www.semiconductors.philips.com
2000 69
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Printed in The Netherlands 115002/00/03/pp10 Date of release: 2000 Apr 18 Document order number: 9397 750 07042
