TECHNICAL DATA SHEET Gort Road Business Park, Ennis, Co. Clare, Ireland. Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298 6 Lake Street, Lawrence, MA 01841 Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803 Website: http://www.microsemi.com - High Reliability controlled devices - Unidirectional (A) construction - Available in both J-bend and Gull-wing terminations - Selections for 6.5 to 170 V standoff voltages (VWM) SURFACE MOUNT 1500 Watt Low Capacitance Transient Voltage Suppressor DEVICES MSMCJLCE6.5A thru MSMCJLCE170A, e3 and MSMCGLCE6.5A thru MSMCGLCE170A, e3 LEVELS M, MA, MX, MXL FEATURES High reliability controlled devices with fabrication and assembly lot traceability 100% surge tested devices Low capacitance of 100 pF or less Optional upscreening available by replacing the M prefix with MA, MX or MXL. These prefixes specify various screening and conformance inspection options based on MIL-PRF-19500. Refer to MicroNote 129 for more details on the screening options. Axial-lead equivalent packages for thru-hole mounting available as MLCE6.5A to MLCE170CA Moisture classification is Level 1 with no dry pack required per IPC/JEDEC J-STD-020B RoHS compliant devices available by adding an "e3" suffix 3 lot norm screening performed on Standby Current ID APPLICATIONS / BENEFITS 1500 Watts of Peak Pulse Power at 10/1000 s Low capacitance for data line protection to 1 MHz Protection for aircraft fast data rate lines up to Level 5 Waveform 4 and Level 2 Waveform 5A in RTCA/DO-160D (also see MicroNote 130) & ARINC 429 with bit rates of 100 kb/s (per ARINC 429, Part 1, par 2.4.1.1) IEC 61000-4-2 ESD 15 kV (air), 8 kV (contact) IEC 61000-4-5 (lightning) as further detailed in MLCE6.5 thru MLCE170A data sheet T1/E1 Line Cards Base Stations, WAN & XDSL Interfaces CSU/DSU Equipment MAXIMUM RATINGS Peak Pulse Power dissipation at 25 C: 1500 watts at 10/1000 s (also see Figures 1,2, and 3) with impulse repetition rate (duty factor) of 0.01 % or less Clamping Factor: 1.40 @ Full Rated power: 1.30 @ 50 % Rated power -9 tclamping (0 V to VBR min): Less than 5x10 seconds Operating and Storage temperatures: -65 C to +150 C Steady State power dissipation: 5.0W @ TL = 50 C Thermal Resistance: 20 C /W (typical junction to lead (tab) at mounting plane When pulse testing, do not pulse in opposite direction. (See "Schematic Applications" section herein and Figures 5 & 6 for further protection in both directions) Solder temperatures: 260 C for 10 s (maximum) RF01002 Rev A, June 2010 High Reliability Product Group Page 1 of 4 TECHNICAL DATA SHEET Gort Road Business Park, Ennis, Co. Clare, Ireland. Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298 6 Lake Street, Lawrence, MA 01841 Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803 Website: http://www.microsemi.com ________________________________________________________________________________________________________________________________ MECHANICAL AND PACKAGING Void-free transfer molded thermosetting epoxy body meeting UL94V-0 Gull-wing or J-bend tin-lead (90 % Sn, 10 % Pb) or RoHS (100 % Sn) compliant annealed matte-tin plating solderable per MIL-STD-750, method 2026 Cathode indicated by band. No cathode band on bi-directional devices. Part number marked on package Available in bulk or custom tape-and-reel packaging TAPE-AND-REEL option available with up to 750 per 7 inch reel or up to 2500 per 13 inch reel EIA-481-B with 16 mm tape. Add "TR" suffix to part number. Weight: 0.25 gram (approximately) PACKAGE DIMENSIONS (SMCJ) (DO-214AB) (SMCG) (DO-215AB) MIN MAX A .115 .121 MIN MAX 2.92 3.07 DIMENSIONS IN INCHES B C D E F .260 .220 .305 .077 .380 .280 .245 .320 .104 .400 DIMENSIONS IN MILLIMETERS 6.60 5.59 7.75 1.95 9.65 7.11 6.22 8.13 2.65 10.16 K .025 .040 L .030 .060 0.635 1.016 .760 1.520 Typical Standoff Height: 0.004" - 0.008" (0.1mm - 0.2mm) PAD LAYOUT SMCG (DO-215AB) SMCJ (DO-214AB) A B C INCHES 0.390 0.110 0.150 mm 9.90 2.79 3.81 A B C INCHES 0.510 0.110 0.150 mm 12.95 2.79 3.81 SYMBOLS & DEFINITIONS Symbol VWM PPP VBR ID Definition Symbol Working Peak (Standoff) Voltage Peak Pulse Power Breakdown Voltage Standby Current RF01002 Rev A, June 2010 IPP VC IBR Definition Peak Pulse Current Clamping Voltage Breakdown Current for VBR High Reliability Product Group Page 2 of 4 TECHNICAL DATA SHEET Gort Road Business Park, Ennis, Co. Clare, Ireland. Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298 6 Lake Street, Lawrence, MA 01841 Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803 Website: http://www.microsemi.com ________________________________________________________________________________________________________________________________ ELECTRICAL CHARACTERISTICS @ 25oC MICROSEMI PART NUMBER GULL-WING MSMCGLCE6.5A MSMCGLCE7.0A MSMCGLCE7.5A MSMCGLCE8.0A MSMCGLCE8.5A MSMCGLCE9.0A MSMCGLCE10A MSMCGLCE11A MSMCGLCE12A MSMCGLCE13A MSMCGLCE14A MSMCGLCE15A MSMCGLCE16A MSMCGLCE17A MSMCGLCE18A MSMCGLCE20A MSMCGLCE22A MSMCGLCE24A MSMCGLCE26A MSMCGLCE28A MSMCGLCE30A MSMCGLCE33A MSMCGLCE36A MSMCGLCE40A MSMCGLCE43A MSMCGLCE45A MSMCGLCE48A MSMCGLCE51A MSMCGLCE54A MSMCGLCE58A MSMCGLCE60A MSMCGLCE64A MSMCGLCE70A MSMCGLCE75A MSMCGLCE80A MSMCGLCE90A MSMCGLCE100A MSMCGLCE110A MSMCGLCE120A MSMCGLCE130A MSMCGLCE150A MSMCGLCE160A MSMCGLCE170A Reverse Stand-Off Voltage VWM J-BEND MSMCJLCE6.5A MSMCJLCE7.0A MSMCJLCE7.5A MSMCJLCE8.0A MSMCJLCE8.5A MSMCJLCE9.0A MSMCJLCE10A MSMCJLCE11A MSMCJLCE12A MSMCJLCE13A MSMCJLCE14A MSMCJLCE15A MSMCJLCE16A MSMCJLCE17A MSMCJLCE18A MSMCJLCE20A MSMCJLCE22A MSMCJLCE24A MSMCJLCE26A MSMCJLCE28A MSMCJLCE30A MSMCJLCE33A MSMCJLCE36A MSMCJLCE40A MSMCJLCE43A MSMCJLCE45A MSMCJLCE48A MSMCJLCE51A MSMCJLCE54A MSMCJLCE58A MSMCJLCE60A MSMCJLCE64A MSMCJLCE70A MSMCJLCE75A MSMCJLCE80A MSMCJLCE90A MSMCJLCE100A MSMCJLCE110A MSMCJLCE120A MSMCJLCE130A MSMCJLCE150A MSMCJLCE160A MSMCJLCE170A V 6.5 7.0 7.5 8.0 8.5 9.0 10 11 12 13 14 15 16 17 18 20 22 24 26 28 30 33 36 40 43 45 48 51 54 58 60 64 70 75 80 90 100 110 120 130 150 160 170 Breakdown Voltage VBR @ IBR VMIN 7.22 7.78 8.33 8.89 9.44 10.0 11.1 12.2 13.3 14.4 15.6 16.7 17.8 18.9 20.0 22.2 24.4 26.7 28.9 31.1 33.3 36.7 40.0 44.4 47.8 50.0 53.3 56.7 60.0 64.4 66.7 71.1 77.8 83.3 88.7 100 111 122 133 144 167 178 189 VMAX 7.98 8.60 10.2 9.83 10.4 11.1 12.3 13.5 14.7 15.9 17.2 18.5 19.7 20.9 22.1 24.5 26.9 29.5 31.9 34.4 36.8 40.6 44.2 49.1 52.8 55.3 58.9 62.7 66.3 71.2 73.7 78.6 85.0 92.1 98.0 111 123 135 147 159 185 197 231 mA 10 10 10 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 Maximum Reverse Leakage ID @ VWM Maximum Clamping Voltage VC @ IPP Maximum Peak Pulse Current IPP @10/1000 A 1000 500 250 100 50 10 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 V 11.2 12.0 14.3 13.6 14.4 15.4 17.0 18.2 19.9 21.5 23.2 24.4 26.0 27.6 29.2 32.4 35.5 38.9 42.1 45.5 48.4 53.3 58.1 64.5 69.4 72.7 77.4 82.4 87.1 93.6 96.8 103 113 121 129 146 162 178 193 209 243 259 304 A 100 100 100 100 100 97 88 82 75 70 65 61 57 54 51 46 42 39 36 33 31 28.1 25.8 23.3 21.6 20.6 19.4 18.2 17.2 16.0 15.5 14.6 13.3 12.4 11.6 10.3 9.3 8.4 7.8 7.2 6.2 5.8 4.9 Maximum Capacitance @ 0 Volts, f = 1 MHz pF 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 90 90 90 90 90 90 90 90 90 90 90 90 90 Working Inverse Blocking Voltage VWIB V 75 75 75 75 75 75 75 75 75 75 75 75 75 75 75 75 75 75 75 75 75 75 75 75 150 150 150 150 150 150 150 150 150 150 150 300 300 300 300 300 300 300 300 Inverse Blocking Leakage Current IIB A 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 Peak Inverse Blocking Voltage VPIB V 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 200 200 200 200 200 200 200 200 200 200 200 200 200 400 400 400 400 400 400 NOTE 1: TVS are normally selected according to the reverse "Stand Off Voltage" (VWM) which should be equal to or greater than the dc or continuous peak operating voltage level. RF01002 Rev A, June 2010 High Reliability Product Group Page 3 of 4 TECHNICAL DATA SHEET Gort Road Business Park, Ennis, Co. Clare, Ireland. Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298 6 Lake Street, Lawrence, MA 01841 Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803 Website: http://www.microsemi.com ________________________________________________________________________________________________________________________________ tp - Pulse Time - sec Test wave form parameters Peak Pulse Power (PPP) or Current (IPP) in percent of 25oC rating PPP - Peak Pulse Power - kW GRAPHS T - Temperature - C tr = 10 s, tp = 1000 s FIGURE 1 Peak Pulse Power vs. Pulse Time FIGURE 2 Pulse Waveform FIGURE 3 Derating curve SCHEMATIC APPLICATIONS The TVS low capacitance device configuration is shown in Figure 4. As a further option for unidirectional applications, an additional low capacitance rectifier diode may be used in parallel in the same polarity direction as the TVS as shown in Figure 5. In applications where random high voltage transients occur, this will prevent reverse transients from damaging the internal low capacitance rectifier diode and also provide a low voltage conducting direction. The added rectifier diode should be of similar low capacitance and also have a higher reverse voltage rating than the TVS clamping voltage V C. The Microsemi recommended rectifier part number for the application in Figure 5 is the "SMBJLCR80" or "SMBGLCR80" depending on the terminal configuration desired. If using two (2) low capacitance TVS devices in anti-parallel for bidirectional applications, this added protective feature for both directions (including the reverse of each rectifier diode) is inherently provided in Figure 6. The unidirectional and bidirectional configurations in Figure 5 and 6 will both result in twice the capacitance of Figure 4. FIGURE 4 TVS with internal low capacitance rectifier diode RF01002 Rev A, June 2010 FIGURE 5 Optional Unidirectional configuration (TVS and separate rectifier diode in parallel) High Reliability Product Group FIGURE 6 Optional Bidirectional configuration (two TVS devices in anti-parallel) Page 4 of 4