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®
Z04 Series
STANDARD 4A TRIACS
July 2003 - Ed: 5
MAIN FEATU RE S :
DESCRIPTION
The Z04 series is sui table for general purpose AC
switching applications. They can be found in
applications such as touch light dimmers, fan
controllers, HID lamp ignitors,...
Different gate current sensitivities are available,
allowing optimized performances when controlled
directly from microcontrollers.
Symbol Value Unit
IT(RMS) 4A
V
DRM/VRRM 600 to 800 V
IGT ( Q1)3 to 25 mA
ABSOLUTE MAXIM UM RAT INGS
Symbol Parameter Value Unit
IT(RMS) RMS on-state current (full sine wave) TI = 30°C 4 A
Tamb = 25°C 1
ITSM Non repetitive surge peak on-state
current (full cycle, Tj initial = 25°C) F = 50 Hz t = 20 ms 20 A
F = 60 Hz t = 16.7 ms 21
I²tI
²
t Value for fusing tp = 10 ms 2.2 A²s
dI/dt Critical rate of rise of on-state current
IG = 2 x IGT , tr ≤ 100 ns F = 120 Hz Tj = 125°C 20 A/µs
IGM Peak gate current tp = 20 µs Tj = 125°C 1.2 A
PG(AV) Average gate power dissipation Tj = 125°C 0.2 W
Tstg
TjStorage junction temperature range
Operatin g junction temp erature range - 40 to + 150
- 40 to + 125 °C
G
A2
A1
A2
A1 G
TO202-3
(Z04xxF)
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ELECTRICAL CHARACTE RISTICS (Tj = 25°C, unless othe rwise specified )
STAT IC CHARACTERIST ICS
Note 1: minimum IGT is guaranted at 5% of IGT max.
Note 2: for both polarities of A2 referenced to A1
THERMA L RESISTANCES
Symbol Test Conditions Quadrant Z04xx Unit
02 05 09 10
IGT (1) VD = 12 V RL = 30 ΩALL MAX. 3 5 10 25 mA
VGT ALL MAX. 1.3 V
VGD VD = VDRM RL = 3.3 kΩ Tj = 125°C ALL MIN. 0.2 V
IH (2) IT = 50 mA MAX. 3 5 10 25 mA
ILIG = 1.2 IGT I - III - IV MAX. 6 10 15 25 mA
II 12 15 25 50
dV/dt (2) VD = 67 %VDRM gate open Tj = 110°C MIN. 10 20 100 200 V/µs
(dV/dt)c (2) (dI/dt)c = 1.8 A/ms Tj = 110°C MIN. 0.5 1 2 5 V/µs
Symbol Test Conditions Value Unit
VTM (2) ITM = 5.5 A tp = 380 µs Tj = 25°C MAX. 2.0 V
Vto (2) Threshold voltage Tj = 125°C MAX. 0.95 V
Rd (2) Dynamic resistance Tj = 125°C MAX. 180 mΩ
IDRM
IRRM
VDRM = VRRM Tj = 25°C MAX. 5µA
Tj = 125°C 0.5 mA
Symbol Parameter Value Unit
Rth(j-l) Junction to lead (AC) 15 °C/W
Rth(j-a) Junction to ambient 100 °C/W
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PRODUCT SELECTOR
ORDERING INFO RMATION
OTHER INFORMATION
Note: xx = sensitivity, y = voltage
Part Number Voltage Sensitivity Type Package
600 V 700 V 800 V
Z0402MF X 3 mA Standard TO202-3
Z0402SF X 3 mA Standard TO202-3
Z0402NF X 3 mA Standard TO202-3
Z0405MF X 5 mA Standard TO202-3
Z0405SF X 5 mA Standard TO202-3
Z0405NF X 5 mA Standard TO202-3
Z0409MF X 10 mA Sta ndar d TO202-3
Z0409SF X 10 mA Sta ndar d TO202-3
Z0409NF X 10 mA Standard TO202-3
Z0410MF X 25 mA Sta ndar d TO202-3
Z0410SF X 25 mA Sta ndar d TO202-3
Z0410NF X 25 mA Standard TO202-3
Part Number Marking Weight Base
quantity Packing
mode
Z04xxyF 0AA2 Z04xxyF 0.8 g 50 Tube
Z04xxyF 1AA2 Z04xxyF 0.8 g 250 Bulk
Z 04 02 M F 0AA2
TRIAC
SERIES
CURRENT: 4A
SENSITIVITY:
02: 3mA
05: 5mA
09: 10mA
10: 25mA
VOLTAGE:
M: 600V
S: 700V
N: 800V
PACKAGE:
F:TO202-3
PACKING MODE:
0AA2:Tube
1AA2: Bulk
Blank
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Fig. 1: Maximum power dissipation versus RMS
on-state current (fu ll cycle). Fig. 2: RMS on-state current versus ambient
temperatu re (full cycl e).
Fig. 3: Relative variation of thermal impedance
junction to ambient versus pulse duration. Fig. 4: Relative variation of gate trigger current,
holding current and latching current versus
junction temperature (typical val ues).
Fig. 5: Surge peak on-state current versus
num ber of cycle s. Fig. 6: Non-repetitive surge peak on-state
current for a sinusoidal pulse with width
tp < 10ms, and correspondi ng value of I²t.
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
0
1
2
3
4
5
6
7
IT(RMS)(A)
P(W)
0 25 50 75 100 125
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5 IT(RMS)(A)
Rth(j-a)=Rth(j-l)
Rth(j-a)=100°C/W
Tamb(°C)
1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2
1E-3
1E-2
1E-1
1E+0
tp(s)
K=[Zth(j-a)/Rth(j-a)]
-40 -20 0 20 40 60 80 100 120 140
0.0
0.5
1.0
1.5
2.0
2.5
Tj(°C)
IGT,IH,IL [Tj] / IGT,IH,IL [Tj=25°C]
IGT
IH & IL
1 10 100 1000
0
5
10
15
20
25
Number of cycles
ITSM(A)
Non repetitive
Tj initial=25°C
Repetitive
Tamb=25°C
One cycle
t=20ms
0.01 0.10 1.00 10.00
1
10
100
500
tp (ms)
ITSM (A), I²t (A²s)
Tj initial=25°C
ITSM
I²t
dI/dt limitation:
20A/µs
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Fig. 7: On-state characteristics (maximum
values). Fig. 8: Relative variation of critical rate of
dec re ase of main current versus (dV/dt)c (typical
values).
Fig. 9: Relative variation of critical rate of
decrease of main current versus junction
temperature.
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
0.1
1.0
10.0
20.0
VTM(V)
ITM(A)
Tj=25°C
Tj max.
Vto= 0.95V
Rd= 180 mW
Tj=Tj max.
0.1 1.0 10.0 100.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
(dV/dt)c (V/µs)
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
Z0402
Z0405
Z0409
Z0410
0 25 50 75 100 125
0
1
2
3
4
5
6(dI/dt)c [Tj] / (dI/dt)c [Tj specified]
Tj (°C)
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PACKAGE MECHANICAL DATA
TO 202-3 (Plastic)
REF.
DIMENSIONS
Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
A 10.1 0.398
C 7.3 0.287
D 10.5 0.413
F 1.5 0.059
H 0.51 0.020
J 1.5 0.059
M 4.5 0.177
N 5.3 0.209
N1 2.54 0.100
O 1.4 0.055
P 0.7 0.028
A
O
P
N
N1
F
C
DJ
H
M
