1
Features
Serial Peripheral Interface (SPI) Compatible
Supports SPI Modes 0 (0,0) and 3 (1,1)
Low-voltage and Standard-voltage Operation
2.7 (VCC = 2.7V to 5.5V)
1.8 (VCC = 1.8V to 5.5V)
3.0 MHz Clock Rate (5V)
32-byte Page Mode
Block Write Protection
Protect 1/4, 1/2, or Entire Array
Write Protect (WP) Pin and Write Disable Instructions for
both Hardware and Software Data Protection
Self-timed Write Cycle (5 ms Typical)
High-reliability
Endurance: One Million Write Cycles
Data Retention: 100 Years
Automotive Grade Devices Available
8-lead PDIP, 8-lead JEDEC SOIC and 14-lead TSSOP Packages
Description
The AT25080/160/320/640 provides 8192/16384/32768/65536 bits of serial electri-
cally-erasable programmable read only memory (EEPROM) organized as
1024/2048/4096/8192 words of 8 bits each. The device is optimized for use in many
industrial and commercial applications where low-power and low-voltage operation
are essential. The AT25080/160/320/640 is available in space saving 8-lead PDIP, 8-
lead JEDEC SOIC and 14-lead TSSOP packages.
The AT25080/160/320/640 is enabled through the Chip Select pin (CS) and accessed
via a 3-wire interface consisting of Serial Data Input (SI), Serial Data Output (SO), and
Serial Clock (SCK). All programming cycles are completely self-timed, and no sepa-
rate ERASE cycle is required before WRITE.
SPI Serial
EEPROMs
8K (1024 x 8)
16K (2048 x 8)
32K (4096 x 8)
64K (8192 x 8)
AT25080
AT25160
AT25320
AT25640
0675M–SEEPR–9/03
Pin Configuration
Pin Name Function
CS Chip Select
SCK Serial Data Clock
SI Serial Data Input
SO Serial Data Output
GND Ground
VCC Power Supply
WP Write Protect
HOLD Suspends Serial Input
NC No Connect
DC Don’t Connect
8-lead PDIP
1
2
3
4
8
7
6
5
CS
SO
WP
GND
VCC
HOLD
SCK
SI
8-lead SOIC
1
2
3
4
8
7
6
5
CS
SO
WP
GND
VCC
HOLD
SCK
SI
14-lead TSSOP
1
2
3
4
5
6
7
14
13
12
11
10
9
8
CS
SO
NC
NC
NC
WP
GND
VCC
HOLD
NC
NC
NC
SCK
SI
2AT25080/160/320/640
0675M–SEEPR–9/03
BLOCK WRITE protection is enabled by programming the status register with one of four blocks of write protection. Sepa-
rate program enable and program disable instructions are provided for additional data protection. Hardware data protection
is provided via the WP pin to protect against inadvertent write attempts to the status register. The HOLD pin may be used to
suspend any serial communication without resetting the serial sequence.
Block Diagram
Absolute Maximum Ratings*
Operating Temperature.................................. -55°C to +125°C*NOTICE: Stresses beyond those listed under “Absolute
Maximum Ratings” may cause permanent dam-
age to the device. This is a stress rating only and
functional operation of the device at these or any
other conditions beyond those indicated in the
operational sections of this specification is not
implied. Exposure to absolute maximum rating
conditions for extended periods may affect device
reliability.
Storage Temperature..................................... -65°C to +150°C
Voltage on Any Pin
with Respect to Ground .....................................-1.0V to +7.0V
Maximum Operating Voltage .......................................... 6.25V
DC Output Current........................................................ 5.0 mA
3
AT25080/160/320/640
0675M–SEEPR–9/03
Pin Capacitance(1)
Note: 1. This parameter is characterized and is not 100% tested.
DC Characteristics(1)
Note: 1. VIL min and VIH max are reference only and are not tested.
Applicable over recommended operating range from TA = 25°C, f = 1.0 MHz, VCC = +5.0V (unless otherwise noted).
Symbol Test Conditions Max Units Conditions
COUT Output Capacitance (SO) 8 pF VOUT = 0V
CIN Input Capacitance(CS, SCK, SI, WP, HOLD)6pFV
IN = 0V
Applicable over recommended operating range from: TAI = -40°C to +85°C, VCC = +1.8V to +5.5V, VCC = +1.8V to +5.5V
(unless otherwise noted).
Symbol Parameter Test Condition Min Typ Max Units
VCC1 Supply Voltage 1.8 3.6 V
VCC2 Supply Voltage 2.7 5.5 V
VCC3 Supply Voltage 4.5 5.5 V
ICC1 Supply Current VCC = 5.0V at 1 MHz, SO = Open, Read 3.0 mA
ICC2 Supply Current VCC = 5.0V at 2 MHz, SO = Open,
Read, Write 5.0 mA
ISB1 Standby Current VCC = 1.8V, CS = VCC 0.1 1.0 µA
ISB2 Standby Current VCC = 2.7V, CS = VCC 0.2 2.0 µA
ISB3 Standby Current VCC = 5.0V, CS = VCC 2.0 5.0 µA
IIL Input Leakage VIN = 0V to VCC -3.0 µA
IOL Output Leakage VIN = 0V to VCC, TAC = 0°C to 70°C -3.0 3.0 µA
VIL(1) Input Low-voltage -0.6 VCC x 0.3 V
VIH(1) Input High-voltage VCC x 0.7 VCC + 0.5 V
VOL1 Output Low-voltage 4.5V VCC 5.5V IOL = 3.0 mA 0.4 V
VOH1 Output High-voltage IOH = -1.6 mA VCC - 0.8 V
VOL2 Output Low-voltage 1.8V VCC 3.6V IOL = 0.15 mA 0.2 V
VOH2 Output High-voltage IOH = -100 µA VCC - 0.2 V
4AT25080/160/320/640
0675M–SEEPR–9/03
AC Characteristics
Applicable over recommended operating range from TAI = -40°C to +85°C, VCC = As Specified, CL = 1 TTL Gate and
100 pF (unless otherwise noted).
Symbol Parameter Voltage Min Max Units
fSCK SCK Clock Frequency
4.5 - 5.5
2.7 - 5.5
1.8 - 5.5
0
0
0
3.0
2.1
0.5
MHz
tRI Input Rise Time
4.5 - 5.5
2.7 - 5.5
1.8 - 5.5
2
2
2
µs
tFI Input Fall Time
4.5 - 5.5
2.7 - 5.5
1.8 - 5.5
2
2
2
µs
tWH SCK High Time
4.5 - 5.5
2.7 - 5.5
1.8 - 5.5
133
200
800
ns
tWL SCK Low Time
4.5 - 5.5
2.7 - 5.5
1.8 - 5.5
133
200
800
ns
tCS CS High Time
4.5 - 5.5
2.7 - 5.5
1.8 - 5.5
250
250
1000
ns
tCSS CS Setup Time
4.5 - 5.5
2.7 - 5.5
1.8 - 5.5
250
250
1000
ns
tCSH CS Hold Time
4.5 - 5.5
2.7 - 5.5
1.8 - 5.5
250
250
1000
ns
tSU Data In Setup Time
4.5 - 5.5
2.7 - 5.5
1.8 - 5.5
50
50
100
ns
tHData In Hold Time
4.5 - 5.5
2.7 - 5.5
1.8 - 5.5
50
50
100
ns
tHD Hold Setup Time
4.5 - 5.5
2.7 - 5.5
1.8 - 5.5
100
100
400
tCD Hold Hold Time
4.5 - 5.5
2.7 - 5.5
1.8 - 5.5
200
200
400
ns
tVOutput Valid
4.5 - 5.5
2.7 - 5.5
1.8 - 5.5
0
0
0
133
200
800
ns
tHO Output Hold Time
4.5 - 5.5
2.7 - 5.5
1.8 - 5.5
0
0
0
ns
5
AT25080/160/320/640
0675M–SEEPR–9/03
Note: 1. This parameter is characterized and is not 100% tested.
tLZ Hold to Output Low Z
4.5 - 5.5
2.7 - 5.5
1.8 - 5.5
0
0
0
100
100
100
ns
tHZ Hold to Output High Z
4.5 - 5.5
2.7 - 5.5
1.8 - 5.5
100
100
100
ns
tDIS Output Disable Time
4.5 - 5.5
2.7 - 5.5
1.8 - 5.5
250
250
1000
ns
tWC Write Cycle Time
4.5 - 5.5
2.7 - 5.5
1.8 - 5.5
5
10
20
ms
Endurance(1) 5.0V, 25°C, Page Mode 1M Write Cycles
AC Characteristics (Continued)
Applicable over recommended operating range from TAI = -40°C to +85°C, VCC = As Specified, CL = 1 TTL Gate and
100 pF (unless otherwise noted).
Symbol Parameter Voltage Min Max Units
6AT25080/160/320/640
0675M–SEEPR–9/03
Serial Interface
Description
MASTER: The device that generates the serial clock.
SLAVE: Because the Serial Clock pin (SCK) is always an input, the AT25080/160/320/640
always operates as a slave.
TRANSMITTER/RECEIVER: The AT25080/160/320/640 has separate pins designated for
data transmission (SO) and reception (SI).
MSB: The Most Significant Bit (MSB) is the first bit transmitted and received.
SERIAL OP-CODE: After the device is selected with CS going low, the first byte will be
received. This byte contains the op-code that defines the operations to be performed.
INVALID OP-CODE: If an invalid op-code is received, no data will be shifted into the
AT25080/160/320/640, and the serial output pin (SO) will remain in a high impedance state
until the falling edge of CS is detected again. This will reinitialize the serial communication.
CHIP SELECT: The AT25080/160/320/640 is selected when the CS pin is low. When the
device is not selected, data will not be accepted via the SI pin, and the serial output pin (SO)
will remain in a high impedance state.
HOLD: The HOLD pin is used in conjunction with the CS pin to select the
AT25080/160/320/640. When the device is selected and a serial sequence is underway,
HOLD can be used to pause the serial communication with the master device without resetting
the serial sequence. To pause, the HOLD pin must be brought low while the SCK pin is low.
To resume serial communication, the HOLD pin is brought high while the SCK pin is low (SCK
may still toggle during HOLD). Inputs to the SI pin will be ignored while the SO pin is in the
high impedance state.
WRITE PROTECT: The write protect pin (WP) will allow normal read/write operations when
held high. When the WP pin is brought low and WPEN bit is “1”, all write operations to the sta-
tus register are inhibited. WP going low while CS is still low will interrupt a write to the status
register. If the internal write cycle has already been initiated, WP going low will have no effect
on any write operation to the status register. The WP pin function is blocked when the WPEN
bit in the status register is “0”. This will allow the user to install the AT25080/160/320/640 in a
system with the WP pin tied to ground and still be able to write to the status register. All WP
pin functions are enabled when the WPEN bit is set to “1”.
7
AT25080/160/320/640
0675M–SEEPR–9/03
SPI Serial Interface
8AT25080/160/320/640
0675M–SEEPR–9/03
Functional
Description
The AT25080/160/320/640 is designed to interface directly with the synchronous serial periph-
eral interface (SPI) of the 6805 and 68HC11 series of microcontrollers.
The AT25080/160/320/640 utilizes an 8-bit instruction register. The list of instructions and their
operation codes are contained in Table 1. All instructions, addresses, and data are transferred
with the MSB first and start with a high-to-low CS transition.
WRITE ENABLE (WREN): The device will power-up in the write disable state when VCC is
applied. All programming instructions must therefore be preceded by a Write Enable
instruction.
WRITE DISABLE (WRDI): To protect the device against inadvertent writes, the Write Disable
instruction disables all programming modes. The WRDI instruction is independent of the sta-
tus of the WP pin.
READ STATUS REGISTER (RDSR): The Read Status Register instruction provides access to
the status register. The READY/BUSY and Write Enable status of the device can be deter-
mined by the RDSR instruction. Similarly, the Block Write Protection bits indicate the extent of
protection employed. These bits are set by using the WRSR instruction.
Table 1. Instruction Set for the AT25080/160/320/640
Instruction Name Instruction Format Operation
WREN 0000 X110 Set Write Enable Latch
WRDI 0000 X100 Reset Write Enable Latch
RDSR 0000 X101 Read Status Register
WRSR 0000 X001 Write Status Register
READ 0000 X011 Read Data from Memory Array
WRITE 0000 X010 Write Data to Memory Array
Table 2. Status Register Format
Bit 7 Bit 6 Bit 5 Bit 4 Bit 3 Bit 2 Bit 1 Bit 0
WPEN X X X BP1 BP0 WEN RDY
Table 3. Read Status Register Bit Definition
Bit Definition
Bit 0 (RDY)Bit 0 = 0 (RDY) indicates the device is READY. Bit 0 = 1 indicates the write cycle is
in progress.
Bit 1 (WEN) Bit 1= 0 indicates the device is not WRITE ENABLED. Bit 1 = 1 indicates the
device is WRITE ENABLED.
Bit 2 (BP0) See Table 4 on page 9.
Bit 3 (BP1) See Table 4 on page 9.
Bits 4 - 6 are 0s when device is not in an internal write cycle.
Bit 7 (WPEN) See Table 5 on page 9.
Bits 0 - 7 are 1s during an internal write cycle.
9
AT25080/160/320/640
0675M–SEEPR–9/03
WRITE STATUS REGISTER (WRSR): The WRSR instruction allows the user to select one of
four levels of protection. The AT25080/160/320/640 is divided into four array segments. One
quarter (1/4), one half (1/2), or all of the memory segments can be protected. Any of the data
within any selected segment will therefore be READ only. The block write protection levels and
corresponding status register control bits are shown in Table 4.
The three bits, BP0, BP1, and WPEN are nonvolatile cells that have the same properties and
functions as the regular memory cells (e.g. WREN, tWC, RDSR).
The WRSR instruction also allows the user to enable or disable the write protect (WP) pin
through the use of the Write Protect Enable (WPEN) bit. Hardware write protection is enabled
when the WP pin is low and the WPEN bit is “1”. Hardware write protection is disabled when
either the WP pin is high or the WPEN bit is “0”. When the device is hardware write protected,
writes to the Status Register, including the Block Protect bits and the WPEN bit, and the block-
protected sections in the memory array are disabled. Writes are only allowed to sections of the
memory which are not block-protected.
NOTE: When the WPEN bit is hardware write protected, it cannot be changed back to “0”, as
long as the WP pin is held low.
Table 4. Block Write Protect Bits
Level
Status
Register Bits Array Addresses Protected
BP1 BP0 AT25080 AT25160 AT25320 AT25640
0 0 0 None None None None
1(1/4) 0 1 0300
-03FF
0600
-07FF
0C00
-0FFF
1800
-1FFF
2(1/2) 1 0 0200
-03FF
0400
-07FF
0800
-0FFF
1000
-1FFF
3(All) 1 1 0000
-03FF
0000
-07FF
0000
-0FFF
0000
-1FFF
Table 5. WPEN Operation
WPEN WP WEN
Protected
Blocks
Unprotected
Blocks
Status
Register
0 X 0 Protected Protected Protected
0 X 1 Protected Writable Writable
1 Low 0 Protected Protected Protected
1 Low 1 Protected Writable Protected
X High 0 Protected Protected Protected
X High 1 Protected Writable Writable
10 AT25080/160/320/640
0675M–SEEPR–9/03
READ SEQUENCE (READ): Reading the AT25080/160/320/640 via the SO (Serial Output)
pin requires the following sequence. After the CS line is pulled low to select a device, the
READ op-code is transmitted via the SI line followed by the byte address to be read (A15 - A0,
Refer to Table 6). Upon completion, any data on the SI line will be ignored. The data (D7 - D0)
at the specified address is then shifted out onto the SO line. If only one byte is to be read, the
CS line should be driven high after the data comes out. The READ sequence can be contin-
ued since the byte address is automatically incremented and data will continue to be shifted
out. When the highest address is reached, the address counter will roll over to the lowest
address allowing the entire memory to be read in one continuous READ cycle.
WRITE SEQUENCE (WRITE): In order to program the AT25080/160/320/640, two separate
instructions must be executed. First, the device must be write enabled via the Write Enable
(WREN) Instruction. Then a Write (WRITE) Instruction may be executed. Also, the address of
the memory location(s) to be programmed must be outside the protected address field location
selected by the Block Write Protection Level. During an internal write cycle, all commands will
be ignored except the RDSR instruction.
A Write Instruction requires the following sequence. After the CS line is pulled low to select the
device, the WRITE op-code is transmitted via the SI line followed by the byte address
(A15 - A0) and the data (D7 - D0) to be programmed (Refer to Table 6). Programming will start
after the CS pin is brought high. (The LOW-to-High transition of the CS pin must occur during
the SCK low-time immediately after clocking in the D0 (LSB) data bit.
The READY/BUSY status of the device can be determined by initiating a READ STATUS
REGISTER (RDSR) Instruction. If Bit 0 = 1, the WRITE cycle is still in progress. If Bit 0 = 0, the
WRITE cycle has ended. Only the READ STATUS REGISTER instruction is enabled during
the WRITE programming cycle.
The AT25080/160/320/640 is capable of a 32-byte PAGE WRITE operation. After each byte of
data is received, the five low order address bits are internally incremented by one; the high
order bits of the address will remain constant. If more than 32 bytes of data are transmitted,
the address counter will roll over and the previously written data will be overwritten. The
AT25080/160/320/640 is automatically returned to the write disable state at the completion of
a WRITE cycle.
NOTE: If the device is not Write enabled (WREN), the device will ignore the Write instruction
and will return to the standby state, when CS is brought high. A new CS falling edge is
required to re-initiate the serial communication.
Table 6. Address Key
Address AT25080 AT25160 AT25320 AT25640
ANA9 - A0A10 - A0A11 - A0A12 - A0
Don't Care Bits A15 - A10 A15 - A11 A15 - A12 A15 - A13
11
AT25080/160/320/640
0675M–SEEPR–9/03
Timing Diagrams
Synchronous Data Timing (for Mode 0)
WREN Timing
WRDI Timing
SO
V
OH
V
OL
HI-Z HI-Z
t
V
VALID IN
SI
V
IH
V
IL
t
H
t
SU
t
DIS
SCK
V
IH
V
IL
t
WH
t
CSH
CS
V
IH
V
IL
t
CSS
t
CS
t
WL
t
HO
12 AT25080/160/320/640
0675M–SEEPR–9/03
RDSR Timing
WRSR Timing
READ Timing
CS
SCK
01234567891011121314
SI INSTRUCTION
SO
76543210
DATA OUT
MSB
HIGH IMPEDANCE
15
HIGH IMPEDANCE
INSTRUCTION DATA IN
0
0
1
1
2
2
3
3
4
4
5
5
6
6
7
7
8 9 10 11 12 13 14 15
CS
SCK
SI
SO
CS
SCK
SI
SO
0
0
0
1
1
1
2
2
2
3
3
3
...
4
4
5
5
6
6
7
7
8910
15 14 13
11 20 21 22 23 24 25 26 27 28 29 30
HIGH IMPEDANCE
INSTRUCTION
BYTE ADDRESS
MSB
DATA OUT
31
13
AT25080/160/320/640
0675M–SEEPR–9/03
WRITE Timing
HOLD Timing
0
00
1
11
2
22
3
33
...
4
4
5
5
6
6
7
7
8910
15 14 13
11 20 21 22 23 24 25 26 27 28 29 30 31
HIGH IMPEDANCE
CS
SCK
SI
SO
INSTRUCTION
BYTE ADDRESS DATA IN
SO
SCK
HOLD
tCD
tHD
tHZ
tLZ
tCD
tHD
CS
14 AT25080/160/320/640
0675M–SEEPR–9/03
Note: For 2.7V devices used in the 4.5V to 5.5V range, please refer to performance values in the AC and DC Characteristics tables.
AT25080 Ordering Information
Ordering Code Package Operation Range
AT25080-10PI-2.7
AT25080N-10SI-2.7
AT25080T1-10TI-2.7
8P3
8S1
14A2
Industrial
(-40°C to 85°C)
AT25080-10PI-1.8
AT25080N-10SI-1.8
AT25080T1-10TI-1.8
8P3
8S1
14A2
Industrial
(-40°C to 85°C)
Package Type
8P3 8-lead, 0.300" Wide, Plastic Dual Inline Package (PDIP)
8S1 8-lead, 0.150" Wide, Plastic Gull Wing Small Outline (JEDEC SOIC)
14A2 14-lead, 0.170" Wide, Thin Shrink Small Outline Package (TSSOP)
Options
-2.7 Low Voltage (2.7V to 5.5V)
-1.8 Low Voltage (1.8V to 5.5V)
15
AT25080/160/320/640
0675M–SEEPR–9/03
Note: For 2.7V devices used in the 4.5V to 5.5V range, please refer to performance values in the AC and DC Characteristics tables.
AT25160 Ordering Information
Ordering Code Package Operation Range
AT25160-10PI-2.7
AT25160N-10SI-2.7
AT25160T1-10TI-2.7
8P3
8S1
14A2
Industrial
(-40°C to 85°C)
AT25160-10PI-1.8
AT25160N-10SI-1.8
AT25160T1-10TI-1.8
8P3
8S1
14A2
Industrial
(-40°C to 85°C)
Package Type
8P3 8-lead, 0.300" Wide, Plastic Dual Inline Package (PDIP)
8S1 8-lead, 0.150" Wide, Plastic Gull Wing Small Outline (JEDEC SOIC)
14A2 14-lead, 0.170" Wide, Thin Shrink Small Outline Package (TSSOP)
Options
-2.7 Low Voltage (2.7V to 5.5V)
-1.8 Low Voltage (1.8V to 5.5V)
16 AT25080/160/320/640
0675M–SEEPR–9/03
Note: For 2.7V devices used in the 4.5V to 5.5V range, please refer to performance values in the AC and DC Characteristics tables.
AT25320 Ordering Information
Ordering Code Package Operation Range
AT25320-10PI-2.7
AT25320N-10SI-2.7
AT25320T1-10TI-2.7
8P3
8S1
14A2
Industrial
(-40°C to 85°C)
Package Type
8P3 8-lead, 0.300" Wide, Plastic Dual Inline Package (PDIP)
8S1 8-lead, 0.150" Wide, Plastic Gull Wing Small Outline (JEDEC SOIC)
14A2 14-lead, 0.170" Wide, Thin Shrink Small Outline Package (TSSOP)
Options
-2.7 Low Voltage (2.7V to 5.5V)
17
AT25080/160/320/640
0675M–SEEPR–9/03
Note: For 2.7V devices used in the 4.5V to 5.5V range, please refer to performance values in the AC and DC Characteristics tables.
AT25640 Ordering Information
Ordering Code Package Operation Range
AT25640-10PI-2.7
AT25640N-10SI-2.7
AT25640T1-10TI-2.7
8P3
8S1
14A2
Industrial
(-40°C to 85°C)
AT25640-10PI-1.8
AT25640N-10SI-1.8
AT25640T1-10TI-1.8
8P3
8S1
14A2
Industrial
(-40°C to 85°C)
Package Type
8P3 8-lead, 0.300" Wide, Plastic Dual Inline Package (PDIP)
8S1 8-lead, 0.150" Wide, Plastic Gull Wing Small Outline (JEDEC SOIC)
14A2 14-lead, 0.170" Wide, Thin Shrink Small Outline Package (TSSOP)
Options
-2.7 Low Voltage (2.7V to 5.5V)
-1.8 Low Voltage (1.8V to 5.5V)
18 AT25080/160/320/640
0675M–SEEPR–9/03
Packaging Information
8P3 – PDIP
2325 Orchard Parkway
San Jose, CA 95131
TITLE DRAWING NO.
R
REV.
8P3, 8-lead, 0.300" Wide Body, Plastic Dual
In-line Package (PDIP)
01/09/02
8P3B
D
D1
E
E1
e
L
b2
b
A2 A
1
N
eA
c
b3
4 PLCS
Top View
Side View
End View
COMMON DIMENSIONS
(Unit of Measure = inches)
SYMBOL MIN NOM MAX NOTE
Notes: 1. This drawing is for general information only; refer to JEDEC Drawing MS-001, Variation BA for additional information.
2. Dimensions A and L are measured with the package seated in JEDEC seating plane Gauge GS-3.
3. D, D1 and E1 dimensions do not include mold Flash or protrusions. Mold Flash or protrusions shall not exceed 0.010 inch.
4. E and eA measured with the leads constrained to be perpendicular to datum.
5. Pointed or rounded lead tips are preferred to ease insertion.
6. b2 and b3 maximum dimensions do not include Dambar protrusions. Dambar protrusions shall not exceed 0.010 (0.25 mm).
A 0.210 2
A2 0.115 0.130 0.195
b 0.014 0.018 0.022 5
b2 0.045 0.060 0.070 6
b3 0.030 0.039 0.045 6
c 0.008 0.010 0.014
D 0.355 0.365 0.400 3
D1 0.005 3
E 0.300 0.310 0.325 4
E1 0.240 0.250 0.280 3
e 0.100 BSC
eA 0.300 BSC 4
L 0.115 0.130 0.1
19
AT25080/160/320/640
0675M–SEEPR–9/03
8S1 – JEDEC SOIC
1150 E. Cheyenne Mtn. Blvd.
Colorado Springs, CO 80906
TITLE DRAWING NO.
R
REV.
Note:
10/7/03
8S1, 8-lead (0.150" Wide Body), Plastic Gull Wing
Small Outline (JEDEC SOIC) 8S1 B
COMMON DIMENSIONS
(Unit of Measure = mm)
SYMBOL MIN NOM MAX NOTE
A1 0.10 0.25
These drawings are for general information only. Refer to JEDEC Drawing MS-012, Variation AA for proper dimensions, tolerances, datums, etc.
A 1.35 1.75
b 0.31 0.51
C 0.17 0.25
D 4.80 5.00
E1 3.81 3.99
E 5.79 6.20
e 1.27 BSC
L 0.40 1.27
Top View
End View
Side View
eB
D
A
A1
N
E
1
C
E1
L
20 AT25080/160/320/640
0675M–SEEPR–9/03
14A2 – TSSOP
2325 Orchard Parkway
San Jose, CA 95131
TITLE DRAWING NO.
R
REV.
12/28/01
COMMON DIMENSIONS
(Unit of Measure = mm)
SYMBOL MIN NOM MAX NOTE
D 4.90 5.00 5.10 2, 5
E 6.40 BSC
E1 4.30 4.40 4.50 3, 5
A – 1.20
A2 0.80 1.00 1.05
b 0.19 0.30 4
e 0.65 BSC
L 0.45 0.60 0.75
L1 1.00 REF
L1
A
L
DA2
EE1
e
b
14A2,14-lead (4.4 x 5 mm Body), 0.65 Pitch,
Thin Shrink Small Outline Package (TSSOP)
Notes: 1. This drawing is for general information only. Please refer to JEDEC Drawing MO-153, Variation AB-1, for
additional information.
2. Dimension D does not include mold Flash, protrusions or gate burrs. Mold Flash, protrusions and gate
burrs shall not exceed 0.15 mm (0.006 in) per side.
3. Dimension E1 does not include inter-lead Flash or protrusions. Inter-lead Flash and protrusions shall not
exceed 0.25 mm (0.010 in) per side.
4. Dimension b does not include Dambar protrusion. Allowable Dambar protrusion shall be 0.08 mm total
in excess of the b dimension at maximum material condition. Dambar cannot be located on the lower
radius of the foot. Minimum space between protrusion and adjacent lead is 0.07 mm.
5. Dimension D and E1 to be determined at Datum Plane H.
14A2 A
Top View
Side View
End View
Printed on recycled paper.
0675M–SEEPR9/03 xM
Disclaimer: Atmel Corporation makes no warranty for the use of its products, other than those expressly contained in the Company’s standard
warranty which is detailed in Atmel’s Terms and Conditions located on the Company’s web site. The Company assumes no responsibility for any
errors which may appear in this document, reserves the right to change devices or specifications detailed herein at any time without notice, and
does not make any commitment to update the information contained herein. No licenses to patents or other intellectual property of Atmel are
granted by the Company in connection with the sale of Atmel products, expressly or by implication. Atmel’s products are not authorized for use
as critical components in life support devices or systems.
Atmel Corporation Atmel Operations
2325 Orchard Parkway
San Jose, CA 95131, USA
Tel: 1(408) 441-0311
Fax: 1(408) 487-2600
Regional Headquarters
Europe
Atmel Sarl
Route des Arsenaux 41
Case Postale 80
CH-1705 Fribourg
Switzerland
Tel: (41) 26-426-5555
Fax: (41) 26-426-5500
Asia
Room 1219
Chinachem Golden Plaza
77 Mody Road Tsimshatsui
East Kowloon
Hong Kong
Tel: (852) 2721-9778
Fax: (852) 2722-1369
Japan
9F, Tonetsu Shinkawa Bldg.
1-24-8 Shinkawa
Chuo-ku, Tokyo 104-0033
Japan
Tel: (81) 3-3523-3551
Fax: (81) 3-3523-7581
Memory
2325 Orchard Parkway
San Jose, CA 95131, USA
Tel: 1(408) 441-0311
Fax: 1(408) 436-4314
Microcontrollers
2325 Orchard Parkway
San Jose, CA 95131, USA
Tel: 1(408) 441-0311
Fax: 1(408) 436-4314
La Chantrerie
BP 70602
44306 Nantes Cedex 3, France
Tel: (33) 2-40-18-18-18
Fax: (33) 2-40-18-19-60
ASIC/ASSP/Smart Cards
Zone Industrielle
13106 Rousset Cedex, France
Tel: (33) 4-42-53-60-00
Fax: (33) 4-42-53-60-01
1150 East Cheyenne Mtn. Blvd.
Colorado Springs, CO 80906, USA
Tel: 1(719) 576-3300
Fax: 1(719) 540-1759
Scottish Enterprise Technology Park
Maxwell Building
East Kilbride G75 0QR, Scotland
Tel: (44) 1355-803-000
Fax: (44) 1355-242-743
RF/Automotive
Theresienstrasse 2
Postfach 3535
74025 Heilbronn, Germany
Tel: (49) 71-31-67-0
Fax: (49) 71-31-67-2340
1150 East Cheyenne Mtn. Blvd.
Colorado Springs, CO 80906, USA
Tel: 1(719) 576-3300
Fax: 1(719) 540-1759
Biometrics/Imaging/Hi-Rel MPU/
High Speed Converters/RF Datacom
Avenue de Rochepleine
BP 123
38521 Saint-Egreve Cedex, France
Tel: (33) 4-76-58-30-00
Fax: (33) 4-76-58-34-80
Literature Requests
www.atmel.com/literature
© Atmel Corporation 2003. All rights reserved. Atmel® and combinations thereof, are the registered trademarks of Atmel Corporation or its
subsidiaries. Other terms and product names may be the trademarks of others.