ON Semiconductor MJE350 Plastic Medium Power PNP Silicon Transistor . . . designed for use in line-operated applications such as low power, line-operated series pass and switching regulators requiring PNP capability. 0.5 AMPERE POWER TRANSISTOR PNP SILICON 300 VOLTS 20 WATTS * High Collector-Emitter Sustaining Voltage -- * * VCEO(sus) = 300 Vdc @ IC = 1.0 mAdc Excellent DC Current Gain -- hFE = 30-240 @ IC = 50 mAdc Plastic Thermopad Package IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII IIII IIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII IIII IIIIII III IIIIIIIIIIIII IIII IIIIII III IIIIIIIIIIIII IIII IIIIII III IIIIIIIIIIIII IIII IIIIII III IIIIIIIIIIIII IIII IIIIII III IIIIIIIIIIIII IIII IIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII IIII IIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII IIII IIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII IIII IIIIII III IIIIIIIIIIIII IIII IIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII IIIIII IIIII IIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII IIIIII IIIII IIII IIII IIIIIIIIIIIIIIIIII IIIIII IIIII IIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII IIIIII IIIII IIII IIII IIIIIIIIIIIIIIIIII IIIIII IIIII IIII IIII IIIIIIIIIIIIIIIIII IIIIII IIIII IIII IIII IIIIIIIIIIIIIIIIII IIIIII IIIII IIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII IIIIII IIIII IIII IIII IIIIIIIIIIIIIIIIII IIIIII IIIII IIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII IIIIII IIIII IIII IIII IIIIIIIIIIIIIIIIII IIIIII IIIII IIII IIII STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. BASE 3 2 1 MAXIMUM RATINGS Rating Symbol Value Unit VCEO 300 Vdc VEB 3.0 Vdc Collector Current -- Continuous IC 500 mAdc Total Power Dissipation @ TC = 25C Derate above 25C PD 20 0.16 Watts W/C TJ, Tstg -65 to +150 C Symbol Max Unit JC 6.25 C/W Collector-Emitter Voltage Emitter-Base Voltage Operating and Storage Junction Temperature Range CASE 77-09 TO-225AA TYPE THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Max Unit VCEO(sus) 300 -- Vdc Collector Cutoff Current (VCB = 300 Vdc, IE = 0) ICBO -- 100 Adc Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) IEBO -- 100 Adc hFE 30 240 -- OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (IC = 1.0 mAdc, IB = 0) ON CHARACTERISTICS DC Current Gain (IC = 50 mAdc, VCE = 10 Vdc) Semiconductor Components Industries, LLC, 2002 April, 2002 - Rev. 12 1 Publication Order Number: MJE350/D MJE350 hFE , DC CURRENT GAIN 100 1.0 TJ = 150C TJ = 25C 0.8 25C V, VOLTAGE (VOLTS) 200 70 50 -55C 30 20 VCE = 2.0 V VCC = 10 V 10 5.0 7.0 10 VBE(sat) @ IC/IB = 10 0.6 VBE @ VCE = 10 V 0.4 IC/IB = 10 0.2 VCE(sat) 200 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) 300 0 500 5.0 7.0 10 IC, COLLECTOR CURRENT (mA) 1000 700 500 300 100s dc 200 100 70 50 30 20 10 20 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) 200 300 500 Figure 2. "On" Voltages 1.0ms 500s TJ = 150C BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25C SECOND BREAKDOWN LIMITED V, TEMPERATURE COEFFICIENTS (mV/C) Figure 1. DC Current Gain IC/IB = 5.0 50 100 200 30 70 300 400 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) +1.2 +0.8 *APPLIES FOR IC/IB < hFE/4 +0.4 0 *VC for VCE(sat) -0.4 -0.8 +100C to +150C +25C to +100C -55C to +25C +25C to +150C -1.2 -1.6 VB for VBE -2.0 -55C to +25C -2.4 -2.8 5.0 7.0 Figure 3. Active-Region Safe Operating Area 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) 200 300 500 Figure 4. Temperature Coefficients 20 PD, POWER DISSIPATION (WATTS) There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 3 is based on T J(pk) = 150C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) 150C. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 16 12 8.0 4.0 0 0 20 40 60 80 100 120 TC, CASE TEMPERATURE (C) Figure 5. Power Derating http://onsemi.com 2 140 160 MJE350 PACKAGE DIMENSIONS TO-225 CASE 77-09 ISSUE W -B- U F Q -A- NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. C M 1 2 3 H K J V G S R 0.25 (0.010) A M M B M D 2 PL 0.25 (0.010) M A M B M STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. BASE http://onsemi.com 3 DIM A B C D F G H J K M Q R S U V INCHES MIN MAX 0.425 0.435 0.295 0.305 0.095 0.105 0.020 0.026 0.115 0.130 0.094 BSC 0.050 0.095 0.015 0.025 0.575 0.655 5 TYP 0.148 0.158 0.045 0.065 0.025 0.035 0.145 0.155 0.040 --- MILLIMETERS MIN MAX 10.80 11.04 7.50 7.74 2.42 2.66 0.51 0.66 2.93 3.30 2.39 BSC 1.27 2.41 0.39 0.63 14.61 16.63 5 TYP 3.76 4.01 1.15 1.65 0.64 0.88 3.69 3.93 1.02 --- MJE350 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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