Plastic Medium Power PNP
Silicon Transistor
. . . designed for use in line–operated applications such as low
power, line–operated series pass and switching regulators requiring
PNP capability.
•High Collector–Emitter Sustaining Voltage —
VCEO(sus) = 300 Vdc @ IC
= 1.0 mAdc
•Excellent DC Current Gain —
hFE = 30–240 @ IC
= 50 mAdc
•Plastic Thermopad Package
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
MAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Rating
ÎÎÎÎ
ÎÎÎÎ
Symbol
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
Value
ÎÎÎ
ÎÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Emitter Voltage
ÎÎÎÎ
ÎÎÎÎ
VCEO
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
300
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter–Base Voltage
ÎÎÎÎ
ÎÎÎÎ
VEB
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
3.0
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Current — Continuous
ÎÎÎÎ
ÎÎÎÎ
IC
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
500
ÎÎÎ
ÎÎÎ
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Total Power Dissipation @ TC = 25C
Derate above 25C
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
PD
ÎÎÎÎÎÎ
Î
ÎÎÎÎ
Î
ÎÎÎÎÎÎ
20
0.16
ÎÎÎ
Î
Î
Î
ÎÎÎ
Watts
W/C
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Operating and Storage Junction Temperature
Range
ÎÎÎÎ
ÎÎÎÎ
TJ, Tstg
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
–65 to +150
ÎÎÎ
ÎÎÎ
C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
THERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic
ÎÎÎÎ
ÎÎÎÎ
Symbol
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
Max
ÎÎÎ
ÎÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Thermal Resistance, Junction to Case
ÎÎÎÎ
ÎÎÎÎ
θJC
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
6.25
ÎÎÎ
ÎÎÎ
C/W
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
Symbol
ÎÎÎÎÎ
ÎÎÎÎÎ
Min
ÎÎÎÎ
ÎÎÎÎ
Max
ÎÎÎÎ
ÎÎÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
OFF CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Emitter Sustaining Voltage
(IC = 1.0 mAdc, IB = 0)
ÎÎÎÎÎÎ
Î
ÎÎÎÎ
Î
ÎÎÎÎÎÎ
VCEO(sus)
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
300
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
—
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current
(VCB = 300 Vdc, IE = 0)
ÎÎÎÎÎÎ
Î
ÎÎÎÎ
Î
ÎÎÎÎÎÎ
ICBO
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
—
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
100
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
µAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter Cutoff Current
(VEB = 3.0 Vdc, IC = 0)
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
IEBO
ÎÎÎÎÎ
ÎÎÎÎÎ
—
ÎÎÎÎ
ÎÎÎÎ
100
ÎÎÎÎ
ÎÎÎÎ
µAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ON CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DC Current Gain
(IC = 50 mAdc, VCE = 10 Vdc)
ÎÎÎÎÎÎ
Î
ÎÎÎÎ
Î
ÎÎÎÎÎÎ
hFE
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
30
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
240
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
—
ON Semiconductor
Semiconductor Components Industries, LLC, 2002
April, 2002 – Rev. 12 1Publication Order Number:
MJE350/D
MJE350
0.5 AMPERE
POWER TRANSISTOR
PNP SILICON
300 VOLTS
20 WATTS
CASE 77–09
TO–225AA TYPE
321
STYLE 1:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
MJE350
http://onsemi.com
2
V, TEMPERATURE COEFFICIENTS (mV/ C)°θ
IC, COLLECTOR CURRENT (mA)
hFE, DC CURRENT GAIN
200
7.0 205.0
50
30
10
10 50 10030
25°C
TJ = 150°C
-55°C
Figure 1. DC Current Gain
100
20
70
200 50030070
VCE = 2.0 V
VCC = 10 V
Figure 2. “On” Voltages
1.0
IC, COLLECTOR CURRENT (mA)
0.8
0.2
0
TJ = 25°C
V, VOLTAGE (VOLTS)
VBE(sat) @ IC/IB = 10
VBE @ VCE = 10 V0.6
0.4
VCE(sat)
7.0 205.0 10 50 10030 200 50030070
IC/IB = 10
IC/IB = 5.0
1000
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
70
300
10
50
BONDING WIRE LIMITED
THERMALLY LIMITED @ TC = 25°C
SECOND BREAKDOWN LIMITED
Figure 3. Active–Region Safe Operating Area
1.0ms
dc
700
2001005020
TJ = 150°C
IC, COLLECTOR CURRENT (mA)
100
300
500
30
100µs
40030 70
200
20
500µs
+1.2
IC, COLLECTOR CURRENT (mA)
70
Figure 4. Temperature Coefficients
5030105.0 5007.0 20
+0.8
+0.4
0
-0.4
-0.8
-1.2
-1.6
-2.0
-2.4
-2.8 100 200 300
*APPLIES FOR IC/IB < hFE/4
*θVC for VCE(sat)
θVB for VBE
+100°C to +150°C
+25°C to +100°C
-55°C to +25°C
+25°C to +150°C
-55°C to +25°C
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC – VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 3 is based on TJ(pk) = 150C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
150C. At high case temperatures, thermal limitations
will reduce the power that can be handled to values less than
the limitations imposed by second breakdown.
20
TC, CASE TEMPERATURE (°C)
Figure 5. Power Derating
10080400 16020 60
16
12
8.0
4.0
0120 140
PD, POWER DISSIPATION (WATTS)
MJE350
http://onsemi.com
3
PACKAGE DIMENSIONS
CASE 77–09
ISSUE W
TO–225
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
–B–
–A– M
K
FC
Q
H
V
G
S
D
JR
U
132
2 PL
M
A
M
0.25 (0.010) B M
M
A
M
0.25 (0.010) B M
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.425 0.435 10.80 11.04
B0.295 0.305 7.50 7.74
C0.095 0.105 2.42 2.66
D0.020 0.026 0.51 0.66
F0.115 0.130 2.93 3.30
G0.094 BSC 2.39 BSC
H0.050 0.095 1.27 2.41
J0.015 0.025 0.39 0.63
K0.575 0.655 14.61 16.63
M5 TYP 5 TYP
Q0.148 0.158 3.76 4.01
R0.045 0.065 1.15 1.65
S0.025 0.035 0.64 0.88
U0.145 0.155 3.69 3.93
V0.040 --- 1.02 ---
STYLE 1:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
MJE350
http://onsemi.com
4
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changes without further notice to any products herein. SCILLC makes no warranty , representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
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