MS2176
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DESCRIPTION:
The MS2176 is a gold metallized silicon NPN pulse power transistor
designed for applications requiring high peak power and low duty
cycles within the frequency range of 400 – 500 MHz.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol Parameter Value Unit
VCBO Collector-Base Voltage 65 V
VCES Collector-Emitter Voltage 65 V
VEBO Emitter-Base Voltage 3.5 V
IC Device Current 21.6 A
PDISS Power Dissipation 875 W
TJ Junction Temperature +200 °°C
TSTG Storage Temperature -65 to +150 °°C
Thermal Data
RTH(j-c) Junction-Case Thermal Resistance 0.2 °°C/W
FeaturesFeatures
• 350 WATTS @ 10µSEC PULSE WIDTH, 10% DUTY
CYCLE
• 300 WATTS @ 250µSEC PULSE WIDTH 10% DUTY
CYCLE
• 9.5 DB MIN. GAIN
• REFRACTORY GOLD METALLIZATION
• EMITTER BALLASTING AND LOW THERMAL
RESISTANCE FOR RELIABILITY AND RUGGEDNESS
• INFINITE VSWR CAPABILITY AT SPECIFIED
OPERATING CONDITIONS
RF AND MICROWAVE TRANSISTORS
UHF PULSED APPLICATIONS
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855